TWI470718B - 用於沉積一物質之製造設備及使用於其中之一電極 - Google Patents
用於沉積一物質之製造設備及使用於其中之一電極 Download PDFInfo
- Publication number
- TWI470718B TWI470718B TW98112372A TW98112372A TWI470718B TW I470718 B TWI470718 B TW I470718B TW 98112372 A TW98112372 A TW 98112372A TW 98112372 A TW98112372 A TW 98112372A TW I470718 B TWI470718 B TW I470718B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- shaft
- coating
- head
- carrier
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 238000000151 deposition Methods 0.000 title claims description 18
- 239000000463 material Substances 0.000 title description 7
- 238000000576 coating method Methods 0.000 claims description 75
- 239000011248 coating agent Substances 0.000 claims description 72
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 36
- 239000002826 coolant Substances 0.000 claims description 29
- 229910052759 nickel Inorganic materials 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 17
- 239000004332 silver Substances 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 239000011651 chromium Substances 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- 230000003373 anti-fouling effect Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical class [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 239000012809 cooling fluid Substances 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 229910052500 inorganic mineral Inorganic materials 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 239000011707 mineral Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005660 chlorination reaction Methods 0.000 description 2
- 229960001701 chloroform Drugs 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000013529 heat transfer fluid Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- LTJKFDLGAFIDPW-UHFFFAOYSA-N 1,1,1-tribromodecane Chemical compound CCCCCCCCCC(Br)(Br)Br LTJKFDLGAFIDPW-UHFFFAOYSA-N 0.000 description 1
- MYMSJFSOOQERIO-UHFFFAOYSA-N 1-bromodecane Chemical compound CCCCCCCCCCBr MYMSJFSOOQERIO-UHFFFAOYSA-N 0.000 description 1
- ZTEHOZMYMCEYRM-UHFFFAOYSA-N 1-chlorodecane Chemical compound CCCCCCCCCCCl ZTEHOZMYMCEYRM-UHFFFAOYSA-N 0.000 description 1
- NZIHMSYSZRFUQJ-UHFFFAOYSA-N 6-chloro-1h-benzimidazole-2-carboxylic acid Chemical compound C1=C(Cl)C=C2NC(C(=O)O)=NC2=C1 NZIHMSYSZRFUQJ-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- IREVRWRNACELSM-UHFFFAOYSA-J ruthenium(4+);tetrachloride Chemical compound Cl[Ru](Cl)(Cl)Cl IREVRWRNACELSM-UHFFFAOYSA-J 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K10/00—Welding or cutting by means of a plasma
- B23K10/02—Plasma welding
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4418—Methods for making free-standing articles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/03—Electrodes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4466608P | 2008-04-14 | 2008-04-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201001597A TW201001597A (en) | 2010-01-01 |
| TWI470718B true TWI470718B (zh) | 2015-01-21 |
Family
ID=40756999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW98112372A TWI470718B (zh) | 2008-04-14 | 2009-04-14 | 用於沉積一物質之製造設備及使用於其中之一電極 |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US20110036292A1 (enExample) |
| EP (1) | EP2265883A1 (enExample) |
| JP (1) | JP2011517734A (enExample) |
| KR (1) | KR20110008078A (enExample) |
| CN (1) | CN102047066B (enExample) |
| AU (1) | AU2009236677B2 (enExample) |
| CA (1) | CA2721192A1 (enExample) |
| RU (1) | RU2503905C2 (enExample) |
| TW (1) | TWI470718B (enExample) |
| WO (1) | WO2009128886A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101639577B1 (ko) | 2008-04-14 | 2016-07-14 | 헴로크세미컨덕터코포레이션 | 재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극 |
| KR101552501B1 (ko) | 2008-04-14 | 2015-09-14 | 헴로크세미컨덕터코포레이션 | 재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극 |
| TWI458854B (zh) * | 2008-06-23 | 2014-11-01 | Gtat Corp | 在化學氣相沉積反應器中用於管絲的夾頭及電橋之連接點 |
| US8540818B2 (en) * | 2009-04-28 | 2013-09-24 | Mitsubishi Materials Corporation | Polycrystalline silicon reactor |
| WO2011008849A1 (en) * | 2009-07-14 | 2011-01-20 | Hemlock Semiconductor Corporation | A method of inhibiting formation of deposits in a manufacturing system |
| JP5579634B2 (ja) * | 2011-01-24 | 2014-08-27 | 信越化学工業株式会社 | 多結晶シリコン製造用反応炉および多結晶シリコンの製造方法 |
| KR20150035735A (ko) * | 2012-07-10 | 2015-04-07 | 헴로크세미컨덕터코포레이션 | 물질을 부착하기 위한 제조 장치 및 이에 사용하기 위한 소켓 |
| WO2014159021A1 (en) * | 2013-03-12 | 2014-10-02 | Walbro Engine Management, L.L.C. | Retainer with grounding feature for fuel system component |
| US10450649B2 (en) | 2014-01-29 | 2019-10-22 | Gtat Corporation | Reactor filament assembly with enhanced misalignment tolerance |
| US20160122875A1 (en) * | 2014-11-05 | 2016-05-05 | Rec Silicon Inc | Chemical vapor deposition reactor with filament holding assembly |
| USD917680S1 (en) * | 2017-09-12 | 2021-04-27 | Ian Derek Fawn-Meade | Hot water tank powered titanium anode rod |
| CN110524096B (zh) * | 2019-08-06 | 2024-06-25 | 宝鸡鼎晟真空热技术有限公司 | 用于连接真空焊箱的等离子焊枪 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001077097A (ja) * | 1999-06-30 | 2001-03-23 | Matsushita Electric Works Ltd | プラズマ処理装置及びプラズマ処理方法 |
| US20030021894A1 (en) * | 2001-07-30 | 2003-01-30 | Komatsu Ltd. | Method of producing high-purity polycrystallin silicon |
| JP2006016243A (ja) * | 2004-07-01 | 2006-01-19 | Sumitomo Titanium Corp | 多結晶シリコン製造方法およびシード保持電極 |
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| DE2652218A1 (de) * | 1976-11-16 | 1978-05-24 | Wacker Chemitronic | Verfahren zur herstellung von substratgebundenem, grossflaechigem silicium |
| JPS53106626A (en) * | 1977-03-02 | 1978-09-16 | Komatsu Mfg Co Ltd | Method of making high purity rod silicon and appratus therefor |
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-
2009
- 2009-04-13 US US12/937,790 patent/US20110036292A1/en not_active Abandoned
- 2009-04-13 CN CN200980120116.6A patent/CN102047066B/zh not_active Expired - Fee Related
- 2009-04-13 EP EP09733051A patent/EP2265883A1/en not_active Withdrawn
- 2009-04-13 CA CA2721192A patent/CA2721192A1/en not_active Abandoned
- 2009-04-13 RU RU2010146244/06A patent/RU2503905C2/ru not_active IP Right Cessation
- 2009-04-13 WO PCT/US2009/002289 patent/WO2009128886A1/en not_active Ceased
- 2009-04-13 AU AU2009236677A patent/AU2009236677B2/en not_active Ceased
- 2009-04-13 KR KR1020107024715A patent/KR20110008078A/ko not_active Ceased
- 2009-04-13 JP JP2011505004A patent/JP2011517734A/ja active Pending
- 2009-04-14 TW TW98112372A patent/TWI470718B/zh not_active IP Right Cessation
-
2014
- 2014-08-12 US US14/457,401 patent/US20140353290A1/en not_active Abandoned
Patent Citations (3)
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| JP2001077097A (ja) * | 1999-06-30 | 2001-03-23 | Matsushita Electric Works Ltd | プラズマ処理装置及びプラズマ処理方法 |
| US20030021894A1 (en) * | 2001-07-30 | 2003-01-30 | Komatsu Ltd. | Method of producing high-purity polycrystallin silicon |
| JP2006016243A (ja) * | 2004-07-01 | 2006-01-19 | Sumitomo Titanium Corp | 多結晶シリコン製造方法およびシード保持電極 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20110036292A1 (en) | 2011-02-17 |
| RU2010146244A (ru) | 2012-05-20 |
| AU2009236677B2 (en) | 2012-11-22 |
| JP2011517734A (ja) | 2011-06-16 |
| CN102047066A (zh) | 2011-05-04 |
| EP2265883A1 (en) | 2010-12-29 |
| TW201001597A (en) | 2010-01-01 |
| KR20110008078A (ko) | 2011-01-25 |
| RU2503905C2 (ru) | 2014-01-10 |
| US20140353290A1 (en) | 2014-12-04 |
| CN102047066B (zh) | 2013-01-16 |
| AU2009236677A1 (en) | 2009-10-22 |
| WO2009128886A1 (en) | 2009-10-22 |
| CA2721192A1 (en) | 2009-10-22 |
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