WO2012043363A1 - 荷電粒子ビーム装置、薄膜作製方法、欠陥修正方法及びデバイス作製方法 - Google Patents

荷電粒子ビーム装置、薄膜作製方法、欠陥修正方法及びデバイス作製方法 Download PDF

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Publication number
WO2012043363A1
WO2012043363A1 PCT/JP2011/071578 JP2011071578W WO2012043363A1 WO 2012043363 A1 WO2012043363 A1 WO 2012043363A1 JP 2011071578 W JP2011071578 W JP 2011071578W WO 2012043363 A1 WO2012043363 A1 WO 2012043363A1
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Prior art keywords
charged particle
sample
particle beam
thin film
gas
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English (en)
French (fr)
Japanese (ja)
Inventor
喜弘 小山
行人 八坂
下田　達也
松木　安生
陵 川尻
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JSR Corp
Japan Science and Technology Agency
Hitachi High Tech Analysis Corp
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JSR Corp
Japan Science and Technology Agency
SII NanoTechnology Inc
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Priority to US13/876,274 priority Critical patent/US9257273B2/en
Priority to EP11828920.6A priority patent/EP2624279B1/en
Publication of WO2012043363A1 publication Critical patent/WO2012043363A1/ja
Anticipated expiration legal-status Critical
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    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/487—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using electron radiation
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
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Definitions

  • the present invention relates to a charged particle beam apparatus for processing a sample with a charged particle beam.
  • TEM transmission electron microscope
  • Cutting out a minute portion from a semiconductor wafer is performed by etching using a focused ion beam (FIB). And the cut-out micro part is observed with a TEM apparatus.
  • the semiconductor wafer from which the minute portion has been cut out is returned to the device manufacturing process.
  • the processing hole formed at the time of cutting out the minute portion is filled with local silicon film deposition by FIB. Thereby, it is possible to prevent diffusion of FIB ion species implanted into the semiconductor wafer by FIB irradiation in the device manufacturing process.
  • a technique for cutting and connecting wiring using a charged particle beam device for wiring correction.
  • a processed hole is formed by FIB around the corrected portion.
  • the wiring at the correction portion is cut by etching.
  • metal wiring is produced so that it may become suitable wiring by irradiating a charged particle beam, supplying metal containing gas.
  • the processed hole formed around the correction portion is filled with local silicon oxide film deposition by an electron beam using, for example, a silane-based gas (Patent Document 1). As a result, the device can be operated normally after the wiring is corrected.
  • the conventional silicon-based film formation using an electron beam or a focused ion beam has a drawback that the film formation rate is slow.
  • silicon hydrides and halides containing one silicon in one molecule such as silane (SiH4), silicon iodide (SiI4), and trichlorosilane (SiHCl3) have been used as film forming gases. These substances are gases at room temperature. In addition, these substances adsorb on the metal surface in Langmuir type. In Langmuir type adsorption, only one molecule is adsorbed at the adsorption site on the surface. In addition, Langmuir adsorption does not cause multilayer adsorption. Therefore, the amount of adsorption to the surface is small.
  • a film is formed by supplying a source gas to a sample and decomposing the components of the source gas adsorbed on the sample with a charged particle beam. Therefore, if the amount of gas adsorbed on the sample is small, the film forming speed is slow.
  • the present invention has been made in view of such circumstances, and the object thereof is a semiconductor film faster than conventional charged particle beam induced semiconductor film deposition using a silicon hydride or halide as a source gas. To provide a charged particle beam apparatus capable of deposition.
  • the present invention provides the following means.
  • a charged particle beam apparatus includes a charged particle source, a focusing lens electrode for focusing the charged particle beam extracted from the charged particle source, and a blanking electrode for switching between irradiation and non-irradiation of the charged particle beam.
  • a scanning electrode for scanning and irradiating a charged particle beam; a sample stage for placing a sample; a secondary charged particle detector for detecting secondary charged particles generated from the sample by charged particle beam irradiation;
  • a reservoir for storing a silicon compound represented by the following general formula (I) as a source gas, and a gas gun for supplying the source gas to the irradiation position of the charged particle beam of the sample.
  • n represents an integer of 3 or more
  • m represents an integer of n, 2n-2, 2n, or 2n + 2
  • X represents a hydrogen atom and / or a halogen atom
  • the silicon compound is cyclopentasilane.
  • cyclopentasilane can be vaporized and a film can be efficiently formed locally.
  • the charged particle beam is an electron beam.
  • a film containing no impurities can be formed.
  • the charged particle beam is a kind of ion beam selected from gallium, gold, silicon, hydrogen, helium, neon, argon, xenon, oxygen, nitrogen, or carbon.
  • membrane containing said ion and a silicon compound can be formed.
  • a film in which the above ions react with the silicon compound can be formed.
  • the charged particle beam apparatus has a second gas supply system that supplies a source gas different from the source gas.
  • steam of a silicon compound can be formed.
  • a film in which a vapor component different from the vapor of the silicon compound reacts can be formed.
  • the thin film manufacturing method includes a step of irradiating a focused ion beam to form a pair of recessed portions spaced apart from each other on a part of the surface of the sample, and forming a thin sample between the recessed portions. And a step of supplying a silicon compound represented by the following general formula (I) as a raw material gas to the recess and irradiating a charged particle beam to form a film.
  • a silicon compound represented by the following general formula (I) as a raw material gas to the recess and irradiating a charged particle beam to form a film.
  • the defect correction method supplies a silicon compound represented by the following general formula (I) as a raw material gas to a defect part of a nanoimprint mold, irradiates the defect part with a charged particle beam, forms a film, Correct the defective part.
  • a device manufacturing method is a process of supplying a silicon compound represented by the following general formula (I) as a source gas to a sample, irradiating the sample with a first charged particle beam, and manufacturing a first thin film. Supplying a source gas to the sample, irradiating the sample with a second charged particle beam of a beam type different from the first charged particle beam, and producing a second thin film having a function different from the above thin film; Have.
  • n represents an integer of 3 or more
  • m represents an integer of n, 2n-2, 2n, or 2n + 2
  • X represents a hydrogen atom and / or a halogen atom
  • semiconductor film deposition can be performed at a higher speed than conventional deposition using silicon hydride or halide as a source gas.
  • the charged particle beam apparatus includes a charged particle source 1 that generates a charged particle beam 6 and a charged particle optical system, as shown in FIG.
  • the charged particle optical system includes a focusing lens electrode 2, a blanking electrode 3, a scanning electrode 4 for scanning, and an objective lens electrode 5.
  • the focusing lens electrode 2 forms a focusing lens for focusing the charged particle beam 6 generated from the charged particle source 1.
  • the blanking electrode 3 forms an electric field that deflects the charged particle beam 6 when the sample 9 is not irradiated with the charged particle beam 6.
  • the scanning electrode 4 scans the charged particle beam 6.
  • the objective lens electrode 5 forms an objective lens for focusing the charged particle beam 6 on the surface of the sample 6.
  • the charged particle beam apparatus includes a sample stage 10 on which a sample 9 is placed and which can move in the directions of three axes of X, Y, and Z and five axes that are inclined and rotated.
  • the charged particle beam apparatus includes a secondary charged particle detector 8 that irradiates the sample 9 with the charged particle beam 6 and detects the secondary charged particles 7 emitted from the sample 9. Furthermore, the control part 12 which outputs a control signal to the charged particle source 1 and a charged particle optical system is provided. The control unit 12 outputs a scanning signal to the scanning electrode 4. Further, the secondary charged particle detector 8 outputs a secondary electron signal to the control unit 12. The controller 12 forms an observation image from the secondary charged particle signal and the scanning signal. Moreover, the display part 13 which displays the formed observed image is provided.
  • the charged particle beam apparatus includes a gas gun 11 that supplies a source gas for deposition to the sample 9.
  • the gas gun 11 is connected to a reservoir 14 that stores the source gas.
  • a valve 15 is provided between the gas gun 11 and the reservoir 14. When the valve 15 is opened, the source gas stored in the reservoir 14 is supplied to the gas gun 11. The source gas is supplied from the gas gun 11 to the sample 9.
  • a heater 16 for heating the reservoir 14 is also provided. The source gas can be heated by the heater 16 and supplied to the gas gun 11. Further, when using a raw material gas that liquefies or solidifies unless heated, the flow path between the reservoir 14 and the gas gun 11 and the gas gun 11 are heated so that the temperature is higher than that of the reservoir 14. This is to prevent the source gas from being liquefied or solidified in the gas flow path.
  • the charged particle beam apparatus includes a gas gun 17, a reservoir 18, a valve 19, and a heater 20 as a second gas supply system. Use.
  • the charged particle source 1 When a liquid metal ion source is used as the charged particle source 1, gallium, a gold-silicon alloy or silicon is used as the ion species. Liquid metal is applied to the surface of the emitter needle to form a high electric field around the emitter needle. The liquid metal is ionized by the high electric field and emitted toward the sample 9.
  • a plasma ion source when used as the charged particle source 1, a kind of single gas selected from hydrogen, helium, neon, argon, xenon, oxygen or nitrogen is used as the ion species. Further, it is possible to irradiate a carbon ion beam using an organic compound gas such as methane. Furthermore, it is possible to irradiate a silicon ion beam, an arsenic ion beam, and a boron ion beam, respectively, using a kind of compound gas selected from silane, arsine, or borane.
  • the plasma ion source supplies an ion species gas into the ion source chamber, forms plasma, and emits an ion beam.
  • the compound gas when used as the ion species, it is desirable to dispose the ion species by disposing an E ⁇ B mass separator between the charged particle source 1 and the sample 9. Thereby, it is possible to prevent the sample 9 from being irradiated with unnecessary ion species.
  • a field ionization ion source When a field ionization ion source is used as the charged particle source 1, a single gas selected from hydrogen, helium, neon, and argon is supplied as an ion species to the emitter needle, and a high electric field is formed around the emitter needle. Ion beam is emitted.
  • an electron source is used as the charged particle source 1
  • a high electric field is formed around the emitter needle to emit an electron beam.
  • a silicon compound represented by the following general formula (I) is used as a raw material.
  • Si n X m (I) (Here, n represents an integer of 3 or more, m represents an integer of n, 2n-2, 2n, or 2n + 2, and X represents a hydrogen atom and / or a halogen atom) Silicon is a precursor of a silicon film. The bond between silicon and hydrogen or the bond between silicon and a halogen atom is cleaved by excitation with a charged particle beam to form a silicon and silicon bond, thereby forming a silicon film. As the halogen atom, a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom can be used.
  • silicon hydride compounds having one ring system such as cyclotrisilane, cyclotetrasilane, cyclopentasilane, silylcyclopentasilane, cyclohexasilane, silylcyclohexasilane, cycloheptasilane, and the like Hexachlorocyclotrisilane, trichlorocyclotrisilane, octachlorocyclotetrasilane, tetrachlorocyclotetrasilane, decachlorocyclopentasilane, pentachlorocyclopentasilane, dodeca Chlorcyclohexasilane, hexachlorocyclohexasilane, tetradecachlorocycloheptasilane, heptachlorocycloheptasilane, hexabromocyclotrisilane, tribromocyclocyclo
  • n a silicon hydride compound having a polycyclic system and a silicon compound in which some or all of these hydrogen atoms are partially substituted with SiH 3 groups or halogen atoms can be exemplified.
  • the above raw material is a liquid or solid compound at room temperature.
  • the vapor pressure of the raw material is lower than the vapor pressure of silicon hydride or halide which is a gas at room temperature such as silane used in the semiconductor manufacturing process.
  • the vapor pressure of cyclopentasilane composed of five silicons bonded in a ring and a bond between silicons and a bond between silicon and hydrogen is approximately 133 Pa. Therefore, the interaction between molecules is large and the amount of adsorption on the sample surface is large. This is considered to be caused by an adsorption phenomenon different from Langmuir type adsorption, such as multimolecular adsorption, on the sample surface. As a result, high-speed deposition can be performed.
  • the raw material gas supply will be described. Cyclopentasilane is inserted into the reservoir 14. The valve 15 is opened and the vaporized cyclopentasilane is supplied to the sample 9 through the gas gun 11. The reservoir 14 is heated by the heater 16 to adjust the supply amount of cyclopentasilane. In addition, when a raw material having a high vapor pressure such as trisilane is used, a mass flow controller is installed between the reservoir 14 and the gas gun 11 to adjust the gas supply amount.
  • Cyclopentasilane is used as a raw material for semiconductor film deposition. Cyclopentasilane is inserted into the reservoir 14. The valve 15 is opened and the vaporized cyclopentasilane is supplied to the sample 9 through the gas gun 11. A gallium liquid metal ion source is used as the charged particle source 1. Based on the beam irradiation information output from the control unit 12, the surface of the sample 9 is scanned and irradiated with a gallium ion beam from a gallium liquid metal ion source. Cyclopentasilane is adsorbed on the surface of the sample 9. At this time, the sample 9 is at room temperature.
  • Cyclopentasilane adsorbed on the sample surface is decomposed by the gallium ion beam irradiation, and a semiconductor film is formed in the region irradiated with the gallium ion beam.
  • the film formation rate was 0.41 ⁇ m 3 / nC.
  • Example 1-2 Next, a case where the gallium liquid metal ion source of Example 1-1 is replaced with an electron source will be described.
  • the surface of the sample 9 supplied with cyclopentasilane is scanned and irradiated with an electron beam.
  • the deposition rate is 3.36 ⁇ 10 ⁇ 3 ⁇ m 3 / nC, which is slower than the deposition with a gallium ion beam. This is because electrons have a longer range in the solid than ions, and thus the proportion of electrons contributing to the decomposition of cyclopentasilane required for film formation is small.
  • the deposition film is a film containing ion species of ion beam of about several to 30% in the film.
  • deposition by electron beam irradiation does not include ion species. Therefore, an impurity-free semiconductor film can be formed by electron beam deposition.
  • Example 1-3 a case where the gallium liquid metal ion source of Example 1-1 is replaced with an ion source using a gas such as hydrogen or helium as ion species will be described.
  • Hydrogen or helium is ionized by a field ionization ion source, and an ion beam is emitted to the surface of the sample 9 adsorbed by cyclopentasilane.
  • a semiconductor film containing no metal impurities can be formed.
  • an ion beam of hydrogen or helium has a shorter range in a solid than electrons, it can be formed more efficiently than when an electron beam is used.
  • Example 1-4 Next, the case where the gallium liquid metal ion source of Example 1-1 is replaced with a plasma ion source using one kind of compound gas selected from silane, arsine, or borane as ion species will be described.
  • An ion species gas is supplied into the ion source chamber, plasma is formed, and an ion beam is emitted.
  • the surface of the sample 9 on which cyclopentasilane is adsorbed is irradiated with the emitted ion beam.
  • silane an intrinsic semiconductor film can be formed.
  • arsine an n-type semiconductor film can be formed.
  • borane a p-type semiconductor film can be formed.
  • the content of ionic species in the film depends on the deposition rate. When the deposition rate is high, the content of ionic species in the film is small.
  • the film formation rate can be controlled by the supply amount of the source gas and the irradiation amount of the charged particle beam.
  • the reservoir 14 is heated by the heater 16, the supply amount of the gas raw material is increased, and the amount of ion beam current applied to the sample 9 is reduced, thereby forming a film having a low content in the ion species film. it can.
  • the ionic species are supplied as a deposition source gas from the second gas supply system simultaneously with the cyclopentasilane, Adsorption to the sample surface and irradiation with an ion beam can compensate for the lack of content.
  • Example 1-5 Next, a case where the gallium liquid metal ion source of Example 1-1 is replaced with an ion source using gold as an ion species will be described. Gold is applied to the surface of the emitter needle, a high electric field is formed around the emitter needle, and an ion beam is emitted. The surface of the sample 9 on which cyclopentasilane is adsorbed is irradiated with the emitted ion beam. Accordingly, a highly conductive film containing gold can be formed.
  • Example 1-6 Next, the case where the gallium liquid metal ion source of Example 1-1 is replaced with an ion source using oxygen or nitrogen as ion species will be described.
  • the surface of the sample 9 adsorbed with cyclopentasilane is irradiated with an ion beam using oxygen or nitrogen as ion species. Thereby, a silicon oxide or silicon nitride film is formed.
  • the silicon oxide or silicon nitride film is an insulating film. Further, since the silicon oxide film and the silicon nitride film are transparent films, it is possible to form or repair a transparent structure such as an optical component such as a lens or a nanoimprint mask.
  • oxygen or nitrogen is supplied to the surface of the sample 9 from the second gas supply system.
  • oxygen or nitrogen content of the silicon oxide film or the silicon nitride film can be controlled.
  • Cyclopentasilane vaporized from the gas gun 11 is supplied, and oxygen or nitrogen is supplied from the gas gun 17.
  • a film having a high oxygen or nitrogen content can be formed. It is also possible to connect a reservoir 18 containing nitrogen to the gas gun 11 and supply a mixed gas of cyclopentasilane and nitrogen from the gas gun 11.
  • Example 1-7 Next, the case where an ion source using carbon as an ion species is used as the gallium liquid metal ion source of Example 1-1 will be described. A carbon ion beam is irradiated on the surface of the sample 9 on which cyclopentasilane is adsorbed. Thereby, a silicon carbide film can be formed.
  • the functionality and deposition rate of the deposition film can be controlled by controlling the beam type of the charged particle beam and the supply of the source gas.
  • Example 2 An embodiment in which a charged particle beam is injected into a deposited film will be described.
  • the surface of the sample 9 adsorbed with cyclopentasilane is irradiated with an oxygen or nitrogen ion beam to form a silicon oxide film or a silicon nitride film.
  • the silicon oxide film or the silicon nitride film is irradiated with an oxygen or nitrogen ion beam to perform ion implantation. Thereby, the oxygen or nitrogen concentration in the film can be increased.
  • the p-type semiconductor film or the n-type semiconductor film can be irradiated with a boron, gallium or arsenic ion beam to increase the impurity doping amount.
  • Example 3 An embodiment for improving the crystallinity of the deposited film will be described.
  • a film is formed by irradiating the surface of the sample 9 adsorbed with cyclopentasilane with a charged particle beam.
  • the sample stage 10 on which the formed film is placed is heated. This heats the film and improves the crystallinity of the film.
  • an electron source can be used as the charged particle source 1 to irradiate the formed film with an electron beam having a large amount of current to heat the film.
  • a laser can be used to irradiate the formed film with laser to heat the film.
  • FIG. 2A is a schematic diagram of a cross section of the wafer 21.
  • a TEM sample 23 including a specific observation region is cut out from the wafer 21.
  • the focused ion beam emitted from the gallium ion source is scanned and irradiated to the peripheral region of the TEM sample 23 to form the recess 22.
  • the TEM sample 23 is processed with a focused ion beam to a thickness that allows transmission of the electron beam of the TEM.
  • the processed TEM sample 23 is separated from the wafer 21 and observed with a TEM.
  • FIG. 2B is a schematic view of a cross section of the wafer 21 from which the TEM sample 23 is cut.
  • Gallium ions are implanted into the bottom and side walls of the recess 22 by focused ion beam irradiation.
  • a silicon film 24 is formed in the recess 22 to fill the recess 22.
  • Cyclopentasilane is supplied from the gas gun 11 to the recess 22.
  • the concave portion 22 is irradiated with an electron beam.
  • a silicon film 24 is formed in the recess 22 as shown in FIG. Then, the wafer 21 filled with the silicon film is returned to the semiconductor device manufacturing process.
  • liquid cyclopentasilane to the recess 22 as a means for forming a silicon film.
  • the hole filling process after TEM sample preparation using liquid cyclopentasilane will be described.
  • FIG. 3 is a configuration diagram of a sample processing apparatus using liquid cyclopentasilane. Since cyclopentasilane burns when it reacts with oxygen, the inside of the sample chamber 39 is filled with nitrogen, and oxygen is reduced to 1 ppm or less.
  • the sample processing apparatus includes a head unit 31 having a liquid discharge unit 32, a microscope unit 33, and a UV light irradiation unit 34.
  • the head unit 31 can be moved relative to the sample table 36 by the head driving unit 35.
  • the microscope unit 33 observes the wafer 21, discharges liquid cyclopentasilane from the liquid discharge unit 32 into the recess 22, and irradiates the UV light from the UV light irradiation unit 34.
  • a container 38 in which liquid cyclopentasilane 37 for replenishing liquid cyclopentasilane is added to the liquid discharge unit 32 is provided.
  • the head unit 31 is moved to replenish the liquid ejection unit 32 with the liquid cyclopentasilane 37 in the container 38.
  • the procedure of the hole filling process after TEM sample preparation will be described.
  • the position of the concave portion 22 of the wafer 21 is confirmed by the microscope unit 33.
  • the head unit 31 is moved, and liquid cyclopentasilane is discharged from the liquid discharge unit 32 to the recess 22.
  • the liquid cyclopentasilane discharged from the UV light irradiation unit 34 is irradiated with UV light, and the liquid cyclopentasilane is polymerized to form an amorphous silicon film.
  • the recess 22 can be filled with the amorphous silicon film.
  • the liquid cyclopentasilane to be discharged may be used in a polymer form by irradiation with UV light in advance.
  • FIG. 4 is a configuration diagram of the liquid discharge unit 32.
  • a needle-like member 42 is provided in the glass tube 41. Further, the glass tube 41 contains liquid cyclopentasilane 44.
  • the acicular member 42 is moved up and down along the glass tube 41 by the acicular member driving unit 43. From the state where the needle-like member 42 is above the liquid surface of the liquid cyclopentasilane 44 as shown in FIG. 4A, the needle-like member 42 protrudes from the glass tube 41 as shown in FIG. The needle-like member 42 is moved.
  • the needle-like member 42 to which the liquid cyclopentasilane 44 is adhered protrudes from the glass tube 41, and the needle-like member 42 is brought into contact with the desired location, whereby the liquid cyclopentasilane 44 can be supplied to the desired location.
  • a TEM sample 23 is produced by a charged particle beam apparatus using a liquid metal gallium ion source as the charged particle source 1 and separated from the wafer 21.
  • Cyclopentasilane is supplied from the gas gun 11 to the recess 22 and irradiated with a gallium ion beam to form a silicon film 24.
  • the wafer 21 is moved to the sample processing apparatus, and liquid cyclopentasilane is supplied onto the silicon film 24 from the liquid discharge unit 32.
  • the liquid cyclopentasilane is irradiated with UV light from the UV light irradiation unit 34 to form an amorphous silicon film.
  • the silicon film 24 into which gallium ions have been implanted can be covered with an amorphous silicon film that does not contain metal impurities, and the wafer 21 can be returned to the semiconductor device manufacturing process.
  • Nanoimprinting is a technique for transferring a pattern by pressing a plate having a concavo-convex pattern called a mold against a liquid polymer or the like on a substrate, and subjecting the liquid polymer to composition deformation by heating or light irradiation in that state.
  • a method of forming a pattern by light irradiation is called optical nanoimprint, and the mold is made of a transparent film in order to transmit light. If there is a defect in this mold, it must be corrected.
  • the sample stage 10 is moved so that the beam can be irradiated to the defective part.
  • Cyclopentasilane vaporized from the gas gun 11 and oxygen or water vapor from the gas gun 17 are supplied to the defective portion of the mold.
  • the electron source as the charged particle source 1
  • the electron beam is irradiated to the defect portion.
  • a transparent silicon oxide film can be formed in the defective portion. Since cyclopentasilane does not contain carbon in the molecule, a film with little light absorption can be formed.
  • the defect can be corrected by forming a transparent film in the defect part.
  • FIG. 5 is a schematic diagram of device fabrication.
  • a plasma ion source is used as the charged particle source 1.
  • Arsine is introduced into the plasma ion source, and an arsenic ion beam is emitted to the substrate 51.
  • the substrate 51 is irradiated with an arsenic ion beam and etched to form a recess 52.
  • the arsine inside the plasma ion source is exhausted.
  • diborane is introduced into the plasma ion source. Diborane is converted into plasma by a plasma ion source, and a boron ion beam is emitted. As shown in FIG.
  • cyclopentasilane is supplied from the gas gun 11 to the recess 52 and irradiated with a boron ion beam to form a silicon film containing boron, thereby filling the recess 52.
  • the source and drain regions 53 of the MOS transistor are formed.
  • tungsten hexafluoride is introduced into the plasma ion source. Tungsten hexafluoride is turned into plasma by a plasma ion source and a tungsten ion beam is emitted. Cyclopentasilane is supplied from the gas gun 11 and irradiated with a tungsten ion beam. Thereby, as shown in FIG. 5D, a gate electrode 55 made of a tungsten silicide film can be formed.
  • a MOS transistor can be formed.
  • a semiconductor device can be manufactured without using conventional semiconductor lithography.
  • Example 6-2 Next, in the formation of the source and drain regions 53 of Example 6-1, an example in which the dopant is supplied by the source gas instead of the ion beam will be described.
  • the substrate 51 is irradiated with an arsenic ion beam, etched, and a recess 52 is formed.
  • the arsine inside the plasma ion source is exhausted.
  • argon is introduced into the plasma ion source.
  • Argon is turned into plasma by a plasma ion source and an argon ion beam is emitted. As shown in FIG.
  • a silicon compound gas containing boron is supplied from the gas gun 17 to the recess 52 and irradiated with an argon ion beam to form a silicon film containing boron. Fill 52. As a result, the source and drain regions 53 of the MOS transistor are formed.
  • an element that does not contain a metal such as hydrogen, helium, neon, argon, or xenon may be used as an ion species.
  • an electron beam may be used instead of the ion beam.
  • the silicon compound gas containing boron is a boron hydride compound such as a modified silane compound or diborane with boron.
  • cyclopentasilane from the gas gun 11 to the recess 52 and simultaneously supply a silicon compound gas containing boron from the gas gun 17.
  • the dope amount can be controlled by supplying the source gas from the two gas guns.
  • a silicon film containing phosphorus by forming a recess 52 with a boron ion beam, supplying a silicon compound gas containing phosphorus from the gas gun 17 to the recess 52 and irradiating an argon ion beam. It is.
  • the present invention can be used in the industrial field of semiconductor devices and charged particle beam apparatuses.

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JP6703903B2 (ja) * 2016-06-16 2020-06-03 株式会社日立製作所 微細構造体の加工方法および微細構造体の加工装置
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