TWI443706B - 基板處理系統、粒子處理系統及測量粒子束特性的裝置及其方法 - Google Patents

基板處理系統、粒子處理系統及測量粒子束特性的裝置及其方法 Download PDF

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Publication number
TWI443706B
TWI443706B TW098104476A TW98104476A TWI443706B TW I443706 B TWI443706 B TW I443706B TW 098104476 A TW098104476 A TW 098104476A TW 98104476 A TW98104476 A TW 98104476A TW I443706 B TWI443706 B TW I443706B
Authority
TW
Taiwan
Prior art keywords
particle beam
particle
particles
detector
measuring
Prior art date
Application number
TW098104476A
Other languages
English (en)
Chinese (zh)
Other versions
TW200952024A (en
Inventor
Joseph C Olson
Atul Gupta
Original Assignee
Varian Semiconductor Equipment
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment filed Critical Varian Semiconductor Equipment
Publication of TW200952024A publication Critical patent/TW200952024A/zh
Application granted granted Critical
Publication of TWI443706B publication Critical patent/TWI443706B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2446—Position sensitive detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24528—Direction of beam or parts thereof in view of the optical axis, e.g. beam angle, angular distribution, beam divergence, beam convergence or beam landing angle on sample or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24542—Beam profile

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measurement Of Radiation (AREA)
TW098104476A 2008-02-14 2009-02-12 基板處理系統、粒子處理系統及測量粒子束特性的裝置及其方法 TWI443706B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/031,643 US8097866B2 (en) 2008-02-14 2008-02-14 Apparatus for measuring beam characteristics and a method thereof

Publications (2)

Publication Number Publication Date
TW200952024A TW200952024A (en) 2009-12-16
TWI443706B true TWI443706B (zh) 2014-07-01

Family

ID=40954239

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098104476A TWI443706B (zh) 2008-02-14 2009-02-12 基板處理系統、粒子處理系統及測量粒子束特性的裝置及其方法

Country Status (6)

Country Link
US (1) US8097866B2 (enExample)
JP (1) JP5547658B2 (enExample)
KR (1) KR101568004B1 (enExample)
CN (1) CN101952942B (enExample)
TW (1) TWI443706B (enExample)
WO (1) WO2009102875A2 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2915577B2 (ja) 1993-03-16 1999-07-05 三菱重工業株式会社 ヘリコプタ
US8698107B2 (en) * 2011-01-10 2014-04-15 Varian Semiconductor Equipment Associates, Inc. Technique and apparatus for monitoring ion mass, energy, and angle in processing systems
DE102011018613B4 (de) * 2011-04-21 2016-05-12 Gsi Helmholtzzentrum Für Schwerionenforschung Gmbh Bestrahlungsanlage mit mehreren einstellbaren Messbereichen einer Strahlmonitoreinrichtung und Steuerverfahren für diese Bestrahlungsanlage
US9269536B2 (en) * 2012-04-17 2016-02-23 Varian Semiconductor Equipment Associates, Inc. Double ended electrode manipulator
JP7132847B2 (ja) * 2018-12-28 2022-09-07 住友重機械イオンテクノロジー株式会社 イオン注入装置および測定装置

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US4234797A (en) * 1979-05-23 1980-11-18 Nova Associates, Inc. Treating workpieces with beams
US4786814A (en) * 1983-09-16 1988-11-22 General Electric Company Method of reducing electrostatic charge on ion-implanted devices
US4751393A (en) * 1986-05-16 1988-06-14 Varian Associates, Inc. Dose measurement and uniformity monitoring system for ion implantation
JPS63216254A (ja) * 1987-03-04 1988-09-08 Seiko Instr & Electronics Ltd イオンビ−ムモニタ−用フアラデ−カツプ
US4943728A (en) * 1989-02-28 1990-07-24 Eaton Corporation Beam pattern control system for an ion implanter
JPH04112441A (ja) * 1990-08-31 1992-04-14 Toshiba Corp イオン注入装置及びそのクリーニング方法
US5583427A (en) * 1992-12-28 1996-12-10 Regents Of The University Of California Tomographic determination of the power distribution in electron beams
US5554926A (en) * 1994-08-01 1996-09-10 Regents Of The University Of California Modified Faraday cup
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US5757018A (en) * 1995-12-11 1998-05-26 Varian Associates, Inc. Zero deflection magnetically-suppressed Faraday for ion implanters
FR2749402B1 (fr) * 1996-05-29 1998-08-07 Charpak Georges Dispositif d'imagerie radiographique a haute resolution
JP2000294180A (ja) 1999-04-06 2000-10-20 Nissin High Voltage Co Ltd ビーム電流検出機能付きビームプロファイルモニタ
US6300755B1 (en) * 1999-05-26 2001-10-09 Regents Of The University Of California Enhanced modified faraday cup for determination of power density distribution of electron beams
US6723998B2 (en) * 2000-09-15 2004-04-20 Varian Semiconductor Equipment Associates, Inc. Faraday system for ion implanters
US6690022B2 (en) * 2001-01-17 2004-02-10 Varian Semiconductor Equipment Associates, Inc. Ion beam incidence angle and beam divergence monitor
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US6956223B2 (en) * 2002-04-10 2005-10-18 Applied Materials, Inc. Multi-directional scanning of movable member and ion beam monitoring arrangement therefor
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US6828572B2 (en) * 2003-04-01 2004-12-07 Axcelis Technologies, Inc. Ion beam incident angle detector for ion implant systems
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US7394073B2 (en) * 2005-04-05 2008-07-01 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for ion beam angle measurement in two dimensions
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Also Published As

Publication number Publication date
US20090206273A1 (en) 2009-08-20
KR20100138916A (ko) 2010-12-31
CN101952942B (zh) 2013-10-23
WO2009102875A3 (en) 2009-11-05
CN101952942A (zh) 2011-01-19
US8097866B2 (en) 2012-01-17
JP5547658B2 (ja) 2014-07-16
WO2009102875A2 (en) 2009-08-20
JP2011512627A (ja) 2011-04-21
TW200952024A (en) 2009-12-16
KR101568004B1 (ko) 2015-11-10

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