JP5909533B2 - 材料を蒸着するための製造装置及び当該装置において使用される電極 - Google Patents
材料を蒸着するための製造装置及び当該装置において使用される電極 Download PDFInfo
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- JP5909533B2 JP5909533B2 JP2014191023A JP2014191023A JP5909533B2 JP 5909533 B2 JP5909533 B2 JP 5909533B2 JP 2014191023 A JP2014191023 A JP 2014191023A JP 2014191023 A JP2014191023 A JP 2014191023A JP 5909533 B2 JP5909533 B2 JP 5909533B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4418—Methods for making free-standing articles
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
- C25D17/12—Shape or form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/005—Electrical coupling combined with fluidic coupling
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/03—Electrodes
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Electrochemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
- Resistance Heating (AREA)
- Electroplating Methods And Accessories (AREA)
- Control Of Resistance Heating (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Physical Vapour Deposition (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Contacts (AREA)
Description
Claims (13)
- 互いから離間され且つ各々においてソケットが配置される第1の担体端部及び第2の担体端部を備える担体において材料を蒸着するための製造装置であって、
チャンバを画定するハウジングと、
前記チャンバへと気体を導入するよう前記ハウジングを通って画定される入口と、
前記気体を前記チャンバから排出するよう前記ハウジングを通って画定される出口と、
ソケットを接続するよう適合された接触領域を備える外部表面を有する少なくとも1つの電極と、
該電極に対して電流を与えるよう該電極に対して結合される電源供給装置と、
前記接触領域の外側における前記電極の前記外部表面において配置される外部コーティングと、
前記接触領域上に設けられて、前記外部コーティングとは区別される単一かつ均一の組成を有する接触領域コーティング
を有し、
前記電極は前記ハウジングを通って配置され、該電極は、前記ソケットと結合するよう前記チャンバ内において少なくとも部分的に配置され、
前記電極はカップを画定し、前記接触領域は前記カップの一部の内部に設けられ、
前記外部コーティングは、少なくとも9×106ジーメンス/メートルの導電率、及び電解質としての室温の海水に基づいて電位列において銀より高い耐食性を備え、
前記接触領域コーティングは銀で構成される、
製造装置。 - 前記電極は更に、
第1のシャフト端部及び第2のシャフト端部を備えるシャフトと、
該シャフトの前記シャフト端部の一方において配置されるヘッドと、
を有する、
請求項1記載の製造装置。 - 前記電極の前記ヘッドは、前記接触領域を備える前記外部表面を画定する、請求項2記載の製造装置。
- 前記外部コーティングは、前記シャフト及び前記接触領域の外側における前記ヘッドのうち少なくとも1つにおいて配置される、請求項3記載の製造装置。
- 前記外部コーティングは、前記接触領域の外側における前記ヘッドにおいて配置される、請求項4記載の製造装置。
- 前記外部コーティングは更に、前記電極の前記シャフトにおいて配置され、
前記シャフトにおける前記外部コーティングは、前記ヘッドにおける前記外部コーティングとは異なる材料を有する、
請求項5記載の製造装置。 - 前記シャフトは、該シャフトの前記外部表面において配置されるコーティングを有さない、請求項2に記載の製造装置。
- 前記ヘッドは銅を有する、請求項2に記載の製造装置。
- 前記電極の前記ヘッドは、前記チャンバ内において少なくとも部分的に配置される、請求項2に記載の製造装置。
- 前記外部コーティングは、金、プラチナ、及びパラジウムのうち少なくとも1つを有する、請求項1に記載の製造装置。
- 前記外部コーティングは、0.0254乃至0.254mmの厚さを備える、請求項10に記載の製造装置。
- 前記少なくとも1つの電極は、前記担体の前記第1の担体端部において前記ソケットを受容するための第1の電極と、前記担体の前記第2の担体端部において前記ソケットを受容するための第2の電極とを有する、請求項1に記載の製造装置。
- 前記接触領域コーティングは、0.00254乃至0.254mmの厚さを備える、請求項1に記載の製造装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US4468708P | 2008-04-14 | 2008-04-14 | |
US61/044,687 | 2008-04-14 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011505007A Division JP5959198B2 (ja) | 2008-04-14 | 2009-04-13 | 材料を蒸着するための製造装置及び当該装置において使用される電極 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015028217A JP2015028217A (ja) | 2015-02-12 |
JP5909533B2 true JP5909533B2 (ja) | 2016-04-26 |
Family
ID=40791646
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011505007A Expired - Fee Related JP5959198B2 (ja) | 2008-04-14 | 2009-04-13 | 材料を蒸着するための製造装置及び当該装置において使用される電極 |
JP2014191023A Active JP5909533B2 (ja) | 2008-04-14 | 2014-09-19 | 材料を蒸着するための製造装置及び当該装置において使用される電極 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011505007A Expired - Fee Related JP5959198B2 (ja) | 2008-04-14 | 2009-04-13 | 材料を蒸着するための製造装置及び当該装置において使用される電極 |
Country Status (10)
Country | Link |
---|---|
US (2) | US8951352B2 (ja) |
EP (1) | EP2266369B1 (ja) |
JP (2) | JP5959198B2 (ja) |
KR (1) | KR101552501B1 (ja) |
CN (1) | CN102047751B (ja) |
AU (1) | AU2009236679B2 (ja) |
CA (1) | CA2721095A1 (ja) |
RU (1) | RU2494579C2 (ja) |
TW (1) | TWI505743B (ja) |
WO (1) | WO2009128888A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2266368B1 (en) | 2008-04-14 | 2018-03-28 | Hemlock Semiconductor Operations LLC | Manufacturing apparatus for depositing a material on an electrode for use therein |
US8540818B2 (en) * | 2009-04-28 | 2013-09-24 | Mitsubishi Materials Corporation | Polycrystalline silicon reactor |
JP5699060B2 (ja) * | 2011-09-20 | 2015-04-08 | 信越化学工業株式会社 | 多結晶シリコンの製造方法 |
CN107820650B (zh) | 2015-04-14 | 2022-02-18 | 安费诺有限公司 | 电连接器 |
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-
2009
- 2009-04-13 AU AU2009236679A patent/AU2009236679B2/en not_active Ceased
- 2009-04-13 US US12/937,802 patent/US8951352B2/en not_active Expired - Fee Related
- 2009-04-13 CN CN200980120357.0A patent/CN102047751B/zh not_active Expired - Fee Related
- 2009-04-13 EP EP09732543.5A patent/EP2266369B1/en not_active Not-in-force
- 2009-04-13 KR KR1020107025442A patent/KR101552501B1/ko active IP Right Grant
- 2009-04-13 CA CA2721095A patent/CA2721095A1/en not_active Abandoned
- 2009-04-13 RU RU2010146253/07A patent/RU2494579C2/ru not_active IP Right Cessation
- 2009-04-13 WO PCT/US2009/002294 patent/WO2009128888A1/en active Application Filing
- 2009-04-13 JP JP2011505007A patent/JP5959198B2/ja not_active Expired - Fee Related
- 2009-04-14 TW TW098112368A patent/TWI505743B/zh not_active IP Right Cessation
-
2014
- 2014-08-15 US US14/460,843 patent/US20140353147A1/en not_active Abandoned
- 2014-09-19 JP JP2014191023A patent/JP5909533B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
CA2721095A1 (en) | 2009-10-22 |
KR101552501B1 (ko) | 2015-09-14 |
WO2009128888A1 (en) | 2009-10-22 |
KR20110009146A (ko) | 2011-01-27 |
AU2009236679A1 (en) | 2009-10-22 |
US20140353147A1 (en) | 2014-12-04 |
US8951352B2 (en) | 2015-02-10 |
CN102047751B (zh) | 2014-01-29 |
CN102047751A (zh) | 2011-05-04 |
JP2015028217A (ja) | 2015-02-12 |
AU2009236679B2 (en) | 2014-02-27 |
TW201004460A (en) | 2010-01-16 |
TWI505743B (zh) | 2015-10-21 |
EP2266369A1 (en) | 2010-12-29 |
RU2494579C2 (ru) | 2013-09-27 |
EP2266369B1 (en) | 2017-11-22 |
JP5959198B2 (ja) | 2016-08-02 |
JP2011523758A (ja) | 2011-08-18 |
US20110036294A1 (en) | 2011-02-17 |
RU2010146253A (ru) | 2012-05-20 |
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