TWI534930B - 用以控制感應耦合電漿室中邊緣表現的設備與方法 - Google Patents
用以控制感應耦合電漿室中邊緣表現的設備與方法 Download PDFInfo
- Publication number
- TWI534930B TWI534930B TW104108494A TW104108494A TWI534930B TW I534930 B TWI534930 B TW I534930B TW 104108494 A TW104108494 A TW 104108494A TW 104108494 A TW104108494 A TW 104108494A TW I534930 B TWI534930 B TW I534930B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- edge
- support
- top plate
- substrate support
- Prior art date
Links
- 238000009616 inductively coupled plasma Methods 0.000 title claims description 15
- 238000000034 method Methods 0.000 title description 30
- 239000000758 substrate Substances 0.000 claims description 154
- 238000012545 processing Methods 0.000 claims description 47
- 235000001674 Agaricus brunnescens Nutrition 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 2
- 238000011109 contamination Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 26
- 229910052757 nitrogen Inorganic materials 0.000 description 13
- 238000011282 treatment Methods 0.000 description 10
- 238000005121 nitriding Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910000420 cerium oxide Inorganic materials 0.000 description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- -1 nitrogen ions Chemical class 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/960,300 US8999106B2 (en) | 2007-12-19 | 2007-12-19 | Apparatus and method for controlling edge performance in an inductively coupled plasma chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201523773A TW201523773A (zh) | 2015-06-16 |
| TWI534930B true TWI534930B (zh) | 2016-05-21 |
Family
ID=40789121
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097149222A TWI501336B (zh) | 2007-12-19 | 2008-12-17 | 用以控制感應耦合電漿室中邊緣表現的設備與方法 |
| TW104108494A TWI534930B (zh) | 2007-12-19 | 2008-12-17 | 用以控制感應耦合電漿室中邊緣表現的設備與方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097149222A TWI501336B (zh) | 2007-12-19 | 2008-12-17 | 用以控制感應耦合電漿室中邊緣表現的設備與方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8999106B2 (enExample) |
| JP (1) | JP5704923B2 (enExample) |
| KR (1) | KR101504084B1 (enExample) |
| CN (1) | CN101874292B (enExample) |
| TW (2) | TWI501336B (enExample) |
| WO (1) | WO2009085709A1 (enExample) |
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| US10658222B2 (en) | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
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| USD819580S1 (en) * | 2016-04-01 | 2018-06-05 | Veeco Instruments, Inc. | Self-centering wafer carrier for chemical vapor deposition |
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| CN116110846A (zh) | 2016-01-26 | 2023-05-12 | 应用材料公司 | 晶片边缘环升降解决方案 |
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| US7419551B2 (en) | 2006-05-03 | 2008-09-02 | Applied Materials, Inc. | Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another |
| US7520999B2 (en) | 2006-05-03 | 2009-04-21 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor with dynamic adjustment of the plasma source power applicator and the workpiece relative to one another |
-
2007
- 2007-12-19 US US11/960,300 patent/US8999106B2/en active Active
-
2008
- 2008-12-15 KR KR1020107015878A patent/KR101504084B1/ko active Active
- 2008-12-15 WO PCT/US2008/086885 patent/WO2009085709A1/en not_active Ceased
- 2008-12-15 CN CN200880117690.1A patent/CN101874292B/zh active Active
- 2008-12-15 JP JP2010539685A patent/JP5704923B2/ja active Active
- 2008-12-17 TW TW097149222A patent/TWI501336B/zh active
- 2008-12-17 TW TW104108494A patent/TWI534930B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI501336B (zh) | 2015-09-21 |
| US8999106B2 (en) | 2015-04-07 |
| TW200939381A (en) | 2009-09-16 |
| WO2009085709A1 (en) | 2009-07-09 |
| CN101874292B (zh) | 2013-02-13 |
| TW201523773A (zh) | 2015-06-16 |
| US20090162952A1 (en) | 2009-06-25 |
| CN101874292A (zh) | 2010-10-27 |
| KR101504084B1 (ko) | 2015-03-19 |
| KR20100105695A (ko) | 2010-09-29 |
| JP2011510481A (ja) | 2011-03-31 |
| JP5704923B2 (ja) | 2015-04-22 |
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