JP5547658B2 - ビームの特性を測定するための装置及びその方法 - Google Patents

ビームの特性を測定するための装置及びその方法 Download PDF

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Publication number
JP5547658B2
JP5547658B2 JP2010546894A JP2010546894A JP5547658B2 JP 5547658 B2 JP5547658 B2 JP 5547658B2 JP 2010546894 A JP2010546894 A JP 2010546894A JP 2010546894 A JP2010546894 A JP 2010546894A JP 5547658 B2 JP5547658 B2 JP 5547658B2
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particles
particle
magnetic field
detector
particle beam
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Japanese (ja)
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JP2011512627A (ja
JP2011512627A5 (enExample
Inventor
シー オルソン ジョセフ
ガプタ アトゥル
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ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2446—Position sensitive detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24528—Direction of beam or parts thereof in view of the optical axis, e.g. beam angle, angular distribution, beam divergence, beam convergence or beam landing angle on sample or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24542—Beam profile

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measurement Of Radiation (AREA)
JP2010546894A 2008-02-14 2009-02-12 ビームの特性を測定するための装置及びその方法 Active JP5547658B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/031,643 2008-02-14
US12/031,643 US8097866B2 (en) 2008-02-14 2008-02-14 Apparatus for measuring beam characteristics and a method thereof
PCT/US2009/033933 WO2009102875A2 (en) 2008-02-14 2009-02-12 Apparatus for measuring beam characteristics and a method thereof

Publications (3)

Publication Number Publication Date
JP2011512627A JP2011512627A (ja) 2011-04-21
JP2011512627A5 JP2011512627A5 (enExample) 2012-03-01
JP5547658B2 true JP5547658B2 (ja) 2014-07-16

Family

ID=40954239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010546894A Active JP5547658B2 (ja) 2008-02-14 2009-02-12 ビームの特性を測定するための装置及びその方法

Country Status (6)

Country Link
US (1) US8097866B2 (enExample)
JP (1) JP5547658B2 (enExample)
KR (1) KR101568004B1 (enExample)
CN (1) CN101952942B (enExample)
TW (1) TWI443706B (enExample)
WO (1) WO2009102875A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2915577B2 (ja) 1993-03-16 1999-07-05 三菱重工業株式会社 ヘリコプタ

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US8698107B2 (en) * 2011-01-10 2014-04-15 Varian Semiconductor Equipment Associates, Inc. Technique and apparatus for monitoring ion mass, energy, and angle in processing systems
DE102011018613B4 (de) * 2011-04-21 2016-05-12 Gsi Helmholtzzentrum Für Schwerionenforschung Gmbh Bestrahlungsanlage mit mehreren einstellbaren Messbereichen einer Strahlmonitoreinrichtung und Steuerverfahren für diese Bestrahlungsanlage
US9269536B2 (en) * 2012-04-17 2016-02-23 Varian Semiconductor Equipment Associates, Inc. Double ended electrode manipulator
JP7132847B2 (ja) * 2018-12-28 2022-09-07 住友重機械イオンテクノロジー株式会社 イオン注入装置および測定装置

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US4786814A (en) * 1983-09-16 1988-11-22 General Electric Company Method of reducing electrostatic charge on ion-implanted devices
US4751393A (en) * 1986-05-16 1988-06-14 Varian Associates, Inc. Dose measurement and uniformity monitoring system for ion implantation
JPS63216254A (ja) * 1987-03-04 1988-09-08 Seiko Instr & Electronics Ltd イオンビ−ムモニタ−用フアラデ−カツプ
US4943728A (en) * 1989-02-28 1990-07-24 Eaton Corporation Beam pattern control system for an ion implanter
JPH04112441A (ja) * 1990-08-31 1992-04-14 Toshiba Corp イオン注入装置及びそのクリーニング方法
US5583427A (en) * 1992-12-28 1996-12-10 Regents Of The University Of California Tomographic determination of the power distribution in electron beams
US5554926A (en) * 1994-08-01 1996-09-10 Regents Of The University Of California Modified Faraday cup
KR100219411B1 (ko) * 1995-11-24 1999-09-01 윤종용 반도체 이온주입설비의 패러데이컵 어셈블리
US5757018A (en) * 1995-12-11 1998-05-26 Varian Associates, Inc. Zero deflection magnetically-suppressed Faraday for ion implanters
FR2749402B1 (fr) * 1996-05-29 1998-08-07 Charpak Georges Dispositif d'imagerie radiographique a haute resolution
JP2000294180A (ja) 1999-04-06 2000-10-20 Nissin High Voltage Co Ltd ビーム電流検出機能付きビームプロファイルモニタ
US6300755B1 (en) * 1999-05-26 2001-10-09 Regents Of The University Of California Enhanced modified faraday cup for determination of power density distribution of electron beams
US6723998B2 (en) * 2000-09-15 2004-04-20 Varian Semiconductor Equipment Associates, Inc. Faraday system for ion implanters
US6690022B2 (en) * 2001-01-17 2004-02-10 Varian Semiconductor Equipment Associates, Inc. Ion beam incidence angle and beam divergence monitor
GB0107551D0 (en) * 2001-03-27 2001-05-16 Matra Bae Dynamics Uk Ltd Radiation monitor
KR100407579B1 (ko) * 2001-11-22 2003-11-28 삼성전자주식회사 이온 주입 시스템의 웨이퍼 홀딩 장치
US6956223B2 (en) * 2002-04-10 2005-10-18 Applied Materials, Inc. Multi-directional scanning of movable member and ion beam monitoring arrangement therefor
KR100444201B1 (ko) * 2002-04-18 2004-08-16 삼성전자주식회사 이온빔 경사각 측정방법 및 장치
US6828572B2 (en) * 2003-04-01 2004-12-07 Axcelis Technologies, Inc. Ion beam incident angle detector for ion implant systems
DE10329383B4 (de) * 2003-06-30 2006-07-27 Advanced Micro Devices, Inc., Sunnyvale Ionenstrahldetektor für Ionenimplantationsanlagen, Faraday-Behälter dafür und Verfahren zur Steuerung der Eigenschaften eines Ionenstrahls mittels des Ionenstrahldetektors
DE10329388B4 (de) * 2003-06-30 2006-12-28 Advanced Micro Devices, Inc., Sunnyvale Faraday-Anordnung als Ionenstrahlmessvorrichtung für eine Ionenimplantationsanlage und Verfahren zu deren Betrieb
GB2427508B (en) * 2004-01-06 2008-06-25 Applied Materials Inc Ion beam monitoring arrangement
JP2005317412A (ja) * 2004-04-30 2005-11-10 Riipuru:Kk 電子ビームの強度分布測定方法及び強度分布測定装置
KR100594272B1 (ko) * 2004-05-07 2006-06-30 삼성전자주식회사 이동형 이온 빔 경사각 측정장치 및 그 장치를 이용한이온 빔 경사각 측정방법
US7338683B2 (en) * 2004-05-10 2008-03-04 Superpower, Inc. Superconductor fabrication processes
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US7394073B2 (en) * 2005-04-05 2008-07-01 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for ion beam angle measurement in two dimensions
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US7342239B2 (en) * 2005-11-29 2008-03-11 United Microelectronics Corp. Ion implanation method and device using thereof
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US20080169435A1 (en) * 2007-01-12 2008-07-17 Applied Materials, Inc. Ion beam monitoring arrangement

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2915577B2 (ja) 1993-03-16 1999-07-05 三菱重工業株式会社 ヘリコプタ

Also Published As

Publication number Publication date
US20090206273A1 (en) 2009-08-20
KR20100138916A (ko) 2010-12-31
CN101952942B (zh) 2013-10-23
WO2009102875A3 (en) 2009-11-05
CN101952942A (zh) 2011-01-19
US8097866B2 (en) 2012-01-17
TWI443706B (zh) 2014-07-01
WO2009102875A2 (en) 2009-08-20
JP2011512627A (ja) 2011-04-21
TW200952024A (en) 2009-12-16
KR101568004B1 (ko) 2015-11-10

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