JP2011514658A - 単一位相流体インプリント・リソグラフィ法 - Google Patents

単一位相流体インプリント・リソグラフィ法 Download PDF

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JP2011514658A
JP2011514658A JP2010545036A JP2010545036A JP2011514658A JP 2011514658 A JP2011514658 A JP 2011514658A JP 2010545036 A JP2010545036 A JP 2010545036A JP 2010545036 A JP2010545036 A JP 2010545036A JP 2011514658 A JP2011514658 A JP 2011514658A
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substrate
gas
atmosphere
high viscosity
viscosity liquid
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JP2011514658A5 (https=
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シュ，フランク・ワイ
クスナットディノヴ，ニヤズ
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モレキュラー・インプリンツ・インコーポレーテッド
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Publication of JP2011514658A5 publication Critical patent/JP2011514658A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D19/00—Degasification of liquids
    • B01D19/0005—Degasification of liquids with one or more auxiliary substances
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2010545036A 2008-02-05 2009-02-05 単一位相流体インプリント・リソグラフィ法 Pending JP2011514658A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/026,022 US8211214B2 (en) 2003-10-02 2008-02-05 Single phase fluid imprint lithography method
PCT/US2009/000743 WO2009099630A1 (en) 2008-02-05 2009-02-05 Single phase fluid imprint lithography method

Publications (2)

Publication Number Publication Date
JP2011514658A true JP2011514658A (ja) 2011-05-06
JP2011514658A5 JP2011514658A5 (https=) 2012-03-22

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JP2010545036A Pending JP2011514658A (ja) 2008-02-05 2009-02-05 単一位相流体インプリント・リソグラフィ法

Country Status (6)

Country Link
US (1) US8211214B2 (https=)
EP (1) EP2252725A4 (https=)
JP (1) JP2011514658A (https=)
KR (1) KR20100112179A (https=)
CN (1) CN101932754A (https=)
WO (1) WO2009099630A1 (https=)

Cited By (3)

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Publication number Priority date Publication date Assignee Title
KR20140116209A (ko) 2012-02-27 2014-10-01 캐논 가부시끼가이샤 임프린트 장치 및 임프린트 방법 그리고 물품 제조 방법
KR20180125389A (ko) 2017-05-15 2018-11-23 캐논 가부시끼가이샤 임프린트 장치 및 물품 제조 방법
US10481490B2 (en) 2015-11-09 2019-11-19 Canon Kabushiki Kaisha Imprint apparatus, and method of manufacturing article

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US20060062922A1 (en) 2004-09-23 2006-03-23 Molecular Imprints, Inc. Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor
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US7670530B2 (en) 2006-01-20 2010-03-02 Molecular Imprints, Inc. Patterning substrates employing multiple chucks
US8012395B2 (en) 2006-04-18 2011-09-06 Molecular Imprints, Inc. Template having alignment marks formed of contrast material
US8215946B2 (en) 2006-05-18 2012-07-10 Molecular Imprints, Inc. Imprint lithography system and method
US20080303187A1 (en) * 2006-12-29 2008-12-11 Molecular Imprints, Inc. Imprint Fluid Control
US20090014917A1 (en) * 2007-07-10 2009-01-15 Molecular Imprints, Inc. Drop Pattern Generation for Imprint Lithography
US8119052B2 (en) * 2007-11-02 2012-02-21 Molecular Imprints, Inc. Drop pattern generation for imprint lithography
US8945444B2 (en) * 2007-12-04 2015-02-03 Canon Nanotechnologies, Inc. High throughput imprint based on contact line motion tracking control
US8361371B2 (en) * 2008-02-08 2013-01-29 Molecular Imprints, Inc. Extrusion reduction in imprint lithography
US8187515B2 (en) * 2008-04-01 2012-05-29 Molecular Imprints, Inc. Large area roll-to-roll imprint lithography
US8795572B2 (en) * 2008-04-17 2014-08-05 Massachusetts Institute Of Technology Symmetric thermocentric flexure with minimal yaw error motion
US8512797B2 (en) * 2008-10-21 2013-08-20 Molecular Imprints, Inc. Drop pattern generation with edge weighting
US8586126B2 (en) 2008-10-21 2013-11-19 Molecular Imprints, Inc. Robust optimization to generate drop patterns in imprint lithography which are tolerant of variations in drop volume and drop placement
JP2011023660A (ja) * 2009-07-17 2011-02-03 Toshiba Corp パターン転写方法
JP5491931B2 (ja) * 2010-03-30 2014-05-14 富士フイルム株式会社 ナノインプリント方法およびモールド製造方法
JP5828626B2 (ja) * 2010-10-04 2015-12-09 キヤノン株式会社 インプリント方法
WO2012083578A1 (zh) * 2010-12-22 2012-06-28 青岛理工大学 整片晶圆纳米压印的装置和方法.
KR20130085759A (ko) 2012-01-20 2013-07-30 삼성전자주식회사 스탬프 및 그 제조 방법 및 이를 이용한 임프린트 방법
JP6304921B2 (ja) * 2012-06-05 2018-04-04 キヤノン株式会社 インプリント方法およびインプリント装置、それを用いた物品の製造方法
US20130337176A1 (en) * 2012-06-19 2013-12-19 Seagate Technology Llc Nano-scale void reduction
US11669009B2 (en) 2016-08-03 2023-06-06 Board Of Regents, The University Of Texas System Roll-to-roll programmable film imprint lithography
CN109804275B (zh) * 2016-08-26 2023-08-25 分子印记公司 制造单片光子器件的方法、光子器件
US10895806B2 (en) * 2017-09-29 2021-01-19 Canon Kabushiki Kaisha Imprinting method and apparatus
CN112657794A (zh) * 2020-05-13 2021-04-16 绍兴权电科技有限公司 基于充气式的多工位防伪贴印刷方法

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