JP2005208120A - 試料修正装置及び試料修正方法並びに該方法を用いたデバイス製造方法 - Google Patents

試料修正装置及び試料修正方法並びに該方法を用いたデバイス製造方法 Download PDF

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Publication number
JP2005208120A
JP2005208120A JP2004011787A JP2004011787A JP2005208120A JP 2005208120 A JP2005208120 A JP 2005208120A JP 2004011787 A JP2004011787 A JP 2004011787A JP 2004011787 A JP2004011787 A JP 2004011787A JP 2005208120 A JP2005208120 A JP 2005208120A
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Japan
Prior art keywords
sample
electron beam
objective lens
corrected
electron
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Ceased
Application number
JP2004011787A
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English (en)
Japanese (ja)
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JP2005208120A5 (https=
Inventor
Mamoru Nakasuji
護 中筋
Takao Kato
隆男 加藤
Toru Satake
徹 佐竹
Kenji Terao
健二 寺尾
Takeshi Murakami
武司 村上
Shinji Nomichi
伸治 野路
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2004011787A priority Critical patent/JP2005208120A/ja
Priority to US11/037,093 priority patent/US7256405B2/en
Publication of JP2005208120A publication Critical patent/JP2005208120A/ja
Publication of JP2005208120A5 publication Critical patent/JP2005208120A5/ja
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/188—Differential pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
JP2004011787A 2004-01-20 2004-01-20 試料修正装置及び試料修正方法並びに該方法を用いたデバイス製造方法 Ceased JP2005208120A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004011787A JP2005208120A (ja) 2004-01-20 2004-01-20 試料修正装置及び試料修正方法並びに該方法を用いたデバイス製造方法
US11/037,093 US7256405B2 (en) 2004-01-20 2005-01-19 Sample repairing apparatus, a sample repairing method and a device manufacturing method using the same method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004011787A JP2005208120A (ja) 2004-01-20 2004-01-20 試料修正装置及び試料修正方法並びに該方法を用いたデバイス製造方法

Publications (2)

Publication Number Publication Date
JP2005208120A true JP2005208120A (ja) 2005-08-04
JP2005208120A5 JP2005208120A5 (https=) 2007-02-01

Family

ID=34898377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004011787A Ceased JP2005208120A (ja) 2004-01-20 2004-01-20 試料修正装置及び試料修正方法並びに該方法を用いたデバイス製造方法

Country Status (2)

Country Link
US (1) US7256405B2 (https=)
JP (1) JP2005208120A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234583A (ja) * 2006-01-31 2007-09-13 Toshiba Corp 荷電ビーム装置および欠陥修正方法
US7692163B2 (en) 2006-01-31 2010-04-06 Kabushiki Kaisha Toshiba Charged particle beam apparatus, defect correcting method, etching method, deposition method, and charge preventing method
KR20240025466A (ko) * 2022-08-18 2024-02-27 칼 짜이스 에스엠티 게엠베하 집속 입자 빔을 이용한 샘플의 이미징 및 프로세싱 장치

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10353591A1 (de) * 2003-11-17 2005-06-02 Infineon Technologies Ag Verfahren zum lokal begrenzten Ätzen einer Chromschicht
US7670956B2 (en) * 2005-04-08 2010-03-02 Fei Company Beam-induced etching
WO2007051312A1 (en) * 2005-11-07 2007-05-10 Fibics Incorporated Apparatus and method for surface modification using charged particle beams
US7807062B2 (en) * 2006-07-10 2010-10-05 Micron Technology, Inc. Electron induced chemical etching and deposition for local circuit repair
US7892978B2 (en) * 2006-07-10 2011-02-22 Micron Technology, Inc. Electron induced chemical etching for device level diagnosis
US7791055B2 (en) 2006-07-10 2010-09-07 Micron Technology, Inc. Electron induced chemical etching/deposition for enhanced detection of surface defects
US7791071B2 (en) 2006-08-14 2010-09-07 Micron Technology, Inc. Profiling solid state samples
US7718080B2 (en) 2006-08-14 2010-05-18 Micron Technology, Inc. Electronic beam processing device and method using carbon nanotube emitter
US7833427B2 (en) * 2006-08-14 2010-11-16 Micron Technology, Inc. Electron beam etching device and method
DE102007054074A1 (de) * 2007-11-13 2009-05-14 Carl Zeiss Nts Gmbh System zum Bearbeiten eines Objekts
JP5709535B2 (ja) * 2011-01-07 2015-04-30 キヤノン株式会社 電子ビーム描画装置、およびそれを用いた物品の製造方法
CN106933063B (zh) * 2012-03-20 2019-01-18 迈普尔平版印刷Ip有限公司 电子射束光刻系统
CN106680305B (zh) 2016-11-23 2023-08-04 聚束科技（北京）有限公司 一种真空气氛处理装置、样品观测系统及方法
UA122437C2 (uk) 2018-11-06 2020-11-10 Приватне Акціонерне Товариство "Нво "Червона Хвиля" Пристрій для виготовлення тривимірних об'єктів

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5429730A (en) * 1992-11-02 1995-07-04 Kabushiki Kaisha Toshiba Method of repairing defect of structure
US6392333B1 (en) * 1999-03-05 2002-05-21 Applied Materials, Inc. Electron gun having magnetic collimator
US7138629B2 (en) * 2003-04-22 2006-11-21 Ebara Corporation Testing apparatus using charged particles and device manufacturing method using the testing apparatus
US7420164B2 (en) * 2004-05-26 2008-09-02 Ebara Corporation Objective lens, electron beam system and method of inspecting defect

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234583A (ja) * 2006-01-31 2007-09-13 Toshiba Corp 荷電ビーム装置および欠陥修正方法
US7692163B2 (en) 2006-01-31 2010-04-06 Kabushiki Kaisha Toshiba Charged particle beam apparatus, defect correcting method, etching method, deposition method, and charge preventing method
KR20240025466A (ko) * 2022-08-18 2024-02-27 칼 짜이스 에스엠티 게엠베하 집속 입자 빔을 이용한 샘플의 이미징 및 프로세싱 장치
JP2024028220A (ja) * 2022-08-18 2024-03-01 カール・ツァイス・エスエムティー・ゲーエムベーハー 集束粒子ビームを使用してサンプルを結像（ｉｍａｇｅ）および処理するためのデバイス
KR102815412B1 (ko) * 2022-08-18 2025-05-30 칼 짜이스 에스엠티 게엠베하 집속 입자 빔을 이용한 샘플의 이미징 및 프로세싱 장치
JP7713496B2 (ja) 2022-08-18 2025-07-25 カール・ツァイス・エスエムティー・ゲーエムベーハー 集束粒子ビームを使用してサンプルを結像（ｉｍａｇｅ）および処理するためのデバイス
TWI906650B (zh) * 2022-08-18 2025-12-01 德商卡爾蔡司Ｓｍｔ有限公司 利用聚焦粒子束對樣品進行成像和處理的裝置

Also Published As

Publication number Publication date
US20050211925A1 (en) 2005-09-29
US7256405B2 (en) 2007-08-14

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