RU2503905C2 - Производственная установка для осаждения материала и электрод для использования в ней - Google Patents

Производственная установка для осаждения материала и электрод для использования в ней Download PDF

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Publication number
RU2503905C2
RU2503905C2 RU2010146244/06A RU2010146244A RU2503905C2 RU 2503905 C2 RU2503905 C2 RU 2503905C2 RU 2010146244/06 A RU2010146244/06 A RU 2010146244/06A RU 2010146244 A RU2010146244 A RU 2010146244A RU 2503905 C2 RU2503905 C2 RU 2503905C2
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RU
Russia
Prior art keywords
electrode
channel
barrel
head
carrier substrate
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RU2010146244/06A
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English (en)
Russian (ru)
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RU2010146244A (ru
Inventor
Макс ДЕХТИАР
Дэвид ХИЛЛЭБРЭНД
Теодор КНАПП
Кит МАККОЙ
Майкл МОЛНАР
Original Assignee
Хемлок Семикондактор Корпорейшн
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Publication of RU2010146244A publication Critical patent/RU2010146244A/ru
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K10/00—Welding or cutting by means of a plasma
    • B23K10/02—Plasma welding
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4418—Methods for making free-standing articles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/02—Details
    • H05B3/03—Electrodes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
RU2010146244/06A 2008-04-14 2009-04-13 Производственная установка для осаждения материала и электрод для использования в ней RU2503905C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US4466608P 2008-04-14 2008-04-14
US61/044,666 2008-04-14
PCT/US2009/002289 WO2009128886A1 (en) 2008-04-14 2009-04-13 Manufacturing apparatus for depositing a material and an electrode for use therein

Publications (2)

Publication Number Publication Date
RU2010146244A RU2010146244A (ru) 2012-05-20
RU2503905C2 true RU2503905C2 (ru) 2014-01-10

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RU2010146244/06A RU2503905C2 (ru) 2008-04-14 2009-04-13 Производственная установка для осаждения материала и электрод для использования в ней

Country Status (10)

Country Link
US (2) US20110036292A1 (enExample)
EP (1) EP2265883A1 (enExample)
JP (1) JP2011517734A (enExample)
KR (1) KR20110008078A (enExample)
CN (1) CN102047066B (enExample)
AU (1) AU2009236677B2 (enExample)
CA (1) CA2721192A1 (enExample)
RU (1) RU2503905C2 (enExample)
TW (1) TWI470718B (enExample)
WO (1) WO2009128886A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101639577B1 (ko) 2008-04-14 2016-07-14 헴로크세미컨덕터코포레이션 재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극
KR101552501B1 (ko) 2008-04-14 2015-09-14 헴로크세미컨덕터코포레이션 재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극
TWI458854B (zh) * 2008-06-23 2014-11-01 Gtat Corp 在化學氣相沉積反應器中用於管絲的夾頭及電橋之連接點
US8540818B2 (en) * 2009-04-28 2013-09-24 Mitsubishi Materials Corporation Polycrystalline silicon reactor
WO2011008849A1 (en) * 2009-07-14 2011-01-20 Hemlock Semiconductor Corporation A method of inhibiting formation of deposits in a manufacturing system
JP5579634B2 (ja) * 2011-01-24 2014-08-27 信越化学工業株式会社 多結晶シリコン製造用反応炉および多結晶シリコンの製造方法
KR20150035735A (ko) * 2012-07-10 2015-04-07 헴로크세미컨덕터코포레이션 물질을 부착하기 위한 제조 장치 및 이에 사용하기 위한 소켓
WO2014159021A1 (en) * 2013-03-12 2014-10-02 Walbro Engine Management, L.L.C. Retainer with grounding feature for fuel system component
US10450649B2 (en) 2014-01-29 2019-10-22 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance
US20160122875A1 (en) * 2014-11-05 2016-05-05 Rec Silicon Inc Chemical vapor deposition reactor with filament holding assembly
USD917680S1 (en) * 2017-09-12 2021-04-27 Ian Derek Fawn-Meade Hot water tank powered titanium anode rod
CN110524096B (zh) * 2019-08-06 2024-06-25 宝鸡鼎晟真空热技术有限公司 用于连接真空焊箱的等离子焊枪

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU245731A1 (ru) * Аппарат для осаждения материалов из газовойфазы
US4150168A (en) * 1977-03-02 1979-04-17 Kabushiki Kaisha Komatsu Seisakusho Method and apparatus for manufacturing high-purity silicon rods
US4179530A (en) * 1977-05-20 1979-12-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the deposition of pure semiconductor material
US4477911A (en) * 1982-12-02 1984-10-16 Westinghouse Electric Corp. Integral heat pipe-electrode
RU2135629C1 (ru) * 1997-11-12 1999-08-27 Государственное предприятие ВНИИавтогенмаш Способ повышения долговечности электродных и сопловых устройств и технологический плазматрон для его осуществления
RU2258764C1 (ru) * 2001-04-16 2005-08-20 Технише Университет Эйндховен Способ и устройство для осаждения по меньшей мере частично кристаллического кремниевого слоя на подложку

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1054141A (enExample) * 1900-01-01
US1738828A (en) * 1925-03-02 1929-12-10 Jackson Arthur Hews Low-resistance permanent wire
US2600823A (en) * 1949-01-15 1952-06-17 Allegheny Ludlum Steel Hot top electrode tip
US3330251A (en) * 1955-11-02 1967-07-11 Siemens Ag Apparatus for producing highest-purity silicon for electric semiconductor devices
US3011877A (en) * 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
BE564212A (enExample) * 1957-01-25
NL124690C (enExample) * 1958-05-29
DE1150366B (de) * 1958-12-09 1963-06-20 Siemens Ag Verfahren zur Herstellung von Reinstsilicium
NL251143A (enExample) * 1959-05-04
DE1155759B (de) * 1959-06-11 1963-10-17 Siemens Ag Vorrichtung zur Gewinnung reinsten kristallinen Halbleitermaterials fuer elektrotechnische Zwecke
DE1264400B (de) * 1961-01-26 1968-03-28 Siemens Ag Vorrichtung zur Gewinnung reinen Halbleitermaterials aus der Gasphase
DE1138481C2 (de) * 1961-06-09 1963-05-22 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase
DE2324365C3 (de) * 1973-05-14 1978-05-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Reaktionsgefäß zum Abscheiden von Halbleitermaterial auf erhitzte Trägerkörper
DE2652218A1 (de) * 1976-11-16 1978-05-24 Wacker Chemitronic Verfahren zur herstellung von substratgebundenem, grossflaechigem silicium
JPS53108029A (en) * 1977-03-03 1978-09-20 Komatsu Mfg Co Ltd Method of making high purity silicon having uniform shape
US4173944A (en) * 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber
DE2912661C2 (de) * 1979-03-30 1982-06-24 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren zur Abscheidung von reinem Halbleitermaterial und Düse zur Durchführung des Verfahrens
US4304641A (en) * 1980-11-24 1981-12-08 International Business Machines Corporation Rotary electroplating cell with controlled current distribution
US4481232A (en) * 1983-05-27 1984-11-06 The United States Of America As Represented By The Department Of Energy Method and apparatus for producing high purity silicon
US4466864A (en) * 1983-12-16 1984-08-21 At&T Technologies, Inc. Methods of and apparatus for electroplating preselected surface regions of electrical articles
US4822641A (en) * 1985-04-30 1989-04-18 Inovan Gmbh & Co. Kg Method of manufacturing a contact construction material structure
SE452862B (sv) * 1985-06-05 1987-12-21 Aga Ab Ljusbagselektrod
US4707225A (en) * 1986-01-06 1987-11-17 Rockwell International Corporation Fluid-cooled channel construction
US4805556A (en) * 1988-01-15 1989-02-21 Union Carbide Corporation Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane
US5096550A (en) * 1990-10-15 1992-03-17 The United States Of America As Represented By The United States Department Of Energy Method and apparatus for spatially uniform electropolishing and electrolytic etching
US5906799A (en) * 1992-06-01 1999-05-25 Hemlock Semiconductor Corporation Chlorosilane and hydrogen reactor
US5227041A (en) * 1992-06-12 1993-07-13 Digital Equipment Corporation Dry contact electroplating apparatus
DE4243570C1 (de) * 1992-12-22 1994-01-27 Heraeus Gmbh W C Elektrischer Kontaktkörper
US5422088A (en) * 1994-01-28 1995-06-06 Hemlock Semiconductor Corporation Process for hydrogenation of tetrachlorosilane
JP3377849B2 (ja) * 1994-02-02 2003-02-17 日本エレクトロプレイテイング・エンジニヤース株式会社 ウエーハ用メッキ装置
DE4424929C2 (de) * 1994-07-14 1997-02-13 Wacker Chemie Gmbh Halterung für Trägerkörper in einer Vorrichtung zur Abscheidung von Halbleitermaterial
US5567300A (en) * 1994-09-02 1996-10-22 Ibm Corporation Electrochemical metal removal technique for planarization of surfaces
FR2741227A1 (fr) * 1995-11-14 1997-05-16 Verrerie & Cristallerie Electrode, notamment destinee a etre utilisee dans des fours de fusion du verre
US5807165A (en) * 1997-03-26 1998-09-15 International Business Machines Corporation Method of electrochemical mechanical planarization
US5911619A (en) * 1997-03-26 1999-06-15 International Business Machines Corporation Apparatus for electrochemical mechanical planarization
NL1005963C2 (nl) * 1997-05-02 1998-11-09 Asm Int Verticale oven voor het behandelen van halfgeleidersubstraten.
DE19882883B4 (de) * 1997-12-15 2009-02-26 Advanced Silicon Materials LLC, (n.d.Ges.d.Staates Delaware), Moses Lake System für die chemische Abscheidung aus der Gasphase zum Herstellen polykristalliner Siliziumstangen
US6544333B2 (en) * 1997-12-15 2003-04-08 Advanced Silicon Materials Llc Chemical vapor deposition system for polycrystalline silicon rod production
US6004880A (en) * 1998-02-20 1999-12-21 Lsi Logic Corporation Method of single step damascene process for deposition and global planarization
US6176992B1 (en) * 1998-11-03 2001-01-23 Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
US6284312B1 (en) * 1999-02-19 2001-09-04 Gt Equipment Technologies Inc Method and apparatus for chemical vapor deposition of polysilicon
JP4372918B2 (ja) * 1999-06-30 2009-11-25 パナソニック電工株式会社 プラズマ処理装置及びプラズマ処理方法
JP2001156042A (ja) * 1999-11-29 2001-06-08 Hitachi Ltd プラズマ処理装置
DE10041564C2 (de) * 2000-08-24 2002-06-27 Heraeus Noblelight Gmbh Kühlbares Infrarotstrahlerelement
DE10101040A1 (de) * 2001-01-11 2002-07-25 Wacker Chemie Gmbh Vorrichtung und Verfahren zur Herstellung eines polykristallinen Siliciumstabes
JP2002231357A (ja) * 2001-02-06 2002-08-16 Nagano Fujitsu Component Kk 電気接点およびコネクタ
JP4402860B2 (ja) * 2001-03-28 2010-01-20 忠弘 大見 プラズマ処理装置
US6623801B2 (en) * 2001-07-30 2003-09-23 Komatsu Ltd. Method of producing high-purity polycrystalline silicon
JP3870824B2 (ja) * 2001-09-11 2007-01-24 住友電気工業株式会社 被処理物保持体、半導体製造装置用サセプタおよび処理装置
JP2004205059A (ja) * 2002-12-20 2004-07-22 Toyo Radiator Co Ltd 高耐蝕性熱交換器の製造方法
JP4031782B2 (ja) * 2004-07-01 2008-01-09 株式会社大阪チタニウムテクノロジーズ 多結晶シリコン製造方法およびシード保持電極
JP2007281161A (ja) * 2006-04-06 2007-10-25 Sumitomo Electric Ind Ltd 半導体製造装置用ウエハ保持体及び半導体製造装置
US9683286B2 (en) * 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU245731A1 (ru) * Аппарат для осаждения материалов из газовойфазы
US4150168A (en) * 1977-03-02 1979-04-17 Kabushiki Kaisha Komatsu Seisakusho Method and apparatus for manufacturing high-purity silicon rods
US4179530A (en) * 1977-05-20 1979-12-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the deposition of pure semiconductor material
US4477911A (en) * 1982-12-02 1984-10-16 Westinghouse Electric Corp. Integral heat pipe-electrode
RU2135629C1 (ru) * 1997-11-12 1999-08-27 Государственное предприятие ВНИИавтогенмаш Способ повышения долговечности электродных и сопловых устройств и технологический плазматрон для его осуществления
RU2258764C1 (ru) * 2001-04-16 2005-08-20 Технише Университет Эйндховен Способ и устройство для осаждения по меньшей мере частично кристаллического кремниевого слоя на подложку

Also Published As

Publication number Publication date
US20110036292A1 (en) 2011-02-17
TWI470718B (zh) 2015-01-21
RU2010146244A (ru) 2012-05-20
AU2009236677B2 (en) 2012-11-22
JP2011517734A (ja) 2011-06-16
CN102047066A (zh) 2011-05-04
EP2265883A1 (en) 2010-12-29
TW201001597A (en) 2010-01-01
KR20110008078A (ko) 2011-01-25
US20140353290A1 (en) 2014-12-04
CN102047066B (zh) 2013-01-16
AU2009236677A1 (en) 2009-10-22
WO2009128886A1 (en) 2009-10-22
CA2721192A1 (en) 2009-10-22

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Effective date: 20160414