KR101639577B1 - 재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극 - Google Patents

재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극 Download PDF

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KR101639577B1
KR101639577B1 KR1020107025227A KR20107025227A KR101639577B1 KR 101639577 B1 KR101639577 B1 KR 101639577B1 KR 1020107025227 A KR1020107025227 A KR 1020107025227A KR 20107025227 A KR20107025227 A KR 20107025227A KR 101639577 B1 KR101639577 B1 KR 101639577B1
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South Korea
Prior art keywords
electrode
contact area
coating
disposed
carrier body
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Korean (ko)
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KR20110008082A (ko
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데이비드 힐라브랜드
데오도르 냅
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헴로크세미컨덕터코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4418—Methods for making free-standing articles
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/02—Details
    • H05B3/03—Electrodes

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Resistance Heating (AREA)
  • Control Of Resistance Heating (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Electroplating Methods And Accessories (AREA)
KR1020107025227A 2008-04-14 2009-04-13 재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극 Expired - Fee Related KR101639577B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US4470308P 2008-04-14 2008-04-14
US61/044,703 2008-04-14

Publications (2)

Publication Number Publication Date
KR20110008082A KR20110008082A (ko) 2011-01-25
KR101639577B1 true KR101639577B1 (ko) 2016-07-14

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Country Link
US (1) US8784565B2 (enExample)
EP (1) EP2266368B1 (enExample)
JP (1) JP5762949B2 (enExample)
KR (1) KR101639577B1 (enExample)
CN (1) CN102047750B (enExample)
AU (1) AU2009236678B2 (enExample)
CA (1) CA2721194A1 (enExample)
RU (1) RU2494578C2 (enExample)
TW (1) TWI495029B (enExample)
WO (1) WO2009128887A1 (enExample)

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KR101552501B1 (ko) 2008-04-14 2015-09-14 헴로크세미컨덕터코포레이션 재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극
JP5627703B2 (ja) 2009-11-18 2014-11-19 アールイーシー シリコン インコーポレイテッド 流動床反応器
DE102010013043B4 (de) * 2010-03-26 2013-05-29 Centrotherm Sitec Gmbh Elektrodenanordnung und CVD-Reaktor oder Hochtemperatur-Gasumwandler mit einer Elektrodenanordnung
CN102790233A (zh) * 2011-05-20 2012-11-21 罗臬 液流型电化学电池
JP5507505B2 (ja) * 2011-08-01 2014-05-28 信越化学工業株式会社 多結晶シリコンの製造方法
KR101133151B1 (ko) * 2011-10-19 2012-04-06 주식회사 대산머트리얼즈 증착 공정용 전극 제조 방법
KR101300779B1 (ko) * 2011-11-08 2013-08-29 (주) 인광 폴리실리콘 정제용 ｃｖｄ장치의 금속 전극의 재생 방법 및 이 방법으로 재생된 금속 전극
TW201531440A (zh) * 2013-12-30 2015-08-16 Hemlock Semiconductor Corp 用於耦合至設置在反應器內之電極上之插座以生長多晶矽的載體
US10287679B2 (en) 2015-05-11 2019-05-14 Msp Corporation Apparatus and method for vapor generation and film deposition
US11709156B2 (en) 2017-09-18 2023-07-25 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved analytical analysis
US11709155B2 (en) 2017-09-18 2023-07-25 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes
US12181452B2 (en) 2017-09-18 2024-12-31 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes
US12180581B2 (en) 2017-09-18 2024-12-31 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes
CN111447982B (zh) * 2017-10-23 2022-09-13 Msp公司 用于蒸汽发生和薄膜沉积的设备和方法
CN113507971A (zh) 2019-02-27 2021-10-15 沃特世科技公司 用于最大程度减少分析物吸附的色谱密封件和经涂覆的流动路径
US11918936B2 (en) 2020-01-17 2024-03-05 Waters Technologies Corporation Performance and dynamic range for oligonucleotide bioanalysis through reduction of non specific binding
CN116391122A (zh) 2020-09-24 2023-07-04 沃特世科技公司 用于反应性分子分离的色谱硬件改进
CN113649657B (zh) * 2021-06-01 2022-10-04 清华大学 一种电解加工用的纳米尺度多晶硅工具电极及其制备方法

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Publication number Publication date
AU2009236678A1 (en) 2009-10-22
RU2010146252A (ru) 2012-05-20
JP2011522959A (ja) 2011-08-04
WO2009128887A1 (en) 2009-10-22
TWI495029B (zh) 2015-08-01
EP2266368A1 (en) 2010-12-29
CA2721194A1 (en) 2009-10-22
CN102047750B (zh) 2013-11-06
TW201001596A (en) 2010-01-01
EP2266368B1 (en) 2018-03-28
RU2494578C2 (ru) 2013-09-27
KR20110008082A (ko) 2011-01-25
JP5762949B2 (ja) 2015-08-12
US20110031115A1 (en) 2011-02-10
CN102047750A (zh) 2011-05-04
US8784565B2 (en) 2014-07-22
AU2009236678B2 (en) 2014-02-27

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