JP2005208120A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2005208120A5 JP2005208120A5 JP2004011787A JP2004011787A JP2005208120A5 JP 2005208120 A5 JP2005208120 A5 JP 2005208120A5 JP 2004011787 A JP2004011787 A JP 2004011787A JP 2004011787 A JP2004011787 A JP 2004011787A JP 2005208120 A5 JP2005208120 A5 JP 2005208120A5
- Authority
- JP
- Japan
- Prior art keywords
- sample
- electron beam
- correction method
- objective lens
- correction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000010894 electron beam technology Methods 0.000 claims 23
- 238000000034 method Methods 0.000 claims 13
- 238000000151 deposition Methods 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- 230000008021 deposition Effects 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- 238000000465 moulding Methods 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 2
- 238000001459 lithography Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000007493 shaping process Methods 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004011787A JP2005208120A (ja) | 2004-01-20 | 2004-01-20 | 試料修正装置及び試料修正方法並びに該方法を用いたデバイス製造方法 |
| US11/037,093 US7256405B2 (en) | 2004-01-20 | 2005-01-19 | Sample repairing apparatus, a sample repairing method and a device manufacturing method using the same method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004011787A JP2005208120A (ja) | 2004-01-20 | 2004-01-20 | 試料修正装置及び試料修正方法並びに該方法を用いたデバイス製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005208120A JP2005208120A (ja) | 2005-08-04 |
| JP2005208120A5 true JP2005208120A5 (https=) | 2007-02-01 |
Family
ID=34898377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004011787A Ceased JP2005208120A (ja) | 2004-01-20 | 2004-01-20 | 試料修正装置及び試料修正方法並びに該方法を用いたデバイス製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7256405B2 (https=) |
| JP (1) | JP2005208120A (https=) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10353591A1 (de) * | 2003-11-17 | 2005-06-02 | Infineon Technologies Ag | Verfahren zum lokal begrenzten Ätzen einer Chromschicht |
| US7670956B2 (en) * | 2005-04-08 | 2010-03-02 | Fei Company | Beam-induced etching |
| WO2007051312A1 (en) * | 2005-11-07 | 2007-05-10 | Fibics Incorporated | Apparatus and method for surface modification using charged particle beams |
| US7692163B2 (en) | 2006-01-31 | 2010-04-06 | Kabushiki Kaisha Toshiba | Charged particle beam apparatus, defect correcting method, etching method, deposition method, and charge preventing method |
| JP4543047B2 (ja) * | 2006-01-31 | 2010-09-15 | 株式会社東芝 | 荷電ビーム装置および欠陥修正方法 |
| US7807062B2 (en) * | 2006-07-10 | 2010-10-05 | Micron Technology, Inc. | Electron induced chemical etching and deposition for local circuit repair |
| US7892978B2 (en) * | 2006-07-10 | 2011-02-22 | Micron Technology, Inc. | Electron induced chemical etching for device level diagnosis |
| US7791055B2 (en) | 2006-07-10 | 2010-09-07 | Micron Technology, Inc. | Electron induced chemical etching/deposition for enhanced detection of surface defects |
| US7791071B2 (en) | 2006-08-14 | 2010-09-07 | Micron Technology, Inc. | Profiling solid state samples |
| US7718080B2 (en) | 2006-08-14 | 2010-05-18 | Micron Technology, Inc. | Electronic beam processing device and method using carbon nanotube emitter |
| US7833427B2 (en) * | 2006-08-14 | 2010-11-16 | Micron Technology, Inc. | Electron beam etching device and method |
| DE102007054074A1 (de) * | 2007-11-13 | 2009-05-14 | Carl Zeiss Nts Gmbh | System zum Bearbeiten eines Objekts |
| JP5709535B2 (ja) * | 2011-01-07 | 2015-04-30 | キヤノン株式会社 | 電子ビーム描画装置、およびそれを用いた物品の製造方法 |
| CN106933063B (zh) * | 2012-03-20 | 2019-01-18 | 迈普尔平版印刷Ip有限公司 | 电子射束光刻系统 |
| CN106680305B (zh) | 2016-11-23 | 2023-08-04 | 聚束科技(北京)有限公司 | 一种真空气氛处理装置、样品观测系统及方法 |
| UA122437C2 (uk) | 2018-11-06 | 2020-11-10 | Приватне Акціонерне Товариство "Нво "Червона Хвиля" | Пристрій для виготовлення тривимірних об'єктів |
| DE102022208597B4 (de) * | 2022-08-18 | 2026-03-05 | Carl Zeiss Microscopy Gmbh | Vorrichtung zum Abbilden und Bearbeiten einer Probe mit einem fokussierten Teilchenstrahl |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5429730A (en) * | 1992-11-02 | 1995-07-04 | Kabushiki Kaisha Toshiba | Method of repairing defect of structure |
| US6392333B1 (en) * | 1999-03-05 | 2002-05-21 | Applied Materials, Inc. | Electron gun having magnetic collimator |
| US7138629B2 (en) * | 2003-04-22 | 2006-11-21 | Ebara Corporation | Testing apparatus using charged particles and device manufacturing method using the testing apparatus |
| US7420164B2 (en) * | 2004-05-26 | 2008-09-02 | Ebara Corporation | Objective lens, electron beam system and method of inspecting defect |
-
2004
- 2004-01-20 JP JP2004011787A patent/JP2005208120A/ja not_active Ceased
-
2005
- 2005-01-19 US US11/037,093 patent/US7256405B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2005208120A5 (https=) | ||
| KR101015116B1 (ko) | 하전(荷電) 입자 빔 시스템 | |
| CN1293592C (zh) | 电子枪 | |
| TWI803572B (zh) | 帶電粒子束裝置、試料加工觀察方法 | |
| CN102315066B (zh) | 带电粒子束装置以及试样加工方法 | |
| US11662323B2 (en) | Method and system for inspecting an EUV mask | |
| US20080099697A1 (en) | Charged particle beam apparatus, method of adjusting astigmatism using same and method of manufacturing device using same | |
| TW201919087A (zh) | 帶電粒子束裝置、帶電粒子束支配裝置和操作帶電粒子束裝置的方法 | |
| CN1645548A (zh) | 带电粒子束装置、控制方法、基板检查方法及半导体器件制造方法 | |
| JP2005208120A (ja) | 試料修正装置及び試料修正方法並びに該方法を用いたデバイス製造方法 | |
| JP2019212766A (ja) | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 | |
| US20080156998A1 (en) | Focused Ion Beam Apparatus | |
| WO2007086254A1 (ja) | 荷電粒子ビーム装置 | |
| JP2020140928A (ja) | 荷電粒子マルチビーム装置 | |
| JP2010153278A (ja) | 荷電粒子線加工装置 | |
| JP3706055B2 (ja) | Euvリソグラフィ用マスクの白欠陥修正方法 | |
| US7109501B2 (en) | Charged particle beam lithography system, pattern drawing method, and method of manufacturing semiconductor device | |
| US9859089B2 (en) | Method and system for inspecting and grounding an EUV mask | |
| CN206451682U (zh) | 一种电子源产生装置 | |
| JP4008827B2 (ja) | 荷電ビーム制御方法、これを用いた半導体装置の製造方法および荷電ビーム装置 | |
| JP5189058B2 (ja) | 走査形電子顕微鏡 | |
| JP2009146884A (ja) | 電子銃及び電子線装置 | |
| WO2010109647A1 (ja) | マルチコラム電子線描画用マスク保持装置及びマルチコラム電子線描画装置 | |
| WO2026002579A1 (en) | Method for operating a multiple particle beam system and multiple particle beam system having electrostatic trapping electrodes and/or a trapping trench system for protecting the micro-optical unit | |
| JP4446685B2 (ja) | 荷電粒子線発生方法、電子線露光方法および電子線近接露光方法、ならびに荷電粒子線装置、電子線露光装置および電子線近接露光装置 |