CN101874292A - 用以控制感应耦合等离子体室中边缘表现的设备与方法 - Google Patents
用以控制感应耦合等离子体室中边缘表现的设备与方法 Download PDFInfo
- Publication number
- CN101874292A CN101874292A CN200880117690.1A CN200880117690A CN101874292A CN 101874292 A CN101874292 A CN 101874292A CN 200880117690 A CN200880117690 A CN 200880117690A CN 101874292 A CN101874292 A CN 101874292A
- Authority
- CN
- China
- Prior art keywords
- substrate
- edge
- edge surface
- height
- difference
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000009616 inductively coupled plasma Methods 0.000 title description 15
- 239000000758 substrate Substances 0.000 claims abstract description 154
- 238000012545 processing Methods 0.000 claims abstract description 31
- 230000008569 process Effects 0.000 claims description 14
- 241001584775 Tunga penetrans Species 0.000 claims description 8
- 238000013461 design Methods 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 2
- 230000009467 reduction Effects 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 43
- 239000007789 gas Substances 0.000 description 25
- 229910052757 nitrogen Inorganic materials 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000009527 percussion Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003319 supportive effect Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
Abstract
本发明一般地提供在处理过程中控制边缘表现的方法与设备。本发明一个实施例提供的设备包括界定处理空间的腔室主体、设置以将处理气体流入处理空间的气体入口、及配置于处理空间中的支撑底座。支撑底座包括顶部平板,其具有设置以于背侧上接收并支撑基板的基板支撑表面、与设置以沿着基板的外边缘围绕基板的边缘表面,而基板的顶表面与边缘表面间的高度差用来控制基板的边缘区域对处理气体的暴露。
Description
技术领域
本发明的实施例一般地涉及处理半导体基板的方法与设备。更特别地,本发明的实施例提供利用一致性改善的感应耦合等离子体技术来处理半导体基板的方法与设备。
背景技术
用于制造半导体微电子电路的等离子体反应器可应用RF(射频)感应耦合场来维持处理气体形成的等离子体。传统感应耦合等离子体反应器通常包括具有侧壁与顶板的真空室、位于室中且通常面对顶板的工件支撑底座、能够供应处理气体进入室中的气体入口、及一个或更多覆盖顶板的线圈天线。一个或更多线圈天线通常围绕一大致垂直于顶板的对称轴。RF等离子体源功率提供器横跨各个线圈天线连接。有时,反应器可包括覆盖顶板且由外线圈天线围绕的内线圈天线。
一般而言,将高频率RF源功率信号施加至一个或更多靠近反应器室顶板的线圈天线。配置在室中的底座上的基板具有施加于其上的偏压RF信号。施加至线圈天线的信号的功率主要确定室中的等离子体离子密度,而施加至基板的偏压信号的功率则确定晶片表面处的离子能量。
线圈通常具有“内”与“外”线圈天线而径向或水平地分散(而不是局限于离散半径范围中),以致因此分散其径向位置。通过改变内与外天线间的施加RF功率的相对分配来改变等离子体离子分布的径向分布。然而,当晶片变得较大时,较难以维持横跨整个晶片表面的均匀等离子体离子密度。
图1示意性地描绘典型感应耦合等离子体反应器所遭遇的基板边缘附近的不均匀问题。图1显示在典型感应耦合等离子体反应器中执行氮化处理后横跨基板的氮剂量。在形成于基板上的二氧化硅栅极介电膜上执行氮化处理。将基板置于能够产生感应耦合等离子体的真空室中。使氮气流至等离子体室并在流动持续时击发(strike)等离子体。氮等离子体中的氮自由基与/或氮离子接着扩散并/或轰击进入二氧化硅栅极介电膜。
图1是直径扫描图,其显示在感应耦合等离子体反应器中执行氮化后,横跨300mm基板的整个表面直径的氮剂量(Ndose)。图1中的直径扫描图描绘出不均匀问题的其中之一:边缘区域附近的低剂量,通常称为边缘-降低。需要在典型情况下减少边缘降低以实现横跨基板的均匀性。有时,需要将边缘效能调整为高点或低点以满足特定需求。
因此,需要一种利用具有控制边缘表现能力的感应耦合等离子体技术来处理半导体基板的设备与方法。
发明内容
本发明一般地提供在处理过程中控制基板上的边缘处理表现的方法与设备。
本发明的一实施例提供处理基板的设备,其包括界定处理空间的腔室主体、设置以将处理气体流入处理空间的气体入口、及配置于处理空间中的支撑底座,其中支撑底座包括顶部平板,其具有设置以于背侧上接收并支撑基板的基板支撑表面、及设置以沿着基板的外边缘围绕基板的边缘表面,其中基板的顶表面与边缘表面间的高度差用来控制基板的边缘区域对处理气体的暴露。
本发明的另一实施例提供处理室中支撑底座所用的顶部平板,其包括具有基本上平板形状的主体,其中主体具有设置以于背侧上接收并支撑基板的基板支撑表面、及设置以沿着基板的外边缘围绕基板的边缘表面,其中基板的顶表面与边缘表面间的高度差经设计以实现基板的边缘区域对流入处理室中的处理气体的期望暴露。
本发明的又一实施例提供调整边缘处理表现的方法,其包括在处理室中提供支撑底座,其中支撑底座具有设置以接收并支撑基板于其上的基板支撑表面、及设置以沿着基板的外边缘围绕基板的边缘表面;将基板置于基板底座上;使处理气体流至处理室;并以处理气体处理基板,其中基板的顶表面与边缘表面间的高度差用来控制基板的边缘区域对流至处理室的处理气体的暴露。
附图说明
为了更详细地了解本发明的上述特征,可参照实施例(某些描绘于附图中)来理解本发明简短概述于上的特定描述。然而,需注意附图仅描绘本发明的典型实施例而因此不被视为其范围的限制因素,因为本发明可允许其他等效实施例。
图1(现有技术)示意性描绘传统感应耦合等离子体反应器所遭遇称为边缘降低的不均匀问题。
图2示意性描绘根据本发明一实施例的等离子体反应器的剖面侧视图。
图3A示意性描绘根据本发明一实施例的支撑底座的顶部平板的部分侧视图。
图3B示意性描绘根据本发明一实施例的利用边缘表面与处理的基板顶表面之间的高度差控制边缘表现。
图4示意性描绘根据本发明一实施例的支撑底座的剖面侧视图。
图5A示意性描绘图4的支撑底座的顶部平板。
图5B示意性描绘图5A的顶部平板的部分侧视图。
图6A-图6B显示根据本发明一实施例的边缘分布控制的曲线图。
为了促进理解,尽可能应用相同的附图标记来标示图示中相同的元件。可以理解一实施例中公开的元件可有利地应用于其他实施例而无需特定详述。
具体实施方式
本发明一般地提供利用感应耦合等离子体来处理半导体基板的设备与方法。本发明的实施例提供具有提供改善均匀性的特征的感应耦合等离子体反应器。特别地,本发明的感应耦合等离子体反应器包括能够调协边缘表现分布的基板支撑组件。
图2示意性描绘根据本发明一实施例的等离子体反应器100的剖面侧视图。等离子体反应器100通常包括反应器室101与位于反应器室101上的天线组件102。天线组件102经设置以在反应器室101中产生感应耦合等离子体。
反应器室101具有圆柱形侧壁105与平坦顶板110界定的处理空间103。基板支撑底座115配置于反应器室101中,以面对平坦顶板110且位于室的对称轴中心的关系加以定位。基板支撑底座115经设置以支撑基板106于其上。基板支撑底座115包括设置以在处理过程中接收并支撑基板106的支撑主体117。一实施例中,基板支撑底座115具有围绕基板106的边缘表面118。边缘表面118与基板106间的相对高度经设置以调整基板106边缘附近的处理结果。
多个支撑销116可移动地配置于基板支撑底座115上并经设置以促进基板运送。真空泵120与反应器室101的真空口121共同作用。狭缝阀口104形成于圆柱形侧壁105上以让基板运送进入与离开处理空间103。
处理气体供应器125透过气体入口130供应处理气体进入处理空间103。气体入口130可位于平坦顶板110中央并具有多个气体注射口以引导气体至处理空间103的不同区域。一实施例中,气体入口130可经设置以分别供应可调节的处理气体流至处理空间103的不同区域以实现处理空间103中所期望的处理气体分布。
天线组件102包括配置于反应器室的平坦顶板110上的圆柱形侧壁126。线圈架设平板127可移动地配置于侧壁126上。侧壁126、线圈架设平板127与平坦顶板110大致界定了线圈空间135。多个线圈挂钩132自线圈架设平板127延伸于线圈空间135中。多个线圈挂钩132经设置以将一个或更多线圈天线置于线圈空间135中。
一实施例中,内线圈131与外线圈129配置于线圈空间135中以在处理过程中维持横跨整个基板表面的均匀的等离子体离子密度。一实施例中,内线圈131的直径约5英寸而外线圈129的直径约15英寸。可在名称为“PlasmaReactor Having a Symmetric Parallel Conductor Coil Antenna”的美国专利号6,685,798中发现不同设计的线圈天线的详细描述,将其以参考资料并入本文中。
各个内线圈131与外线圈129可为螺线多导体插入式线圈天线,其界定垂直的直圆柱体或虚构的圆柱体表面或位置,其对称轴与反应器室101的对称轴基本重合。希望让内线圈131与外线圈129的轴与反应器室101中欲被处理的基板106的对称轴重合。然而,内线圈131、外线圈129、反应器室101与基板106间的校准易受到造成偏斜的误差的影响。线圈架设平板127可移动地配置于侧壁126上,以致内线圈131与外线圈129可一起或个别地倾斜于反应器室101。一实施例中,可旋转线圈架设平板127与侧壁126间的倾斜环128来调节线圈架设平板127。倾斜环128具有可变的厚度以使得线圈架设平板127倾斜架设。
等离子体反应器100还包括功率组件134,其经设置以提供功率供应给内线圈131与外线圈129。功率组件134通常包括RF功率供应器与匹配网路。一实施例中,功率组件134可置于线圈架设平板127上。
可在2007年12月19日申请的名称为“Apparatus and Method for Processinga Substrate Using Inductively Coupled Plasma Technology”的美国申请案号11/960,111中发现等离子体反应器100的更详细描述,将其以参考资料并入本文中。
图3A示意性地描绘根据本发明一实施例的支撑底座(例如,图2的基板支撑底座115)的顶部平板310的部分侧视图。
顶部平板310包括主体315,其具有设置以支撑基板301的背侧303的基板支撑表面311。顶部平板310经设置以接收并支撑基板301于基板支撑表面311上,以致基板301的器件侧302暴露于处理气体305的流动中。一实施例中,处理气体305的流动可由射频源击发,并于其中包括自由基。一实施例中,凹部314形成于主体315中且位于基板支撑表面311中以减少顶部平板310与基板301间的接触面积。因此,基板支撑表面311可具有环状外形并支撑基板301的边缘304附近的带状区域。一实施例中,顶部平板310经设计以让基板301的边缘304没有悬挂(hang free)。
顶部平板310还具有边缘表面312,其位于基板支撑表面311径向外侧并经设置以围绕基板301。一实施例中,边缘表面312与基板301的器件侧302间的高度差313经设计以控制进行中的处理的边缘表现,更明确地说,高度差313用来控制处理过程中边缘304对处理气体305的暴露。因此,高度差313可用来控制距边缘304约10mm区域中的表现。
图3B示意性地描绘根据本发明一实施例利用边缘表面与欲被处理的基板顶表面间的高度差来控制边缘表现。图3B描绘沿着被处理的基板半径的常态化处理结果的表现分布320a、320b、320c。处理结果可归因于不同处理的不同参数,诸如掺杂处理的剂量、沉积厚度与等离子体蚀刻的轰击强度。
分布320a为边缘强烈表现,其表示出基板的边缘区域相对于基板的中央部分而言接受更多的处理气体/等离子体暴露。本发明的一实施例中,基板301的顶表面与顶部平板310的边缘表面间的正高度差313a用来实现类似320a的边缘表现。
分布320b为边缘平坦表现,其表示出基板的边缘区域相对于基板的中央部分而言接受相似的处理气体/等离子体暴露。本发明的一实施例中,基板301的顶表面与边缘表面间的少量正高度差313b用来实现类似320b的边缘表现。一实施例中,可将期望厚度的边缘环312b置于顶部平板310上以得到少量的正高度差313b。一实施例中,少量的正高度差可小于约0.5英寸。
分布320c为边缘衰弱表现,其表示出基板的边缘区域相对于基板的中央部分而言接受较少的处理气体/等离子体暴露。本发明的一实施例中,基板301的顶表面与边缘表面间的负高度差313c用来实现类似320c的边缘表现。一实施例中,可将期望厚度的边缘环312c置于顶部平板310上以得到负的高度差313c。
图4示意性描绘根据本发明一实施例的支撑底座300的剖面侧视图。支撑底座300经设置以接收并支撑基板于处理室(例如,图2的等离子体反应器100)中。
支撑底座300包括顶部平板330,其具有设置以接收并支撑基板301的背侧303的基板支撑表面331。顶部平板330透过转接平板340堆叠于设施平板350上。顶部平板330、转接平板340与设施平板350的堆叠接着经由转接器360耦接至腔室主体370(部分显示),以致顶部平板330密封地配置于腔室主体370所界定的处理空间中。
设施平板350经设置以容纳多个驱动机构351,其经设置以提高与降低多个顶料销(lifting pins)341。多个顶料销341可移动地配置于多个形成在顶部平板330中的销孔336中。如图4所示,可将多个顶料销341提升高于顶部平板330以促进由基板处理器(例如,机械手)运送基板。接收基板301之后,可由多个驱动机构351将多个顶料销341降低坐落于基板支撑表面331下多个销孔336中,并将基板301配置于基板支撑表面331上。
顶部平板330具有圆盘外形的主体。一实施例中,顶部平板330可由石英构成。顶部平板330经设置以接收并支撑基板301于基板支撑表面311上,以致基板301的器件侧302暴露于处理空间中的处理气体流中。
图5A示意性描绘顶部平板330的一实施例,而图5B示意性描绘顶部平板330的部分侧视图。一实施例中,凹部334形成于基板支撑表面311中以减少顶部平板330与基板301间的接触面积。因此,基板支撑表面331可具有环状外形并支撑基板301的边缘附近的带状区域。
顶部平板330具有形成边缘表面332的凸缘,该边缘表面332位于基板支撑表面331径向外侧并经设置以围绕基板301。一实施例中,边缘表面332与基板支撑表面331间的高度差333经设计以控制进行中的处理的边缘表现,更明确地说,高度差333用来控制处理过程中基板301的边缘304对处理化学作用的暴露。
一实施例中,设定高度差333以致基板301的顶表面高于边缘表面332约0.5英寸,或足以实现横跨基板半径的均匀处理表现。一实施例中,高度差333约为0.25英寸。
一实施例中,期望厚度的选择性边缘环337可用来改变边缘表面的高度以达到期望的边缘表现。
一实施例中,多个支撑岛335由基板支撑表面331外的顶部平板330突出。多个支撑岛335高于基板支撑表面331并经设置以避免基板301在处理过程中滑走。
一实施例中,多个顶料销341可用来调整基板301的高度,从而调整处理过程中基板301与边缘表面332间的高度差。
一实施例中,校准孔338形成于顶部平板330的中心附近并经设置以促进组装过程中顶部平板330的校准。一实施例中,参照图4,多个顶料销341的每个可具有蘑菇形头以避免多个销孔336受到处理空间中的处理气体污染。一实施例中,多个顶料销341可由蓝宝石构成。
图6A-图6B是显示根据本发明一实施例的边缘分布控制的扫描图。图6A-图6B显示在等离子体反应器中执行氮化处理后横跨基板直径的氮剂量。氮化处理通常在形成于基板上的二氧化硅栅极介电膜上执行。基板置于等离子体反应器(例如,图2的等离子体反应器100)中。将氮气流至等离子体室并在氮气流持续时由线圈组件(诸如,图2的线圈129、131)击发等离子体。等离子体离子化氮气,而离子化的氮气接着扩散进入二氧化硅栅极介电膜。
图6A是显示在等离子体反应器中执行氮化处理后横跨基板直径的氮剂量的扫描图,该等离子体反应器具有边缘表面稍微高于处理的基板顶表面的基板支撑件。图6A具有从200sccm、400sccm、600sccm、800sccm与1000sccm氮流速的氮化处理得到的剂量结果。针对图6A中的所有结果,基板边缘附近的剂量基本低于横跨基板其余部分的平均剂量。
图6B是显示在等离子体反应器中执行氮化处理后横跨基板直径的氮剂量的扫描图,该等离子体反应器具有边缘表面低于处理的基板顶表面的基板支撑件。这些特定实例中,边缘表面与基板的顶表面间的高度差约为0.5英寸。图6B显示从200sccm、400sccm、600sccm、800sccm与1000sccm氮流速的氮化处理得到的剂量结果。与图6A的结果相比,图6B的结果在基板边缘附近具有增加的剂量。再者,图6B的结果具有基本接近于横跨基板的平均剂量的边缘剂量。
应注意图6A-图6B的曲线图还显示其他不均匀性,诸如中心附近的低剂量与不对称的剂量。仅根据修正边缘-降低来描述本发明。
图6A-图6B中显示的基板中心附近的低剂量是由于流量分布所造成,而可通过提供独立可控制式流动至基板不同区域来修正中心附近的低剂量。可在2007年12月19日申请的名称为“Duel Zone Gas Injection Nozzle”的美国专利申请案11/960,166中发现修正中心附近低剂量的详细描述,其以参考资料并入本文中。
横跨基板的不对称剂量通常称为基线偏斜。可通过相对于处理的基板调整线圈组件来实现基线偏斜的修正。可在2007年12月19日申请的名称为“Method of Correcting Baseline Skew by a Novel Motorized Source CoilAssembly”的美国专利申请案11/960,246中发现修正基线偏斜的详细描述,其以参考资料并入本文中。
虽然上述涉及本发明的某些实施例,但可在不悖离本发明基本范围的情况下设计出本发明其他与进一步的实施例,而本发明的范围由随后的权利要求所确定。
Claims (15)
1.一种处理基板的设备,包括:
腔室主体,界定处理空间;
气体入口,设置以将处理气体流入该处理空间中;及
支撑底座,配置于该处理空间中,其中该支撑底座包括顶部平板,该顶部平板具有设置以于背侧上接收并支撑该基板的基板支撑表面、及设置以沿着该基板的外边缘围绕该基板的边缘表面,其中该基板的顶表面与该边缘表面间的高度差用来控制该基板的边缘区域对该处理气体的暴露。
2.如权利要求1所述的设备,其中该基板支撑表面小于该基板以致该背侧的边缘没有悬挂。
3.如权利要求2所述的设备,其中该边缘表面低于该基板的顶表面。
4.如权利要求3所述的设备,其中该基板的顶表面与该边缘表面间的高度差介于约0.25英寸至约0.5英寸之间。
5.如权利要求3所述的设备,其中该基板支撑表面是环状顶表面,该环的直径小于该基板的直径。
6.如权利要求3所述的设备,其中该顶部平板包括多个在该基板支撑表面径向向外从顶部平板突出的指状物,其中该多个指状物经设置以避免该基板滑走。
7.如权利要求3所述的设备,还包括配置于该顶部平板的边缘表面上且围绕该基板的边缘环,其中该边缘环经设置以调整该边缘表面与该基板的顶表面间的高度差。
8.一种处理室中的支撑底座所用的顶部平板,包括:
主体,具有基本上平板的形状,其中该主体具有设置以于背侧上接收并支撑基板的基板支撑表面、与设置以沿着该基板的外边缘围绕该基板的边缘表面,其中该基板的顶表面与该边缘表面间的高度差经设计以实现该基板的边缘区域对该处理室中流动的处理气体的期望暴露。
9.如权利要求8所述的顶部平板,其中该主体由石英所构成。
10.一种调节边缘处理表现的方法,包括:
在处理室中提供支撑底座,其中该支撑底座具有设置以接收并支撑基板于其上的基板支撑表面、与设置以沿着该基板的外边缘围绕该基板的边缘表面;
将基板置于该基板底座上;
将处理气体流至该处理室;及
用该处理气体处理该基板,其中该基板的顶表面与该边缘表面间的高度差用来控制该基板的边缘区域对流至该处理室的处理气体的暴露。
11.如权利要求10所述的方法,其中用该处理气体处理该基板的步骤包括降低该边缘表面以提高该边缘区域对该处理气体的暴露。
12.如权利要求10所述的方法,其中用该处理气体处理该基板的步骤包括提高该边缘表面以减少该边缘区域对该处理气体的暴露。
13.如权利要求11所述的方法,其中该基板的顶表面与该边缘表面间的高度差介于约0.25英寸至约0.5英寸之间。
14.如权利要求10所述的方法,还包括配置边缘环于该边缘表面上以调整该基板的顶表面与该边缘表面间的高度差。
15.如权利要求10所述的方法,还包括通过利用顶料销改变该基板的高度来调整该高度差。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/960,300 | 2007-12-19 | ||
US11/960,300 US8999106B2 (en) | 2007-12-19 | 2007-12-19 | Apparatus and method for controlling edge performance in an inductively coupled plasma chamber |
PCT/US2008/086885 WO2009085709A1 (en) | 2007-12-19 | 2008-12-15 | Apparatus and method for controlling edge performance in an inductively coupled plasma chamber |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101874292A true CN101874292A (zh) | 2010-10-27 |
CN101874292B CN101874292B (zh) | 2013-02-13 |
Family
ID=40789121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200880117690.1A Active CN101874292B (zh) | 2007-12-19 | 2008-12-15 | 用以控制感应耦合等离子体室中边缘表现的设备与方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8999106B2 (zh) |
JP (1) | JP5704923B2 (zh) |
KR (1) | KR101504084B1 (zh) |
CN (1) | CN101874292B (zh) |
TW (2) | TWI501336B (zh) |
WO (1) | WO2009085709A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108630514A (zh) * | 2017-03-22 | 2018-10-09 | 东京毅力科创株式会社 | 基板处理装置 |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8414736B2 (en) * | 2009-09-03 | 2013-04-09 | Applied Materials, Inc. | Plasma reactor with tiltable overhead RF inductive source |
US10316412B2 (en) | 2012-04-18 | 2019-06-11 | Veeco Instruments Inc. | Wafter carrier for chemical vapor deposition systems |
US10167571B2 (en) | 2013-03-15 | 2019-01-01 | Veeco Instruments Inc. | Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems |
US9315891B2 (en) * | 2013-03-15 | 2016-04-19 | Applied Materials, Inc. | Methods for processing a substrate using multiple substrate support positions |
US10658222B2 (en) | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
US11605546B2 (en) | 2015-01-16 | 2023-03-14 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
US10957561B2 (en) | 2015-07-30 | 2021-03-23 | Lam Research Corporation | Gas delivery system |
USD819580S1 (en) * | 2016-04-01 | 2018-06-05 | Veeco Instruments, Inc. | Self-centering wafer carrier for chemical vapor deposition |
US10825659B2 (en) | 2016-01-07 | 2020-11-03 | Lam Research Corporation | Substrate processing chamber including multiple gas injection points and dual injector |
CN108369922B (zh) | 2016-01-26 | 2023-03-21 | 应用材料公司 | 晶片边缘环升降解决方案 |
US10651015B2 (en) | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
US10699878B2 (en) | 2016-02-12 | 2020-06-30 | Lam Research Corporation | Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring |
US10438833B2 (en) | 2016-02-16 | 2019-10-08 | Lam Research Corporation | Wafer lift ring system for wafer transfer |
US10312121B2 (en) | 2016-03-29 | 2019-06-04 | Lam Research Corporation | Systems and methods for aligning measurement device in substrate processing systems |
US11011353B2 (en) | 2016-03-29 | 2021-05-18 | Lam Research Corporation | Systems and methods for performing edge ring characterization |
US10103027B2 (en) | 2016-06-20 | 2018-10-16 | Applied Materials, Inc. | Hydrogenation and nitridization processes for modifying effective oxide thickness of a film |
US10510545B2 (en) | 2016-06-20 | 2019-12-17 | Applied Materials, Inc. | Hydrogenation and nitridization processes for modifying effective oxide thickness of a film |
US10410832B2 (en) | 2016-08-19 | 2019-09-10 | Lam Research Corporation | Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment |
US10665433B2 (en) * | 2016-09-19 | 2020-05-26 | Varian Semiconductor Equipment Associates, Inc. | Extreme edge uniformity control |
KR102650824B1 (ko) * | 2016-10-18 | 2024-03-26 | 매슨 테크놀로지 인크 | 워크피스 처리를 위한 시스템 및 방법 |
US9947517B1 (en) | 2016-12-16 | 2018-04-17 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
US10553404B2 (en) | 2017-02-01 | 2020-02-04 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
US11075105B2 (en) | 2017-09-21 | 2021-07-27 | Applied Materials, Inc. | In-situ apparatus for semiconductor process module |
US11056325B2 (en) | 2017-12-20 | 2021-07-06 | Applied Materials, Inc. | Methods and apparatus for substrate edge uniformity |
US11043400B2 (en) | 2017-12-21 | 2021-06-22 | Applied Materials, Inc. | Movable and removable process kit |
US10600623B2 (en) | 2018-05-28 | 2020-03-24 | Applied Materials, Inc. | Process kit with adjustable tuning ring for edge uniformity control |
US11935773B2 (en) | 2018-06-14 | 2024-03-19 | Applied Materials, Inc. | Calibration jig and calibration method |
US11289310B2 (en) | 2018-11-21 | 2022-03-29 | Applied Materials, Inc. | Circuits for edge ring control in shaped DC pulsed plasma process device |
WO2020214327A1 (en) | 2019-04-19 | 2020-10-22 | Applied Materials, Inc. | Ring removal from processing chamber |
KR102640172B1 (ko) | 2019-07-03 | 2024-02-23 | 삼성전자주식회사 | 기판 처리 장치 및 이의 구동 방법 |
WO2021150625A1 (en) | 2020-01-23 | 2021-07-29 | Applied Materials, Inc. | Method of cleaning a structure and method of depositiing a capping layer in a structure |
US11380575B2 (en) * | 2020-07-27 | 2022-07-05 | Applied Materials, Inc. | Film thickness uniformity improvement using edge ring and bias electrode geometry |
Family Cites Families (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60109789A (ja) | 1983-11-15 | 1985-06-15 | Citizen Watch Co Ltd | アナログ電子時計のモーター負荷補償回路 |
US4512841A (en) | 1984-04-02 | 1985-04-23 | International Business Machines Corporation | RF Coupling techniques |
JPH03257182A (ja) | 1990-03-07 | 1991-11-15 | Hitachi Ltd | 表面加工装置 |
US6165311A (en) | 1991-06-27 | 2000-12-26 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna |
US6095083A (en) | 1991-06-27 | 2000-08-01 | Applied Materiels, Inc. | Vacuum processing chamber having multi-mode access |
JP2565156Y2 (ja) * | 1991-12-28 | 1998-03-11 | 国際電気株式会社 | 半導体製造装置及びそのウェーハ置台 |
JP3566740B2 (ja) * | 1992-09-30 | 2004-09-15 | アプライド マテリアルズ インコーポレイテッド | 全ウエハデポジション用装置 |
US5803977A (en) * | 1992-09-30 | 1998-09-08 | Applied Materials, Inc. | Apparatus for full wafer deposition |
JP3242166B2 (ja) | 1992-11-19 | 2001-12-25 | 株式会社日立製作所 | エッチング装置 |
US5444217A (en) | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
US5800686A (en) | 1993-04-05 | 1998-09-01 | Applied Materials, Inc. | Chemical vapor deposition chamber with substrate edge protection |
JP2638443B2 (ja) * | 1993-08-31 | 1997-08-06 | 日本電気株式会社 | ドライエッチング方法およびドライエッチング装置 |
US5556476A (en) * | 1994-02-23 | 1996-09-17 | Applied Materials, Inc. | Controlling edge deposition on semiconductor substrates |
US6033480A (en) | 1994-02-23 | 2000-03-07 | Applied Materials, Inc. | Wafer edge deposition elimination |
JP3136054B2 (ja) | 1994-08-16 | 2001-02-19 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JPH08186081A (ja) * | 1994-12-29 | 1996-07-16 | F T L:Kk | 半導体装置の製造方法及び半導体装置の製造装置 |
US5888413A (en) | 1995-06-06 | 1999-03-30 | Matsushita Electric Industrial Co., Ltd. | Plasma processing method and apparatus |
US5700725A (en) | 1995-06-26 | 1997-12-23 | Lucent Technologies Inc. | Apparatus and method for making integrated circuits |
US5584936A (en) * | 1995-12-14 | 1996-12-17 | Cvd, Incorporated | Susceptor for semiconductor wafer processing |
US6054013A (en) | 1996-02-02 | 2000-04-25 | Applied Materials, Inc. | Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density |
CN1164125A (zh) * | 1996-02-20 | 1997-11-05 | 株式会社日立制作所 | 等离子体处理方法和装置 |
US5800619A (en) | 1996-06-10 | 1998-09-01 | Lam Research Corporation | Vacuum plasma processor having coil with minimum magnetic field in its center |
US5846332A (en) | 1996-07-12 | 1998-12-08 | Applied Materials, Inc. | Thermally floating pedestal collar in a chemical vapor deposition chamber |
US5848889A (en) | 1996-07-24 | 1998-12-15 | Applied Materials Inc. | Semiconductor wafer support with graded thermal mass |
US5920797A (en) | 1996-12-03 | 1999-07-06 | Applied Materials, Inc. | Method for gaseous substrate support |
JP3247079B2 (ja) | 1997-02-06 | 2002-01-15 | 松下電器産業株式会社 | エッチング方法及びエッチング装置 |
US5824607A (en) * | 1997-02-06 | 1998-10-20 | Applied Materials, Inc. | Plasma confinement for an inductively coupled plasma reactor |
US6133152A (en) | 1997-05-16 | 2000-10-17 | Applied Materials, Inc. | Co-rotating edge ring extension for use in a semiconductor processing chamber |
US6280183B1 (en) | 1998-04-01 | 2001-08-28 | Applied Materials, Inc. | Substrate support for a thermal processing chamber |
US6146504A (en) * | 1998-05-21 | 2000-11-14 | Applied Materials, Inc. | Substrate support and lift apparatus and method |
KR100292410B1 (ko) | 1998-09-23 | 2001-06-01 | 윤종용 | 불순물 오염이 억제된 반도체 제조용 반응 챔버 |
US6176198B1 (en) | 1998-11-02 | 2001-01-23 | Applied Materials, Inc. | Apparatus and method for depositing low K dielectric materials |
US6159299A (en) | 1999-02-09 | 2000-12-12 | Applied Materials, Inc. | Wafer pedestal with a purge ring |
US6229264B1 (en) | 1999-03-31 | 2001-05-08 | Lam Research Corporation | Plasma processor with coil having variable rf coupling |
JP2000323487A (ja) | 1999-05-14 | 2000-11-24 | Tokyo Electron Ltd | 枚葉式熱処理装置 |
JP2001068538A (ja) | 1999-06-21 | 2001-03-16 | Tokyo Electron Ltd | 電極構造、載置台構造、プラズマ処理装置及び処理装置 |
US6344105B1 (en) | 1999-06-30 | 2002-02-05 | Lam Research Corporation | Techniques for improving etch rate uniformity |
KR100315088B1 (ko) | 1999-09-29 | 2001-11-24 | 윤종용 | 포커스 링을 갖는 반도체 웨이퍼 제조 장치 |
US6589352B1 (en) | 1999-12-10 | 2003-07-08 | Applied Materials, Inc. | Self aligning non contact shadow ring process kit |
JP4419237B2 (ja) | 1999-12-22 | 2010-02-24 | 東京エレクトロン株式会社 | 成膜装置及び被処理体の処理方法 |
US6383931B1 (en) | 2000-02-11 | 2002-05-07 | Lam Research Corporation | Convertible hot edge ring to improve low-K dielectric etch |
US6350320B1 (en) | 2000-02-22 | 2002-02-26 | Applied Materials, Inc. | Heater for processing chamber |
US6414648B1 (en) | 2000-07-06 | 2002-07-02 | Applied Materials, Inc. | Plasma reactor having a symmetric parallel conductor coil antenna |
US6685798B1 (en) | 2000-07-06 | 2004-02-03 | Applied Materials, Inc | Plasma reactor having a symmetrical parallel conductor coil antenna |
KR100384060B1 (ko) | 2000-12-04 | 2003-05-14 | 삼성전자주식회사 | 반도체장치 애싱설비의 척 플레이트 및 이를 이용한 척조립체 |
US6634882B2 (en) * | 2000-12-22 | 2003-10-21 | Asm America, Inc. | Susceptor pocket profile to improve process performance |
US6344631B1 (en) | 2001-05-11 | 2002-02-05 | Applied Materials, Inc. | Substrate support assembly and processing apparatus |
JP2004528721A (ja) * | 2001-05-29 | 2004-09-16 | アイクストロン、アーゲー | 支持体およびその上にガス支持され回転駆動される基板保持器から構成される装置 |
US20030044529A1 (en) | 2001-08-29 | 2003-03-06 | Hsiao-Che Wu | Method of depositing thin film |
US20030070620A1 (en) | 2001-10-15 | 2003-04-17 | Cooperberg David J. | Tunable multi-zone gas injection system |
US6887317B2 (en) * | 2002-09-10 | 2005-05-03 | Applied Materials, Inc. | Reduced friction lift pin |
US7252738B2 (en) | 2002-09-20 | 2007-08-07 | Lam Research Corporation | Apparatus for reducing polymer deposition on a substrate and substrate support |
KR20040033831A (ko) | 2002-10-16 | 2004-04-28 | 삼성전자주식회사 | 반도체 소자 제조 장치 |
JP4318913B2 (ja) | 2002-12-26 | 2009-08-26 | 東京エレクトロン株式会社 | 塗布処理装置 |
US7179754B2 (en) | 2003-05-28 | 2007-02-20 | Applied Materials, Inc. | Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy |
US7024105B2 (en) | 2003-10-10 | 2006-04-04 | Applied Materials Inc. | Substrate heater assembly |
JP4441356B2 (ja) | 2003-10-16 | 2010-03-31 | 東京エレクトロン株式会社 | 成膜装置 |
US7955646B2 (en) | 2004-08-09 | 2011-06-07 | Applied Materials, Inc. | Elimination of flow and pressure gradients in low utilization processes |
US20070187363A1 (en) | 2006-02-13 | 2007-08-16 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
US7431797B2 (en) | 2006-05-03 | 2008-10-07 | Applied Materials, Inc. | Plasma reactor with a dynamically adjustable plasma source power applicator |
US7504041B2 (en) | 2006-05-03 | 2009-03-17 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator |
US7520999B2 (en) | 2006-05-03 | 2009-04-21 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor with dynamic adjustment of the plasma source power applicator and the workpiece relative to one another |
US7419551B2 (en) | 2006-05-03 | 2008-09-02 | Applied Materials, Inc. | Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another |
-
2007
- 2007-12-19 US US11/960,300 patent/US8999106B2/en active Active
-
2008
- 2008-12-15 JP JP2010539685A patent/JP5704923B2/ja active Active
- 2008-12-15 CN CN200880117690.1A patent/CN101874292B/zh active Active
- 2008-12-15 WO PCT/US2008/086885 patent/WO2009085709A1/en active Application Filing
- 2008-12-15 KR KR1020107015878A patent/KR101504084B1/ko active IP Right Grant
- 2008-12-17 TW TW097149222A patent/TWI501336B/zh active
- 2008-12-17 TW TW104108494A patent/TWI534930B/zh active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108630514A (zh) * | 2017-03-22 | 2018-10-09 | 东京毅力科创株式会社 | 基板处理装置 |
CN108630514B (zh) * | 2017-03-22 | 2020-06-26 | 东京毅力科创株式会社 | 基板处理装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20100105695A (ko) | 2010-09-29 |
CN101874292B (zh) | 2013-02-13 |
JP5704923B2 (ja) | 2015-04-22 |
TW200939381A (en) | 2009-09-16 |
KR101504084B1 (ko) | 2015-03-19 |
WO2009085709A1 (en) | 2009-07-09 |
TWI501336B (zh) | 2015-09-21 |
TW201523773A (zh) | 2015-06-16 |
US8999106B2 (en) | 2015-04-07 |
US20090162952A1 (en) | 2009-06-25 |
JP2011510481A (ja) | 2011-03-31 |
TWI534930B (zh) | 2016-05-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101874292B (zh) | 用以控制感应耦合等离子体室中边缘表现的设备与方法 | |
US8062472B2 (en) | Method of correcting baseline skew by a novel motorized source coil assembly | |
US8137463B2 (en) | Dual zone gas injection nozzle | |
KR101124938B1 (ko) | 플라즈마 처리 장치 | |
CN107452616B (zh) | 使用电不对称效应控制等离子体处理空间的系统和方法 | |
US20090162570A1 (en) | Apparatus and method for processing a substrate using inductively coupled plasma technology | |
US7713432B2 (en) | Method and apparatus to improve plasma etch uniformity | |
US20110094997A1 (en) | Plasma processing apparatus and plasma processing method | |
KR101283830B1 (ko) | 전극 피스의 독립적 움직임을 이용한 에칭 레이트 균일성개선 | |
JP2018014337A (ja) | 誘導結合プラズマ(icp)リアクタの電力堆積制御 | |
US10418224B2 (en) | Plasma etching method | |
US9119282B2 (en) | Plasma processing apparatus and plasma processing method | |
TWI466186B (zh) | 消除感應耦合電漿反應器中之m形蝕刻速率分佈之方法 | |
KR100862686B1 (ko) | 플라즈마 조절기 및 이를 구비한 플라즈마 처리 장치 | |
WO2009085808A2 (en) | Apparatus and method for processing a substrate using inductively coupled plasma technology | |
US20160358748A1 (en) | Plasma Processing Apparatus and Coil Used Therein | |
KR20070058727A (ko) | 플라즈마 형성 장치 | |
TW202412563A (zh) | 改善晶圓之電漿處理邊緣均勻性的設備及方法 | |
TW202410158A (zh) | 具有改良均勻性之電漿噴灑頭 | |
TW201724154A (zh) | 具有摻雜的石英表面之電漿蝕刻裝置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: American California Applicant after: Applied Materials Inc. Address before: American California Applicant before: Applied Materials Inc. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |