JP2011512627A5 - - Google Patents

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Publication number
JP2011512627A5
JP2011512627A5 JP2010546894A JP2010546894A JP2011512627A5 JP 2011512627 A5 JP2011512627 A5 JP 2011512627A5 JP 2010546894 A JP2010546894 A JP 2010546894A JP 2010546894 A JP2010546894 A JP 2010546894A JP 2011512627 A5 JP2011512627 A5 JP 2011512627A5
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Japan
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detection system
present disclosure
transmission state
particles
detection
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JP2010546894A
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English (en)
Japanese (ja)
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JP5547658B2 (ja
JP2011512627A (ja
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Priority claimed from US12/031,643 external-priority patent/US8097866B2/en
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JP2010546894A 2008-02-14 2009-02-12 ビームの特性を測定するための装置及びその方法 Active JP5547658B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/031,643 2008-02-14
US12/031,643 US8097866B2 (en) 2008-02-14 2008-02-14 Apparatus for measuring beam characteristics and a method thereof
PCT/US2009/033933 WO2009102875A2 (en) 2008-02-14 2009-02-12 Apparatus for measuring beam characteristics and a method thereof

Publications (3)

Publication Number Publication Date
JP2011512627A JP2011512627A (ja) 2011-04-21
JP2011512627A5 true JP2011512627A5 (enExample) 2012-03-01
JP5547658B2 JP5547658B2 (ja) 2014-07-16

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ID=40954239

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JP2010546894A Active JP5547658B2 (ja) 2008-02-14 2009-02-12 ビームの特性を測定するための装置及びその方法

Country Status (6)

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US (1) US8097866B2 (enExample)
JP (1) JP5547658B2 (enExample)
KR (1) KR101568004B1 (enExample)
CN (1) CN101952942B (enExample)
TW (1) TWI443706B (enExample)
WO (1) WO2009102875A2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2915577B2 (ja) 1993-03-16 1999-07-05 三菱重工業株式会社 ヘリコプタ
US8698107B2 (en) * 2011-01-10 2014-04-15 Varian Semiconductor Equipment Associates, Inc. Technique and apparatus for monitoring ion mass, energy, and angle in processing systems
DE102011018613B4 (de) * 2011-04-21 2016-05-12 Gsi Helmholtzzentrum Für Schwerionenforschung Gmbh Bestrahlungsanlage mit mehreren einstellbaren Messbereichen einer Strahlmonitoreinrichtung und Steuerverfahren für diese Bestrahlungsanlage
US9269536B2 (en) * 2012-04-17 2016-02-23 Varian Semiconductor Equipment Associates, Inc. Double ended electrode manipulator
JP7132847B2 (ja) * 2018-12-28 2022-09-07 住友重機械イオンテクノロジー株式会社 イオン注入装置および測定装置

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4234797A (en) * 1979-05-23 1980-11-18 Nova Associates, Inc. Treating workpieces with beams
US4786814A (en) * 1983-09-16 1988-11-22 General Electric Company Method of reducing electrostatic charge on ion-implanted devices
US4751393A (en) * 1986-05-16 1988-06-14 Varian Associates, Inc. Dose measurement and uniformity monitoring system for ion implantation
JPS63216254A (ja) * 1987-03-04 1988-09-08 Seiko Instr & Electronics Ltd イオンビ−ムモニタ−用フアラデ−カツプ
US4943728A (en) * 1989-02-28 1990-07-24 Eaton Corporation Beam pattern control system for an ion implanter
JPH04112441A (ja) * 1990-08-31 1992-04-14 Toshiba Corp イオン注入装置及びそのクリーニング方法
US5583427A (en) * 1992-12-28 1996-12-10 Regents Of The University Of California Tomographic determination of the power distribution in electron beams
US5554926A (en) * 1994-08-01 1996-09-10 Regents Of The University Of California Modified Faraday cup
KR100219411B1 (ko) * 1995-11-24 1999-09-01 윤종용 반도체 이온주입설비의 패러데이컵 어셈블리
US5757018A (en) * 1995-12-11 1998-05-26 Varian Associates, Inc. Zero deflection magnetically-suppressed Faraday for ion implanters
FR2749402B1 (fr) * 1996-05-29 1998-08-07 Charpak Georges Dispositif d'imagerie radiographique a haute resolution
JP2000294180A (ja) 1999-04-06 2000-10-20 Nissin High Voltage Co Ltd ビーム電流検出機能付きビームプロファイルモニタ
US6300755B1 (en) * 1999-05-26 2001-10-09 Regents Of The University Of California Enhanced modified faraday cup for determination of power density distribution of electron beams
US6723998B2 (en) * 2000-09-15 2004-04-20 Varian Semiconductor Equipment Associates, Inc. Faraday system for ion implanters
US6690022B2 (en) * 2001-01-17 2004-02-10 Varian Semiconductor Equipment Associates, Inc. Ion beam incidence angle and beam divergence monitor
GB0107551D0 (en) * 2001-03-27 2001-05-16 Matra Bae Dynamics Uk Ltd Radiation monitor
KR100407579B1 (ko) * 2001-11-22 2003-11-28 삼성전자주식회사 이온 주입 시스템의 웨이퍼 홀딩 장치
US6956223B2 (en) * 2002-04-10 2005-10-18 Applied Materials, Inc. Multi-directional scanning of movable member and ion beam monitoring arrangement therefor
KR100444201B1 (ko) * 2002-04-18 2004-08-16 삼성전자주식회사 이온빔 경사각 측정방법 및 장치
US6828572B2 (en) * 2003-04-01 2004-12-07 Axcelis Technologies, Inc. Ion beam incident angle detector for ion implant systems
DE10329383B4 (de) * 2003-06-30 2006-07-27 Advanced Micro Devices, Inc., Sunnyvale Ionenstrahldetektor für Ionenimplantationsanlagen, Faraday-Behälter dafür und Verfahren zur Steuerung der Eigenschaften eines Ionenstrahls mittels des Ionenstrahldetektors
DE10329388B4 (de) * 2003-06-30 2006-12-28 Advanced Micro Devices, Inc., Sunnyvale Faraday-Anordnung als Ionenstrahlmessvorrichtung für eine Ionenimplantationsanlage und Verfahren zu deren Betrieb
GB2427508B (en) * 2004-01-06 2008-06-25 Applied Materials Inc Ion beam monitoring arrangement
JP2005317412A (ja) * 2004-04-30 2005-11-10 Riipuru:Kk 電子ビームの強度分布測定方法及び強度分布測定装置
KR100594272B1 (ko) * 2004-05-07 2006-06-30 삼성전자주식회사 이동형 이온 빔 경사각 측정장치 및 그 장치를 이용한이온 빔 경사각 측정방법
US7338683B2 (en) * 2004-05-10 2008-03-04 Superpower, Inc. Superconductor fabrication processes
US6992310B1 (en) * 2004-08-13 2006-01-31 Axcelis Technologies, Inc. Scanning systems and methods for providing ions from an ion beam to a workpiece
KR100642641B1 (ko) * 2005-03-11 2006-11-10 삼성전자주식회사 중성빔 각도분포 측정 장치
US7394073B2 (en) * 2005-04-05 2008-07-01 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for ion beam angle measurement in two dimensions
US7459703B2 (en) * 2005-08-31 2008-12-02 Varian Semiconductor Equipment Associates, Inc. Ion implant beam angle integrity monitoring and adjusting
KR100679263B1 (ko) * 2005-09-22 2007-02-05 삼성전자주식회사 페러데이 시스템 및 그를 이용한 이온주입설비
US7342239B2 (en) * 2005-11-29 2008-03-11 United Microelectronics Corp. Ion implanation method and device using thereof
US7435977B2 (en) * 2005-12-12 2008-10-14 Axcelis Technologies, Inc. Ion beam angle measurement systems and methods for ion implantation systems
US7476876B2 (en) * 2005-12-21 2009-01-13 Axcelis Technologies, Inc. Ion beam angle measurement systems and methods employing varied angle slot arrays for ion implantation systems
US7476849B2 (en) * 2006-03-10 2009-01-13 Varian Semiconductor Equipment Associates, Inc. Technique for monitoring and controlling a plasma process
US20080169435A1 (en) * 2007-01-12 2008-07-17 Applied Materials, Inc. Ion beam monitoring arrangement

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