TW201724154A - 具有摻雜的石英表面之電漿蝕刻裝置 - Google Patents

具有摻雜的石英表面之電漿蝕刻裝置 Download PDF

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TW201724154A
TW201724154A TW105118054A TW105118054A TW201724154A TW 201724154 A TW201724154 A TW 201724154A TW 105118054 A TW105118054 A TW 105118054A TW 105118054 A TW105118054 A TW 105118054A TW 201724154 A TW201724154 A TW 201724154A
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processing chamber
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聖基特 森特
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蘭姆研究公司
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Abstract

提供一種用於處理基板的設備。提供一處理腔室。用於支撐基板的基板支座係在該處理腔室之內。一邊緣環係在該基板支座上，其中該邊緣環包含無氮之摻雜的石英，該無氮之摻雜的石英具有AlO及YO的摻雜劑或LaO的摻雜劑。用於將氣體提供進入該處理腔室的氣體入口係在該基板的表面上方。至少一電極將RF功率提供進入該處理腔室。

Description

具有摻雜的石英表面之電漿蝕刻裝置
本揭示內容關於半導體裝置的製造。更具體而言，本揭示內容關於在製造半導體裝置中使用的抗電漿零件。
在半導體晶圓處理期間，電漿處理腔室係用以處理半導體裝置。
在此背景下所討論的描述及實施例係非認定為先前技術。此等描述係非被認為先前技術。
為實現上述內容且根據本揭示內容之目的，提供一種用於處理基板的設備。提供一處理腔室。用於支撐基板的基板支座係在該處理腔室之內。一邊緣環係在該基板支座上，其中該邊緣環包含無氮之摻雜的石英，該無氮之摻雜的石英具有AlO及YO的摻雜劑或LaO的摻雜劑。用於將氣體提供進入該處理腔室的氣體入口係在該基板的表面上方。至少一電極將RF功率提供進入該處理腔室。
在另一實施例中，提供一種在電漿處理腔室中使用的邊緣環。該邊緣環包含一無氮之摻雜的石英環，其具有AlO及YO的摻雜劑或LaO的摻雜劑。
本揭示內容的這些及其他特徵將以下列本揭示內容的詳細敘述結合下列附圖描述更多細節。
本揭示內容現將參照如隨附圖式中所說明的幾個實施例詳細描述。在以下說明中，為了提供本揭示內容的透徹理解，說明許多具體細節。然而，顯然地，對於熟習本項技術之人士而言，本揭示內容可不具有某些或全部這些具體細節而實施。另一方面，為了不要不必要地模糊本揭示內容，未詳細說明眾所周知的製程步驟及/或結構。
為了便於理解，圖1示意性地說明可在一實施例中加以使用的電漿處理腔室100之例子。電漿處理腔室100包含具有電漿處理侷限腔室104於其中的電漿反應器102。由匹配網路108調諧的電漿電源供應器106將功率供應至位於電力窗（power window）112附近的TCP線圈110，以在電漿處理侷限腔室104內藉由提供感應耦合功率產生電漿114。TCP線圈（上功率源）110可配置成在電漿處理侷限腔室104之內產生均勻的擴散輪廓。例如，TCP線圈110可配置成在電漿114中產生環形功率分布。電力窗112係設置成使TCP線圈110與電漿處理侷限腔室104分開，且同時允許能量從TCP線圈110通至電漿處理侷限腔室104。由匹配網路118調諧的晶圓偏電壓電源供應器116將功率提供至電極120以設定在基板164上的偏電壓，該基板164係由電極120加以支撐。控制器124針對電漿電源供應器106、氣體源/氣體供應機構130、及晶圓偏電壓電源供應器116設定數值。
電漿電源供應器106及晶圓偏電壓電源供應器116可配置成以特定射頻（諸如13.56 MHz、27 MHz、2 MHz、60 MHz、400 kHz、2.54 GHz、或其組合）加以操作。為了達到期望的製程效能，可適當地選擇電漿電源供應器106及晶圓偏電壓電源供應器116的尺寸以供應一範圍的功率。例如：在一實施例中，電漿電源供應器106可供應在50至5000 瓦特範圍內的功率，而晶圓偏電壓電源供應器116可供應在20至2000 V範圍內的偏電壓。此外，TCP線圈110及/或電極120可由二個以上子線圈或子電極構成，該等子線圈或子電極可藉由單一電源供應器加以供電或藉由多個電源供應器加以供電。
如圖1所示，電漿處理腔室100進一步包含氣體源/氣體供應機構130。氣體源係經由氣體入口（諸如氣體注射器140）與電漿處理侷限腔室104流體連接。氣體注射器140可位在電漿處理侷限腔室104中的任何有利位置，且可採用任何形式噴注氣體。然而，較佳是，氣體入口可配置成產生「可調整的」氣體噴注輪廓，該「可調整的」氣體噴注輪廓允許流至電漿處理侷限腔室104中的多個區域之各氣體流的獨立調整。處理氣體及副產物係經由壓力控制閥142及幫浦144自電漿處理侷限腔室104加以移除，該壓力控制閥142及幫浦144亦用以維持在電漿處理侷限腔室104之內的特定壓力。壓力控制閥142可在處理期間維持低於1托的壓力。邊緣環160係放置在晶圓164周圍。氣體源/氣體供應機構130係由控制器124加以控制。由Lam Research Corp. of Fremont, CA生產的Kiyo可用以實現實施例。
較佳是，邊緣環160包含抗電漿玻璃，諸如摻雜的石英。更佳是，邊緣環160包含無氮之摻雜的石英。最佳是，邊緣環160包含具有氧化鋁及氧化釔的摻雜劑或氧化鑭的摻雜劑之無氮之摻雜的石英。在一實施例中，摻雜劑的比例係在分子數目的6%至20%之間。更佳是，摻雜劑的比例係在10%和15%之間。較佳是，鋁對釔的分子數目比例係在1：3至1：1的範圍內。較佳是，具有氧化鑭的摻雜劑之摻雜的石英亦具有氧化鋁的摻雜劑。較佳是，鋁對鑭的比例係在5：13至15：13的範圍內。
雖然本揭示內容已由幾個實施例加以描述，但仍存在變更、置換、變化及各種替代等同物，其皆落入本揭示內容的範疇之內。亦應注意有許多替代的方式實施本揭示內容的方法及裝置。因此，下列隨附申請專利範圍意欲被解釋為包含落入本揭示內容的真實精神及範圍內的所有這些變更、置換及各種替代等同物。
100‧‧‧電漿處理腔室
102‧‧‧電漿反應器
104‧‧‧電漿處理侷限腔室
106‧‧‧電漿電源供應器
108‧‧‧匹配網路
110‧‧‧TCP線圈
112‧‧‧電力窗
114‧‧‧電漿
116‧‧‧晶圓偏電壓電源供應器
118‧‧‧匹配網路
120‧‧‧電極
124‧‧‧控制器
130‧‧‧氣體源/氣體供應機構
140‧‧‧氣體注射器
142‧‧‧壓力控制閥
144‧‧‧幫浦
160‧‧‧邊緣環
164‧‧‧基板/晶圓
在隨附圖式的圖中，本揭示內容係以示例為目的而不是以限制為目的加以說明，且其中類似的參考數字係關於相似的元件，且其中：
圖1示意性地說明電漿處理腔室的例子。
100‧‧‧電漿處理腔室
102‧‧‧電漿反應器
104‧‧‧電漿處理侷限腔室
106‧‧‧電漿電源供應器
108‧‧‧匹配網路
110‧‧‧TCP線圈
112‧‧‧電力窗
114‧‧‧電漿
116‧‧‧晶圓偏電壓電源供應器
118‧‧‧匹配網路
120‧‧‧電極
124‧‧‧控制器
130‧‧‧氣體源/氣體供應機構
140‧‧‧氣體注射器
142‧‧‧壓力控制閥
144‧‧‧幫浦
160‧‧‧邊緣環
164‧‧‧基板/晶圓

Claims (18)

  1. 一種用於處理一基板的設備，包含： 一處理腔室； 一基板支座，用於在該處理腔室之內支撐該基板； 一邊緣環，在該基板支座上，其中該邊緣環包含無氮之摻雜的石英，該無氮之摻雜的石英具有AlO及YO的摻雜劑或LaO的摻雜劑； 在該基板表面上方的一氣體入口，用於將氣體提供進入該處理腔室；以及 至少一電極，用於將RF功率提供進入該處理腔室。
  2. 如申請專利範圍第1項之用於處理一基板的設備，其中，摻雜劑的比例係在6%和20%（包含6%及20%）之間。
  3. 如申請專利範圍第1項之用於處理一基板的設備，其中，該摻雜劑係氧化鋁及氧化釔，其中氧化鋁對氧化釔的比例係在1：3和1：1（包含1：3及1：1）之間。
  4. 如申請專利範圍第1項之用於處理一基板的設備，其中，該摻雜劑包含氧化鑭。
  5. 如申請專利範圍第4項之用於處理一基板的設備，其中，該摻雜劑進一步包含氧化鋁。
  6. 如申請專利範圍第5項之用於處理一基板的設備，其中，氧化鋁對氧化鑭的比例係在5：13和15：13（包含5：13及15：13）之間。
  7. 如申請專利範圍第1項之用於處理一基板的設備，其中，摻雜劑的比例係在10%和15%（包含10%及15%）之間。
  8. 一種在電漿處理腔室中使用的邊緣環，包含一無氮之摻雜的石英環，其具有AlO及YO的摻雜劑或LaO的摻雜劑。
  9. 如申請專利範圍第8項之在電漿處理腔室中使用的邊緣環，其中，摻雜劑的比例係在6%和20%（包含6%及20%）之間。
  10. 如申請專利範圍第8項之在電漿處理腔室中使用的邊緣環，其中，該摻雜劑係氧化鋁及氧化釔，其中氧化鋁對氧化釔的比例係在1：3和1：1（包含1：3及1：1）之間。
  11. 如申請專利範圍第8項之在電漿處理腔室中使用的邊緣環，其中，該摻雜劑包含氧化鑭。
  12. 如申請專利範圍第11項之在電漿處理腔室中使用的邊緣環，其中，該摻雜劑進一步包含氧化鋁。
  13. 一種在電漿處理腔室中使用的邊緣環，包含一摻雜的石英環。
  14. 如申請專利範圍第13項之在電漿處理腔室中使用的邊緣環，其中，該摻雜的石英環係一無氮之摻雜的石英環。
  15. 如申請專利範圍第13項之在電漿處理腔室中使用的邊緣環，其中，該摻雜的石英環係摻雜包含AlO及YO的摻雜劑或摻雜LaO的摻雜劑。
  16. 一種用於處理一基板的設備，包含： 一處理腔室； 一基板支座，用於在該處理腔室之內支撐該基板； 一邊緣環，在該基板支座上，其中該邊緣環包含摻雜的石英； 在該基板表面上方的一氣體入口，用於將氣體提供進入該處理腔室；以及 至少一電極，用於將RF功率提供進入該處理腔室。
  17. 如申請專利範圍第16項之用於處理一基板的設備，其中，該摻雜的石英環係一無氮之摻雜的石英環。
  18. 如申請專利範圍第16項之用於處理一基板的設備，其中，該摻雜的石英環係摻雜包含AlO及YO的摻雜劑或摻雜LaO的摻雜劑。
TW105118054A 2015-06-11 2016-06-08 具有摻雜的石英表面之電漿蝕刻裝置 TW201724154A (zh)

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JP4439192B2 (ja) * 2002-03-11 2010-03-24 東ソー株式会社 高耐久性石英ガラス、製造方法、これを用いた部材及び装置
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