JP2012074194A5 - - Google Patents
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- Publication number
- JP2012074194A5 JP2012074194A5 JP2010217084A JP2010217084A JP2012074194A5 JP 2012074194 A5 JP2012074194 A5 JP 2012074194A5 JP 2010217084 A JP2010217084 A JP 2010217084A JP 2010217084 A JP2010217084 A JP 2010217084A JP 2012074194 A5 JP2012074194 A5 JP 2012074194A5
- Authority
- JP
- Japan
- Prior art keywords
- charged particle
- sample
- particle beam
- thin film
- integer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002245 particle Substances 0.000 claims 25
- 239000007789 gas Substances 0.000 claims 16
- 239000010409 thin film Substances 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 8
- 150000003377 silicon compounds Chemical class 0.000 claims 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 6
- 125000005843 halogen group Chemical group 0.000 claims 5
- 230000001678 irradiating effect Effects 0.000 claims 5
- 230000007547 defect Effects 0.000 claims 4
- 238000010884 ion-beam technique Methods 0.000 claims 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 239000010408 film Substances 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 239000002994 raw material Substances 0.000 claims 3
- 238000003852 thin film production method Methods 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- CVLHDNLPWKYNNR-UHFFFAOYSA-N pentasilolane Chemical compound [SiH2]1[SiH2][SiH2][SiH2][SiH2]1 CVLHDNLPWKYNNR-UHFFFAOYSA-N 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052754 neon Inorganic materials 0.000 claims 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 229910001868 water Inorganic materials 0.000 claims 1
- 229910052724 xenon Inorganic materials 0.000 claims 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010217084A JP5442572B2 (ja) | 2010-09-28 | 2010-09-28 | 荷電粒子ビーム装置、薄膜作製方法、欠陥修正方法及びデバイス作製方法 |
| PCT/JP2011/071578 WO2012043363A1 (ja) | 2010-09-28 | 2011-09-22 | 荷電粒子ビーム装置、薄膜作製方法、欠陥修正方法及びデバイス作製方法 |
| US13/876,274 US9257273B2 (en) | 2010-09-28 | 2011-09-22 | Charged particle beam apparatus, thin film forming method, defect correction method and device forming method |
| EP11828920.6A EP2624279B1 (en) | 2010-09-28 | 2011-09-22 | Charged particle beam device, thin film forming method, defect correction method and device fabrication method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010217084A JP5442572B2 (ja) | 2010-09-28 | 2010-09-28 | 荷電粒子ビーム装置、薄膜作製方法、欠陥修正方法及びデバイス作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012074194A JP2012074194A (ja) | 2012-04-12 |
| JP2012074194A5 true JP2012074194A5 (https=) | 2012-08-02 |
| JP5442572B2 JP5442572B2 (ja) | 2014-03-12 |
Family
ID=45892814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010217084A Expired - Fee Related JP5442572B2 (ja) | 2010-09-28 | 2010-09-28 | 荷電粒子ビーム装置、薄膜作製方法、欠陥修正方法及びデバイス作製方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9257273B2 (https=) |
| EP (1) | EP2624279B1 (https=) |
| JP (1) | JP5442572B2 (https=) |
| WO (1) | WO2012043363A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010055564A1 (de) * | 2010-12-23 | 2012-06-28 | Johann-Wolfgang-Goethe Universität Frankfurt am Main | Verfahren und Vorrichtung zur Abscheidung von Silizium auf einem Substrat |
| JP6529264B2 (ja) * | 2014-01-22 | 2019-06-12 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム装置および試料観察方法 |
| US9735019B2 (en) * | 2014-09-05 | 2017-08-15 | Tel Epion Inc. | Process gas enhancement for beam treatment of a substrate |
| JP6703903B2 (ja) * | 2016-06-16 | 2020-06-03 | 株式会社日立製作所 | 微細構造体の加工方法および微細構造体の加工装置 |
| KR102385038B1 (ko) * | 2020-03-16 | 2022-04-12 | 티오에스주식회사 | 단결정 금속산화물 반도체 에피 성장 장치 |
| KR102336228B1 (ko) * | 2020-04-06 | 2021-12-09 | 티오에스주식회사 | 챔버 분리형 에피 성장 장치 |
| DE102020120884B4 (de) * | 2020-08-07 | 2025-06-05 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Ätzen einer Lithographiemaske |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1145991A (en) | 1965-03-12 | 1969-03-19 | Mullard Ltd | Improvements in and relating to methods of manufacturing electrical circuit arrangements |
| KR0123046B1 (ko) * | 1993-08-31 | 1997-11-24 | 배순훈 | 콤팩트 디스크 체인저 |
| US5700526A (en) * | 1995-05-04 | 1997-12-23 | Schlumberger Technologies Inc. | Insulator deposition using focused ion beam |
| JPH0945922A (ja) * | 1995-07-27 | 1997-02-14 | Showa Denko Kk | 多結晶シリコン膜の形成方法 |
| JP2000012465A (ja) | 1998-06-22 | 2000-01-14 | Sharp Corp | シリコン膜の形成方法及び太陽電池の製造方法 |
| CN1297578A (zh) | 1999-03-30 | 2001-05-30 | 捷时雅株式会社 | 硅氧化膜的形成方法 |
| US6891171B1 (en) | 1999-04-21 | 2005-05-10 | Sii Nanotechnology Inc. | Method for repairing a phase shift mask and a focused ion beam apparatus for carrying out method |
| JP4031146B2 (ja) | 1999-04-22 | 2008-01-09 | エスアイアイ・ナノテクノロジー株式会社 | 表示素子の修正装置 |
| DE60128611T2 (de) | 2000-03-13 | 2008-01-31 | Jsr Corp. | Cyclosilan, eine flüssige Zusammensetzung und ein Verfahren zur Bildung eines Silicium-Films |
| JP3424232B2 (ja) * | 2000-03-13 | 2003-07-07 | ジェイエスアール株式会社 | シリコン膜の形成方法 |
| JP2002087809A (ja) | 2000-09-11 | 2002-03-27 | Jsr Corp | シリコン膜の形成方法 |
| JP3745959B2 (ja) * | 2000-12-28 | 2006-02-15 | セイコーエプソン株式会社 | シリコン薄膜パターンの形成方法 |
| JP4567321B2 (ja) * | 2003-11-28 | 2010-10-20 | エスアイアイ・ナノテクノロジー株式会社 | 集積回路の配線変更方法 |
| US7314513B1 (en) | 2004-09-24 | 2008-01-01 | Kovio, Inc. | Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions |
| JP2008012391A (ja) | 2006-07-03 | 2008-01-24 | Clean Technology Kk | 薄膜塗布装置のノズル構造 |
| US7892978B2 (en) * | 2006-07-10 | 2011-02-22 | Micron Technology, Inc. | Electron induced chemical etching for device level diagnosis |
| JP5384786B2 (ja) * | 2006-11-14 | 2014-01-08 | 株式会社日立ハイテクノロジーズ | 荷電ビーム装置、及びその鏡体 |
| JP5183912B2 (ja) * | 2006-11-21 | 2013-04-17 | 株式会社日立ハイテクノロジーズ | 荷電ビーム装置、及びそのクリーニング方法 |
| US7500397B2 (en) | 2007-02-15 | 2009-03-10 | Air Products And Chemicals, Inc. | Activated chemical process for enhancing material properties of dielectric films |
| JP5181105B2 (ja) | 2007-03-02 | 2013-04-10 | 株式会社日立ハイテクサイエンス | 集積回路の修正配線形成方法 |
| JP2010079842A (ja) | 2008-09-29 | 2010-04-08 | Hitachi Software Eng Co Ltd | 電子新聞保存管理システム及び新聞記事データ管理方法 |
| JP5604044B2 (ja) * | 2009-01-09 | 2014-10-08 | 独立行政法人科学技術振興機構 | 高次シラン組成物および膜付基板の製造方法 |
| JP2010206161A (ja) * | 2009-02-04 | 2010-09-16 | Sony Corp | 成膜方法および半導体装置の製造方法 |
-
2010
- 2010-09-28 JP JP2010217084A patent/JP5442572B2/ja not_active Expired - Fee Related
-
2011
- 2011-09-22 WO PCT/JP2011/071578 patent/WO2012043363A1/ja not_active Ceased
- 2011-09-22 EP EP11828920.6A patent/EP2624279B1/en not_active Not-in-force
- 2011-09-22 US US13/876,274 patent/US9257273B2/en active Active
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