CN101617414B - 具有对所发射的辐射能透射的导电接触层的发射辐射的半导体本体 - Google Patents

具有对所发射的辐射能透射的导电接触层的发射辐射的半导体本体 Download PDF

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Publication number
CN101617414B
CN101617414B CN200880005826XA CN200880005826A CN101617414B CN 101617414 B CN101617414 B CN 101617414B CN 200880005826X A CN200880005826X A CN 200880005826XA CN 200880005826 A CN200880005826 A CN 200880005826A CN 101617414 B CN101617414 B CN 101617414B
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contact
chip
radiation
semiconductor body
chip according
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CN101617414A (zh
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R·沃思
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/832—Electrodes
    • H10H29/8322—Electrodes characterised by their materials
    • H10H29/8323—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/85—Packages
    • H10H29/857—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

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  • Led Device Packages (AREA)
  • Electrodes Of Semiconductors (AREA)
CN200880005826XA 2007-02-21 2008-01-31 具有对所发射的辐射能透射的导电接触层的发射辐射的半导体本体 Active CN101617414B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007008524A DE102007008524A1 (de) 2007-02-21 2007-02-21 Strahlung emittierender Chip mit mindestens einem Halbleiterkörper
DE102007008524.0 2007-02-21
PCT/DE2008/000172 WO2008101456A1 (de) 2007-02-21 2008-01-31 Strahlung emittierender halbleiterkörper mit einer für die emittierte strahlung durchlässigen, elektrisch leitenden kontaktschicht

Publications (2)

Publication Number Publication Date
CN101617414A CN101617414A (zh) 2009-12-30
CN101617414B true CN101617414B (zh) 2012-07-04

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CN200880005826XA Active CN101617414B (zh) 2007-02-21 2008-01-31 具有对所发射的辐射能透射的导电接触层的发射辐射的半导体本体

Country Status (8)

Country Link
US (1) US8067783B2 (enExample)
EP (1) EP2122697B1 (enExample)
JP (1) JP5210327B2 (enExample)
KR (1) KR101475963B1 (enExample)
CN (1) CN101617414B (enExample)
DE (1) DE102007008524A1 (enExample)
TW (1) TWI514612B (enExample)
WO (1) WO2008101456A1 (enExample)

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US9660153B2 (en) 2007-11-14 2017-05-23 Cree, Inc. Gap engineering for flip-chip mounted horizontal LEDs
US9640737B2 (en) 2011-01-31 2017-05-02 Cree, Inc. Horizontal light emitting diodes including phosphor particles
US9754926B2 (en) * 2011-01-31 2017-09-05 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
DE102008030815A1 (de) * 2008-06-30 2009-12-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl von optoelektronischen Bauelementen
US9117944B2 (en) * 2008-09-24 2015-08-25 Koninklijke Philips N.V. Semiconductor light emitting devices grown on composite substrates
US9831220B2 (en) 2011-01-31 2017-11-28 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
US9673363B2 (en) 2011-01-31 2017-06-06 Cree, Inc. Reflective mounting substrates for flip-chip mounted horizontal LEDs
JP6077201B2 (ja) 2011-08-11 2017-02-08 昭和電工株式会社 発光ダイオードおよびその製造方法
JP6038443B2 (ja) * 2011-11-21 2016-12-07 スタンレー電気株式会社 半導体発光装置および半導体発光装置の製造方法
DE102012007727A1 (de) 2012-04-18 2013-10-24 Mühlbauer Ag Festkörper-Leuchtmittelanordnung sowie Vorrichtung und Verfahren zu deren Herstellung
DE102018111324A1 (de) * 2018-05-11 2019-11-14 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
KR102036071B1 (ko) 2018-06-12 2019-10-24 경희대학교 산학협력단 다층 복사 냉각 구조
KR102036069B1 (ko) 2018-06-12 2019-10-24 경희대학교 산학협력단 공극 패턴을 포함하는 복사 냉각 구조 및 그것의 형성 방법
DE102019131502A1 (de) * 2019-08-29 2021-03-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung strahlungsemittierender halbleiterchips, strahlungsemittierender halbleiterchip und strahlungsemittierendes bauelement

Citations (1)

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WO2005015647A1 (en) * 2003-08-08 2005-02-17 Vichel Inc. Nitride micro light emitting diode with high brightness and method of manufacturing the same

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JPS63244689A (ja) 1987-03-30 1988-10-12 Nec Corp 発光ダイオ−ド
JP3647968B2 (ja) 1996-04-10 2005-05-18 日本板硝子株式会社 自己走査型発光装置
US6573537B1 (en) * 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
DE10017336C2 (de) * 2000-04-07 2002-05-16 Vishay Semiconductor Gmbh verfahren zur Herstellung von strahlungsemittierenden Halbleiter-Wafern
DE10026254A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip mit einer auf GaN basierenden strahlungsemittierenden Epitaxieschichtenfolge
WO2001082384A1 (de) 2000-04-26 2001-11-01 Osram Opto Semiconductors Gmbh Strahlungsmittierendes halbleiterbauelement und herstellungsverfahren
US20020017652A1 (en) 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
DE10162914B4 (de) 2001-12-20 2010-06-24 Osram Opto Semiconductors Gmbh Lichtemittierendes Halbleiterbauelement
TW577178B (en) 2002-03-04 2004-02-21 United Epitaxy Co Ltd High efficient reflective metal layer of light emitting diode
JP3896027B2 (ja) 2002-04-17 2007-03-22 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
KR100523803B1 (ko) * 2003-02-13 2005-10-25 박익성 반도체 소자의 패키지 및 그 제조 방법
DE10308866A1 (de) 2003-02-28 2004-09-09 Osram Opto Semiconductors Gmbh Beleuchtungsmodul und Verfahren zu dessen Herstellung
JP2004304161A (ja) * 2003-03-14 2004-10-28 Sony Corp 発光素子、発光装置、画像表示装置、発光素子の製造方法及び画像表示装置の製造方法
US7061065B2 (en) * 2003-03-31 2006-06-13 National Chung-Hsing University Light emitting diode and method for producing the same
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US20060002442A1 (en) * 2004-06-30 2006-01-05 Kevin Haberern Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
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JP2006237071A (ja) * 2005-02-22 2006-09-07 Toyoda Gosei Co Ltd 発光素子およびこれを用いた表示装置
JP4769610B2 (ja) * 2005-03-29 2011-09-07 富士フイルム株式会社 溶液製膜方法
US20070023765A1 (en) * 2005-07-29 2007-02-01 Thomas Alan C Acicular ITO for LED array

Patent Citations (1)

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WO2005015647A1 (en) * 2003-08-08 2005-02-17 Vichel Inc. Nitride micro light emitting diode with high brightness and method of manufacturing the same

Also Published As

Publication number Publication date
DE102007008524A1 (de) 2008-08-28
US8067783B2 (en) 2011-11-29
TWI514612B (zh) 2015-12-21
EP2122697A1 (de) 2009-11-25
JP2010519744A (ja) 2010-06-03
EP2122697B1 (de) 2018-07-04
CN101617414A (zh) 2009-12-30
KR20090113338A (ko) 2009-10-29
KR101475963B1 (ko) 2014-12-23
TW200845428A (en) 2008-11-16
WO2008101456A1 (de) 2008-08-28
JP5210327B2 (ja) 2013-06-12
US20100038673A1 (en) 2010-02-18

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