JP2011504299A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2011504299A5 JP2011504299A5 JP2010534950A JP2010534950A JP2011504299A5 JP 2011504299 A5 JP2011504299 A5 JP 2011504299A5 JP 2010534950 A JP2010534950 A JP 2010534950A JP 2010534950 A JP2010534950 A JP 2010534950A JP 2011504299 A5 JP2011504299 A5 JP 2011504299A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- copper
- thin film
- bevel edge
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 48
- 239000010949 copper Substances 0.000 claims description 37
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 36
- 229910052802 copper Inorganic materials 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 29
- 239000005749 Copper compound Substances 0.000 claims description 22
- 150000001880 copper compounds Chemical class 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 19
- 239000012530 fluid Substances 0.000 claims description 11
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 238000001039 wet etching Methods 0.000 claims description 7
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims 22
- 239000000460 chlorine Substances 0.000 claims 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 230000004888 barrier function Effects 0.000 claims 2
- 229910052801 chlorine Inorganic materials 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 2
- 229910017604 nitric acid Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 238000005530 etching Methods 0.000 description 4
- -1 CuO E Chemical class 0.000 description 3
- 239000010408 film Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US98950507P | 2007-11-21 | 2007-11-21 | |
| US60/989,505 | 2007-11-21 | ||
| PCT/US2008/012842 WO2009070216A1 (en) | 2007-11-21 | 2008-11-13 | Bevel plasma treatment to enhance wet edge clean |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011504299A JP2011504299A (ja) | 2011-02-03 |
| JP2011504299A5 true JP2011504299A5 (https=) | 2012-01-12 |
| JP5184644B2 JP5184644B2 (ja) | 2013-04-17 |
Family
ID=40678889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010534950A Active JP5184644B2 (ja) | 2007-11-21 | 2008-11-13 | 湿式エッジ洗浄を強化するためのベベルプラズマ処理 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP5184644B2 (https=) |
| KR (1) | KR101532456B1 (https=) |
| CN (1) | CN101868849B (https=) |
| SG (1) | SG186015A1 (https=) |
| TW (1) | TWI398914B (https=) |
| WO (1) | WO2009070216A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101764087B (zh) * | 2010-01-21 | 2013-04-10 | 复旦大学 | 一种铜与低介电常数材料集成的方法 |
| KR101458799B1 (ko) * | 2013-10-11 | 2014-11-07 | 조인셋 주식회사 | 연성 금속 적층필름 및 그 제조방법 |
| US9748140B1 (en) * | 2016-05-13 | 2017-08-29 | Infineon Technologies Ag | Method of manufacturing semiconductor devices |
| CN113950732A (zh) * | 2019-05-15 | 2022-01-18 | 应用材料公司 | 用于基板处理的斜面剥离及缺陷解决方案 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6537416B1 (en) * | 1999-10-01 | 2003-03-25 | Novellus Systems, Inc. | Wafer chuck for use in edge bevel removal of copper from silicon wafers |
| US6333275B1 (en) * | 1999-10-01 | 2001-12-25 | Novellus Systems, Inc. | Etchant mixing system for edge bevel removal of copper from silicon wafers |
| JP3953265B2 (ja) * | 1999-10-06 | 2007-08-08 | 株式会社荏原製作所 | 基板洗浄方法及びその装置 |
| US6589882B2 (en) * | 2001-10-24 | 2003-07-08 | Micron Technology, Inc. | Copper post-etch cleaning process |
| US7540935B2 (en) * | 2003-03-14 | 2009-06-02 | Lam Research Corporation | Plasma oxidation and removal of oxidized material |
| JP4122004B2 (ja) * | 2003-05-12 | 2008-07-23 | 株式会社ソスル | プラズマエッチングチャンバーと、これを用いたプラズマエッチングシステ厶 |
| US7323080B2 (en) * | 2004-05-04 | 2008-01-29 | Semes Co., Ltd. | Apparatus for treating substrate |
| US20060172538A1 (en) * | 2004-12-03 | 2006-08-03 | Herman Itzkowitz | Wet etching the edge and bevel of a silicon wafer |
| US7256148B2 (en) * | 2005-05-12 | 2007-08-14 | International Business Machines Corporation | Method for treating a wafer edge |
| US7909960B2 (en) * | 2005-09-27 | 2011-03-22 | Lam Research Corporation | Apparatus and methods to remove films on bevel edge and backside of wafer |
-
2008
- 2008-11-13 CN CN2008801176494A patent/CN101868849B/zh active Active
- 2008-11-13 SG SG2012085171A patent/SG186015A1/en unknown
- 2008-11-13 JP JP2010534950A patent/JP5184644B2/ja active Active
- 2008-11-13 WO PCT/US2008/012842 patent/WO2009070216A1/en not_active Ceased
- 2008-11-13 KR KR1020107013634A patent/KR101532456B1/ko active Active
- 2008-11-21 TW TW097145168A patent/TWI398914B/zh active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8759214B2 (en) | Method of etching a semiconductor wafer | |
| CN103915330B (zh) | 基片刻蚀方法 | |
| JPH0758079A (ja) | キセノンを用いたプラズマエッチング | |
| WO2009057764A1 (ja) | エッチング方法およびそれを用いた光／電子デバイスの製造方法 | |
| TW200402791A (en) | Method for removing photoresist and etch residues | |
| WO2008005630B1 (en) | Methods for minimizing mask undercuts and notches for plasma processing system | |
| CN107039345B (zh) | 元件芯片的制造方法以及元件芯片 | |
| JP2009530861A5 (https=) | ||
| TWI461378B (zh) | 具波浪形表面之玻璃基板的製造方法 | |
| WO2012108445A1 (ja) | プラズマエッチング方法 | |
| TWI654651B (zh) | 半導體基板之蝕刻方法 | |
| JP2011504299A5 (https=) | ||
| JP5167052B2 (ja) | ドライエッチング方法 | |
| CN104241131B (zh) | 金属栅极晶体管的形成方法 | |
| JP6444805B2 (ja) | 半導体チップの製造方法 | |
| JP5184644B2 (ja) | 湿式エッジ洗浄を強化するためのベベルプラズマ処理 | |
| KR20130063089A (ko) | 반도체 소자의 트렌치 형성 방법 | |
| JP4774006B2 (ja) | エッチング方法 | |
| MY149338A (en) | Notch stop pulsing process for plasma processing system | |
| KR20160125588A (ko) | 반도체 구조 및 이의 제조 방법 | |
| JP5886214B2 (ja) | プラズマエッチング方法 | |
| CN103000495B (zh) | 一种基板制备方法 | |
| US7479235B2 (en) | Method for etching a workpiece | |
| CN104701241B (zh) | 半导体器件的边角蚀刻方法 | |
| JP2004207715A5 (https=) |