JP2012015242A - ワイヤボンディング方法、ワイヤボンディング構造、半導体装置の製造方法 - Google Patents
ワイヤボンディング方法、ワイヤボンディング構造、半導体装置の製造方法 Download PDFInfo
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Abstract
【解決手段】4はCuワイヤ、5は溶融したAu、6はキャピラリ、7は加熱るつぼ、8はFAB(Free Air Ball)である。キャピラリ6先端から0.5mmだけCuワイヤ(直径25μm)を突出させ、1100℃に加熱された加熱るつぼの中の液体化したAuに、Cuワイヤの先端を50μmだけ、0.2s浸漬する。先端部に直径50μmのFAB8が形成され、これを用いて半導体装置(不図示)の電極パッド(不図示)へワイヤボンドを行う。ワイヤ先端がワイヤよりも低融点かつ低硬度の導電性材料で被覆されていることで、当該ワイヤ先端をパッドにボンディングするとき低ストレスなワイヤボンドが可能となる。
【選択図】図1
Description
また、特開平11−054541号公報には、Cuワイヤ先端にAuボールを形成する手法が提案されている。しかしながら、当該公報に係る技術においては、放電によって瞬間的に高温雰囲気を形成しているため、Auを溶融させてボールを形成する際にAu中にCuが拡散して合金化してしまう。Cuの拡散により合金化した材料の物性は、Auのみで形成した場合に期待される物性とは異なる。その結果、上記公報にかかる技術によっては、ワイヤ先端に被覆させた材料に本来期待されるボンディング性を享受することができない。
FAB未形成のワイヤの先端を前記ワイヤの材料よりも低融点かつ低硬度の導電性材料を溶融させた溶融体に浸漬することにより、前記ワイヤの前記先端に前記導電性材料のFABを形成する工程と、
前記ワイヤの前記先端に形成された前記FABを、半導体装置のパッドにボンディングする工程と、
を備えることを特徴とする。
パッドを有する半導体装置を準備する工程と、
上記第1の発明にかかるワイヤボンディング方法で前記半導体装置の前記パッドにワイヤボンディングを実施する工程と、
を備えることを特徴とする。
縞状のスリットを有するパッドと、
前記スリットに交差する方向への超音波印加を伴って前記パッドの表面にワイヤボンディングされたワイヤと、
を備えることを特徴とする。
縞状のスリットが形成されたパッドを有する半導体装置を準備する工程と、
前記スリットに交差する方向への超音波印加を伴って、前記パッドの表面にワイヤボンディングを行う工程と、
を備えることを特徴とする。
図1は、本発明の実施の形態1にかかるワイヤボンディング方法の工程を示す模式図である。図中の4はCuワイヤ、5は溶融したAu、6はキャピラリ、7は加熱るつぼ、8はFAB(Free Air Ball)である。なお、本実施形態においては、Auの融点は1064℃であり、Cuの融点は1084℃であるものとする。
図2は、本発明の実施の形態2にかかるワイヤボンディング構造を説明するための模式図である。図中の各符号は、9が半導体チップを、10が配線層を、11がAuで形成したパッドを、12が絶縁層を、13がフォトリソグラフィマスクを、14、15がスリットをそれぞれ指している。スリット14、15は、図2の紙面奥行方向に並列に延びている。
5 溶融したAu
6 キャピラリ
7 加熱るつぼ
8 FAB(Free Air Ball)
9 半導体チップ
10 配線層
11 パッド
12 絶縁層
13 フォトリソグラフィマスク
14、15 スリット
101 ワイヤ
102 チップの電極部(パッド)
103 クラック状の変形
109 半導体チップ
110 配線層
112 絶縁層
Claims (8)
- FAB(Free Air Ball)未形成のワイヤの先端を前記ワイヤの材料よりも低融点かつ低硬度の導電性材料を溶融させた溶融体に浸漬することにより、前記ワイヤの前記先端に前記導電性材料のFABを形成する工程と、
前記ワイヤの前記先端に形成された前記FABを、半導体装置のパッドにボンディングする工程と、
を備えることを特徴とするワイヤボンディング方法。 - 前記導電性材料は、前記ワイヤの材料の融点よりも100℃以上低い融点を有することを特徴とする請求項1に記載のワイヤボンディング方法。
- 前記導電性材料は、前記ワイヤの材料の融点よりも500℃以上低い融点を有することを特徴とする請求項1に記載のワイヤボンディング方法。
- 前記ワイヤの材料がCuであり、前記導電性材料がAuであることを特徴とする請求項1に記載のワイヤボンディング方法。
- パッドを有する半導体装置を準備する工程と、
請求項1乃至4のいずれか1項にかかるワイヤボンディング方法で前記半導体装置の前記パッドにワイヤボンディングを実施する工程と、
を備えることを特徴とする半導体装置の製造方法。 - 縞状のスリットを有するパッドと、
前記スリットに交差する方向への超音波印加を伴って前記パッドの前記表面にワイヤボンディングされたワイヤと、
を備えることを特徴とするワイヤボンディング構造。 - 前記パッドの下層に設けられた縞状の絶縁層を更に有することを特徴とする請求項6に記載のワイヤボンディング構造。
- 縞状のスリットが形成されたパッドを有する半導体装置を準備する工程と、
前記スリットに交差する方向への超音波印加を伴って、前記パッドの前記表面にワイヤボンディングを行う工程と、
を備えることを特徴とする半導体装置の製造方法。
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