JP2011506758A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2011506758A5 JP2011506758A5 JP2010526899A JP2010526899A JP2011506758A5 JP 2011506758 A5 JP2011506758 A5 JP 2011506758A5 JP 2010526899 A JP2010526899 A JP 2010526899A JP 2010526899 A JP2010526899 A JP 2010526899A JP 2011506758 A5 JP2011506758 A5 JP 2011506758A5
- Authority
- JP
- Japan
- Prior art keywords
- gas material
- substrate
- reactive gas
- thin film
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims 35
- 239000000463 material Substances 0.000 claims 31
- 238000000034 method Methods 0.000 claims 21
- 239000000758 substrate Substances 0.000 claims 14
- 238000000151 deposition Methods 0.000 claims 6
- 230000008021 deposition Effects 0.000 claims 6
- 239000010409 thin film Substances 0.000 claims 6
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 150000002738 metalloids Chemical group 0.000 claims 4
- 238000000427 thin-film deposition Methods 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical group N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 238000000231 atomic layer deposition Methods 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical group [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 125000003277 amino group Chemical group 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 230000004888 barrier function Effects 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 150000004985 diamines Chemical class 0.000 claims 1
- 150000002009 diols Chemical class 0.000 claims 1
- 150000004662 dithiols Chemical class 0.000 claims 1
- 125000000524 functional group Chemical group 0.000 claims 1
- 239000001257 hydrogen Chemical group 0.000 claims 1
- 229910052739 hydrogen Chemical group 0.000 claims 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Chemical group 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 238000010926 purge Methods 0.000 claims 1
- LOAUVZALPPNFOQ-UHFFFAOYSA-N quinaldic acid Chemical class C1=CC=CC2=NC(C(=O)O)=CC=C21 LOAUVZALPPNFOQ-UHFFFAOYSA-N 0.000 claims 1
- 239000000376 reactant Substances 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 125000003396 thiol group Chemical group [H]S* 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000012855 volatile organic compound Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/861,618 US7858144B2 (en) | 2007-09-26 | 2007-09-26 | Process for depositing organic materials |
| PCT/US2008/010801 WO2009042051A2 (en) | 2007-09-26 | 2008-09-17 | Process for depositing organic materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011506758A JP2011506758A (ja) | 2011-03-03 |
| JP2011506758A5 true JP2011506758A5 (https=) | 2011-11-10 |
Family
ID=40377691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010526899A Pending JP2011506758A (ja) | 2007-09-26 | 2008-09-17 | 有機材料を堆積する方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7858144B2 (https=) |
| EP (1) | EP2210270B1 (https=) |
| JP (1) | JP2011506758A (https=) |
| CN (1) | CN102027603B (https=) |
| WO (1) | WO2009042051A2 (https=) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080166880A1 (en) * | 2007-01-08 | 2008-07-10 | Levy David H | Delivery device for deposition |
| US11136667B2 (en) * | 2007-01-08 | 2021-10-05 | Eastman Kodak Company | Deposition system and method using a delivery head separated from a substrate by gas pressure |
| US7789961B2 (en) * | 2007-01-08 | 2010-09-07 | Eastman Kodak Company | Delivery device comprising gas diffuser for thin film deposition |
| US8211231B2 (en) * | 2007-09-26 | 2012-07-03 | Eastman Kodak Company | Delivery device for deposition |
| US8398770B2 (en) * | 2007-09-26 | 2013-03-19 | Eastman Kodak Company | Deposition system for thin film formation |
| US20110206909A1 (en) * | 2008-10-31 | 2011-08-25 | Sundew Technologies Llc | Coatings for suppressing metallic whiskers |
| KR101639230B1 (ko) | 2008-12-04 | 2016-07-13 | 비코 인스트루먼츠 인코포레이티드 | 화학 기상 증착 유동물 유입구 부재 및 방법 |
| WO2010135107A1 (en) * | 2009-05-11 | 2010-11-25 | Regents Of The University Of Colorado, A Body Corporate | Ultra-thin metal oxide and carbon-metal oxide films prepared by atomic layer deposition (ald) |
| JP5096437B2 (ja) * | 2009-09-28 | 2012-12-12 | 株式会社ジャパンディスプレイイースト | 有機ｅｌ表示装置 |
| US9176377B2 (en) | 2010-06-01 | 2015-11-03 | Inpria Corporation | Patterned inorganic layers, radiation based patterning compositions and corresponding methods |
| FI20105908A0 (fi) * | 2010-08-30 | 2010-08-30 | Beneq Oy | Laite |
| JP5966618B2 (ja) * | 2012-05-28 | 2016-08-10 | 東京エレクトロン株式会社 | 成膜方法 |
| KR101435100B1 (ko) * | 2012-06-20 | 2014-08-29 | 주식회사 엠티에스나노테크 | 원자층 증착 장치 |
| DE102012214411B4 (de) * | 2012-08-14 | 2022-05-25 | Osram Oled Gmbh | Vorrichtung und verfahren zum herstellen hermetisch dichter kavitäten |
| US20140206137A1 (en) * | 2013-01-23 | 2014-07-24 | David H. Levy | Deposition system for thin film formation |
| TW201435132A (zh) * | 2013-02-22 | 2014-09-16 | 應用材料股份有限公司 | 包含ＳｉＯＣ的膜的催化性原子層沉積 |
| KR102075528B1 (ko) * | 2013-05-16 | 2020-03-03 | 삼성디스플레이 주식회사 | 증착장치, 유기발광 디스플레이 장치 제조방법 및 유기발광 디스플레이 장치 |
| PL3003286T3 (pl) * | 2013-05-24 | 2022-10-10 | Nanexa Ab | Sposób wytwarzania stałych nanocząstek z nieorganiczną powłoką i ich zastosowanie |
| US9310684B2 (en) | 2013-08-22 | 2016-04-12 | Inpria Corporation | Organometallic solution based high resolution patterning compositions |
| EP3040442B1 (en) | 2013-08-30 | 2024-02-14 | IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | Functional thin films comprising an hybrid organic/inorganic thin films and method of manufacturing same |
| CN103510074A (zh) * | 2013-10-25 | 2014-01-15 | 南京大学 | 基于ald技术的复合无机-有机杂化物薄膜的制备方法 |
| EP3124166B1 (en) * | 2014-03-25 | 2019-10-23 | Sumitomo Metal Mining Co., Ltd. | Coated solder material and method for producing same |
| SG11201609703QA (en) * | 2014-06-12 | 2016-12-29 | Basf Coatings Gmbh | Process for producing flexible organic-inorganic laminates |
| US11639549B2 (en) | 2014-06-13 | 2023-05-02 | Basf Coatings Gmbh | Process for producing organic-inorganic laminates |
| GB201412201D0 (en) * | 2014-07-09 | 2014-08-20 | Isis Innovation | Two-step deposition process |
| JP6420706B2 (ja) * | 2015-04-07 | 2018-11-07 | 信越化学工業株式会社 | 太陽電池用パッシベーション膜形成方法及び太陽電池用パッシベーション膜形成装置 |
| CA2987938C (en) * | 2015-06-01 | 2023-09-26 | Pneumaticoat Technologies Llc | Nano-engineered coatings for anode active materials, cathode active materials, and solid-state electrolytes and methods of making batteries containing nano-engineered coatings |
| KR102420015B1 (ko) * | 2015-08-28 | 2022-07-12 | 삼성전자주식회사 | Cs-ald 장치의 샤워헤드 |
| US10865477B2 (en) * | 2016-02-08 | 2020-12-15 | Illinois Tool Works Inc. | Method and system for the localized deposit of metal on a surface |
| CN106086812B (zh) * | 2016-07-20 | 2018-08-03 | 南京航空航天大学 | 一种金属表面防腐蚀耐磨损的复合涂层及其制备方法 |
| US10400332B2 (en) * | 2017-03-14 | 2019-09-03 | Eastman Kodak Company | Deposition system with interlocking deposition heads |
| US12006570B2 (en) * | 2017-08-31 | 2024-06-11 | Uchicago Argonne, Llc | Atomic layer deposition for continuous, high-speed thin films |
| CN108448006B (zh) * | 2018-03-29 | 2021-01-22 | 京东方科技集团股份有限公司 | 封装结构、电子装置以及封装方法 |
| US10673046B2 (en) * | 2018-04-13 | 2020-06-02 | GM Global Technology Operations LLC | Separator for lithium metal based batteries |
| GB2585077A (en) | 2019-06-28 | 2020-12-30 | Nanexa Ab | Apparatus |
| WO2021059332A1 (ja) * | 2019-09-24 | 2021-04-01 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 基板処理装置、半導体装置の製造方法およびプログラム |
| US20220359332A1 (en) * | 2021-05-09 | 2022-11-10 | Spts Technologies Limited | Temporary passivation layer on a substrate |
| CN115821229A (zh) * | 2022-11-25 | 2023-03-21 | 江苏微导纳米科技股份有限公司 | 一种用于沉积薄膜的方法和设备以及薄膜 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI57975C (fi) * | 1979-02-28 | 1980-11-10 | Lohja Ab Oy | Foerfarande och anordning vid uppbyggande av tunna foereningshinnor |
| US6337102B1 (en) * | 1997-11-17 | 2002-01-08 | The Trustees Of Princeton University | Low pressure vapor phase deposition of organic thin films |
| US6316098B1 (en) * | 1998-03-27 | 2001-11-13 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Molecular layer epitaxy method and compositions |
| US6783849B2 (en) * | 1998-03-27 | 2004-08-31 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Molecular layer epitaxy method and compositions |
| US7476420B2 (en) * | 2000-10-23 | 2009-01-13 | Asm International N.V. | Process for producing metal oxide films at low temperatures |
| FI118014B (fi) * | 2000-10-23 | 2007-05-31 | Asm Int | Menetelmä alumiinioksidiohutkalvojen valmistamiseksi matalissa lämpötiloissa |
| KR20030057133A (ko) * | 2001-12-28 | 2003-07-04 | 삼성전자주식회사 | 금속 패턴 형성용 유기금속 전구체 및 이를 이용한 금속패턴 형성방법 |
| US7067439B2 (en) * | 2002-06-14 | 2006-06-27 | Applied Materials, Inc. | ALD metal oxide deposition process using direct oxidation |
| US20050084610A1 (en) * | 2002-08-13 | 2005-04-21 | Selitser Simon I. | Atmospheric pressure molecular layer CVD |
| US6821563B2 (en) * | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
| JP4108633B2 (ja) * | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
| JP2005089781A (ja) * | 2003-09-12 | 2005-04-07 | Mitsui Eng & Shipbuild Co Ltd | 薄膜形成装置 |
| JP2007531236A (ja) * | 2004-05-18 | 2007-11-01 | メカロニクス カンパニー リミテッド | 有機発光層形成方法 |
| JP4363365B2 (ja) * | 2004-07-20 | 2009-11-11 | 株式会社デンソー | カラー有機ｅｌディスプレイおよびその製造方法 |
| NO20045674D0 (no) * | 2004-12-28 | 2004-12-28 | Uni I Oslo | Thin films prepared with gas phase deposition technique |
| CN1937175B (zh) * | 2005-09-20 | 2012-10-03 | 中芯国际集成电路制造(上海)有限公司 | 用于半导体器件的使用大气压的材料原子层沉积的方法 |
| US20070077349A1 (en) * | 2005-09-30 | 2007-04-05 | Eastman Kodak Company | Patterning OLED device electrodes and optical material |
| US7754906B2 (en) * | 2005-10-07 | 2010-07-13 | Air Products And Chemicals, Inc. | Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides |
| JP2009529579A (ja) * | 2006-03-10 | 2009-08-20 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | チタネート、ランタネート及びタンタレート誘電体の膜の原子層堆積及び化学蒸着のための前駆体組成物 |
| US7456429B2 (en) * | 2006-03-29 | 2008-11-25 | Eastman Kodak Company | Apparatus for atomic layer deposition |
| US20080100202A1 (en) * | 2006-11-01 | 2008-05-01 | Cok Ronald S | Process for forming oled conductive protective layer |
| US7722422B2 (en) * | 2007-05-21 | 2010-05-25 | Global Oled Technology Llc | Device and method for improved power distribution for a transparent electrode |
| US7572686B2 (en) * | 2007-09-26 | 2009-08-11 | Eastman Kodak Company | System for thin film deposition utilizing compensating forces |
| US8133555B2 (en) * | 2008-10-14 | 2012-03-13 | Asm Japan K.K. | Method for forming metal film by ALD using beta-diketone metal complex |
-
2007
- 2007-09-26 US US11/861,618 patent/US7858144B2/en not_active Expired - Fee Related
-
2008
- 2008-09-17 WO PCT/US2008/010801 patent/WO2009042051A2/en not_active Ceased
- 2008-09-17 JP JP2010526899A patent/JP2011506758A/ja active Pending
- 2008-09-17 EP EP08833728.2A patent/EP2210270B1/en not_active Not-in-force
- 2008-09-17 CN CN2008801088120A patent/CN102027603B/zh not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2011506758A5 (https=) | ||
| JP2011501877A5 (https=) | ||
| JP2010541159A5 (https=) | ||
| JP2010517292A5 (https=) | ||
| WO2009042051A3 (en) | Process for depositing organic materials | |
| JP4564570B2 (ja) | 原子層堆積装置 | |
| JP2010541237A5 (https=) | ||
| WO2009042052A3 (en) | Process for forming thin film encapsulation layers | |
| KR20110084110A (ko) | 기체 및 수분 차단용 그래핀 보호막, 이의 형성 방법 및 그의 용도 | |
| FI20105901L (fi) | Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi | |
| JP2011501779A5 (https=) | ||
| CN104364419A (zh) | 通过原子层沉积来涂覆衬底卷式基材 | |
| JP2010540773A5 (https=) | ||
| WO2010054075A3 (en) | Plasma and thermal anneal treatment to improve oxidation resistance of metal-containing films | |
| EP3052469A1 (en) | Amine precursors for depositing graphene | |
| JP2008513781A5 (https=) | ||
| JP2011500480A5 (https=) | ||
| TW200704819A (en) | Method for silicon based dielectric chemical vapor deposition | |
| WO2012070385A1 (ja) | グラフェンを含む導電性薄膜および透明導電膜 | |
| JP2010541242A5 (https=) | ||
| US20220223411A1 (en) | Methods for depositing gap-filling fluids and related systems and devices | |
| TW200746441A (en) | Manufacturing method of thin film transistor and thin film transistor, and display | |
| JP2005089781A (ja) | 薄膜形成装置 | |
| CN105848880A (zh) | 层叠膜和柔性电子器件 | |
| WO2013149572A1 (zh) | 规模化连续制备二维纳米薄膜的装备 |