JP5693375B2 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP5693375B2
JP5693375B2 JP2011114721A JP2011114721A JP5693375B2 JP 5693375 B2 JP5693375 B2 JP 5693375B2 JP 2011114721 A JP2011114721 A JP 2011114721A JP 2011114721 A JP2011114721 A JP 2011114721A JP 5693375 B2 JP5693375 B2 JP 5693375B2
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Japan
Prior art keywords
layer
light emitting
electrode
bump electrode
metal layer
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Application number
JP2011114721A
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English (en)
Japanese (ja)
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JP2012009848A5 (enExample
JP2012009848A (ja
Inventor
和昭 反町
和昭 反町
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Holdings Co Ltd
Citizen Electronics Co Ltd
Citizen Watch Co Ltd
Original Assignee
Citizen Holdings Co Ltd
Citizen Electronics Co Ltd
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Citizen Holdings Co Ltd, Citizen Electronics Co Ltd, Citizen Watch Co Ltd filed Critical Citizen Holdings Co Ltd
Priority to JP2011114721A priority Critical patent/JP5693375B2/ja
Publication of JP2012009848A publication Critical patent/JP2012009848A/ja
Publication of JP2012009848A5 publication Critical patent/JP2012009848A5/ja
Application granted granted Critical
Publication of JP5693375B2 publication Critical patent/JP5693375B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8582—Means for heat extraction or cooling characterised by their shape

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2011114721A 2010-05-28 2011-05-23 半導体発光素子 Active JP5693375B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011114721A JP5693375B2 (ja) 2010-05-28 2011-05-23 半導体発光素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010122760 2010-05-28
JP2010122760 2010-05-28
JP2011114721A JP5693375B2 (ja) 2010-05-28 2011-05-23 半導体発光素子

Publications (3)

Publication Number Publication Date
JP2012009848A JP2012009848A (ja) 2012-01-12
JP2012009848A5 JP2012009848A5 (enExample) 2014-02-27
JP5693375B2 true JP5693375B2 (ja) 2015-04-01

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Family Applications (1)

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JP2011114721A Active JP5693375B2 (ja) 2010-05-28 2011-05-23 半導体発光素子

Country Status (2)

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US (1) US8581285B2 (enExample)
JP (1) JP5693375B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5414627B2 (ja) * 2010-06-07 2014-02-12 株式会社東芝 半導体発光装置及びその製造方法
CN103177662B (zh) * 2011-12-21 2015-01-21 四川柏狮光电技术有限公司 高密度全彩led显示点阵模块
WO2013121708A1 (ja) * 2012-02-15 2013-08-22 パナソニック株式会社 発光装置およびその製造方法
DE102012213566A1 (de) * 2012-08-01 2014-02-06 Robert Bosch Gmbh Verfahren zum Herstellen eines Bondpads zum Thermokompressionsbonden und Bondpad
DE102013103079A1 (de) * 2013-03-26 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
CN105098025A (zh) * 2014-05-07 2015-11-25 新世纪光电股份有限公司 发光装置
TWI641285B (zh) 2014-07-14 2018-11-11 新世紀光電股份有限公司 發光模組與發光單元的製作方法
US20160240758A1 (en) 2015-02-17 2016-08-18 Genesis Photonics Inc. Light emitting diode
JP6434878B2 (ja) * 2015-09-10 2018-12-05 株式会社東芝 発光装置
CN105226177B (zh) * 2015-10-13 2018-03-02 厦门市三安光电科技有限公司 倒装led芯片的共晶电极结构及倒装led芯片
JP6387973B2 (ja) * 2016-01-27 2018-09-12 日亜化学工業株式会社 発光装置
JP6504221B2 (ja) * 2016-09-29 2019-04-24 日亜化学工業株式会社 発光装置の製造方法
JP7256382B2 (ja) * 2019-04-26 2023-04-12 日亜化学工業株式会社 発光装置の製造方法
JP7491769B2 (ja) * 2020-08-04 2024-05-28 株式会社ジャパンディスプレイ 回路基板、ｌｅｄモジュール及び表示装置、並びにｌｅｄモジュールの作製方法及び表示装置の作製方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5134460A (en) * 1986-08-11 1992-07-28 International Business Machines Corporation Aluminum bump, reworkable bump, and titanium nitride structure for tab bonding
JP3130292B2 (ja) 1997-10-14 2001-01-31 松下電子工業株式会社 半導体発光装置及びその製造方法
US6936859B1 (en) * 1998-05-13 2005-08-30 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III nitride compound
JP3896704B2 (ja) * 1998-10-07 2007-03-22 松下電器産業株式会社 ＧａＮ系化合物半導体発光素子
JP4024994B2 (ja) 2000-06-30 2007-12-19 株式会社東芝 半導体発光素子
TWI239578B (en) * 2002-02-21 2005-09-11 Advanced Semiconductor Eng Manufacturing process of bump
JP2004356129A (ja) * 2003-05-27 2004-12-16 Nichia Chem Ind Ltd 半導体装置及びその製造方法
KR100546346B1 (ko) * 2003-07-23 2006-01-26 삼성전자주식회사 재배선 범프 형성방법 및 이를 이용한 반도체 칩과 실장구조
TWI220578B (en) * 2003-09-16 2004-08-21 Opto Tech Corp Light-emitting device capable of increasing light-emitting active region
TWI257714B (en) 2004-10-20 2006-07-01 Arima Optoelectronics Corp Light-emitting device using multilayer composite metal plated layer as flip-chip electrode
DE102005051857A1 (de) * 2005-05-25 2007-02-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. UBM-PAD, Lötkontakt und Verfahren zur Herstellung einer Lötverbindung
TW200644261A (en) * 2005-06-06 2006-12-16 Megica Corp Chip-package structure and manufacturing process thereof
US8148822B2 (en) * 2005-07-29 2012-04-03 Megica Corporation Bonding pad on IC substrate and method for making the same
US20090173956A1 (en) * 2007-12-14 2009-07-09 Philips Lumileds Lighting Company, Llc Contact for a semiconductor light emitting device
TWI447870B (zh) * 2008-02-20 2014-08-01 南茂科技股份有限公司 用於一半導體積體電路之導電結構

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Publication number Publication date
JP2012009848A (ja) 2012-01-12
US8581285B2 (en) 2013-11-12
US20110291141A1 (en) 2011-12-01

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