JP2012009848A5 - - Google Patents

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Publication number
JP2012009848A5
JP2012009848A5 JP2011114721A JP2011114721A JP2012009848A5 JP 2012009848 A5 JP2012009848 A5 JP 2012009848A5 JP 2011114721 A JP2011114721 A JP 2011114721A JP 2011114721 A JP2011114721 A JP 2011114721A JP 2012009848 A5 JP2012009848 A5 JP 2012009848A5
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JP
Japan
Prior art keywords
layer
bump electrode
light emitting
metal layer
semiconductor
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JP2011114721A
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English (en)
Japanese (ja)
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JP2012009848A (ja
JP5693375B2 (ja
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Priority to JP2011114721A priority Critical patent/JP5693375B2/ja
Priority claimed from JP2011114721A external-priority patent/JP5693375B2/ja
Publication of JP2012009848A publication Critical patent/JP2012009848A/ja
Publication of JP2012009848A5 publication Critical patent/JP2012009848A5/ja
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Publication of JP5693375B2 publication Critical patent/JP5693375B2/ja
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JP2011114721A 2010-05-28 2011-05-23 半導体発光素子 Active JP5693375B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011114721A JP5693375B2 (ja) 2010-05-28 2011-05-23 半導体発光素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010122760 2010-05-28
JP2010122760 2010-05-28
JP2011114721A JP5693375B2 (ja) 2010-05-28 2011-05-23 半導体発光素子

Publications (3)

Publication Number Publication Date
JP2012009848A JP2012009848A (ja) 2012-01-12
JP2012009848A5 true JP2012009848A5 (enExample) 2014-02-27
JP5693375B2 JP5693375B2 (ja) 2015-04-01

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JP2011114721A Active JP5693375B2 (ja) 2010-05-28 2011-05-23 半導体発光素子

Country Status (2)

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US (1) US8581285B2 (enExample)
JP (1) JP5693375B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5414627B2 (ja) * 2010-06-07 2014-02-12 株式会社東芝 半導体発光装置及びその製造方法
CN103177662B (zh) * 2011-12-21 2015-01-21 四川柏狮光电技术有限公司 高密度全彩led显示点阵模块
WO2013121708A1 (ja) * 2012-02-15 2013-08-22 パナソニック株式会社 発光装置およびその製造方法
DE102012213566A1 (de) * 2012-08-01 2014-02-06 Robert Bosch Gmbh Verfahren zum Herstellen eines Bondpads zum Thermokompressionsbonden und Bondpad
DE102013103079A1 (de) * 2013-03-26 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
CN105098025A (zh) * 2014-05-07 2015-11-25 新世纪光电股份有限公司 发光装置
TWI641285B (zh) 2014-07-14 2018-11-11 新世紀光電股份有限公司 發光模組與發光單元的製作方法
US20160240758A1 (en) 2015-02-17 2016-08-18 Genesis Photonics Inc. Light emitting diode
JP6434878B2 (ja) * 2015-09-10 2018-12-05 株式会社東芝 発光装置
CN105226177B (zh) * 2015-10-13 2018-03-02 厦门市三安光电科技有限公司 倒装led芯片的共晶电极结构及倒装led芯片
JP6387973B2 (ja) * 2016-01-27 2018-09-12 日亜化学工業株式会社 発光装置
JP6504221B2 (ja) * 2016-09-29 2019-04-24 日亜化学工業株式会社 発光装置の製造方法
JP7256382B2 (ja) * 2019-04-26 2023-04-12 日亜化学工業株式会社 発光装置の製造方法
JP7491769B2 (ja) * 2020-08-04 2024-05-28 株式会社ジャパンディスプレイ 回路基板、ｌｅｄモジュール及び表示装置、並びにｌｅｄモジュールの作製方法及び表示装置の作製方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5134460A (en) * 1986-08-11 1992-07-28 International Business Machines Corporation Aluminum bump, reworkable bump, and titanium nitride structure for tab bonding
JP3130292B2 (ja) 1997-10-14 2001-01-31 松下電子工業株式会社 半導体発光装置及びその製造方法
US6936859B1 (en) * 1998-05-13 2005-08-30 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III nitride compound
JP3896704B2 (ja) * 1998-10-07 2007-03-22 松下電器産業株式会社 ＧａＮ系化合物半導体発光素子
JP4024994B2 (ja) 2000-06-30 2007-12-19 株式会社東芝 半導体発光素子
TWI239578B (en) * 2002-02-21 2005-09-11 Advanced Semiconductor Eng Manufacturing process of bump
JP2004356129A (ja) * 2003-05-27 2004-12-16 Nichia Chem Ind Ltd 半導体装置及びその製造方法
KR100546346B1 (ko) * 2003-07-23 2006-01-26 삼성전자주식회사 재배선 범프 형성방법 및 이를 이용한 반도체 칩과 실장구조
TWI220578B (en) * 2003-09-16 2004-08-21 Opto Tech Corp Light-emitting device capable of increasing light-emitting active region
TWI257714B (en) 2004-10-20 2006-07-01 Arima Optoelectronics Corp Light-emitting device using multilayer composite metal plated layer as flip-chip electrode
DE102005051857A1 (de) * 2005-05-25 2007-02-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. UBM-PAD, Lötkontakt und Verfahren zur Herstellung einer Lötverbindung
TW200644261A (en) * 2005-06-06 2006-12-16 Megica Corp Chip-package structure and manufacturing process thereof
US8148822B2 (en) * 2005-07-29 2012-04-03 Megica Corporation Bonding pad on IC substrate and method for making the same
US20090173956A1 (en) * 2007-12-14 2009-07-09 Philips Lumileds Lighting Company, Llc Contact for a semiconductor light emitting device
TWI447870B (zh) * 2008-02-20 2014-08-01 南茂科技股份有限公司 用於一半導體積體電路之導電結構

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