JP2011510481A5 - - Google Patents

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Publication number
JP2011510481A5
JP2011510481A5 JP2010539685A JP2010539685A JP2011510481A5 JP 2011510481 A5 JP2011510481 A5 JP 2011510481A5 JP 2010539685 A JP2010539685 A JP 2010539685A JP 2010539685 A JP2010539685 A JP 2010539685A JP 2011510481 A5 JP2011510481 A5 JP 2011510481A5
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JP
Japan
Prior art keywords
substrate
support
edge
process gas
ring
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JP2010539685A
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Japanese (ja)
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JP2011510481A (ja
JP5704923B2 (ja
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Priority claimed from US11/960,300 external-priority patent/US8999106B2/en
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JP2010539685A 2007-12-19 2008-12-15 誘導結合プラズマチャンバの縁部性能を制御するための装置および方法 Active JP5704923B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/960,300 US8999106B2 (en) 2007-12-19 2007-12-19 Apparatus and method for controlling edge performance in an inductively coupled plasma chamber
US11/960,300 2007-12-19
PCT/US2008/086885 WO2009085709A1 (en) 2007-12-19 2008-12-15 Apparatus and method for controlling edge performance in an inductively coupled plasma chamber

Publications (3)

Publication Number Publication Date
JP2011510481A JP2011510481A (ja) 2011-03-31
JP2011510481A5 true JP2011510481A5 (enExample) 2012-02-02
JP5704923B2 JP5704923B2 (ja) 2015-04-22

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JP2010539685A Active JP5704923B2 (ja) 2007-12-19 2008-12-15 誘導結合プラズマチャンバの縁部性能を制御するための装置および方法

Country Status (6)

Country Link
US (1) US8999106B2 (enExample)
JP (1) JP5704923B2 (enExample)
KR (1) KR101504084B1 (enExample)
CN (1) CN101874292B (enExample)
TW (2) TWI534930B (enExample)
WO (1) WO2009085709A1 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8414736B2 (en) * 2009-09-03 2013-04-09 Applied Materials, Inc. Plasma reactor with tiltable overhead RF inductive source
US10316412B2 (en) 2012-04-18 2019-06-11 Veeco Instruments Inc. Wafter carrier for chemical vapor deposition systems
US10167571B2 (en) 2013-03-15 2019-01-01 Veeco Instruments Inc. Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems
US9315891B2 (en) * 2013-03-15 2016-04-19 Applied Materials, Inc. Methods for processing a substrate using multiple substrate support positions
US11605546B2 (en) 2015-01-16 2023-03-14 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US10957561B2 (en) 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
USD819580S1 (en) * 2016-04-01 2018-06-05 Veeco Instruments, Inc. Self-centering wafer carrier for chemical vapor deposition
US10825659B2 (en) 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
JP6888007B2 (ja) 2016-01-26 2021-06-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ウェハエッジリングの持ち上げに関する解決
KR102689380B1 (ko) 2016-01-26 2024-07-26 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼 에지 링 리프팅 솔루션
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
US11011353B2 (en) 2016-03-29 2021-05-18 Lam Research Corporation Systems and methods for performing edge ring characterization
US10312121B2 (en) 2016-03-29 2019-06-04 Lam Research Corporation Systems and methods for aligning measurement device in substrate processing systems
US10103027B2 (en) 2016-06-20 2018-10-16 Applied Materials, Inc. Hydrogenation and nitridization processes for modifying effective oxide thickness of a film
US10510545B2 (en) 2016-06-20 2019-12-17 Applied Materials, Inc. Hydrogenation and nitridization processes for modifying effective oxide thickness of a film
US10410832B2 (en) * 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
US10665433B2 (en) * 2016-09-19 2020-05-26 Varian Semiconductor Equipment Associates, Inc. Extreme edge uniformity control
JP2019537253A (ja) * 2016-10-18 2019-12-19 マットソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 被加工物を処理するためのシステムおよび方法
US9947517B1 (en) 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US10553404B2 (en) 2017-02-01 2020-02-04 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US11404249B2 (en) * 2017-03-22 2022-08-02 Tokyo Electron Limited Substrate processing apparatus
US11075105B2 (en) 2017-09-21 2021-07-27 Applied Materials, Inc. In-situ apparatus for semiconductor process module
KR102617972B1 (ko) 2017-11-21 2023-12-22 램 리써치 코포레이션 하단 링 및 중간 에지 링
US11056325B2 (en) 2017-12-20 2021-07-06 Applied Materials, Inc. Methods and apparatus for substrate edge uniformity
US11043400B2 (en) 2017-12-21 2021-06-22 Applied Materials, Inc. Movable and removable process kit
US10790123B2 (en) 2018-05-28 2020-09-29 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
US11935773B2 (en) 2018-06-14 2024-03-19 Applied Materials, Inc. Calibration jig and calibration method
US11798789B2 (en) 2018-08-13 2023-10-24 Lam Research Corporation Replaceable and/or collapsible edge ring assemblies for plasma sheath tuning incorporating edge ring positioning and centering features
US11289310B2 (en) 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
WO2020214327A1 (en) 2019-04-19 2020-10-22 Applied Materials, Inc. Ring removal from processing chamber
US12009236B2 (en) 2019-04-22 2024-06-11 Applied Materials, Inc. Sensors and system for in-situ edge ring erosion monitor
KR102640172B1 (ko) 2019-07-03 2024-02-23 삼성전자주식회사 기판 처리 장치 및 이의 구동 방법
US11830725B2 (en) 2020-01-23 2023-11-28 Applied Materials, Inc. Method of cleaning a structure and method of depositing a capping layer in a structure
WO2021194470A1 (en) 2020-03-23 2021-09-30 Lam Research Corporation Mid-ring erosion compensation in substrate processing systems
US11380575B2 (en) * 2020-07-27 2022-07-05 Applied Materials, Inc. Film thickness uniformity improvement using edge ring and bias electrode geometry

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60109789A (ja) 1983-11-15 1985-06-15 Citizen Watch Co Ltd アナログ電子時計のモーター負荷補償回路
US4512841A (en) * 1984-04-02 1985-04-23 International Business Machines Corporation RF Coupling techniques
JPH03257182A (ja) * 1990-03-07 1991-11-15 Hitachi Ltd 表面加工装置
US6165311A (en) * 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6095083A (en) * 1991-06-27 2000-08-01 Applied Materiels, Inc. Vacuum processing chamber having multi-mode access
JP2565156Y2 (ja) * 1991-12-28 1998-03-11 国際電気株式会社 半導体製造装置及びそのウェーハ置台
JP3566740B2 (ja) * 1992-09-30 2004-09-15 アプライド マテリアルズ インコーポレイテッド 全ウエハデポジション用装置
US5803977A (en) * 1992-09-30 1998-09-08 Applied Materials, Inc. Apparatus for full wafer deposition
JP3242166B2 (ja) * 1992-11-19 2001-12-25 株式会社日立製作所 エッチング装置
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5800686A (en) * 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
JP2638443B2 (ja) * 1993-08-31 1997-08-06 日本電気株式会社 ドライエッチング方法およびドライエッチング装置
US5556476A (en) * 1994-02-23 1996-09-17 Applied Materials, Inc. Controlling edge deposition on semiconductor substrates
US6033480A (en) * 1994-02-23 2000-03-07 Applied Materials, Inc. Wafer edge deposition elimination
JP3136054B2 (ja) 1994-08-16 2001-02-19 東京エレクトロン株式会社 プラズマ処理装置
JPH08186081A (ja) * 1994-12-29 1996-07-16 F T L:Kk 半導体装置の製造方法及び半導体装置の製造装置
US5888413A (en) * 1995-06-06 1999-03-30 Matsushita Electric Industrial Co., Ltd. Plasma processing method and apparatus
US5700725A (en) * 1995-06-26 1997-12-23 Lucent Technologies Inc. Apparatus and method for making integrated circuits
US5584936A (en) * 1995-12-14 1996-12-17 Cvd, Incorporated Susceptor for semiconductor wafer processing
US6054013A (en) * 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
CN1164125A (zh) * 1996-02-20 1997-11-05 株式会社日立制作所 等离子体处理方法和装置
US5800619A (en) * 1996-06-10 1998-09-01 Lam Research Corporation Vacuum plasma processor having coil with minimum magnetic field in its center
US5846332A (en) 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US5848889A (en) * 1996-07-24 1998-12-15 Applied Materials Inc. Semiconductor wafer support with graded thermal mass
US5920797A (en) * 1996-12-03 1999-07-06 Applied Materials, Inc. Method for gaseous substrate support
JP3247079B2 (ja) 1997-02-06 2002-01-15 松下電器産業株式会社 エッチング方法及びエッチング装置
US5824607A (en) * 1997-02-06 1998-10-20 Applied Materials, Inc. Plasma confinement for an inductively coupled plasma reactor
US6133152A (en) * 1997-05-16 2000-10-17 Applied Materials, Inc. Co-rotating edge ring extension for use in a semiconductor processing chamber
US6280183B1 (en) * 1998-04-01 2001-08-28 Applied Materials, Inc. Substrate support for a thermal processing chamber
US6146504A (en) * 1998-05-21 2000-11-14 Applied Materials, Inc. Substrate support and lift apparatus and method
KR100292410B1 (ko) * 1998-09-23 2001-06-01 윤종용 불순물 오염이 억제된 반도체 제조용 반응 챔버
US6176198B1 (en) * 1998-11-02 2001-01-23 Applied Materials, Inc. Apparatus and method for depositing low K dielectric materials
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
US6229264B1 (en) * 1999-03-31 2001-05-08 Lam Research Corporation Plasma processor with coil having variable rf coupling
JP2000323487A (ja) * 1999-05-14 2000-11-24 Tokyo Electron Ltd 枚葉式熱処理装置
JP2001068538A (ja) * 1999-06-21 2001-03-16 Tokyo Electron Ltd 電極構造、載置台構造、プラズマ処理装置及び処理装置
US6344105B1 (en) * 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
KR100315088B1 (ko) * 1999-09-29 2001-11-24 윤종용 포커스 링을 갖는 반도체 웨이퍼 제조 장치
US6589352B1 (en) 1999-12-10 2003-07-08 Applied Materials, Inc. Self aligning non contact shadow ring process kit
JP4419237B2 (ja) 1999-12-22 2010-02-24 東京エレクトロン株式会社 成膜装置及び被処理体の処理方法
US6383931B1 (en) * 2000-02-11 2002-05-07 Lam Research Corporation Convertible hot edge ring to improve low-K dielectric etch
US6350320B1 (en) * 2000-02-22 2002-02-26 Applied Materials, Inc. Heater for processing chamber
US6685798B1 (en) * 2000-07-06 2004-02-03 Applied Materials, Inc Plasma reactor having a symmetrical parallel conductor coil antenna
US6414648B1 (en) * 2000-07-06 2002-07-02 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
KR100384060B1 (ko) * 2000-12-04 2003-05-14 삼성전자주식회사 반도체장치 애싱설비의 척 플레이트 및 이를 이용한 척조립체
US6634882B2 (en) * 2000-12-22 2003-10-21 Asm America, Inc. Susceptor pocket profile to improve process performance
US6344631B1 (en) * 2001-05-11 2002-02-05 Applied Materials, Inc. Substrate support assembly and processing apparatus
EP1397827B1 (de) * 2001-05-29 2008-04-02 Aixtron AG Aus einem tragkörper und darauf gasgelagerten und drehangetriebenen substrathalter bestehende anordnung
US20030044529A1 (en) * 2001-08-29 2003-03-06 Hsiao-Che Wu Method of depositing thin film
US20030070620A1 (en) * 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
US6887317B2 (en) * 2002-09-10 2005-05-03 Applied Materials, Inc. Reduced friction lift pin
US7252738B2 (en) * 2002-09-20 2007-08-07 Lam Research Corporation Apparatus for reducing polymer deposition on a substrate and substrate support
KR20040033831A (ko) 2002-10-16 2004-04-28 삼성전자주식회사 반도체 소자 제조 장치
JP4318913B2 (ja) 2002-12-26 2009-08-26 東京エレクトロン株式会社 塗布処理装置
US7179754B2 (en) * 2003-05-28 2007-02-20 Applied Materials, Inc. Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy
US7024105B2 (en) 2003-10-10 2006-04-04 Applied Materials Inc. Substrate heater assembly
JP4441356B2 (ja) 2003-10-16 2010-03-31 東京エレクトロン株式会社 成膜装置
US7955646B2 (en) * 2004-08-09 2011-06-07 Applied Materials, Inc. Elimination of flow and pressure gradients in low utilization processes
US20070187363A1 (en) * 2006-02-13 2007-08-16 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
US7504041B2 (en) * 2006-05-03 2009-03-17 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator
US7520999B2 (en) * 2006-05-03 2009-04-21 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with dynamic adjustment of the plasma source power applicator and the workpiece relative to one another
US7419551B2 (en) * 2006-05-03 2008-09-02 Applied Materials, Inc. Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another
US7431797B2 (en) * 2006-05-03 2008-10-07 Applied Materials, Inc. Plasma reactor with a dynamically adjustable plasma source power applicator

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