JP2008100347A5 - - Google Patents

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Publication number
JP2008100347A5
JP2008100347A5 JP2007273048A JP2007273048A JP2008100347A5 JP 2008100347 A5 JP2008100347 A5 JP 2008100347A5 JP 2007273048 A JP2007273048 A JP 2007273048A JP 2007273048 A JP2007273048 A JP 2007273048A JP 2008100347 A5 JP2008100347 A5 JP 2008100347A5
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JP
Japan
Prior art keywords
region
substrate
circuit
micromechanical
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007273048A
Other languages
English (en)
Japanese (ja)
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JP2008100347A (ja
JP5812558B2 (ja
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Publication date
Priority claimed from DE102006052630A external-priority patent/DE102006052630A1/de
Application filed filed Critical
Publication of JP2008100347A publication Critical patent/JP2008100347A/ja
Publication of JP2008100347A5 publication Critical patent/JP2008100347A5/ja
Application granted granted Critical
Publication of JP5812558B2 publication Critical patent/JP5812558B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2007273048A 2006-10-19 2007-10-19 モノリシック集積回路を有するマイクロメカニカルエレメント、ならびにエレメントの製造方法 Expired - Fee Related JP5812558B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102006049256 2006-10-19
DE102006049256.0 2006-10-19
DE102006052630.9 2006-11-08
DE102006052630A DE102006052630A1 (de) 2006-10-19 2006-11-08 Mikromechanisches Bauelement mit monolithisch integrierter Schaltung und Verfahren zur Herstellung eines Bauelements

Publications (3)

Publication Number Publication Date
JP2008100347A JP2008100347A (ja) 2008-05-01
JP2008100347A5 true JP2008100347A5 (enExample) 2010-12-02
JP5812558B2 JP5812558B2 (ja) 2015-11-17

Family

ID=39198515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007273048A Expired - Fee Related JP5812558B2 (ja) 2006-10-19 2007-10-19 モノリシック集積回路を有するマイクロメカニカルエレメント、ならびにエレメントの製造方法

Country Status (4)

Country Link
US (1) US20080093690A1 (enExample)
JP (1) JP5812558B2 (enExample)
DE (1) DE102006052630A1 (enExample)
IT (1) ITMI20071995A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7943525B2 (en) * 2008-12-19 2011-05-17 Freescale Semiconductor, Inc. Method of producing microelectromechanical device with isolated microstructures
JP6361505B2 (ja) * 2013-07-04 2018-07-25 東レ株式会社 不純物拡散組成物および半導体素子の製造方法
US11145752B2 (en) 2019-09-17 2021-10-12 Taiwan Semiconductor Manufacturing Company, Ltd. Residue removal in metal gate cutting process

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5220189A (en) * 1983-07-06 1993-06-15 Honeywell Inc. Micromechanical thermoelectric sensor element
US5235187A (en) * 1991-05-14 1993-08-10 Cornell Research Foundation Methods of fabricating integrated, aligned tunneling tip pairs
DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
ATE269588T1 (de) * 1993-02-04 2004-07-15 Cornell Res Foundation Inc Mikrostrukturen und einzelmask, einkristall- herstellungsverfahren
DE4418207C1 (de) * 1994-05-25 1995-06-22 Siemens Ag Thermischer Sensor/Aktuator in Halbleitermaterial
JP3761918B2 (ja) * 1994-09-13 2006-03-29 株式会社東芝 半導体装置の製造方法
US6316796B1 (en) * 1995-05-24 2001-11-13 Lucas Novasensor Single crystal silicon sensor with high aspect ratio and curvilinear structures
DE19706682C2 (de) * 1997-02-20 1999-01-14 Bosch Gmbh Robert Anisotropes fluorbasiertes Plasmaätzverfahren für Silizium
WO2004090556A1 (ja) * 1997-11-11 2004-10-21 Makoto Ishida シリコン集積化加速度センサ
US6239473B1 (en) * 1998-01-15 2001-05-29 Kionix, Inc. Trench isolation for micromechanical devices
US6020272A (en) * 1998-10-08 2000-02-01 Sandia Corporation Method for forming suspended micromechanical structures
DE10006035A1 (de) * 2000-02-10 2001-08-16 Bosch Gmbh Robert Verfahren zur Herstellung eines mikromechanischen Bauelements sowie ein nach dem Verfahren hergestelltes Bauelement
FI113704B (fi) * 2001-03-21 2004-05-31 Vti Technologies Oy Menetelmä piianturin valmistamiseksi sekä piianturi
US6657259B2 (en) * 2001-12-04 2003-12-02 International Business Machines Corporation Multiple-plane FinFET CMOS
US6762116B1 (en) * 2002-06-12 2004-07-13 Zyvex Corporation System and method for fabricating microcomponent parts on a substrate having pre-fabricated electronic circuitry thereon
JP2005039652A (ja) * 2003-07-17 2005-02-10 Hosiden Corp 音響検出機構
DE102004043356A1 (de) * 2004-09-08 2006-03-09 Robert Bosch Gmbh Sensorelement mit getrenchter Kaverne
DE102004061796A1 (de) * 2004-12-22 2006-07-13 Robert Bosch Gmbh Mikromechanisches kapazitives Sensorelement
DE102005004877A1 (de) * 2005-02-03 2006-08-10 Robert Bosch Gmbh Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
JP4724488B2 (ja) * 2005-02-25 2011-07-13 日立オートモティブシステムズ株式会社 集積化マイクロエレクトロメカニカルシステム
DE102006022378A1 (de) * 2006-05-12 2007-11-22 Robert Bosch Gmbh Verfahren zur Herstellung eines mikromechanischen Bauelements und mikromechanisches Bauelement

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