CN101952942B - 测量粒子束特性的装置、系统及其方法 - Google Patents

测量粒子束特性的装置、系统及其方法 Download PDF

Info

Publication number
CN101952942B
CN101952942B CN200980105055.6A CN200980105055A CN101952942B CN 101952942 B CN101952942 B CN 101952942B CN 200980105055 A CN200980105055 A CN 200980105055A CN 101952942 B CN101952942 B CN 101952942B
Authority
CN
China
Prior art keywords
particle
particle beam
particles
detector
exit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN200980105055.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN101952942A (zh
Inventor
约瑟·C·欧尔森
阿塔尔·古普塔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Semiconductor Equipment Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Publication of CN101952942A publication Critical patent/CN101952942A/zh
Application granted granted Critical
Publication of CN101952942B publication Critical patent/CN101952942B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2446—Position sensitive detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24528—Direction of beam or parts thereof in view of the optical axis, e.g. beam angle, angular distribution, beam divergence, beam convergence or beam landing angle on sample or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24542—Beam profile

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measurement Of Radiation (AREA)
CN200980105055.6A 2008-02-14 2009-02-12 测量粒子束特性的装置、系统及其方法 Active CN101952942B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/031,643 2008-02-14
US12/031,643 US8097866B2 (en) 2008-02-14 2008-02-14 Apparatus for measuring beam characteristics and a method thereof
PCT/US2009/033933 WO2009102875A2 (en) 2008-02-14 2009-02-12 Apparatus for measuring beam characteristics and a method thereof

Publications (2)

Publication Number Publication Date
CN101952942A CN101952942A (zh) 2011-01-19
CN101952942B true CN101952942B (zh) 2013-10-23

Family

ID=40954239

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980105055.6A Active CN101952942B (zh) 2008-02-14 2009-02-12 测量粒子束特性的装置、系统及其方法

Country Status (6)

Country Link
US (1) US8097866B2 (enExample)
JP (1) JP5547658B2 (enExample)
KR (1) KR101568004B1 (enExample)
CN (1) CN101952942B (enExample)
TW (1) TWI443706B (enExample)
WO (1) WO2009102875A2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2915577B2 (ja) 1993-03-16 1999-07-05 三菱重工業株式会社 ヘリコプタ
US8698107B2 (en) * 2011-01-10 2014-04-15 Varian Semiconductor Equipment Associates, Inc. Technique and apparatus for monitoring ion mass, energy, and angle in processing systems
DE102011018613B4 (de) * 2011-04-21 2016-05-12 Gsi Helmholtzzentrum Für Schwerionenforschung Gmbh Bestrahlungsanlage mit mehreren einstellbaren Messbereichen einer Strahlmonitoreinrichtung und Steuerverfahren für diese Bestrahlungsanlage
US9269536B2 (en) * 2012-04-17 2016-02-23 Varian Semiconductor Equipment Associates, Inc. Double ended electrode manipulator
JP7132847B2 (ja) * 2018-12-28 2022-09-07 住友重機械イオンテクノロジー株式会社 イオン注入装置および測定装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5757018A (en) * 1995-12-11 1998-05-26 Varian Associates, Inc. Zero deflection magnetically-suppressed Faraday for ion implanters
CN1937166A (zh) * 2005-09-22 2007-03-28 三星电子株式会社 法拉第系统和包括该法拉第系统的离子注入设备

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4234797A (en) * 1979-05-23 1980-11-18 Nova Associates, Inc. Treating workpieces with beams
US4786814A (en) * 1983-09-16 1988-11-22 General Electric Company Method of reducing electrostatic charge on ion-implanted devices
US4751393A (en) * 1986-05-16 1988-06-14 Varian Associates, Inc. Dose measurement and uniformity monitoring system for ion implantation
JPS63216254A (ja) * 1987-03-04 1988-09-08 Seiko Instr & Electronics Ltd イオンビ−ムモニタ−用フアラデ−カツプ
US4943728A (en) * 1989-02-28 1990-07-24 Eaton Corporation Beam pattern control system for an ion implanter
JPH04112441A (ja) * 1990-08-31 1992-04-14 Toshiba Corp イオン注入装置及びそのクリーニング方法
US5583427A (en) * 1992-12-28 1996-12-10 Regents Of The University Of California Tomographic determination of the power distribution in electron beams
US5554926A (en) * 1994-08-01 1996-09-10 Regents Of The University Of California Modified Faraday cup
KR100219411B1 (ko) * 1995-11-24 1999-09-01 윤종용 반도체 이온주입설비의 패러데이컵 어셈블리
FR2749402B1 (fr) * 1996-05-29 1998-08-07 Charpak Georges Dispositif d'imagerie radiographique a haute resolution
JP2000294180A (ja) 1999-04-06 2000-10-20 Nissin High Voltage Co Ltd ビーム電流検出機能付きビームプロファイルモニタ
US6300755B1 (en) * 1999-05-26 2001-10-09 Regents Of The University Of California Enhanced modified faraday cup for determination of power density distribution of electron beams
US6723998B2 (en) * 2000-09-15 2004-04-20 Varian Semiconductor Equipment Associates, Inc. Faraday system for ion implanters
US6690022B2 (en) * 2001-01-17 2004-02-10 Varian Semiconductor Equipment Associates, Inc. Ion beam incidence angle and beam divergence monitor
GB0107551D0 (en) * 2001-03-27 2001-05-16 Matra Bae Dynamics Uk Ltd Radiation monitor
KR100407579B1 (ko) * 2001-11-22 2003-11-28 삼성전자주식회사 이온 주입 시스템의 웨이퍼 홀딩 장치
US6956223B2 (en) * 2002-04-10 2005-10-18 Applied Materials, Inc. Multi-directional scanning of movable member and ion beam monitoring arrangement therefor
KR100444201B1 (ko) * 2002-04-18 2004-08-16 삼성전자주식회사 이온빔 경사각 측정방법 및 장치
US6828572B2 (en) * 2003-04-01 2004-12-07 Axcelis Technologies, Inc. Ion beam incident angle detector for ion implant systems
DE10329383B4 (de) * 2003-06-30 2006-07-27 Advanced Micro Devices, Inc., Sunnyvale Ionenstrahldetektor für Ionenimplantationsanlagen, Faraday-Behälter dafür und Verfahren zur Steuerung der Eigenschaften eines Ionenstrahls mittels des Ionenstrahldetektors
DE10329388B4 (de) * 2003-06-30 2006-12-28 Advanced Micro Devices, Inc., Sunnyvale Faraday-Anordnung als Ionenstrahlmessvorrichtung für eine Ionenimplantationsanlage und Verfahren zu deren Betrieb
GB2427508B (en) * 2004-01-06 2008-06-25 Applied Materials Inc Ion beam monitoring arrangement
JP2005317412A (ja) * 2004-04-30 2005-11-10 Riipuru:Kk 電子ビームの強度分布測定方法及び強度分布測定装置
KR100594272B1 (ko) * 2004-05-07 2006-06-30 삼성전자주식회사 이동형 이온 빔 경사각 측정장치 및 그 장치를 이용한이온 빔 경사각 측정방법
US7338683B2 (en) * 2004-05-10 2008-03-04 Superpower, Inc. Superconductor fabrication processes
US6992310B1 (en) * 2004-08-13 2006-01-31 Axcelis Technologies, Inc. Scanning systems and methods for providing ions from an ion beam to a workpiece
KR100642641B1 (ko) * 2005-03-11 2006-11-10 삼성전자주식회사 중성빔 각도분포 측정 장치
US7394073B2 (en) * 2005-04-05 2008-07-01 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for ion beam angle measurement in two dimensions
US7459703B2 (en) * 2005-08-31 2008-12-02 Varian Semiconductor Equipment Associates, Inc. Ion implant beam angle integrity monitoring and adjusting
US7342239B2 (en) * 2005-11-29 2008-03-11 United Microelectronics Corp. Ion implanation method and device using thereof
US7435977B2 (en) * 2005-12-12 2008-10-14 Axcelis Technologies, Inc. Ion beam angle measurement systems and methods for ion implantation systems
US7476876B2 (en) * 2005-12-21 2009-01-13 Axcelis Technologies, Inc. Ion beam angle measurement systems and methods employing varied angle slot arrays for ion implantation systems
US7476849B2 (en) * 2006-03-10 2009-01-13 Varian Semiconductor Equipment Associates, Inc. Technique for monitoring and controlling a plasma process
US20080169435A1 (en) * 2007-01-12 2008-07-17 Applied Materials, Inc. Ion beam monitoring arrangement

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5757018A (en) * 1995-12-11 1998-05-26 Varian Associates, Inc. Zero deflection magnetically-suppressed Faraday for ion implanters
CN1937166A (zh) * 2005-09-22 2007-03-28 三星电子株式会社 法拉第系统和包括该法拉第系统的离子注入设备

Also Published As

Publication number Publication date
US20090206273A1 (en) 2009-08-20
KR20100138916A (ko) 2010-12-31
WO2009102875A3 (en) 2009-11-05
CN101952942A (zh) 2011-01-19
US8097866B2 (en) 2012-01-17
JP5547658B2 (ja) 2014-07-16
TWI443706B (zh) 2014-07-01
WO2009102875A2 (en) 2009-08-20
JP2011512627A (ja) 2011-04-21
TW200952024A (en) 2009-12-16
KR101568004B1 (ko) 2015-11-10

Similar Documents

Publication Publication Date Title
US6020592A (en) Dose monitor for plasma doping system
US6791094B1 (en) Method and apparatus for determining beam parallelism and direction
US7132672B2 (en) Faraday dose and uniformity monitor for plasma based ion implantation
US8455848B2 (en) Ion beam incident angle detection assembly and method
JP2012513677A (ja) プラズマイオン処理の均一性監視
JP2003515945A (ja) プラズマドーピングシステムのためのドーズ量モニター
CN101952942B (zh) 测量粒子束特性的装置、系统及其方法
JP2004509436A (ja) イオン注入用のファラデーシステム
JP4984265B2 (ja) イオンビーム注入角度の較正
TWI415159B (zh) 離子植入系統以及離子束角度測量裝置
US20040149926A1 (en) Emittance measuring device for ion beams
KR101663960B1 (ko) 이온 주입시 비임 각도 측정 방법 및 장치
JP5415083B2 (ja) イオン注入システムのための多様な角度のスロットアレーを用いたイオンビームの角度測定システムおよび方法
US20100019141A1 (en) Energy contamination monitor with neutral current detection
Zschornack IMALION-creation and low energy transportation of a milliampere metal ion beam
JPH01197956A (ja) 半導体装置の製造方法およびそれに用いる半導体製造装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant