WO2005106931A1 - 形状転写方法 - Google Patents
形状転写方法 Download PDFInfo
- Publication number
- WO2005106931A1 WO2005106931A1 PCT/JP2005/007709 JP2005007709W WO2005106931A1 WO 2005106931 A1 WO2005106931 A1 WO 2005106931A1 JP 2005007709 W JP2005007709 W JP 2005007709W WO 2005106931 A1 WO2005106931 A1 WO 2005106931A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- release layer
- shape
- transfer method
- layer
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
- H01J9/241—Manufacture or joining of vessels, leading-in conductors or bases the vessel being for a flat panel display
- H01J9/242—Spacers between faceplate and backplate
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
Definitions
- the present invention relates to a shape transfer method.
- Nanoimprinting is a method of transferring irregularities to a substrate using a mold having fine irregularities.
- FIG. 10 is a diagram illustrating a shape transfer method using nanoimprint.
- a mold 140 which is a mold on which an uneven pattern is formed, is prepared, and the uneven surface of the mold 140 is pressed against the resist film 120 to deform the resist film 120 (see (B)). After pressing the mold 140 against the resist film 120, the mold 140 is separated from the resist film 120 (see (C)). As a result, the uneven shape of the mold 140 is transferred to the resist film 120.
- the resist residue 125 in the region compressed by the mold 140 is removed by dry etching to expose the surface of the substrate 110 in that portion (see (D)).
- a metal film 130 such as Ni is deposited on the substrate 110 (see (E)).
- the resist film 120 is removed with an organic solvent (see (F)). As a result, only the metal film 130 directly deposited on the substrate 110 remains on the substrate 110.
- the surface of the substrate 110 is etched to a predetermined depth using an appropriate etching method (see (G)). After the etching, the metal film 130 is removed to obtain the substrate 110 on which the irregular shape of the mold 140 has been transferred (see (H)).
- Non-Patent Document 1 Spectroscopic Research Volume 51 No. 4 (2002)
- the shape cannot be maintained even if mold transfer is performed before pre-betaing the resist.
- pre-beta while transferring the mold material is limited to a material capable of withstanding beta, and furthermore, high-precision shape transfer cannot be performed due to thermal deformation.
- the transfer is performed after the pre-beta, the resist becomes hard by the pre-beta, and it is difficult to transfer the mold.
- the present invention has been made in view of such circumstances, and an object thereof is to provide a shape transfer method capable of reliably removing resin on a substrate.
- a first step of transferring a desired shape to a resin layer formed on a substrate via a release layer and after this step, the first layer is transferred to the resin layer.
- a second step of transferring the shape to the substrate and exposing a part of the release layer and after this step, a third step of dissolving and removing the release layer between the substrate and the resin layer. It is characterized by including.
- the first step is a step of forming a release layer on the substrate, a step of forming a resin layer on the release layer after this step, and a step of transferring a desired shape after this step.
- the method may include a step of pressing the mold against the resin layer, and a step of separating the mold and the resin layer after this step.
- the release layer is formed of any one of WO, A1 and A10, and has a thickness of lOnm
- the distance between the exposed portions of the release layer in the release layer extending direction is larger than 0 and 5 mm. It is preferable to set the following.
- the distance between the exposed portions of the release layer in the release layer extending direction is greater than 0 and 1 mm or less. It would be even better.
- FIG. 1 is a diagram illustrating a shape transfer method according to an embodiment of the present invention.
- FIG. 2 is a perspective view showing a first example of a concavo-convex shape transferred to a substrate.
- FIG. 3 is an enlarged view of a part A1 in FIG.
- FIG. 4 is a perspective view showing a second example of the concavo-convex shape transferred to the substrate.
- FIG. 5 is an enlarged view of A2 part in FIG. 4.
- FIG. 6 is a perspective view showing a third example of the concavo-convex shape transferred to the substrate.
- FIG. 7 is an enlarged view of A3 part in FIG. 6.
- FIG. 8 is a perspective view showing a fourth example of the uneven shape.
- FIG. 9 is an enlarged view of A4 part in FIG. 8.
- FIG. 10 is a diagram illustrating a shape transfer method by nanoimprint.
- FIG. 1 is a diagram illustrating a shape transfer method according to an embodiment of the present invention.
- the shape transfer method according to the present embodiment includes first to third steps.
- the first step includes three more steps as shown in FIGS. 1A, 1B, and 1C.
- (D) and (E) in FIG. 1 correspond to the second step and the third step, respectively.
- the substrate 10 on which the transfer is performed is formed of quartz glass.
- the shape of the substrate 10 to which the present invention can be applied is arbitrary.
- the surface of the substrate 10 represents the center average roughness
- Ra is ground to 0.2 m.
- a resin layer 30 is formed on a surface of a substrate 10 to be transferred via a release layer 20.
- a 0. S / z n ⁇ WO film having a film thickness of 0.
- the release layer 20 is made of WO l O
- the peeling layer 20 is provided to reliably remove the resin layer 30 described later, and the thickness of the peeling layer 20 is preferably 10 nm to: m. If the thickness of the release layer 20 is too thin, the release of the resin layer 30 becomes difficult. On the other hand, if the release layer 20 is too thick, A lot of time is needed for training.
- a resin layer 30 is formed on the release layer 20.
- a thermosetting resin, a thermoplastic resin, or a UV-curable resin can be used as the resin used for the resin layer 30.
- UV-curable resin When UV-curable resin is used, throughput can be improved and dimensional change due to thermal deformation can be prevented as compared with the case where thermosetting resin / thermoplastic resin is used.
- the mold 40 for example, heat-resistant glass having heat resistance and mechanical strength can be used. On the surface of the mold 40, an uneven shape to be transferred to the substrate 10 is formed.
- UV light is applied from the back side of the substrate 10 at the same time that the mold 40 is pressed.
- the mold 40 is a material that transmits UV light
- UV light may be irradiated from the mold 40 side. In that case, an opaque material other than glass can be used for the substrate 10.
- the resin residue 30 a shown in FIG. 1D is the resin layer 30 in a region compressed by the convex part of the mold 40.
- the resin residue 30a and the surface portion of the substrate 10 located thereunder are removed by dry etching using an SF-based gas. At this time, the substrate 10
- the uneven shape of the mold 40 is transferred to the substrate 10.
- the release layer 20 is immersed in an alkaline solution (10% NaOH aqueous solution) for 5 minutes. Since the side surface of the release layer 20 below the resin layer 30 is exposed by etching, the exposed partial force of the release layer 20 is also dissolved, and the resin layer 30 remaining on the substrate 10 is separated from the substrate 10. I do.
- an alkaline solution (10% NaOH aqueous solution) for 5 minutes. Since the side surface of the release layer 20 below the resin layer 30 is exposed by etching, the exposed partial force of the release layer 20 is also dissolved, and the resin layer 30 remaining on the substrate 10 is separated from the substrate 10. I do.
- the release layer 20 When the release layer 20 is dissolved, there is almost no damage to the substrate 10, so that the surface of the substrate 10 maintains the same surface roughness as before the processing. Instead of immersing the release layer 20 in the alkaline solution, the alkaline solution is sprayed on the release layer 20 by spin cleaning. The release layer 20 may be dissolved. Through the steps (A) to (E) as described above, the substrate 10 to which the irregular shape of the mold 40 is transferred as shown in FIG. 1 (F) is obtained.
- FIGS. 2 and 3 are diagrams showing a first example of the uneven shape
- FIG. 2 is a perspective view of the substrate 10
- FIG. 3 is an enlarged view of an A1 part in FIG.
- FIGS. 2 and 3 show the state after the step of FIG. 1D is completed, that is, the surface state of the substrate 10 after the etching.
- a plurality of rectangular parallelepiped projections 11 are regularly transferred to the substrate 10 by dry etching.
- Each of the protrusions 11 has a separation portion 20a formed by dividing the separation layer 20 by dry etching. Therefore, the side surface of the peeled portion 20a is exposed to the outside.
- the width S 1 of the divided convex portion 11 in the short direction should be 5 mm or less. It is better to do.
- a more preferable dimension S1 is 1 mm or less.
- the time required for the peeled portion 20a to completely dissolve is equal to the width of the peeled portion 20a having the same width as the width S1 in the short direction. It corresponds to the dissolution time.
- the dimension S1 is the same as the interval between the exposed portions of the stripped portion 20a in the short direction, and if this interval is short, it is necessary to dissolve the stripped portion 20a between the resin layer 30 of the projection 11 and the substrate 10. Solution easily penetrates.
- the interval for ensuring the dissolution of the peeled portion 20a has been found by experiments by the inventors of the present invention.
- FIG. 4 is a perspective view showing a second example of the concavo-convex shape
- FIG. 5 is an enlarged view of a portion A2 in FIG. 4 and 5 also show the state after the step of FIG. 1D is completed, that is, the surface state of the substrate 10 after the etching.
- a plurality of columnar projections 12 are formed on the substrate 10 by dry etching.
- the peeled portion 20a is formed so as to be sandwiched between the resin layer 30 and the substrate 10, and the side surface of the peeled portion 20a is exposed to the outside. Is out.
- the diameter S2 of the divided convex portion 12 be 5 mm or less.
- a more preferable dimension S2 is 1 mm or less. This dimension is also a value found by experiments by the inventors of the present invention, as in the above description.
- FIG. 6 is a perspective view showing a third example of the concavo-convex shape
- FIG. 7 is an enlarged view of a portion A3 in FIG.
- FIG. 7 also shows a cross section of the recess 15.
- 6 and 7 also show the state after the step of FIG. 1D is completed, that is, the surface state of the substrate 10 after the etching.
- a plurality of rectangular concave portions 15 are formed on the substrate 10, and they are arranged in a lattice. In the recess 15, a part of the peeling part 20 a formed by etching the peeling layer 20 is exposed.
- the resin layer 30 can be peeled from the substrate 10 by dissolving the peeling portion 20a sandwiched between the resin layer 30 and the substrate 10 with an alkaline solution.
- FIG. 8 is a perspective view showing a fourth example of the concavo-convex shape
- FIG. 9 is an enlarged view of an A4 part in FIG.
- FIG. 9 also shows a cross section of the recess 16. 8 and 9 also show the state after the step of FIG. 1D is completed, that is, the surface state of the substrate 10 after the etching.
- a plurality of concave portions 16 having a circular cross section are formed on the substrate 10, and they are regularly arranged in the vertical and horizontal directions. In recess 16, a part (side surface) of peeled portion 20 a formed by etching peeling layer 20 is exposed. In the case of the fourth example, in order to surely dissolve the peeling portion 20a with the alkaline solution, a plurality of recesses 16 adjacent to each other are required.
- the maximum spacing dimension S4 should be at most 5 mm. A more preferable dimension S4 is 1 mm or less. This dimension is also a value found by experiments by the inventors of the present invention, as in the above description.
- the peeled layer 20 after the etching can be reliably dissolved in the alkaline solution, and therefore, the resin layer 30 can be reliably removed by applying a force on the substrate 10.
- a force on the substrate 10. Can be.
- the pressing force of the mold 40 when the resin layer 30 is deformed can be further reduced, so that the structure of the apparatus can be simplified and the manufacturing cost can be reduced. be able to. Further, since residues such as carbides do not remain as in the case of removing resin by asking, it is effective for shape transfer to a large-area substrate used for a display or the like.
- the equipment cost may be any as long as it is a release layer dissolving tank that can accommodate the substrate 10, so that the cost can be reduced.
- the above-mentioned shape may be obtained by using a mold 40 and a force using dry etching to obtain the above-mentioned shape, for example, a mechanical tool (processing using a dicing saw or the like).
- the present shape transfer method can be applied to shapes other than the illustrated shapes.
- the shape transfer method described above can also be used in the following manufacturing method.
- the present invention can be applied to a method of manufacturing an insulating substrate used for insulation between field emission portions used in a field emission display device. For example, by using this shape transfer method to form through holes at the same pitch as the field emission portion, an insulating substrate can be obtained. The obtained insulating substrate is used by arranging it so that a through hole passes through the field emission portion.
- the present invention can be applied as a method for manufacturing an optical element, particularly, a diffractive optical element.
- a diffractive optical element can be manufactured by setting a predetermined pitch for the wavelength to be used, forming the periodic structure into a resin layer, and transferring the periodic structure to a substrate on which the optical element is formed.
- the present shape transfer method is a useful method for forming a fine structure in a substrate.
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
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- Shaping Of Tube Ends By Bending Or Straightening (AREA)
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Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/580,955 US7670747B2 (en) | 2004-04-28 | 2006-10-16 | Pattern transfer method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004133840A JP2005313278A (ja) | 2004-04-28 | 2004-04-28 | 形状転写方法 |
JP2004-133840 | 2004-04-28 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/580,955 Continuation US7670747B2 (en) | 2004-04-28 | 2006-10-16 | Pattern transfer method |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005106931A1 true WO2005106931A1 (ja) | 2005-11-10 |
Family
ID=35241922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/007709 WO2005106931A1 (ja) | 2004-04-28 | 2005-04-22 | 形状転写方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7670747B2 (ja) |
JP (1) | JP2005313278A (ja) |
CN (1) | CN100456422C (ja) |
WO (1) | WO2005106931A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7419611B2 (en) * | 2005-09-02 | 2008-09-02 | International Business Machines Corporation | Processes and materials for step and flash imprint lithography |
JP5205113B2 (ja) * | 2008-04-08 | 2013-06-05 | 浜松ホトニクス株式会社 | グレーティング素子及びその製造方法 |
CN102301463B (zh) * | 2008-12-05 | 2015-12-02 | 流体科技公司 | 产生有图案的材料的方法 |
JP2010146668A (ja) * | 2008-12-19 | 2010-07-01 | Hitachi Ltd | パターンドメディアの作製方法 |
WO2013184219A1 (en) * | 2012-03-30 | 2013-12-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for patterning samples |
KR20180038609A (ko) * | 2016-10-06 | 2018-04-17 | 삼성디스플레이 주식회사 | 강화 글라스의 제조 방법, 이를 통해 제조된 강화 글라스 및 강화 글라스를 포함하는 전자 기기 |
CN108828703B (zh) * | 2018-08-27 | 2020-09-01 | 宜兴市晶科光学仪器有限公司 | 一种平面衍射光栅的复制方法 |
DE102019101346A1 (de) * | 2019-01-18 | 2020-07-23 | Osram Opto Semiconductors Gmbh | Nanostempelverfahren und nanooptisches bauteil |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001052994A (ja) * | 1999-08-17 | 2001-02-23 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
JP2001052979A (ja) * | 1999-08-05 | 2001-02-23 | Sony Corp | レジストの形成方法及び基体の加工方法、並びにフィルター構造 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05275327A (ja) * | 1992-03-30 | 1993-10-22 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2000039702A (ja) * | 1998-04-30 | 2000-02-08 | Ebara Corp | 微細パタ―ンの転写加工方法 |
JP4496631B2 (ja) * | 2000-09-27 | 2010-07-07 | 富士通株式会社 | 電子デバイスの製造方法 |
FR2849221B1 (fr) * | 2002-12-23 | 2005-10-07 | Commissariat Energie Atomique | Procede de lithographie par pressage d'un substrat mettant en oeuvre une nano-impression |
US7363854B2 (en) * | 2004-12-16 | 2008-04-29 | Asml Holding N.V. | System and method for patterning both sides of a substrate utilizing imprint lithography |
US7354698B2 (en) * | 2005-01-07 | 2008-04-08 | Asml Netherlands B.V. | Imprint lithography |
US7419611B2 (en) * | 2005-09-02 | 2008-09-02 | International Business Machines Corporation | Processes and materials for step and flash imprint lithography |
US20070298176A1 (en) * | 2006-06-26 | 2007-12-27 | Dipietro Richard Anthony | Aromatic vinyl ether based reverse-tone step and flash imprint lithography |
US7749422B2 (en) * | 2007-03-30 | 2010-07-06 | International Business Machines Corporation | Release layer for imprinted photocationic curable resins |
US20090041986A1 (en) * | 2007-06-21 | 2009-02-12 | 3M Innovative Properties Company | Method of making hierarchical articles |
-
2004
- 2004-04-28 JP JP2004133840A patent/JP2005313278A/ja active Pending
-
2005
- 2005-04-22 CN CNB2005800131948A patent/CN100456422C/zh not_active Expired - Fee Related
- 2005-04-22 WO PCT/JP2005/007709 patent/WO2005106931A1/ja active Application Filing
-
2006
- 2006-10-16 US US11/580,955 patent/US7670747B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001052979A (ja) * | 1999-08-05 | 2001-02-23 | Sony Corp | レジストの形成方法及び基体の加工方法、並びにフィルター構造 |
JP2001052994A (ja) * | 1999-08-17 | 2001-02-23 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
Non-Patent Citations (1)
Title |
---|
NAKAMURA H. ET AL: "Imprint Lithography Using Triple-Layer-Resist and Its Application to Metal-Oxide-Silicon Field-Effect-Transisor Fabrication.", JAPANESE JOURNAL OF APPLIED PHYSICS., vol. 39, no. 12B, 30 December 2000 (2000-12-30), pages 7080 - 7085, XP002994533 * |
Also Published As
Publication number | Publication date |
---|---|
JP2005313278A (ja) | 2005-11-10 |
US20070029686A1 (en) | 2007-02-08 |
CN1947225A (zh) | 2007-04-11 |
CN100456422C (zh) | 2009-01-28 |
US7670747B2 (en) | 2010-03-02 |
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