JP2005534510A - 低温プラズマによるＭＥＭＳ用途向けシリコン（Ｓｉ）又はシリコンゲルマニウム（ＳｉＧｅ） - Google Patents

低温プラズマによるＭＥＭＳ用途向けシリコン（Ｓｉ）又はシリコンゲルマニウム（ＳｉＧｅ） Download PDF

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Publication number
JP2005534510A
JP2005534510A JP2004525975A JP2004525975A JP2005534510A JP 2005534510 A JP2005534510 A JP 2005534510A JP 2004525975 A JP2004525975 A JP 2004525975A JP 2004525975 A JP2004525975 A JP 2004525975A JP 2005534510 A JP2005534510 A JP 2005534510A
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JP
Japan
Prior art keywords
silicon
layer
mems
temperature less
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
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JP2004525975A
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English (en)
Japanese (ja)
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JP2005534510A5 (enExample
Inventor
エイ． フォーストナー、ジュエルゲン
エム． スミス、スティーブン
マービン ループ、レイモンド
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NXP USA Inc
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NXP USA Inc
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Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2005534510A publication Critical patent/JP2005534510A/ja
Publication of JP2005534510A5 publication Critical patent/JP2005534510A5/ja
Withdrawn legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • H01G5/18—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/018—Switches not provided for in B81B2201/014 - B81B2201/016
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0161—Controlling physical properties of the material
    • B81C2201/0163—Controlling internal stress of deposited layers
    • B81C2201/0164—Controlling internal stress of deposited layers by doping the layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0735—Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)
  • Chemical Vapour Deposition (AREA)
JP2004525975A 2002-08-01 2003-05-13 低温プラズマによるＭＥＭＳ用途向けシリコン（Ｓｉ）又はシリコンゲルマニウム（ＳｉＧｅ） Withdrawn JP2005534510A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/210,315 US6770569B2 (en) 2002-08-01 2002-08-01 Low temperature plasma Si or SiGe for MEMS applications
PCT/US2003/014930 WO2004013039A2 (en) 2002-08-01 2003-05-13 Low temperature plasma si or sige for mems applications

Publications (2)

Publication Number Publication Date
JP2005534510A true JP2005534510A (ja) 2005-11-17
JP2005534510A5 JP2005534510A5 (enExample) 2006-07-13

Family

ID=31187279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004525975A Withdrawn JP2005534510A (ja) 2002-08-01 2003-05-13 低温プラズマによるＭＥＭＳ用途向けシリコン（Ｓｉ）又はシリコンゲルマニウム（ＳｉＧｅ）

Country Status (6)

Country Link
US (1) US6770569B2 (enExample)
JP (1) JP2005534510A (enExample)
KR (1) KR20050026078A (enExample)
CN (1) CN1675126A (enExample)
AU (1) AU2003229041A1 (enExample)
WO (1) WO2004013039A2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7692195B2 (en) 2007-11-09 2010-04-06 Seiko Epson Corporation Active-matrix device, electro-optical display device, and electronic apparatus
WO2013046283A1 (ja) * 2011-09-30 2013-04-04 富士通株式会社 可動部を有する電気機器とその製造方法
WO2013076755A1 (ja) * 2011-11-22 2013-05-30 パイオニア株式会社 静電アクチュエーター、可変容量コンデンサーおよび電気スイッチ
US9158107B2 (en) 2011-10-21 2015-10-13 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor device

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EP0867701A1 (en) * 1997-03-28 1998-09-30 Interuniversitair Microelektronica Centrum Vzw Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer
US7071017B2 (en) * 2003-08-01 2006-07-04 Yamaha Corporation Micro structure with interlock configuration
US7442570B2 (en) 2005-03-18 2008-10-28 Invensence Inc. Method of fabrication of a AL/GE bonding in a wafer packaging environment and a product produced therefrom
US7288464B2 (en) * 2005-04-11 2007-10-30 Hewlett-Packard Development Company, L.P. MEMS packaging structure and methods
US20060234412A1 (en) * 2005-04-19 2006-10-19 Hewlett-Packard Development Company, L.P. Intellectual Property Administration MEMS release methods
US7678601B2 (en) * 2006-01-20 2010-03-16 Texas Instruments Incorporated Method of forming an acceleration sensor
US7642114B2 (en) * 2006-07-19 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Micro electro mechanical device and manufacturing method thereof
DE102006061386B3 (de) * 2006-12-23 2008-06-19 Atmel Germany Gmbh Integrierte Anordnung, ihre Verwendung und Verfahren zu ihrer Herstellung
KR100959454B1 (ko) * 2007-12-10 2010-05-25 주식회사 동부하이텍 반도체 소자 및 그 제조 방법
US8071411B2 (en) * 2007-12-21 2011-12-06 The Royal Institution For The Advancement Of Learning/Mcgill University Low temperature ceramic microelectromechanical structures
WO2009111874A1 (en) * 2008-03-11 2009-09-17 The Royal Institution For The Advancement Of Learning/ Mcgiil University Low-temperature wafer level processing for mems devices
US8658452B2 (en) * 2008-07-09 2014-02-25 The Royal Institution For The Advancement Of Learning / Mcgill University Low temperature ceramic microelectromechanical structures
CN101393321B (zh) * 2008-10-09 2010-06-02 重庆大学 光栅光调制器与有源矩阵驱动电路单片集成方法
FR2953819A1 (fr) * 2009-12-15 2011-06-17 Commissariat Energie Atomique Procede de fabrication d'un composant electronique associant un systeme electromecanique et un circuit electronique.
CN102336388B (zh) * 2010-07-22 2014-04-16 上海华虹宏力半导体制造有限公司 压敏传感器的制备方法
US8567246B2 (en) 2010-10-12 2013-10-29 Invensense, Inc. Integrated MEMS device and method of use
US8860409B2 (en) 2011-01-11 2014-10-14 Invensense, Inc. Micromachined resonant magnetic field sensors
US8947081B2 (en) 2011-01-11 2015-02-03 Invensense, Inc. Micromachined resonant magnetic field sensors
US9664750B2 (en) 2011-01-11 2017-05-30 Invensense, Inc. In-plane sensing Lorentz force magnetometer
US8686555B2 (en) 2011-06-29 2014-04-01 Invensense, Inc. Integrated heater on MEMS cap for wafer scale packaged MEMS sensors
CN102515089B (zh) * 2011-12-21 2014-10-15 北京大学 一种mems集成化方法
CN102616731B (zh) * 2012-03-27 2016-02-03 上海华虹宏力半导体制造有限公司 Mems器件的制造方法
KR101471190B1 (ko) * 2012-12-31 2014-12-11 한국과학기술원 멤즈 구조체의 제조 방법
CN104501983B (zh) * 2015-01-08 2017-03-22 上海新微技术研发中心有限公司 一种褶皱膜温度传感器及其制作方法
US9754922B2 (en) 2015-02-11 2017-09-05 Invensense, Inc. 3D integration using Al—Ge eutectic bond interconnect
US10192850B1 (en) 2016-09-19 2019-01-29 Sitime Corporation Bonding process with inhibited oxide formation
CN108584864B (zh) * 2018-04-16 2019-08-09 大连理工大学 一种基于聚酰亚胺的柔性静电驱动mems继电器的制造方法
US11314210B2 (en) * 2018-08-01 2022-04-26 Nutech Ventures Neuromorphic computing using electrostatic mems devices
CN110504435B (zh) * 2019-08-30 2021-06-04 石家庄尚太科技股份有限公司 一种低温等离子体制备硅碳复合负极材料的方法
CN110713169B (zh) * 2019-10-21 2023-02-14 中北大学 一种提高射频mems开关中聚酰亚胺牺牲层平整度的方法

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WO1994018697A1 (en) * 1993-02-04 1994-08-18 Cornell Research Foundation, Inc. Microstructures and single mask, single-crystal process for fabrication thereof
US5616514A (en) * 1993-06-03 1997-04-01 Robert Bosch Gmbh Method of fabricating a micromechanical sensor
WO1996016203A1 (de) 1994-11-22 1996-05-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur herstellung mikromechanischer bauelemente mit freistehenden mikrostrukturen oder membranen
US5578976A (en) * 1995-06-22 1996-11-26 Rockwell International Corporation Micro electromechanical RF switch
FR2736654B1 (fr) * 1995-07-13 1997-08-22 Commissariat Energie Atomique Procede de fabrication d'elements de microstructures flottants rigides et dispositif equipe de tels elements
WO2000042231A2 (en) * 1999-01-15 2000-07-20 The Regents Of The University Of California Polycrystalline silicon germanium films for forming micro-electromechanical systems
US6069540A (en) * 1999-04-23 2000-05-30 Trw Inc. Micro-electro system (MEMS) switch
ATE440378T1 (de) * 2000-04-05 2009-09-15 Imec Verfahren zum abscheiden eines zur mikrobearbeitung geeigneten polykristallinen sige
US6635506B2 (en) * 2001-11-07 2003-10-21 International Business Machines Corporation Method of fabricating micro-electromechanical switches on CMOS compatible substrates
US6701779B2 (en) * 2002-03-21 2004-03-09 International Business Machines Corporation Perpendicular torsion micro-electromechanical switch

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7692195B2 (en) 2007-11-09 2010-04-06 Seiko Epson Corporation Active-matrix device, electro-optical display device, and electronic apparatus
US8013849B2 (en) 2007-11-09 2011-09-06 Seiko Epson Corporation Active-matrix device, electro-optical display device, and electronic apparatus
WO2013046283A1 (ja) * 2011-09-30 2013-04-04 富士通株式会社 可動部を有する電気機器とその製造方法
US9767966B2 (en) 2011-09-30 2017-09-19 Fujitsu Limited Electric equipment having movable portion, and its manufacture
US9158107B2 (en) 2011-10-21 2015-10-13 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor device
WO2013076755A1 (ja) * 2011-11-22 2013-05-30 パイオニア株式会社 静電アクチュエーター、可変容量コンデンサーおよび電気スイッチ

Also Published As

Publication number Publication date
KR20050026078A (ko) 2005-03-14
US6770569B2 (en) 2004-08-03
WO2004013039A2 (en) 2004-02-12
AU2003229041A1 (en) 2004-02-23
US20040023429A1 (en) 2004-02-05
CN1675126A (zh) 2005-09-28
WO2004013039A3 (en) 2004-12-16

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