JP2012129200A - 半導体膜、及び半導体膜の作製方法、並びに蓄電装置 - Google Patents
半導体膜、及び半導体膜の作製方法、並びに蓄電装置 Download PDFInfo
- Publication number
- JP2012129200A JP2012129200A JP2011253924A JP2011253924A JP2012129200A JP 2012129200 A JP2012129200 A JP 2012129200A JP 2011253924 A JP2011253924 A JP 2011253924A JP 2011253924 A JP2011253924 A JP 2011253924A JP 2012129200 A JP2012129200 A JP 2012129200A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- silicide
- layer
- semiconductor film
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 83
- 238000000034 method Methods 0.000 title claims abstract description 54
- 238000003860 storage Methods 0.000 title claims abstract description 54
- 230000005611 electricity Effects 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 270
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 263
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 263
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 206
- 239000010703 silicon Substances 0.000 claims abstract description 206
- 229910052751 metal Inorganic materials 0.000 claims abstract description 109
- 239000002184 metal Substances 0.000 claims abstract description 109
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 claims description 29
- 239000010936 titanium Substances 0.000 claims description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 18
- 229910052719 titanium Inorganic materials 0.000 claims description 18
- 238000002360 preparation method Methods 0.000 abstract 1
- 239000000523 sample Substances 0.000 description 24
- 239000007789 gas Substances 0.000 description 18
- 239000011149 active material Substances 0.000 description 15
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 13
- 229910001416 lithium ion Inorganic materials 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 239000003792 electrolyte Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 8
- 239000007773 negative electrode material Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000007774 positive electrode material Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical group [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 229910052744 lithium Inorganic materials 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000001350 scanning transmission electron microscopy Methods 0.000 description 5
- 229910021341 titanium silicide Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- -1 etc.) Chemical compound 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 210000000352 storage cell Anatomy 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000004626 scanning electron microscopy Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910012851 LiCoO 2 Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 2
- 229910001413 alkali metal ion Inorganic materials 0.000 description 2
- 229910001420 alkaline earth metal ion Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002003 electron diffraction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002642 lithium compounds Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 229920003026 Acene Polymers 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 description 1
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910018119 Li 3 PO 4 Inorganic materials 0.000 description 1
- 229910015015 LiAsF 6 Inorganic materials 0.000 description 1
- 229910013063 LiBF 4 Inorganic materials 0.000 description 1
- 229910013684 LiClO 4 Inorganic materials 0.000 description 1
- 229910011281 LiCoPO 4 Inorganic materials 0.000 description 1
- 229910010586 LiFeO 2 Inorganic materials 0.000 description 1
- 229910010707 LiFePO 4 Inorganic materials 0.000 description 1
- 229910015645 LiMn Inorganic materials 0.000 description 1
- 229910015643 LiMn 2 O 4 Inorganic materials 0.000 description 1
- 229910013290 LiNiO 2 Inorganic materials 0.000 description 1
- 229910013086 LiNiPO Inorganic materials 0.000 description 1
- 229910013870 LiPF 6 Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 159000000009 barium salts Chemical class 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 159000000004 beryllium salts Chemical class 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 159000000007 calcium salts Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002524 electron diffraction data Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910003002 lithium salt Inorganic materials 0.000 description 1
- 159000000002 lithium salts Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 159000000003 magnesium salts Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052990 silicon hydride Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 159000000008 strontium salts Chemical class 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
- H01M4/0402—Methods of deposition of the material
- H01M4/0421—Methods of deposition of the material involving vapour deposition
- H01M4/0428—Chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
- H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/134—Electrodes based on metals, Si or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/362—Composites
- H01M4/366—Composites as layered products
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/386—Silicon or alloys based on silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Composite Materials (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】金属からなる一表面を有する基板上にシリコン構造物を含むシリコン層を有する半導体膜の作製方法を適用する。金属とシリコンとが反応して形成されるシリサイド層の厚さを制御することにより、シリサイド層とシリコン層との界面に形成されるシリサイド粒の粒径を制御し、シリコン構造物の形状を制御すればよい。また、このような半導体膜を蓄電装置の電極に適用すればよい。
【選択図】図1
Description
また、本発明の目的は、密度が制御されたシリコンの微小構造物を有する半導体膜、及びその作製方法を提供することを課題の一とする。
また、本発明の目的は、充放電容量が向上した蓄電装置を提供することを課題の一とする。
本実施の形態では、本発明の一態様であるシリコン構造物を有する半導体膜と、その作製方法について図1乃至図4を用いて説明する。
図1(A)は、本実施の形態で例示する、針状のシリコンウィスカを有する半導体膜の断面概略図である。
次に、針状のシリコンウィスカを有する半導体膜の作製方法について、図2を用いて説明する。
次に、上記とは異なる構成の、針状のシリコンウィスカを有する半導体膜とその作製方法について、図3を用いて説明する。
上記で示した針状のシリコンウィスカの作製方法に対し、シリコンと反応して形成されるシリサイド層の膜厚が100nm以上の厚膜となるよう形成し、シリサイド粒の粒径を50nm以上とすることにより、針状のシリコンウィスカとは異なる形状のシリコン微小構造物を作製することが出来る。
実施の形態1で示したように、本発明の一態様の、針状のシリコンウィスカを有する半導体膜の作製方法を用いると極めて高密度に針状のシリコンウィスカを形成することができる。しかし、このような極めて高密度に形成された針状のシリコンウィスカを、蓄電装置の電極の活物質に用いると不具合が生じる場合がある。例えば、リチウムイオン蓄電装置の場合、充放電の際に活物質にリチウムイオンが取り込まれる際に、活物質は体積膨張を起こす。本発明の一態様である、極めて高密度に形成された針状のシリコンウィスカを活物質に用いると、この体積膨張によって針状のシリコンウィスカ同士が干渉、接触し、折れてしまう危険性が生じる。
したがって本実施の形態では、密度が制御された、針状のシリコンウィスカを有する半導体膜とその作製方法について説明する。
実施の形態1及び実施の形態2で説明したシリコン構造物は、蓄電装置の電極として用いることができる。少なくとも一対の電極、電解質およびセパレータを用いることで、二次電池または、キャパシタとすることができる。
実施の形態1及び実施の形態2で説明した針状のシリコンウィスカは、その形状を活かし、次のような用途にも用いることができる。例えば、測定機器に用いられている探針(プローブ)、電子銃、またはMEMS(Micro Electro Mechanical Systems)にも用いることができる。
103 シリサイド層
105 シリサイド粒
107 シリコン層
109 金属層
111 シリコンウィスカ
113 シリコンウィスカ
115 シリコンウィスカ
117 シリコンウィスカ
119 シリコンウィスカ
121 基板
123 シリサイド層
125 シリサイド粒
127 シリコン層
131 シリコンウィスカ
133 シリコンウィスカ
135 シリコンウィスカ
143 シリサイド層
145 シリサイド粒
147 シリコン層
149 金属層
151 シリコン構造物
152 シリコン構造物
153 シリコン構造物
154 シリコン構造物
163 シリサイド層
165 シリサイド粒
167 シリコン層
169 金属層
171 金属層
173 絶縁層
175 絶縁層
177 シリコンウィスカ
178 シリコンウィスカ
951 蓄電装置
953 外装部材
955 蓄電セル
957 端子部
959 端子部
963 負極
965 正極
967 セパレータ
969 電解質
971 負極集電体
973 負極活物質層
975 正極集電体
977 正極活物質層
1001 電動自転車
1002 サドル
1003 ペダル
1004 フレーム
1005 車輪
1006 ハンドル
1007 駆動部
1008 表示装置
1101 電気自動車
1103 モーター
1105 バッテリー
1107 電力制御部
Claims (9)
- 金属を含むシリサイド層と、
前記シリサイド層上にシリサイド粒と、
前記シリサイド層、及び前記シリサイド粒に接するシリコン層と、を有し、
前記シリコン層が針状のシリコン構造物を含み、
前記シリサイド層の膜厚は、1nm以上100nm未満であり、
前記シリサイド粒の粒径は、1nm以上50nm未満である、半導体膜。 - 金属を含むシリサイド層と、
前記シリサイド層上にシリサイド粒と、
前記シリサイド層、及び前記シリサイド粒に接するシリコン層と、を有し、
前記シリコン層がドーム状のシリコン構造物を含み、
前記シリサイド層の膜厚は、100nm以上であり、
前記シリサイド粒の粒径は、50nm以上である、半導体膜。 - 同一基板上に、
請求項1又は請求項2に記載の半導体膜を有する第1の領域と、
前記金属を含む金属層と、前記金属層上に絶縁層と、前記絶縁層上に第2のシリコン層とを有する第2の領域と、を有し、
前記第1の領域の有するシリコン層と、前記第2のシリコン層とは連続する、半導体膜。 - 請求項1乃至請求項3のいずれか一において、
前記シリサイド層及び前記シリサイド粒はチタンを含む、半導体膜。 - 金属膜の表面に、前記金属を含むシリサイド層を形成すると共に、前記シリサイド層の一部をシリサイド粒に変成し、
前記シリサイド層上にシリコン構造物を含むシリコン層を形成し、
前記シリサイド層の厚みにより、前記シリコン構造物の形状が制御される、半導体膜の作製方法。 - 金属膜の表面に、前記金属を含むシリサイド層を形成すると共に、前記シリサイド層の一部をシリサイド粒に変成し、
前記シリサイド層上に、針状のシリコン構造物を含むシリコン層を形成し、
前記シリサイド層の厚みは、1nm以上100nm未満とし、
前記シリサイド粒の粒径は、1nm以上50nm未満とする、半導体膜の作製方法。 - 金属膜の表面に、前記金属を含むシリサイド層を形成すると共に、前記シリサイド層の一部をシリサイド粒に変成し、
前記シリサイド層上に、ドーム状のシリコン構造物を含むシリコン層を形成し、
前記シリサイド層の厚みは、100nm以上とし、
前記シリサイド粒の粒径は、50nm以上とする、半導体膜の作製方法。 - 請求項5乃至請求項7のいずれか一において、
前記シリサイド層及び前記シリサイド粒はチタンを含む、半導体膜の作製方法。 - 請求項1乃至請求項4のいずれか一に記載の半導体膜を有する、蓄電装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011253924A JP5793066B2 (ja) | 2010-11-26 | 2011-11-21 | 蓄電装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010263710 | 2010-11-26 | ||
JP2010263710 | 2010-11-26 | ||
JP2011253924A JP5793066B2 (ja) | 2010-11-26 | 2011-11-21 | 蓄電装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012129200A true JP2012129200A (ja) | 2012-07-05 |
JP2012129200A5 JP2012129200A5 (ja) | 2014-11-13 |
JP5793066B2 JP5793066B2 (ja) | 2015-10-14 |
Family
ID=46126885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011253924A Expired - Fee Related JP5793066B2 (ja) | 2010-11-26 | 2011-11-21 | 蓄電装置 |
Country Status (3)
Country | Link |
---|---|
US (2) | US8455044B2 (ja) |
JP (1) | JP5793066B2 (ja) |
KR (1) | KR101899374B1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9543577B2 (en) | 2010-12-16 | 2017-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Active material, electrode including the active material and manufacturing method thereof, and secondary battery |
JP6025284B2 (ja) | 2011-08-19 | 2016-11-16 | 株式会社半導体エネルギー研究所 | 蓄電装置用の電極及び蓄電装置 |
WO2013027561A1 (en) | 2011-08-19 | 2013-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing graphene-coated object, negative electrode of secondary battery including graphene-coated object, and secondary battery including the negative electrode |
KR20130024769A (ko) | 2011-08-30 | 2013-03-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 축전 장치 |
JP6034621B2 (ja) | 2011-09-02 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 蓄電装置の電極および蓄電装置 |
JP6050106B2 (ja) | 2011-12-21 | 2016-12-21 | 株式会社半導体エネルギー研究所 | 非水二次電池用シリコン負極の製造方法 |
WO2014171337A1 (en) | 2013-04-19 | 2014-10-23 | Semiconductor Energy Laboratory Co., Ltd. | Secondary battery and a method for fabricating the same |
US11626288B2 (en) | 2021-07-30 | 2023-04-11 | Applied Materials, Inc. | Integrated contact silicide with tunable work functions |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5643826A (en) * | 1993-10-29 | 1997-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
US5705829A (en) * | 1993-12-22 | 1998-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device formed using a catalyst element capable of promoting crystallization |
US20100285358A1 (en) * | 2009-05-07 | 2010-11-11 | Amprius, Inc. | Electrode Including Nanostructures for Rechargeable Cells |
JP2010262752A (ja) * | 2009-04-30 | 2010-11-18 | Furukawa Electric Co Ltd:The | リチウムイオン二次電池用の負極、それを用いたリチウムイオン二次電池、リチウムイオン二次電池用の負極の製造方法 |
US20110159365A1 (en) * | 2009-05-07 | 2011-06-30 | Amprius, Inc. | Template electrode structures for depositing active materials |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3431033B2 (ja) | 1993-10-29 | 2003-07-28 | 株式会社半導体エネルギー研究所 | 半導体作製方法 |
JP3025814B2 (ja) | 1993-12-22 | 2000-03-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2762218B2 (ja) | 1993-12-22 | 1998-06-04 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
JP2762219B2 (ja) | 1993-12-22 | 1998-06-04 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
JP3032801B2 (ja) | 1997-03-03 | 2000-04-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TW379360B (en) | 1997-03-03 | 2000-01-11 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
US20020168574A1 (en) | 1997-06-27 | 2002-11-14 | Soon-Ho Ahn | Lithium ion secondary battery and manufacturing method of the same |
AU7951100A (en) | 1999-10-22 | 2001-04-30 | Sanyo Electric Co., Ltd. | Electrode for lithium secondary cell and lithium secondary cell |
JP3733067B2 (ja) | 1999-10-22 | 2006-01-11 | 三洋電機株式会社 | リチウム電池用電極及びリチウム二次電池 |
JP3733071B2 (ja) | 1999-10-22 | 2006-01-11 | 三洋電機株式会社 | リチウム電池用電極及びリチウム二次電池 |
JP3702224B2 (ja) | 1999-10-22 | 2005-10-05 | 三洋電機株式会社 | リチウム二次電池用電極の製造方法 |
EP1244163A4 (en) | 1999-10-22 | 2007-10-31 | Sanyo Electric Co | ELECTRODE FOR LITHIUM ACCUMULATOR AND LITHIUM ACCUMULATOR |
JP2002083594A (ja) | 1999-10-22 | 2002-03-22 | Sanyo Electric Co Ltd | リチウム電池用電極並びにこれを用いたリチウム電池及びリチウム二次電池 |
AU7951300A (en) | 1999-10-22 | 2001-04-30 | Sanyo Electric Co., Ltd. | Method for producing material for electrode for lithium cell |
JP2001210315A (ja) | 2000-01-25 | 2001-08-03 | Sanyo Electric Co Ltd | リチウム二次電池用電極及びこれを用いたリチウム二次電池 |
JP2003246700A (ja) | 2002-02-22 | 2003-09-02 | Japan Science & Technology Corp | シリコンナノニードルの製法 |
JP4140765B2 (ja) | 2002-09-19 | 2008-08-27 | コバレントマテリアル株式会社 | 針状シリコン結晶およびその製造方法 |
US7015496B2 (en) | 2002-12-27 | 2006-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Field emission device and manufacturing method thereof |
JP2004281317A (ja) | 2003-03-18 | 2004-10-07 | Matsushita Electric Ind Co Ltd | 非水電解質二次電池用電極材料とその製造方法、ならびにそれを用いた非水電解質二次電池 |
US20050042128A1 (en) | 2003-08-22 | 2005-02-24 | Keiko Matsubara | Negative active material for rechargeable lithium battery, method of preparing same and rechargeable lithium battery |
JP3746499B2 (ja) | 2003-08-22 | 2006-02-15 | 三星エスディアイ株式会社 | リチウム二次電池用負極活物質及びその製造方法並びにリチウム二次電池 |
KR100566592B1 (ko) * | 2004-09-16 | 2006-03-31 | 주식회사 디지털텍 | 리튬 이온 폴리머 전지용 음극 박막 및 그의 제조방법 |
JP2007299580A (ja) | 2006-04-28 | 2007-11-15 | Matsushita Electric Ind Co Ltd | 非水電解質角型二次電池 |
JP2008294314A (ja) | 2007-05-28 | 2008-12-04 | Sanyo Electric Co Ltd | キャパシタ |
KR100878718B1 (ko) * | 2007-08-28 | 2009-01-14 | 한국과학기술연구원 | 리튬이차전지용 실리콘 박막 음극, 이의 제조방법 및 이를포함하는 리튬이차전지 |
US8927156B2 (en) | 2009-02-19 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device |
US9061902B2 (en) | 2009-12-18 | 2015-06-23 | The Board Of Trustees Of The Leland Stanford Junior University | Crystalline-amorphous nanowires for battery electrodes |
-
2011
- 2011-11-14 KR KR1020110118154A patent/KR101899374B1/ko active IP Right Grant
- 2011-11-21 US US13/301,020 patent/US8455044B2/en active Active
- 2011-11-21 JP JP2011253924A patent/JP5793066B2/ja not_active Expired - Fee Related
-
2013
- 2013-06-03 US US13/908,047 patent/US8643182B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5643826A (en) * | 1993-10-29 | 1997-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
US5705829A (en) * | 1993-12-22 | 1998-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device formed using a catalyst element capable of promoting crystallization |
JP2010262752A (ja) * | 2009-04-30 | 2010-11-18 | Furukawa Electric Co Ltd:The | リチウムイオン二次電池用の負極、それを用いたリチウムイオン二次電池、リチウムイオン二次電池用の負極の製造方法 |
US20100285358A1 (en) * | 2009-05-07 | 2010-11-11 | Amprius, Inc. | Electrode Including Nanostructures for Rechargeable Cells |
US20110159365A1 (en) * | 2009-05-07 | 2011-06-30 | Amprius, Inc. | Template electrode structures for depositing active materials |
Also Published As
Publication number | Publication date |
---|---|
US20120135302A1 (en) | 2012-05-31 |
US20130270679A1 (en) | 2013-10-17 |
JP5793066B2 (ja) | 2015-10-14 |
US8455044B2 (en) | 2013-06-04 |
US8643182B2 (en) | 2014-02-04 |
KR20120059362A (ko) | 2012-06-08 |
KR101899374B1 (ko) | 2018-09-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5793066B2 (ja) | 蓄電装置 | |
JP5885940B2 (ja) | 蓄電装置の作製方法 | |
JP6208786B2 (ja) | 蓄電装置の作製方法 | |
JP6012145B2 (ja) | 蓄電装置の作製方法 | |
JP5706747B2 (ja) | 蓄電装置の負極 | |
JP6127122B2 (ja) | 蓄電装置 | |
JP6352726B2 (ja) | 負極活物質、負極活物質材料、負極電極、リチウムイオン二次電池、負極電極の製造方法、負極活物質の製造方法、並びに、リチウムイオン二次電池の製造方法 | |
JP6050106B2 (ja) | 非水二次電池用シリコン負極の製造方法 | |
KR102056328B1 (ko) | 리튬 이차 전지용 음극과 리튬 이차 전지, 및 그 제작 방법 | |
JP6134533B2 (ja) | 二次電池 | |
JP5789417B2 (ja) | 蓄電装置 | |
JP5806097B2 (ja) | 蓄電装置 | |
JP5932256B2 (ja) | 蓄電装置 | |
US9136530B2 (en) | Energy storage device and manufacturing method thereof | |
US8845764B2 (en) | Power storage device comprising solid electrolyte layer over active material and second electrolyte and method of manufacturing the same | |
JP2012033474A (ja) | 蓄電装置及びその作製方法 | |
JP2010049968A (ja) | 固体電解質二次電池 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140925 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140925 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150428 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150430 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150611 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150804 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150807 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5793066 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |