JP2012129199A - 有機光デバイス及び有機光デバイスの保護部材 - Google Patents
有機光デバイス及び有機光デバイスの保護部材 Download PDFInfo
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- JP2012129199A JP2012129199A JP2011253792A JP2011253792A JP2012129199A JP 2012129199 A JP2012129199 A JP 2012129199A JP 2011253792 A JP2011253792 A JP 2011253792A JP 2011253792 A JP2011253792 A JP 2011253792A JP 2012129199 A JP2012129199 A JP 2012129199A
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- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 150000003553 thiiranes Chemical class 0.000 description 1
- IUTCEZPPWBHGIX-UHFFFAOYSA-N tin(2+) Chemical compound [Sn+2] IUTCEZPPWBHGIX-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- QGJSAGBHFTXOTM-UHFFFAOYSA-K trifluoroerbium Chemical compound F[Er](F)F QGJSAGBHFTXOTM-UHFFFAOYSA-K 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- CJGUQZGGEUNPFQ-UHFFFAOYSA-L zinc;2-(1,3-benzothiazol-2-yl)phenolate Chemical compound [Zn+2].[O-]C1=CC=CC=C1C1=NC2=CC=CC=C2S1.[O-]C1=CC=CC=C1C1=NC2=CC=CC=C2S1 CJGUQZGGEUNPFQ-UHFFFAOYSA-L 0.000 description 1
- GWDUZCIBPDVBJM-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzothiazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1 GWDUZCIBPDVBJM-UHFFFAOYSA-L 0.000 description 1
- QEPMORHSGFRDLW-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzoxazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1 QEPMORHSGFRDLW-UHFFFAOYSA-L 0.000 description 1
- HTPBWAPZAJWXKY-UHFFFAOYSA-L zinc;quinolin-8-olate Chemical compound [Zn+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 HTPBWAPZAJWXKY-UHFFFAOYSA-L 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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Abstract
【解決手段】支持体と、支持体上に設けられた機能層と、機能層上に設けられた有機化合物を含む発光体とを有し、機能層は、ガリウム又はアルミニウムと、亜鉛と、酸素とを含む絶縁膜を有し、支持体及び機能層は、波長が400nm以上700nm以下の領域で透光性を有する有機光デバイスを提供する。ガリウム又はアルミニウムと、亜鉛と、酸素とを含む絶縁膜を保護膜として用いることで、有機化合物や金属材料への水分や不純物の侵入を抑制することができる。
【選択図】図1
Description
本実施の形態では、本発明の一態様の有機光デバイスについて図1を用いて説明する。
機能層201は、ガリウム(Ga)又はアルミニウム(Al)と、亜鉛(Zn)と、酸素(O)とを含む絶縁膜を有する。
支持体101は、例えばガラス、石英、又はプラスチックなどを用いることができる。また可撓性基板を用いてもよい。可撓性基板とは、折り曲げることができる(フレキシブル)基板のことであり、例えば、ポリカーボネート、ポリアリレート、ポリエーテルスルフォンからなるプラスチック基板等が挙げられる。また、フィルム(ポリプロピレン、ポリエステル、ビニル、ポリフッ化ビニル、ポリ塩化ビニルなどからなる)、無機蒸着フィルムを用いることもできる。
発光体301は、有機化合物を含む。発光体301には、LED(Light Emitting Diode)、有機EL素子、無機EL素子等の発光物を用いることができる。また、発光体301が含む有機化合物としては、前述の有機EL素子や、有機トランジスタ等に含まれる有機化合物が挙げられる。その他、発光体301は、シリコンや酸化物半導体を用いたトランジスタを含んでいても良い。
EL層102は、少なくとも発光性の有機化合物を含む層を有する。そのほか、電子輸送性の高い物質を含む層、正孔輸送性の高い物質を含む層、電子注入性の高い物質を含む層、正孔注入性の高い物質を含む層、バイポーラ性の物質(電子輸送性及び正孔輸送性が高い物質)を含む層等を適宜組み合わせた積層構造を構成することができる。EL層102の構成例は実施の形態4で詳細に説明する。
第1の電極103は、支持体101及び機能層201と同様に、EL層102の発光を取り出す側に設けられている。第1の電極103は波長が450nm以上650nm以下の領域で透光性を有する。好ましくは、波長が400nm以上700nm以下の領域で透光性を有する。
第2の電極108は、光を取り出す側と反対側に設けられ、反射性を有する材料を用いて形成される。反射性を有する材料としては、アルミニウム、金、白金、銀、ニッケル、タングステン、クロム、モリブデン、鉄、コバルト、銅、又はパラジウム等の金属材料を用いることができる。そのほか、アルミニウムとチタンの合金、アルミニウムとニッケルの合金、アルミニウムとネオジムの合金などのアルミニウムを含む合金(アルミニウム合金)や銀と銅の合金などの銀を含む合金を用いることもできる。銀と銅の合金は、耐熱性が高いため好ましい。さらに、アルミニウム合金膜に接する金属膜、又は金属酸化物膜を積層することでアルミニウム合金膜の酸化を抑制することができる。該金属膜、金属酸化物膜の材料としては、チタン、酸化チタンなどが挙げられる。
封止膜202は、Ga又はAlと、Znと、Oとを含む絶縁膜からなる。Ga又はAlと、Znと、Oとを含む絶縁膜としては、機能層201に用いることができるGa又はAlと、Znと、Oとを含む絶縁膜と同様の構成を適用することができる。封止膜202は、単層であっても複数の層からなっていても良い。
本発明の一態様の保護部材及び該保護部材を適用した有機光デバイスについて図2及び図5を用いて説明する。本発明の一態様の保護部材は、有機光デバイスに適用することができる。該保護部材は、実施の形態1に示した有機光デバイスにも適用可能である。
機能層211は、ガリウム(Ga)又はアルミニウム(Al)と、亜鉛(Zn)と、酸素(O)を含む絶縁膜を有する。該絶縁膜を有機光デバイスの保護膜として用いることで、水素、水分又は不純物等が有機光デバイスの外部から有機化合物や金属材料に侵入することを抑制することができる。
発光体301は、有機化合物を含む。発光体301は、実施の形態1と同様の構成、材料を適用することができる。
ここで、本発明の一態様を適用した保護部材を構成するそれぞれ層の屈折率について説明する。
具体例1は、図2(C)に示す保護部材12を用いて説明する。図2(C)に示す保護部材12は、機能層211が単層で構成されている。
具体例2は、図2(D)に示す保護部材14を用いて説明する。図2(D)に示す保護部材14は、機能層211が2層で構成されている。
一般に、発光性の有機化合物を含む層を備えるEL層102(発光体に相当)は、屈折率が1.6以上である。前述の通り、発光体(又は発光性の有機化合物を含む層)の屈折率よりも小さい屈折率を有する媒体Bへ、媒体Bよりも屈折率の高い媒体Aから光が入射する際に、光は全反射することがある。
本実施の形態では、本発明の一態様に適用できる表裏にそれぞれ凹凸構造を備えた支持体について、図3を用いて説明する。
本実施の形態では、本発明の一態様に適用できるEL層の一例について、図4を用いて説明する。
本実施の形態では、本発明の一態様を適用した有機光デバイスの一例を、図11を用いて説明する。
まず、本実施例で作製したGZO膜について説明する。本実施例で作製したGZO膜は表1に示す3種類である。
構成例1として、Ga−Zn−O系金属酸化物ターゲット(Ga2O3:ZnO=1:5[mol数比])を用いて、厚さ100nmのGZO膜を形成した。
構成例2として、Ga−Zn−O系金属酸化物ターゲット(Ga2O3:ZnO=1:1[mol数比])を用いて、厚さ100nmのGZO膜を形成した。
構成例3として、Ga−Zn−O系金属酸化物ターゲット(Ga2O3:ZnO=5:1[mol数比])を用いて、厚さ100nmのGZO膜を形成した。
次に、構成例1乃至構成例3の屈折率をそれぞれ測定した。本実施例では、エリプソメトリ法を用いて屈折率を求めた。
次に、構成例1乃至構成例3の透過率をそれぞれ測定した。本実施例では、分光光度計を用いて透過率の値を得た。
まず、本実施例で作製したGZO膜について説明する。本実施例で作製したGZO膜は表2に示す12種類である。
構成例A−1として、Ga−Zn−O系金属酸化物ターゲット(Ga2O3:ZnO=1:5[mol数比])を用いて、アルゴン及び酸素(流量比率は、アルゴン:酸素=7:3)混合雰囲気下、室温で厚さ250nmのGZO膜を形成した。
構成例A−2として、Ga−Zn−O系金属酸化物ターゲット(Ga2O3:ZnO=1:5[mol数比])を用いて、酸素雰囲気下、室温で厚さ90nmのGZO膜を形成した。
構成例A−3として、Ga−Zn−O系金属酸化物ターゲット(Ga2O3:ZnO=1:5[mol数比])を用いて、アルゴン及び酸素(流量比率は、アルゴン:酸素=7:3)混合雰囲気下、基板加熱温度200℃の条件で厚さ200nmのGZO膜を形成した。
構成例A−4として、Ga−Zn−O系金属酸化物ターゲット(Ga2O3:ZnO=1:5[mol数比])を用いて、酸素雰囲気下、基板加熱温度200℃の条件で厚さ150nmのGZO膜を形成した。
構成例B−1として、Ga−Zn−O系金属酸化物ターゲット(Ga2O3:ZnO=1:1[mol数比])を用いて、アルゴン及び酸素(流量比率は、アルゴン:酸素=7:3)混合雰囲気下、室温で厚さ180nmのGZO膜を形成した。
構成例B−2として、Ga−Zn−O系金属酸化物ターゲット(Ga2O3:ZnO=1:1[mol数比])を用いて、酸素雰囲気下、室温で厚さ50nmのGZO膜を形成した。
構成例B−3では、Ga−Zn−O系金属酸化物ターゲット(Ga2O3:ZnO=1:1[mol数比])を用いて、アルゴン及び酸素(流量比率は、アルゴン:酸素=7:3)混合雰囲気下、基板加熱温度200℃の条件で厚さ150nmのGZO膜を形成した。
構成例B−4として、Ga−Zn−O系金属酸化物ターゲット(Ga2O3:ZnO=1:1[mol数比])を用いて、酸素雰囲気下、基板加熱温度200℃の条件で厚さ90nmのGZO膜を形成した。
構成例C−1として、Ga−Zn−O系金属酸化物ターゲット(Ga2O3:ZnO=5:1[mol数比])を用いて、アルゴン及び酸素(流量比率は、アルゴン:酸素=7:3)混合雰囲気下、室温で厚さ160nmのGZO膜を形成した。
構成例C−2として、Ga−Zn−O系金属酸化物ターゲット(Ga2O3:ZnO=5:1[mol数比])を用いて、酸素雰囲気下、室温で厚さ50nmのGZO膜を形成した。
構成例C−3として、Ga−Zn−O系金属酸化物ターゲット(Ga2O3:ZnO=5:1[mol数比])を用いて、アルゴン及び酸素(流量比率は、アルゴン:酸素=7:3)混合雰囲気下、基板加熱温度200℃の条件で厚さ160nmのGZO膜を形成した。
構成例C−4として、Ga−Zn−O系金属酸化物ターゲット(Ga2O3:ZnO=5:1[mol数比])を用いて、酸素雰囲気下、基板加熱温度200℃の条件で厚さ90nmのGZO膜を形成した。
次に、構成例A−1乃至構成例A−4、構成例B−1乃至構成例B−4、及び構成例C−1乃至構成例C−4の屈折率をそれぞれ測定した。
12 保護部材
14 保護部材
101 支持体
102 EL層
103 第1の電極
108 第2の電極
111 第1の材料層
112 第2の材料層
113 第3の材料層
201 機能層
202 封止膜
207 シール材
208 乾燥剤
209 封止基板
211 機能層
212 第1の膜
213 第2の膜
221 第1機能層
222 第2機能層
230 平坦化膜
301 発光体
701 正孔注入層
702 正孔輸送層
703 発光性の有機化合物を含む層
704 電子輸送層
705 電子注入層
706 電子注入バッファー層
707 電子リレー層
708 複合材料層
800 第1のEL層
801 第2のEL層
803 電荷発生層
Claims (17)
- 支持体と、
前記支持体上に設けられた機能層と、
前記機能層上に設けられた有機化合物を含む発光体と、を有し、
前記機能層は、ガリウム又はアルミニウムと、亜鉛と、酸素とを含む絶縁膜を有し、
前記支持体及び前記機能層は、波長が400nm以上700nm以下の領域で透光性を有する有機光デバイス。 - 支持体と、
前記支持体上に設けられた機能層と、
前記機能層上に設けられた第1の電極と、
前記第1の電極上に設けられた発光性の有機化合物を含む層と、
前記発光性の有機化合物を含む層上に設けられた第2の電極と、を有し、
前記機能層は、ガリウム又はアルミニウムと、亜鉛と、酸素とを含む絶縁膜を有し、
前記支持体、前記機能層、及び前記第1の電極は、波長が400nm以上700nm以下の領域で透光性を有する有機光デバイス。 - 請求項2において、
前記第2の電極を覆う封止膜を有し、
前記封止膜は、前記機能層と接し、
前記封止膜が、ガリウム又はアルミニウムと、亜鉛と、酸素とを含む有機光デバイス。 - 請求項3において、
前記封止膜が、窒素を含む有機光デバイス。 - 請求項1乃至請求項4のいずれか一項において、
前記絶縁膜が、窒素を含む有機光デバイス。 - 請求項1乃至請求項5のいずれか一項において、
前記絶縁膜は、ガリウム、アルミニウム、亜鉛、酸素、及び窒素以外の元素の総和が原子比0.1以下である有機光デバイス。 - 請求項1乃至請求項6のいずれか一項において、
前記絶縁膜は、20℃における固有抵抗が、1010Ωcm以上である有機光デバイス。 - ガリウム又はアルミニウムと、亜鉛と、酸素とを含む絶縁膜を有する機能層と、
前記機能層の一方の面と接する、第1の膜と、
前記機能層の他方の面と接する、第2の膜と、を有し、
波長が400nm以上700nm以下の領域で透光性を有し、
前記機能層が有する層の屈折率は、接する層の屈折率との差がそれぞれ0.2以下である有機光デバイスの保護部材。 - 請求項8において、
前記絶縁膜が、窒素を含む有機光デバイスの保護部材。 - 請求項8又は請求項9において、
前記絶縁膜は、ガリウム、アルミニウム、亜鉛、酸素、及び窒素以外の元素の総和が原子比0.1以下である有機光デバイスの保護部材。 - 請求項8乃至請求項10のいずれか一項において、
前記絶縁膜は、20℃における固有抵抗が、1010Ωcm以上である有機光デバイスの保護部材。 - 請求項8乃至請求項11のいずれか一項に記載の有機光デバイスの保護部材と、
前記有機光デバイスの保護部材上に設けられた有機化合物を含む発光体と、を有する有機光デバイス。 - 請求項8乃至請求項11のいずれか一項に記載の有機光デバイスの保護部材と、
前記有機光デバイスの保護部材上に設けられた発光性の有機化合物を含む層と、
前記発光性の有機化合物を含む層上に設けられた第2の電極と、を有し、
前記第2の膜は、第1の電極として機能する有機光デバイス。 - 請求項13において、
前記第2の電極を覆う封止膜を有し、
前記封止膜は、前記機能層と接し、
前記封止膜が、ガリウム又はアルミニウムと、亜鉛と、酸素とを含む絶縁膜である有機光デバイス。 - 請求項14において、
前記封止膜が、窒素を含む有機光デバイス。 - 請求項13乃至請求項15のいずれか一項において、
前記機能層が備える層、前記第1の膜、及び前記第2の膜の屈折率は、前記発光性の有機化合物を含む層の屈折率以上である有機光デバイス。 - 請求項13乃至請求項16のいずれか一項において、
前記第1の膜と大気との界面に凹凸の構造を有する有機光デバイス。
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