|
GB1054141A
(enExample)
*
|
|
1900-01-01 |
|
|
|
US1738828A
(en)
*
|
1925-03-02 |
1929-12-10 |
Jackson Arthur Hews |
Low-resistance permanent wire
|
|
US2600823A
(en)
*
|
1949-01-15 |
1952-06-17 |
Allegheny Ludlum Steel |
Hot top electrode tip
|
|
US3330251A
(en)
*
|
1955-11-02 |
1967-07-11 |
Siemens Ag |
Apparatus for producing highest-purity silicon for electric semiconductor devices
|
|
US3011877A
(en)
*
|
1956-06-25 |
1961-12-05 |
Siemens Ag |
Production of high-purity semiconductor materials for electrical purposes
|
|
BE564212A
(enExample)
*
|
1957-01-25 |
|
|
|
|
NL124690C
(enExample)
*
|
1958-05-29 |
|
|
|
|
DE1150366B
(de)
*
|
1958-12-09 |
1963-06-20 |
Siemens Ag |
Verfahren zur Herstellung von Reinstsilicium
|
|
NL251143A
(enExample)
*
|
1959-05-04 |
|
|
|
|
DE1155759B
(de)
*
|
1959-06-11 |
1963-10-17 |
Siemens Ag |
Vorrichtung zur Gewinnung reinsten kristallinen Halbleitermaterials fuer elektrotechnische Zwecke
|
|
DE1264400B
(de)
*
|
1961-01-26 |
1968-03-28 |
Siemens Ag |
Vorrichtung zur Gewinnung reinen Halbleitermaterials aus der Gasphase
|
|
DE1138481C2
(de)
*
|
1961-06-09 |
1963-05-22 |
Siemens Ag |
Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase
|
|
DE2324365C3
(de)
*
|
1973-05-14 |
1978-05-11 |
Siemens Ag, 1000 Berlin Und 8000 Muenchen |
Reaktionsgefäß zum Abscheiden von Halbleitermaterial auf erhitzte Trägerkörper
|
|
DE2652218A1
(de)
*
|
1976-11-16 |
1978-05-24 |
Wacker Chemitronic |
Verfahren zur herstellung von substratgebundenem, grossflaechigem silicium
|
|
JPS53106626A
(en)
*
|
1977-03-02 |
1978-09-16 |
Komatsu Mfg Co Ltd |
Method of making high purity rod silicon and appratus therefor
|
|
JPS53108029A
(en)
*
|
1977-03-03 |
1978-09-20 |
Komatsu Mfg Co Ltd |
Method of making high purity silicon having uniform shape
|
|
US4179530A
(en)
*
|
1977-05-20 |
1979-12-18 |
Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh |
Process for the deposition of pure semiconductor material
|
|
US4173944A
(en)
*
|
1977-05-20 |
1979-11-13 |
Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh |
Silverplated vapor deposition chamber
|
|
DE2912661C2
(de)
*
|
1979-03-30 |
1982-06-24 |
Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen |
Verfahren zur Abscheidung von reinem Halbleitermaterial und Düse zur Durchführung des Verfahrens
|
|
US4304641A
(en)
*
|
1980-11-24 |
1981-12-08 |
International Business Machines Corporation |
Rotary electroplating cell with controlled current distribution
|
|
US4477911A
(en)
*
|
1982-12-02 |
1984-10-16 |
Westinghouse Electric Corp. |
Integral heat pipe-electrode
|
|
US4481232A
(en)
*
|
1983-05-27 |
1984-11-06 |
The United States Of America As Represented By The Department Of Energy |
Method and apparatus for producing high purity silicon
|
|
US4466864A
(en)
*
|
1983-12-16 |
1984-08-21 |
At&T Technologies, Inc. |
Methods of and apparatus for electroplating preselected surface regions of electrical articles
|
|
US4822641A
(en)
*
|
1985-04-30 |
1989-04-18 |
Inovan Gmbh & Co. Kg |
Method of manufacturing a contact construction material structure
|
|
SE452862B
(sv)
*
|
1985-06-05 |
1987-12-21 |
Aga Ab |
Ljusbagselektrod
|
|
US4707225A
(en)
*
|
1986-01-06 |
1987-11-17 |
Rockwell International Corporation |
Fluid-cooled channel construction
|
|
US4805556A
(en)
*
|
1988-01-15 |
1989-02-21 |
Union Carbide Corporation |
Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane
|
|
US5096550A
(en)
*
|
1990-10-15 |
1992-03-17 |
The United States Of America As Represented By The United States Department Of Energy |
Method and apparatus for spatially uniform electropolishing and electrolytic etching
|
|
US5906799A
(en)
*
|
1992-06-01 |
1999-05-25 |
Hemlock Semiconductor Corporation |
Chlorosilane and hydrogen reactor
|
|
US5227041A
(en)
*
|
1992-06-12 |
1993-07-13 |
Digital Equipment Corporation |
Dry contact electroplating apparatus
|
|
DE4243570C1
(de)
*
|
1992-12-22 |
1994-01-27 |
Heraeus Gmbh W C |
Elektrischer Kontaktkörper
|
|
US5422088A
(en)
*
|
1994-01-28 |
1995-06-06 |
Hemlock Semiconductor Corporation |
Process for hydrogenation of tetrachlorosilane
|
|
JP3377849B2
(ja)
*
|
1994-02-02 |
2003-02-17 |
日本エレクトロプレイテイング・エンジニヤース株式会社 |
ウエーハ用メッキ装置
|
|
DE4424929C2
(de)
*
|
1994-07-14 |
1997-02-13 |
Wacker Chemie Gmbh |
Halterung für Trägerkörper in einer Vorrichtung zur Abscheidung von Halbleitermaterial
|
|
US5567300A
(en)
*
|
1994-09-02 |
1996-10-22 |
Ibm Corporation |
Electrochemical metal removal technique for planarization of surfaces
|
|
FR2741227A1
(fr)
*
|
1995-11-14 |
1997-05-16 |
Verrerie & Cristallerie |
Electrode, notamment destinee a etre utilisee dans des fours de fusion du verre
|
|
US5807165A
(en)
*
|
1997-03-26 |
1998-09-15 |
International Business Machines Corporation |
Method of electrochemical mechanical planarization
|
|
US5911619A
(en)
*
|
1997-03-26 |
1999-06-15 |
International Business Machines Corporation |
Apparatus for electrochemical mechanical planarization
|
|
NL1005963C2
(nl)
*
|
1997-05-02 |
1998-11-09 |
Asm Int |
Verticale oven voor het behandelen van halfgeleidersubstraten.
|
|
RU2135629C1
(ru)
*
|
1997-11-12 |
1999-08-27 |
Государственное предприятие ВНИИавтогенмаш |
Способ повышения долговечности электродных и сопловых устройств и технологический плазматрон для его осуществления
|
|
DE19882883B4
(de)
*
|
1997-12-15 |
2009-02-26 |
Advanced Silicon Materials LLC, (n.d.Ges.d.Staates Delaware), Moses Lake |
System für die chemische Abscheidung aus der Gasphase zum Herstellen polykristalliner Siliziumstangen
|
|
US6544333B2
(en)
*
|
1997-12-15 |
2003-04-08 |
Advanced Silicon Materials Llc |
Chemical vapor deposition system for polycrystalline silicon rod production
|
|
US6004880A
(en)
*
|
1998-02-20 |
1999-12-21 |
Lsi Logic Corporation |
Method of single step damascene process for deposition and global planarization
|
|
US6176992B1
(en)
*
|
1998-11-03 |
2001-01-23 |
Nutool, Inc. |
Method and apparatus for electro-chemical mechanical deposition
|
|
US6284312B1
(en)
*
|
1999-02-19 |
2001-09-04 |
Gt Equipment Technologies Inc |
Method and apparatus for chemical vapor deposition of polysilicon
|
|
JP4372918B2
(ja)
*
|
1999-06-30 |
2009-11-25 |
パナソニック電工株式会社 |
プラズマ処理装置及びプラズマ処理方法
|
|
JP2001156042A
(ja)
*
|
1999-11-29 |
2001-06-08 |
Hitachi Ltd |
プラズマ処理装置
|
|
DE10041564C2
(de)
*
|
2000-08-24 |
2002-06-27 |
Heraeus Noblelight Gmbh |
Kühlbares Infrarotstrahlerelement
|
|
DE10101040A1
(de)
*
|
2001-01-11 |
2002-07-25 |
Wacker Chemie Gmbh |
Vorrichtung und Verfahren zur Herstellung eines polykristallinen Siliciumstabes
|
|
JP2002231357A
(ja)
*
|
2001-02-06 |
2002-08-16 |
Nagano Fujitsu Component Kk |
電気接点およびコネクタ
|
|
JP4402860B2
(ja)
*
|
2001-03-28 |
2010-01-20 |
忠弘 大見 |
プラズマ処理装置
|
|
NL1017849C2
(nl)
*
|
2001-04-16 |
2002-10-30 |
Univ Eindhoven Tech |
Werkwijze en inrichting voor het deponeren van een althans ten dele kristallijne siliciumlaag op een substraat.
|
|
US6623801B2
(en)
*
|
2001-07-30 |
2003-09-23 |
Komatsu Ltd. |
Method of producing high-purity polycrystalline silicon
|
|
JP3870824B2
(ja)
*
|
2001-09-11 |
2007-01-24 |
住友電気工業株式会社 |
被処理物保持体、半導体製造装置用サセプタおよび処理装置
|
|
JP2004205059A
(ja)
*
|
2002-12-20 |
2004-07-22 |
Toyo Radiator Co Ltd |
高耐蝕性熱交換器の製造方法
|
|
JP4031782B2
(ja)
*
|
2004-07-01 |
2008-01-09 |
株式会社大阪チタニウムテクノロジーズ |
多結晶シリコン製造方法およびシード保持電極
|
|
JP2007281161A
(ja)
*
|
2006-04-06 |
2007-10-25 |
Sumitomo Electric Ind Ltd |
半導体製造装置用ウエハ保持体及び半導体製造装置
|
|
US9683286B2
(en)
*
|
2006-04-28 |
2017-06-20 |
Gtat Corporation |
Increased polysilicon deposition in a CVD reactor
|