JP2011524635A5 - - Google Patents
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- JP2011524635A5 JP2011524635A5 JP2011513590A JP2011513590A JP2011524635A5 JP 2011524635 A5 JP2011524635 A5 JP 2011524635A5 JP 2011513590 A JP2011513590 A JP 2011513590A JP 2011513590 A JP2011513590 A JP 2011513590A JP 2011524635 A5 JP2011524635 A5 JP 2011524635A5
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- Prior art keywords
- design
- defects
- wafer
- reticle
- computer subsystem
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- 230000007547 defect Effects 0.000 claims description 372
- 238000000034 method Methods 0.000 claims description 246
- 230000008569 process Effects 0.000 claims description 197
- 238000013461 design Methods 0.000 claims description 189
- 235000012431 wafers Nutrition 0.000 claims description 156
- 238000007689 inspection Methods 0.000 claims description 113
- 238000010894 electron beam technology Methods 0.000 claims description 61
- 238000001459 lithography Methods 0.000 claims description 57
- 238000012552 review Methods 0.000 claims description 54
- 238000004458 analytical method Methods 0.000 claims description 45
- 238000004519 manufacturing process Methods 0.000 claims description 34
- 238000004088 simulation Methods 0.000 claims description 25
- 230000009897 systematic effect Effects 0.000 claims description 25
- 238000005259 measurement Methods 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 6
- 238000012360 testing method Methods 0.000 claims description 4
- 238000004141 dimensional analysis Methods 0.000 claims description 3
- 230000003993 interaction Effects 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 description 26
- 239000004065 semiconductor Substances 0.000 description 10
- 238000001514 detection method Methods 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 6
- 238000004886 process control Methods 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 238000005070 sampling Methods 0.000 description 6
- 238000011109 contamination Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 241000287219 Serinus canaria Species 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000012938 design process Methods 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000009643 growth defect Effects 0.000 description 1
- 238000001198 high resolution scanning electron microscopy Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6055408P | 2008-06-11 | 2008-06-11 | |
| US61/060,554 | 2008-06-11 | ||
| PCT/US2009/046379 WO2009152046A1 (en) | 2008-06-11 | 2009-06-05 | Systems and methods for detecting design and process defects on a wafer, reviewing defects on a wafer, selecting one or more features within a design for use as process monitoring features, or some combination thereof |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014140067A Division JP6006263B2 (ja) | 2008-06-11 | 2014-07-07 | ウェーハー上の設計欠陥および工程欠陥の検出、ウェーハー上の欠陥の精査、設計内の１つ以上の特徴を工程監視特徴として使用するための選択、またはそのいくつかの組み合わせのためのシステムおよび方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011524635A JP2011524635A (ja) | 2011-09-01 |
| JP2011524635A5 true JP2011524635A5 (enExample) | 2014-08-21 |
| JP6185693B2 JP6185693B2 (ja) | 2017-08-23 |
Family
ID=41417077
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011513590A Active JP6185693B2 (ja) | 2008-06-11 | 2009-06-05 | ウェーハー上の設計欠陥および工程欠陥の検出、ウェーハー上の欠陥の精査、設計内の１つ以上の特徴を工程監視特徴として使用するための選択、またはそのいくつかの組み合わせのためのシステムおよび方法 |
| JP2014140067A Active JP6006263B2 (ja) | 2008-06-11 | 2014-07-07 | ウェーハー上の設計欠陥および工程欠陥の検出、ウェーハー上の欠陥の精査、設計内の１つ以上の特徴を工程監視特徴として使用するための選択、またはそのいくつかの組み合わせのためのシステムおよび方法 |
| JP2016175204A Active JP6326465B2 (ja) | 2008-06-11 | 2016-09-08 | ウェーハー上の設計欠陥および工程欠陥の検出、ウェーハー上の欠陥の精査、設計内の１つ以上の特徴を工程監視特徴として使用するための選択、またはそのいくつかの組み合わせのための方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014140067A Active JP6006263B2 (ja) | 2008-06-11 | 2014-07-07 | ウェーハー上の設計欠陥および工程欠陥の検出、ウェーハー上の欠陥の精査、設計内の１つ以上の特徴を工程監視特徴として使用するための選択、またはそのいくつかの組み合わせのためのシステムおよび方法 |
| JP2016175204A Active JP6326465B2 (ja) | 2008-06-11 | 2016-09-08 | ウェーハー上の設計欠陥および工程欠陥の検出、ウェーハー上の欠陥の精査、設計内の１つ以上の特徴を工程監視特徴として使用するための選択、またはそのいくつかの組み合わせのための方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9710903B2 (enExample) |
| JP (3) | JP6185693B2 (enExample) |
| WO (1) | WO2009152046A1 (enExample) |
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| US9939488B2 (en) | 2011-08-31 | 2018-04-10 | Teseda Corporation | Field triage of EOS failures in semiconductor devices |
| US8907697B2 (en) | 2011-08-31 | 2014-12-09 | Teseda Corporation | Electrical characterization for a semiconductor device pin |
| JP5581286B2 (ja) * | 2011-09-09 | 2014-08-27 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法および欠陥検査装置 |
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2009
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- 2009-06-05 WO PCT/US2009/046379 patent/WO2009152046A1/en not_active Ceased
- 2009-06-05 JP JP2011513590A patent/JP6185693B2/ja active Active
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2014
- 2014-07-07 JP JP2014140067A patent/JP6006263B2/ja active Active
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2016
- 2016-09-08 JP JP2016175204A patent/JP6326465B2/ja active Active
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