JP2012033720A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2012033720A JP2012033720A JP2010172171A JP2010172171A JP2012033720A JP 2012033720 A JP2012033720 A JP 2012033720A JP 2010172171 A JP2010172171 A JP 2010172171A JP 2010172171 A JP2010172171 A JP 2010172171A JP 2012033720 A JP2012033720 A JP 2012033720A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 90
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 99
- 239000002184 metal Substances 0.000 claims abstract description 99
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 238000005530 etching Methods 0.000 claims abstract description 24
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 10
- 238000007747 plating Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 34
- 239000011347 resin Substances 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 12
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 description 51
- 230000000052 comparative effect Effects 0.000 description 9
- 239000012790 adhesive layer Substances 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 239000010931 gold Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 239000011651 chromium Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【解決手段】この製造方法は、支持基板10の表面10aに貼付された半導体ウェハ12上にネガレジストを塗布し、該ネガレジストを露光することにより所定のパターンを有するレジスト18を形成するレジスト形成工程と、半導体ウェハ12上にメッキ処理を施すことにより金属マスク20を形成したのちレジスト18を除去する金属マスク形成工程と、金属マスク20を介して半導体ウェハ12にエッチングを施すことにより、貫通孔12dを形成するエッチング工程と、金属マスク20を除去したのち、貫通孔12dの内面及び半導体ウェハ12の裏面12bに金属膜26を形成する金属膜形成工程と、半導体ウェハ12を支持基板10から取り外す取外し工程とを含む。
【選択図】図1
Description
Claims (5)
- 支持基板の表面に貼付された板状の加工対象物上にネガレジストを塗布し、該ネガレジストを露光することにより所定のパターンを有するレジストを形成するレジスト形成工程と、
前記加工対象物上にメッキ処理を施すことにより金属マスクを形成したのち前記レジストを除去する金属マスク形成工程と、
前記金属マスクを介して前記加工対象物にエッチングを施すことにより、貫通孔を形成するエッチング工程と、
前記金属マスクを除去したのち、前記貫通孔の内面及び前記加工対象物の表面に金属膜を形成する金属膜形成工程と、
前記加工対象物を前記支持基板から取り外す取外し工程と
を備えることを特徴とする、半導体装置の製造方法。 - 前記加工対象物が樹脂系接着剤を介して前記支持基板に貼付されており、
前記取外し工程の際に、前記樹脂系接着剤を軟化させて前記加工対象物を前記支持基板からスライドさせて取り外すことを特徴とする、請求項1に記載の半導体装置の製造方法。 - 前記加工対象物がSi、SiC、サファイア、石英およびGaNのいずれかから成ることを特徴とする、請求項1または2に記載の半導体装置の製造方法。
- 前記金属マスクがNi、Cr及びCuのうち少なくとも一つを含むことを特徴とする、請求項1〜3のいずれか一項に記載の半導体装置の製造方法。
- 前記支持基板がガラス製であることを特徴とする、請求項1〜4のいずれか一項に記載の半導体装置の製造方法。
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JP2010172171A JP5589243B2 (ja) | 2010-07-30 | 2010-07-30 | 半導体装置の製造方法 |
US13/188,569 US8563433B2 (en) | 2010-07-30 | 2011-07-22 | Process to form via hole in semiconductor wafer |
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JP2010172171A JP5589243B2 (ja) | 2010-07-30 | 2010-07-30 | 半導体装置の製造方法 |
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JP2012033720A true JP2012033720A (ja) | 2012-02-16 |
JP5589243B2 JP5589243B2 (ja) | 2014-09-17 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109103276A (zh) * | 2014-03-28 | 2018-12-28 | 太阳能公司 | 具有通过金属化结构耦接的多个子电池的太阳能电池 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101878754B1 (ko) | 2012-09-13 | 2018-07-17 | 삼성전자주식회사 | 대면적 갈륨 나이트라이드 기판 제조방법 |
US20150099358A1 (en) * | 2013-10-07 | 2015-04-09 | Win Semiconductors Corp. | Method for forming through wafer vias in semiconductor devices |
TWI584387B (zh) * | 2014-08-15 | 2017-05-21 | 矽品精密工業股份有限公司 | 封裝結構之製法 |
JP2019145546A (ja) | 2018-02-16 | 2019-08-29 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
CN110767604B (zh) * | 2019-10-31 | 2022-03-18 | 厦门市三安集成电路有限公司 | 化合物半导体器件和化合物半导体器件的背面铜制程方法 |
CN117337049A (zh) * | 2020-06-16 | 2024-01-02 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04249321A (ja) * | 1991-02-05 | 1992-09-04 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2002043424A (ja) * | 2000-07-24 | 2002-02-08 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP2002223036A (ja) * | 2001-01-24 | 2002-08-09 | Sharp Corp | 半導体レーザ素子及びその製造方法 |
JP2004158865A (ja) * | 2001-05-30 | 2004-06-03 | Sharp Corp | 半導体装置の製造方法 |
JP2006237056A (ja) * | 2005-02-22 | 2006-09-07 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2008098456A (ja) * | 2006-10-13 | 2008-04-24 | Eudyna Devices Inc | 半導体装置の製造方法 |
JP2008140861A (ja) * | 2006-11-30 | 2008-06-19 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
JP2009181981A (ja) * | 2008-01-29 | 2009-08-13 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
JP2010109007A (ja) * | 2008-10-28 | 2010-05-13 | Fujitsu Ltd | 半導体装置の製造方法 |
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US7109118B2 (en) * | 2003-05-07 | 2006-09-19 | Microfabrica Inc. | Electrochemical fabrication methods including use of surface treatments to reduce overplating and/or planarization during formation of multi-layer three-dimensional structures |
KR100823847B1 (ko) * | 2006-12-20 | 2008-04-21 | 동부일렉트로닉스 주식회사 | 반도체 소자의 패턴 형성방법 |
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Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04249321A (ja) * | 1991-02-05 | 1992-09-04 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2002043424A (ja) * | 2000-07-24 | 2002-02-08 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP2002223036A (ja) * | 2001-01-24 | 2002-08-09 | Sharp Corp | 半導体レーザ素子及びその製造方法 |
JP2004158865A (ja) * | 2001-05-30 | 2004-06-03 | Sharp Corp | 半導体装置の製造方法 |
JP2006237056A (ja) * | 2005-02-22 | 2006-09-07 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2008098456A (ja) * | 2006-10-13 | 2008-04-24 | Eudyna Devices Inc | 半導体装置の製造方法 |
JP2008140861A (ja) * | 2006-11-30 | 2008-06-19 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
JP2009181981A (ja) * | 2008-01-29 | 2009-08-13 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
JP2010109007A (ja) * | 2008-10-28 | 2010-05-13 | Fujitsu Ltd | 半導体装置の製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109103276A (zh) * | 2014-03-28 | 2018-12-28 | 太阳能公司 | 具有通过金属化结构耦接的多个子电池的太阳能电池 |
US11398576B2 (en) | 2014-03-28 | 2022-07-26 | Sunpower Corporation | Solar cell having a plurality of sub-cells coupled by a metallization structure |
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US20120028465A1 (en) | 2012-02-02 |
JP5589243B2 (ja) | 2014-09-17 |
US8563433B2 (en) | 2013-10-22 |
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