JP2010519744A5 - - Google Patents

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Publication number
JP2010519744A5
JP2010519744A5 JP2009550200A JP2009550200A JP2010519744A5 JP 2010519744 A5 JP2010519744 A5 JP 2010519744A5 JP 2009550200 A JP2009550200 A JP 2009550200A JP 2009550200 A JP2009550200 A JP 2009550200A JP 2010519744 A5 JP2010519744 A5 JP 2010519744A5
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JP
Japan
Prior art keywords
chip
contact
contact region
semiconductor substrate
region
Prior art date
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Application number
JP2009550200A
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English (en)
Japanese (ja)
Other versions
JP5210327B2 (ja
JP2010519744A (ja
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Publication date
Priority claimed from DE102007008524A external-priority patent/DE102007008524A1/de
Application filed filed Critical
Publication of JP2010519744A publication Critical patent/JP2010519744A/ja
Publication of JP2010519744A5 publication Critical patent/JP2010519744A5/ja
Application granted granted Critical
Publication of JP5210327B2 publication Critical patent/JP5210327B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009550200A 2007-02-21 2008-01-31 少なくとも１つの半導体基体を備えた発光チップ Expired - Fee Related JP5210327B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007008524A DE102007008524A1 (de) 2007-02-21 2007-02-21 Strahlung emittierender Chip mit mindestens einem Halbleiterkörper
DE102007008524.0 2007-02-21
PCT/DE2008/000172 WO2008101456A1 (de) 2007-02-21 2008-01-31 Strahlung emittierender halbleiterkörper mit einer für die emittierte strahlung durchlässigen, elektrisch leitenden kontaktschicht

Publications (3)

Publication Number Publication Date
JP2010519744A JP2010519744A (ja) 2010-06-03
JP2010519744A5 true JP2010519744A5 (enExample) 2011-06-23
JP5210327B2 JP5210327B2 (ja) 2013-06-12

Family

ID=39471756

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009550200A Expired - Fee Related JP5210327B2 (ja) 2007-02-21 2008-01-31 少なくとも１つの半導体基体を備えた発光チップ

Country Status (8)

Country Link
US (1) US8067783B2 (enExample)
EP (1) EP2122697B1 (enExample)
JP (1) JP5210327B2 (enExample)
KR (1) KR101475963B1 (enExample)
CN (1) CN101617414B (enExample)
DE (1) DE102007008524A1 (enExample)
TW (1) TWI514612B (enExample)
WO (1) WO2008101456A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9754926B2 (en) * 2011-01-31 2017-09-05 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
US9660153B2 (en) 2007-11-14 2017-05-23 Cree, Inc. Gap engineering for flip-chip mounted horizontal LEDs
US9640737B2 (en) 2011-01-31 2017-05-02 Cree, Inc. Horizontal light emitting diodes including phosphor particles
DE102008030815A1 (de) * 2008-06-30 2009-12-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl von optoelektronischen Bauelementen
US9117944B2 (en) * 2008-09-24 2015-08-25 Koninklijke Philips N.V. Semiconductor light emitting devices grown on composite substrates
US9831220B2 (en) 2011-01-31 2017-11-28 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
US9673363B2 (en) 2011-01-31 2017-06-06 Cree, Inc. Reflective mounting substrates for flip-chip mounted horizontal LEDs
JP6077201B2 (ja) 2011-08-11 2017-02-08 昭和電工株式会社 発光ダイオードおよびその製造方法
JP6038443B2 (ja) * 2011-11-21 2016-12-07 スタンレー電気株式会社 半導体発光装置および半導体発光装置の製造方法
DE102012007727A1 (de) 2012-04-18 2013-10-24 Mühlbauer Ag Festkörper-Leuchtmittelanordnung sowie Vorrichtung und Verfahren zu deren Herstellung
DE102018111324A1 (de) 2018-05-11 2019-11-14 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
KR102036069B1 (ko) 2018-06-12 2019-10-24 경희대학교 산학협력단 공극 패턴을 포함하는 복사 냉각 구조 및 그것의 형성 방법
KR102036071B1 (ko) 2018-06-12 2019-10-24 경희대학교 산학협력단 다층 복사 냉각 구조
DE102019131502A1 (de) * 2019-08-29 2021-03-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung strahlungsemittierender halbleiterchips, strahlungsemittierender halbleiterchip und strahlungsemittierendes bauelement

Family Cites Families (22)

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Publication number Priority date Publication date Assignee Title
JPS63244689A (ja) * 1987-03-30 1988-10-12 Nec Corp 発光ダイオ−ド
JP3647968B2 (ja) 1996-04-10 2005-05-18 日本板硝子株式会社 自己走査型発光装置
US6573537B1 (en) 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
DE10017336C2 (de) * 2000-04-07 2002-05-16 Vishay Semiconductor Gmbh verfahren zur Herstellung von strahlungsemittierenden Halbleiter-Wafern
DE10026254A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip mit einer auf GaN basierenden strahlungsemittierenden Epitaxieschichtenfolge
EP1277240B1 (de) 2000-04-26 2015-05-20 OSRAM Opto Semiconductors GmbH Verfahren zur Herstellung eines lichtmittierenden Halbleiterbauelements
US20020017652A1 (en) 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
DE10162914B4 (de) 2001-12-20 2010-06-24 Osram Opto Semiconductors Gmbh Lichtemittierendes Halbleiterbauelement
TW577178B (en) 2002-03-04 2004-02-21 United Epitaxy Co Ltd High efficient reflective metal layer of light emitting diode
JP3896027B2 (ja) * 2002-04-17 2007-03-22 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
KR100523803B1 (ko) * 2003-02-13 2005-10-25 박익성 반도체 소자의 패키지 및 그 제조 방법
DE10308866A1 (de) * 2003-02-28 2004-09-09 Osram Opto Semiconductors Gmbh Beleuchtungsmodul und Verfahren zu dessen Herstellung
JP2004304161A (ja) * 2003-03-14 2004-10-28 Sony Corp 発光素子、発光装置、画像表示装置、発光素子の製造方法及び画像表示装置の製造方法
US7061065B2 (en) * 2003-03-31 2006-06-13 National Chung-Hsing University Light emitting diode and method for producing the same
ATE486374T1 (de) * 2003-08-08 2010-11-15 Kang Sang Kyu Nitrid-mikrolicht-emissionsdiode mit grosser helligkeit und herstellungsverfahren dafür
MXPA06011114A (es) * 2004-03-29 2007-01-25 Articulated Technologies Llc Hoja luminosa fabricada de rodillo a rodillo y dispositivos encapsulados de circuito semiconductor.
US20060002442A1 (en) * 2004-06-30 2006-01-05 Kevin Haberern Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
EP1774599B1 (de) 2004-07-30 2015-11-04 OSRAM Opto Semiconductors GmbH Verfahren zur herstellung von halbleiterchips in dünnfilmtechnik und halbleiterchip in dünnfilmtechnik
DE102004036962A1 (de) * 2004-07-30 2006-03-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips in Dünnfilmtechnik und Halbleiterchip in Dünnfilmtechnik
JP2006237071A (ja) * 2005-02-22 2006-09-07 Toyoda Gosei Co Ltd 発光素子およびこれを用いた表示装置
JP4769610B2 (ja) * 2005-03-29 2011-09-07 富士フイルム株式会社 溶液製膜方法
US20070023765A1 (en) * 2005-07-29 2007-02-01 Thomas Alan C Acicular ITO for LED array

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