JP2012064623A - 記憶素子、メモリ装置 - Google Patents

記憶素子、メモリ装置 Download PDF

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Publication number
JP2012064623A
JP2012064623A JP2010205260A JP2010205260A JP2012064623A JP 2012064623 A JP2012064623 A JP 2012064623A JP 2010205260 A JP2010205260 A JP 2010205260A JP 2010205260 A JP2010205260 A JP 2010205260A JP 2012064623 A JP2012064623 A JP 2012064623A
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JP
Japan
Prior art keywords
layer
magnetization
film
memory
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010205260A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012064623A5 (enExample
Inventor
Hiroyuki Uchida
裕行 内田
Masakatsu Hosomi
政功 細見
Hiroyuki Omori
広之 大森
Kazuhiro Bessho
和宏 別所
Yutaka Higo
豊 肥後
Ichiyo Yamane
一陽 山根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2010205260A priority Critical patent/JP2012064623A/ja
Priority to CN2011102642095A priority patent/CN102403030A/zh
Priority to US13/227,144 priority patent/US8743594B2/en
Publication of JP2012064623A publication Critical patent/JP2012064623A/ja
Publication of JP2012064623A5 publication Critical patent/JP2012064623A5/ja
Priority to US14/278,716 priority patent/US9196333B2/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2010205260A 2010-09-14 2010-09-14 記憶素子、メモリ装置 Pending JP2012064623A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010205260A JP2012064623A (ja) 2010-09-14 2010-09-14 記憶素子、メモリ装置
CN2011102642095A CN102403030A (zh) 2010-09-14 2011-09-07 存储元件和存储装置
US13/227,144 US8743594B2 (en) 2010-09-14 2011-09-07 Memory element and memory device
US14/278,716 US9196333B2 (en) 2010-09-14 2014-05-15 Magnetic memory element and magnetic memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010205260A JP2012064623A (ja) 2010-09-14 2010-09-14 記憶素子、メモリ装置

Publications (2)

Publication Number Publication Date
JP2012064623A true JP2012064623A (ja) 2012-03-29
JP2012064623A5 JP2012064623A5 (enExample) 2013-10-17

Family

ID=45885155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010205260A Pending JP2012064623A (ja) 2010-09-14 2010-09-14 記憶素子、メモリ装置

Country Status (3)

Country Link
US (2) US8743594B2 (enExample)
JP (1) JP2012064623A (enExample)
CN (1) CN102403030A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9627609B2 (en) 2014-12-08 2017-04-18 Samsung Electronics Co., Ltd Method of manufacturing a magnetic memory device

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* Cited by examiner, † Cited by third party
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JP5786341B2 (ja) 2010-09-06 2015-09-30 ソニー株式会社 記憶素子、メモリ装置
JP2012064623A (ja) * 2010-09-14 2012-03-29 Sony Corp 記憶素子、メモリ装置
CN102683580B (zh) * 2011-03-18 2016-05-25 三星电子株式会社 磁隧道结器件、电子系统以及存储系统及其制造方法
US9105572B2 (en) * 2013-09-09 2015-08-11 Hiroyuki Kanaya Magnetic memory and manufacturing method thereof
US10043852B2 (en) * 2015-08-11 2018-08-07 Toshiba Memory Corporation Magnetoresistive memory device and manufacturing method of the same
WO2017212895A1 (ja) 2016-06-08 2017-12-14 国立大学法人東北大学 磁気トンネル接合素子および磁気メモリ
CN109314181B (zh) * 2016-06-20 2022-09-30 国立大学法人东北大学 隧道磁阻元件及其制备方法
CN108008326B (zh) * 2016-10-31 2020-11-24 南京大学 一种调控mram材料阻尼因子的方法
US10381403B1 (en) * 2018-06-21 2019-08-13 Globalfoundries Singapore Pte. Ltd. MRAM device with improved seal ring and method for producing the same
WO2020045655A1 (ja) 2018-08-30 2020-03-05 国立大学法人東北大学 磁気抵抗効果素子、磁気メモリ、及び、該磁気抵抗効果素子の成膜方法
EP4123056B1 (en) 2021-07-20 2024-01-17 Topsoe A/S Method for transient operation of a solid oxide electrolysis cell stack

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JP2003304010A (ja) * 2002-04-09 2003-10-24 Sony Corp 磁気抵抗効果素子及び磁気メモリ装置
JP2008186861A (ja) * 2007-01-26 2008-08-14 Toshiba Corp 磁気抵抗素子および磁気メモリ
JP2008227388A (ja) * 2007-03-15 2008-09-25 Sony Corp 記憶素子及びメモリ
JP2011258596A (ja) * 2010-06-04 2011-12-22 Hitachi Ltd 磁気抵抗効果素子及び磁気メモリ

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US6130814A (en) 1998-07-28 2000-10-10 International Business Machines Corporation Current-induced magnetic switching device and memory including the same
JP2003017782A (ja) 2001-07-04 2003-01-17 Rikogaku Shinkokai キャリヤスピン注入磁化反転型磁気抵抗効果膜と該膜を用いた不揮発性メモリー素子及び該素子を用いたメモリー装置
US7242045B2 (en) 2004-02-19 2007-07-10 Grandis, Inc. Spin transfer magnetic element having low saturation magnetization free layers
JP5040105B2 (ja) * 2005-12-01 2012-10-03 ソニー株式会社 記憶素子、メモリ
JP2007305882A (ja) * 2006-05-12 2007-11-22 Sony Corp 記憶素子及びメモリ
JP2008160031A (ja) * 2006-12-26 2008-07-10 Sony Corp 記憶素子及びメモリ
JP4380707B2 (ja) * 2007-01-19 2009-12-09 ソニー株式会社 記憶素子
JP5104090B2 (ja) * 2007-07-19 2012-12-19 ソニー株式会社 記憶素子及びメモリ
JP2009081315A (ja) * 2007-09-26 2009-04-16 Toshiba Corp 磁気抵抗素子及び磁気メモリ
JP2012054439A (ja) * 2010-09-02 2012-03-15 Sony Corp 記憶素子及び記憶装置
JP5786341B2 (ja) * 2010-09-06 2015-09-30 ソニー株式会社 記憶素子、メモリ装置
JP2012059808A (ja) * 2010-09-07 2012-03-22 Sony Corp 記憶素子、メモリ装置
JP2012059878A (ja) * 2010-09-08 2012-03-22 Sony Corp 記憶素子、メモリ装置
JP5742142B2 (ja) * 2010-09-08 2015-07-01 ソニー株式会社 記憶素子、メモリ装置
JP2012059906A (ja) * 2010-09-09 2012-03-22 Sony Corp 記憶素子、メモリ装置
JP5803079B2 (ja) * 2010-09-13 2015-11-04 ソニー株式会社 記憶素子、メモリ装置
JP5724256B2 (ja) * 2010-09-14 2015-05-27 ソニー株式会社 記憶素子、メモリ装置
JP5740878B2 (ja) * 2010-09-14 2015-07-01 ソニー株式会社 記憶素子、メモリ装置
JP2012064623A (ja) * 2010-09-14 2012-03-29 Sony Corp 記憶素子、メモリ装置
JP2012160681A (ja) * 2011-02-03 2012-08-23 Sony Corp 記憶素子、メモリ装置
JP5867030B2 (ja) * 2011-12-01 2016-02-24 ソニー株式会社 記憶素子、記憶装置
JP2013115399A (ja) * 2011-12-01 2013-06-10 Sony Corp 記憶素子、記憶装置
JP2013115412A (ja) * 2011-12-01 2013-06-10 Sony Corp 記憶素子、記憶装置
JP2013115400A (ja) * 2011-12-01 2013-06-10 Sony Corp 記憶素子、記憶装置
JP2013115413A (ja) * 2011-12-01 2013-06-10 Sony Corp 記憶素子、記憶装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003304010A (ja) * 2002-04-09 2003-10-24 Sony Corp 磁気抵抗効果素子及び磁気メモリ装置
JP2008186861A (ja) * 2007-01-26 2008-08-14 Toshiba Corp 磁気抵抗素子および磁気メモリ
JP2008227388A (ja) * 2007-03-15 2008-09-25 Sony Corp 記憶素子及びメモリ
JP2011258596A (ja) * 2010-06-04 2011-12-22 Hitachi Ltd 磁気抵抗効果素子及び磁気メモリ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9627609B2 (en) 2014-12-08 2017-04-18 Samsung Electronics Co., Ltd Method of manufacturing a magnetic memory device

Also Published As

Publication number Publication date
US9196333B2 (en) 2015-11-24
CN102403030A (zh) 2012-04-04
US20120063222A1 (en) 2012-03-15
US20140254253A1 (en) 2014-09-11
US8743594B2 (en) 2014-06-03

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