JP2011522959A5 - - Google Patents
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- Publication number
- JP2011522959A5 JP2011522959A5 JP2011505006A JP2011505006A JP2011522959A5 JP 2011522959 A5 JP2011522959 A5 JP 2011522959A5 JP 2011505006 A JP2011505006 A JP 2011505006A JP 2011505006 A JP2011505006 A JP 2011505006A JP 2011522959 A5 JP2011522959 A5 JP 2011522959A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- contact area
- disposed
- shaft
- socket
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011248 coating agent Substances 0.000 claims description 27
- 238000000576 coating method Methods 0.000 claims description 27
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 7
- 238000000151 deposition Methods 0.000 claims 2
- 239000003792 electrolyte Substances 0.000 claims 2
- 239000013535 sea water Substances 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4470308P | 2008-04-14 | 2008-04-14 | |
| US61/044,703 | 2008-04-14 | ||
| PCT/US2009/002293 WO2009128887A1 (en) | 2008-04-14 | 2009-04-13 | Manufacturing apparatus for depositing a material on an electrode for use therein |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011522959A JP2011522959A (ja) | 2011-08-04 |
| JP2011522959A5 true JP2011522959A5 (enExample) | 2011-09-22 |
| JP5762949B2 JP5762949B2 (ja) | 2015-08-12 |
Family
ID=40796546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011505006A Expired - Fee Related JP5762949B2 (ja) | 2008-04-14 | 2009-04-13 | 材料を蒸着するための製造装置及び当該装置において使用される電極 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US8784565B2 (enExample) |
| EP (1) | EP2266368B1 (enExample) |
| JP (1) | JP5762949B2 (enExample) |
| KR (1) | KR101639577B1 (enExample) |
| CN (1) | CN102047750B (enExample) |
| AU (1) | AU2009236678B2 (enExample) |
| CA (1) | CA2721194A1 (enExample) |
| RU (1) | RU2494578C2 (enExample) |
| TW (1) | TWI495029B (enExample) |
| WO (1) | WO2009128887A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101552501B1 (ko) | 2008-04-14 | 2015-09-14 | 헴로크세미컨덕터코포레이션 | 재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극 |
| JP5627703B2 (ja) | 2009-11-18 | 2014-11-19 | アールイーシー シリコン インコーポレイテッド | 流動床反応器 |
| DE102010013043B4 (de) * | 2010-03-26 | 2013-05-29 | Centrotherm Sitec Gmbh | Elektrodenanordnung und CVD-Reaktor oder Hochtemperatur-Gasumwandler mit einer Elektrodenanordnung |
| CN102790233A (zh) * | 2011-05-20 | 2012-11-21 | 罗臬 | 液流型电化学电池 |
| JP5507505B2 (ja) * | 2011-08-01 | 2014-05-28 | 信越化学工業株式会社 | 多結晶シリコンの製造方法 |
| KR101133151B1 (ko) * | 2011-10-19 | 2012-04-06 | 주식회사 대산머트리얼즈 | 증착 공정용 전극 제조 방법 |
| KR101300779B1 (ko) * | 2011-11-08 | 2013-08-29 | (주) 인광 | 폴리실리콘 정제용 ｃｖｄ장치의 금속 전극의 재생 방법 및 이 방법으로 재생된 금속 전극 |
| TW201531440A (zh) * | 2013-12-30 | 2015-08-16 | Hemlock Semiconductor Corp | 用於耦合至設置在反應器內之電極上之插座以生長多晶矽的載體 |
| US10287679B2 (en) | 2015-05-11 | 2019-05-14 | Msp Corporation | Apparatus and method for vapor generation and film deposition |
| US11709156B2 (en) | 2017-09-18 | 2023-07-25 | Waters Technologies Corporation | Use of vapor deposition coated flow paths for improved analytical analysis |
| US11709155B2 (en) | 2017-09-18 | 2023-07-25 | Waters Technologies Corporation | Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes |
| US12181452B2 (en) | 2017-09-18 | 2024-12-31 | Waters Technologies Corporation | Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes |
| US12180581B2 (en) | 2017-09-18 | 2024-12-31 | Waters Technologies Corporation | Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes |
| CN111447982B (zh) * | 2017-10-23 | 2022-09-13 | Msp公司 | 用于蒸汽发生和薄膜沉积的设备和方法 |
| CN113507971A (zh) | 2019-02-27 | 2021-10-15 | 沃特世科技公司 | 用于最大程度减少分析物吸附的色谱密封件和经涂覆的流动路径 |
| US11918936B2 (en) | 2020-01-17 | 2024-03-05 | Waters Technologies Corporation | Performance and dynamic range for oligonucleotide bioanalysis through reduction of non specific binding |
| CN116391122A (zh) | 2020-09-24 | 2023-07-04 | 沃特世科技公司 | 用于反应性分子分离的色谱硬件改进 |
| CN113649657B (zh) * | 2021-06-01 | 2022-10-04 | 清华大学 | 一种电解加工用的纳米尺度多晶硅工具电极及其制备方法 |
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| NL124690C (enExample) * | 1958-05-29 | |||
| DE1150366B (de) * | 1958-12-09 | 1963-06-20 | Siemens Ag | Verfahren zur Herstellung von Reinstsilicium |
| NL251143A (enExample) * | 1959-05-04 | |||
| DE1155759B (de) * | 1959-06-11 | 1963-10-17 | Siemens Ag | Vorrichtung zur Gewinnung reinsten kristallinen Halbleitermaterials fuer elektrotechnische Zwecke |
| DE1264400B (de) | 1961-01-26 | 1968-03-28 | Siemens Ag | Vorrichtung zur Gewinnung reinen Halbleitermaterials aus der Gasphase |
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| DE2324365C3 (de) * | 1973-05-14 | 1978-05-11 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Reaktionsgefäß zum Abscheiden von Halbleitermaterial auf erhitzte Trägerkörper |
| DE2652218A1 (de) * | 1976-11-16 | 1978-05-24 | Wacker Chemitronic | Verfahren zur herstellung von substratgebundenem, grossflaechigem silicium |
| JPS53106626A (en) * | 1977-03-02 | 1978-09-16 | Komatsu Mfg Co Ltd | Method of making high purity rod silicon and appratus therefor |
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| DE2912661C2 (de) * | 1979-03-30 | 1982-06-24 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Verfahren zur Abscheidung von reinem Halbleitermaterial und Düse zur Durchführung des Verfahrens |
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| RU2020777C1 (ru) * | 1991-07-03 | 1994-09-30 | Нижегородский научно-исследовательский приборостроительный институт "Кварц" | Способ металлизации подложки из фторопласта |
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| JP2007281161A (ja) | 2006-04-06 | 2007-10-25 | Sumitomo Electric Ind Ltd | 半導体製造装置用ウエハ保持体及び半導体製造装置 |
| US9683286B2 (en) * | 2006-04-28 | 2017-06-20 | Gtat Corporation | Increased polysilicon deposition in a CVD reactor |
| KR101552501B1 (ko) | 2008-04-14 | 2015-09-14 | 헴로크세미컨덕터코포레이션 | 재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극 |
| US20110036292A1 (en) | 2008-04-14 | 2011-02-17 | Max Dehtiar | Manufacturing Apparatus For Depositing A Material And An Electrode For Use Therein |
-
2009
- 2009-04-13 KR KR1020107025227A patent/KR101639577B1/ko not_active Expired - Fee Related
- 2009-04-13 US US12/937,927 patent/US8784565B2/en not_active Expired - Fee Related
- 2009-04-13 CA CA2721194A patent/CA2721194A1/en not_active Abandoned
- 2009-04-13 CN CN2009801201109A patent/CN102047750B/zh not_active Expired - Fee Related
- 2009-04-13 RU RU2010146252/07A patent/RU2494578C2/ru not_active IP Right Cessation
- 2009-04-13 AU AU2009236678A patent/AU2009236678B2/en not_active Ceased
- 2009-04-13 WO PCT/US2009/002293 patent/WO2009128887A1/en not_active Ceased
- 2009-04-13 JP JP2011505006A patent/JP5762949B2/ja not_active Expired - Fee Related
- 2009-04-13 EP EP09732132.7A patent/EP2266368B1/en not_active Not-in-force
- 2009-04-14 TW TW098112371A patent/TWI495029B/zh not_active IP Right Cessation
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