TWI495029B - 用於沉積一物質之製造設備及使用於其中之一電極 - Google Patents
用於沉積一物質之製造設備及使用於其中之一電極 Download PDFInfo
- Publication number
- TWI495029B TWI495029B TW098112371A TW98112371A TWI495029B TW I495029 B TWI495029 B TW I495029B TW 098112371 A TW098112371 A TW 098112371A TW 98112371 A TW98112371 A TW 98112371A TW I495029 B TWI495029 B TW I495029B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- coating
- disposed
- manufacturing apparatus
- contact area
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 42
- 238000000151 deposition Methods 0.000 title claims description 24
- 239000000463 material Substances 0.000 title description 27
- 238000000576 coating method Methods 0.000 claims description 104
- 239000011248 coating agent Substances 0.000 claims description 101
- 239000000126 substance Substances 0.000 claims description 27
- 238000005260 corrosion Methods 0.000 claims description 21
- 230000007797 corrosion Effects 0.000 claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 229910052709 silver Inorganic materials 0.000 claims description 15
- 239000004332 silver Substances 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000003792 electrolyte Substances 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 2
- 239000011247 coating layer Substances 0.000 claims 1
- 239000008151 electrolyte solution Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 230000008021 deposition Effects 0.000 description 15
- 239000007789 gas Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 239000002826 coolant Substances 0.000 description 11
- 238000011109 contamination Methods 0.000 description 9
- 230000008901 benefit Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical class [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- 230000003373 anti-fouling effect Effects 0.000 description 4
- 239000012809 cooling fluid Substances 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 239000013535 sea water Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229960001701 chloroform Drugs 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- LTJKFDLGAFIDPW-UHFFFAOYSA-N 1,1,1-tribromodecane Chemical compound CCCCCCCCCC(Br)(Br)Br LTJKFDLGAFIDPW-UHFFFAOYSA-N 0.000 description 1
- MYMSJFSOOQERIO-UHFFFAOYSA-N 1-bromodecane Chemical compound CCCCCCCCCCBr MYMSJFSOOQERIO-UHFFFAOYSA-N 0.000 description 1
- ZTEHOZMYMCEYRM-UHFFFAOYSA-N 1-chlorodecane Chemical compound CCCCCCCCCCCl ZTEHOZMYMCEYRM-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 239000013529 heat transfer fluid Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- IREVRWRNACELSM-UHFFFAOYSA-J ruthenium(4+);tetrachloride Chemical compound Cl[Ru](Cl)(Cl)Cl IREVRWRNACELSM-UHFFFAOYSA-J 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4418—Methods for making free-standing articles
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/03—Electrodes
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Resistance Heating (AREA)
- Control Of Resistance Heating (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Electroplating Methods And Accessories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4470308P | 2008-04-14 | 2008-04-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201001596A TW201001596A (en) | 2010-01-01 |
| TWI495029B true TWI495029B (zh) | 2015-08-01 |
Family
ID=40796546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098112371A TWI495029B (zh) | 2008-04-14 | 2009-04-14 | 用於沉積一物質之製造設備及使用於其中之一電極 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US8784565B2 (enExample) |
| EP (1) | EP2266368B1 (enExample) |
| JP (1) | JP5762949B2 (enExample) |
| KR (1) | KR101639577B1 (enExample) |
| CN (1) | CN102047750B (enExample) |
| AU (1) | AU2009236678B2 (enExample) |
| CA (1) | CA2721194A1 (enExample) |
| RU (1) | RU2494578C2 (enExample) |
| TW (1) | TWI495029B (enExample) |
| WO (1) | WO2009128887A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101552501B1 (ko) | 2008-04-14 | 2015-09-14 | 헴로크세미컨덕터코포레이션 | 재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극 |
| JP5627703B2 (ja) | 2009-11-18 | 2014-11-19 | アールイーシー シリコン インコーポレイテッド | 流動床反応器 |
| DE102010013043B4 (de) * | 2010-03-26 | 2013-05-29 | Centrotherm Sitec Gmbh | Elektrodenanordnung und CVD-Reaktor oder Hochtemperatur-Gasumwandler mit einer Elektrodenanordnung |
| CN102790233A (zh) * | 2011-05-20 | 2012-11-21 | 罗臬 | 液流型电化学电池 |
| JP5507505B2 (ja) * | 2011-08-01 | 2014-05-28 | 信越化学工業株式会社 | 多結晶シリコンの製造方法 |
| KR101133151B1 (ko) * | 2011-10-19 | 2012-04-06 | 주식회사 대산머트리얼즈 | 증착 공정용 전극 제조 방법 |
| KR101300779B1 (ko) * | 2011-11-08 | 2013-08-29 | (주) 인광 | 폴리실리콘 정제용 ｃｖｄ장치의 금속 전극의 재생 방법 및 이 방법으로 재생된 금속 전극 |
| TW201531440A (zh) * | 2013-12-30 | 2015-08-16 | Hemlock Semiconductor Corp | 用於耦合至設置在反應器內之電極上之插座以生長多晶矽的載體 |
| US10287679B2 (en) | 2015-05-11 | 2019-05-14 | Msp Corporation | Apparatus and method for vapor generation and film deposition |
| US11709156B2 (en) | 2017-09-18 | 2023-07-25 | Waters Technologies Corporation | Use of vapor deposition coated flow paths for improved analytical analysis |
| US11709155B2 (en) | 2017-09-18 | 2023-07-25 | Waters Technologies Corporation | Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes |
| US12181452B2 (en) | 2017-09-18 | 2024-12-31 | Waters Technologies Corporation | Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes |
| US12180581B2 (en) | 2017-09-18 | 2024-12-31 | Waters Technologies Corporation | Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes |
| CN111447982B (zh) * | 2017-10-23 | 2022-09-13 | Msp公司 | 用于蒸汽发生和薄膜沉积的设备和方法 |
| CN113507971A (zh) | 2019-02-27 | 2021-10-15 | 沃特世科技公司 | 用于最大程度减少分析物吸附的色谱密封件和经涂覆的流动路径 |
| US11918936B2 (en) | 2020-01-17 | 2024-03-05 | Waters Technologies Corporation | Performance and dynamic range for oligonucleotide bioanalysis through reduction of non specific binding |
| CN116391122A (zh) | 2020-09-24 | 2023-07-04 | 沃特世科技公司 | 用于反应性分子分离的色谱硬件改进 |
| CN113649657B (zh) * | 2021-06-01 | 2022-10-04 | 清华大学 | 一种电解加工用的纳米尺度多晶硅工具电极及其制备方法 |
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| US4822641A (en) * | 1985-04-30 | 1989-04-18 | Inovan Gmbh & Co. Kg | Method of manufacturing a contact construction material structure |
| US5438175A (en) * | 1992-12-22 | 1995-08-01 | W. C. Heraeus Gmbh | Electric outlet element having double flash |
| US20020106944A1 (en) * | 2001-02-06 | 2002-08-08 | Fujitsu Component Limited | Electric contact and electronic device |
| US20030021894A1 (en) * | 2001-07-30 | 2003-01-30 | Komatsu Ltd. | Method of producing high-purity polycrystallin silicon |
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| GB1054141A (enExample) | 1900-01-01 | |||
| US3330251A (en) * | 1955-11-02 | 1967-07-11 | Siemens Ag | Apparatus for producing highest-purity silicon for electric semiconductor devices |
| US3011877A (en) * | 1956-06-25 | 1961-12-05 | Siemens Ag | Production of high-purity semiconductor materials for electrical purposes |
| NL124690C (enExample) * | 1958-05-29 | |||
| DE1150366B (de) * | 1958-12-09 | 1963-06-20 | Siemens Ag | Verfahren zur Herstellung von Reinstsilicium |
| NL251143A (enExample) * | 1959-05-04 | |||
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| DE1264400B (de) | 1961-01-26 | 1968-03-28 | Siemens Ag | Vorrichtung zur Gewinnung reinen Halbleitermaterials aus der Gasphase |
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- 2009-04-13 KR KR1020107025227A patent/KR101639577B1/ko not_active Expired - Fee Related
- 2009-04-13 US US12/937,927 patent/US8784565B2/en not_active Expired - Fee Related
- 2009-04-13 CA CA2721194A patent/CA2721194A1/en not_active Abandoned
- 2009-04-13 CN CN2009801201109A patent/CN102047750B/zh not_active Expired - Fee Related
- 2009-04-13 RU RU2010146252/07A patent/RU2494578C2/ru not_active IP Right Cessation
- 2009-04-13 AU AU2009236678A patent/AU2009236678B2/en not_active Ceased
- 2009-04-13 WO PCT/US2009/002293 patent/WO2009128887A1/en not_active Ceased
- 2009-04-13 JP JP2011505006A patent/JP5762949B2/ja not_active Expired - Fee Related
- 2009-04-13 EP EP09732132.7A patent/EP2266368B1/en not_active Not-in-force
- 2009-04-14 TW TW098112371A patent/TWI495029B/zh not_active IP Right Cessation
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Also Published As
| Publication number | Publication date |
|---|---|
| AU2009236678A1 (en) | 2009-10-22 |
| RU2010146252A (ru) | 2012-05-20 |
| JP2011522959A (ja) | 2011-08-04 |
| WO2009128887A1 (en) | 2009-10-22 |
| EP2266368A1 (en) | 2010-12-29 |
| CA2721194A1 (en) | 2009-10-22 |
| CN102047750B (zh) | 2013-11-06 |
| TW201001596A (en) | 2010-01-01 |
| EP2266368B1 (en) | 2018-03-28 |
| RU2494578C2 (ru) | 2013-09-27 |
| KR20110008082A (ko) | 2011-01-25 |
| JP5762949B2 (ja) | 2015-08-12 |
| US20110031115A1 (en) | 2011-02-10 |
| CN102047750A (zh) | 2011-05-04 |
| US8784565B2 (en) | 2014-07-22 |
| KR101639577B1 (ko) | 2016-07-14 |
| AU2009236678B2 (en) | 2014-02-27 |
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