JP5704923B2 - 誘導結合プラズマチャンバの縁部性能を制御するための装置および方法 - Google Patents
誘導結合プラズマチャンバの縁部性能を制御するための装置および方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 52
- 238000009616 inductively coupled plasma Methods 0.000 title description 13
- 239000000758 substrate Substances 0.000 claims description 158
- 238000012545 processing Methods 0.000 claims description 48
- 230000008569 process Effects 0.000 claims description 39
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 23
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 238000012937 correction Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- -1 nitrogen ions Chemical class 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Description
Claims (12)
- 処理容積部を取り囲むチャンバ本体と、
前記処理容積部に処理ガスを流すように構成されたガス注入口と、
上部プレートを有し前記処理容積部に配置された支持ペデスタルとを備える、基板を処理するための装置であって、
前記上部プレートは、
実質的にプレート形状を有する本体であって、
基板を裏面で受け取り支持するように構成された基板支持表面であって、前記基板の直径よりも小さい外径を有するリングの上部表面である前記基板支持表面と、
前記上部プレートの上部表面上の前記基板支持表面に囲まれた凹部と、
前記基板支持表面を囲んで径方向外側に前記基板支持表面から延びる縁部表面と、
前記基板支持表面から径方向外側に前記上部プレートから突き出る複数の支持アイランドであって、前記基板支持表面よりも鉛直方向に高く、前記基板が滑って離れないように構成される前記複数の支持アイランドと、
を有する前記本体と、
前記本体の前記縁部表面上に配置される、前記複数の支持アイランドの径方向外側の縁部リングであって、前記基板の上部表面と前記縁部リングの上部表面が高度差を有して配置される前記縁部リングとを備える、
前記基板を処理するための装置。 - 前記縁部表面が前記基板の前記上部表面よりも鉛直方向に低い、請求項1に記載の装置。
- 前記基板の前記上部表面と前記縁部表面との間の高度差が6.25ミリ(0.25インチ)から12.70ミリ(0.5インチ)の範囲内にある、請求項2に記載の装置。
- 前記上部プレートの前記本体が石英を含む、請求項1ないし3のいずれか1項に記載の装置。
- 前記複数の支持アイランドの各々の内面が前記基板支持表面の外側縁部から溝によって分離されている、請求項1ないし4のいずれか1項に記載の装置。
- 前記上部プレートに形成された複数のピン孔と、
前記複数のピン孔に移動可能に配置された複数の持上げピンとをさらに備える、請求項1ないし5のいずれか1項に記載の装置。 - 前記複数の持上げピンが前記基板の上昇を調整するために使用され、それにより、処理の間、前記基板と前記縁部表面の間の高度差を調整することができるようになっている、請求項6に記載の装置。
- 処理チャンバの支持ペデスタル用上部プレートにおいて、
実質的にプレート形状を有する本体であって、
基板を裏面で受け取り支持するように構成された基板支持表面であって、前記基板の直径よりも小さい外径を有するリングの上部表面である前記基板支持表面と、
前記上部プレートの上部表面上の前記基板支持表面に囲まれた凹部と、
前記基板支持表面を囲んで径方向外側に前記基板支持表面から延びる縁部表面と、
前記基板支持表面から径方向外側に前記本体から突き出る複数の支持アイランドであって、前記基板支持表面よりも鉛直方向に高く、前記基板が滑って離れないように構成される前記複数の支持アイランドとを有する
前記本体と、
前記本体の前記縁部表面上に配置される、前記複数の支持アイランドの径方向外側の縁部リングであって、前記基板の上部表面と前記縁部リングの上部表面が高度差を有して配置される前記縁部リングとを備える、処理チャンバの支持ペデスタル用上部プレート。 - 前記本体が石英を含む、請求項8に記載の上部プレート。
- 請求項1ないし7のいずれか1項に記載の装置に配置される基板の処理方法であって、
前記基板を前記基板支持表面に位置決めすることと、
前記処理ガスを前記装置内に流すことと、
前記基板を前記処理ガスで処理することとを含み、
前記基板の上部表面と前記縁部リングの上部表面との間の高度差が、前記装置内に流された前記処理ガスへの前記基板の縁部領域の暴露を制御するのに使用される、方法。 - 前記基板を前記処理ガスで処理することが、前記処理ガスへの前記縁部領域の暴露を増加させるように前記縁部リングの上部表面を降下させることを含む、請求項10に記載の方法。
- 前記基板を前記処理ガスで処理することが、前記処理ガスへの前記縁部領域の暴露を減少させるように前記縁部リングの上部表面を上昇させることを含む、請求項10に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US11/960,300 | 2007-12-19 | ||
US11/960,300 US8999106B2 (en) | 2007-12-19 | 2007-12-19 | Apparatus and method for controlling edge performance in an inductively coupled plasma chamber |
PCT/US2008/086885 WO2009085709A1 (en) | 2007-12-19 | 2008-12-15 | Apparatus and method for controlling edge performance in an inductively coupled plasma chamber |
Publications (3)
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JP2011510481A JP2011510481A (ja) | 2011-03-31 |
JP2011510481A5 JP2011510481A5 (ja) | 2012-02-02 |
JP5704923B2 true JP5704923B2 (ja) | 2015-04-22 |
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US (1) | US8999106B2 (ja) |
JP (1) | JP5704923B2 (ja) |
KR (1) | KR101504084B1 (ja) |
CN (1) | CN101874292B (ja) |
TW (2) | TWI501336B (ja) |
WO (1) | WO2009085709A1 (ja) |
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US20090162952A1 (en) | 2009-06-25 |
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CN101874292B (zh) | 2013-02-13 |
US8999106B2 (en) | 2015-04-07 |
TWI501336B (zh) | 2015-09-21 |
WO2009085709A1 (en) | 2009-07-09 |
KR20100105695A (ko) | 2010-09-29 |
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