KR101532456B1 - 습식 에지 세정을 향상시키는 베벨 플라즈마 처리 - Google Patents

습식 에지 세정을 향상시키는 베벨 플라즈마 처리 Download PDF

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Publication number
KR101532456B1
KR101532456B1 KR1020107013634A KR20107013634A KR101532456B1 KR 101532456 B1 KR101532456 B1 KR 101532456B1 KR 1020107013634 A KR1020107013634 A KR 1020107013634A KR 20107013634 A KR20107013634 A KR 20107013634A KR 101532456 B1 KR101532456 B1 KR 101532456B1
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South Korea
Prior art keywords
copper
substrate
edge
beveled edge
plasma
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KR1020107013634A
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English (en)
Korean (ko)
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KR20100108345A (ko
Inventor
3세 앤드류 디 베일리
윤상 김
Original Assignee
램 리써치 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020107013634A 2007-11-21 2008-11-13 습식 에지 세정을 향상시키는 베벨 플라즈마 처리 Active KR101532456B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US98950507P 2007-11-21 2007-11-21
US60/989,505 2007-11-21
PCT/US2008/012842 WO2009070216A1 (en) 2007-11-21 2008-11-13 Bevel plasma treatment to enhance wet edge clean

Publications (2)

Publication Number Publication Date
KR20100108345A KR20100108345A (ko) 2010-10-06
KR101532456B1 true KR101532456B1 (ko) 2015-06-29

Family

ID=40678889

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107013634A Active KR101532456B1 (ko) 2007-11-21 2008-11-13 습식 에지 세정을 향상시키는 베벨 플라즈마 처리

Country Status (6)

Country Link
JP (1) JP5184644B2 (https=)
KR (1) KR101532456B1 (https=)
CN (1) CN101868849B (https=)
SG (1) SG186015A1 (https=)
TW (1) TWI398914B (https=)
WO (1) WO2009070216A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020231612A1 (en) * 2019-05-15 2020-11-19 Applied Materials, Inc. Bevel peeling and defectivity solution for substrate processing

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101764087B (zh) * 2010-01-21 2013-04-10 复旦大学 一种铜与低介电常数材料集成的方法
KR101458799B1 (ko) * 2013-10-11 2014-11-07 조인셋 주식회사 연성 금속 적층필름 및 그 제조방법
US9748140B1 (en) * 2016-05-13 2017-08-29 Infineon Technologies Ag Method of manufacturing semiconductor devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6333275B1 (en) * 1999-10-01 2001-12-25 Novellus Systems, Inc. Etchant mixing system for edge bevel removal of copper from silicon wafers
US20060128152A1 (en) * 2003-03-14 2006-06-15 Lam Research Corporation Plasma oxidation and removal of oxidized material

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6537416B1 (en) * 1999-10-01 2003-03-25 Novellus Systems, Inc. Wafer chuck for use in edge bevel removal of copper from silicon wafers
JP3953265B2 (ja) * 1999-10-06 2007-08-08 株式会社荏原製作所 基板洗浄方法及びその装置
US6589882B2 (en) * 2001-10-24 2003-07-08 Micron Technology, Inc. Copper post-etch cleaning process
JP4122004B2 (ja) * 2003-05-12 2008-07-23 株式会社ソスル プラズマエッチングチャンバーと、これを用いたプラズマエッチングシステ厶
US7323080B2 (en) * 2004-05-04 2008-01-29 Semes Co., Ltd. Apparatus for treating substrate
US20060172538A1 (en) * 2004-12-03 2006-08-03 Herman Itzkowitz Wet etching the edge and bevel of a silicon wafer
US7256148B2 (en) * 2005-05-12 2007-08-14 International Business Machines Corporation Method for treating a wafer edge
US7909960B2 (en) * 2005-09-27 2011-03-22 Lam Research Corporation Apparatus and methods to remove films on bevel edge and backside of wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6333275B1 (en) * 1999-10-01 2001-12-25 Novellus Systems, Inc. Etchant mixing system for edge bevel removal of copper from silicon wafers
US20060128152A1 (en) * 2003-03-14 2006-06-15 Lam Research Corporation Plasma oxidation and removal of oxidized material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020231612A1 (en) * 2019-05-15 2020-11-19 Applied Materials, Inc. Bevel peeling and defectivity solution for substrate processing

Also Published As

Publication number Publication date
WO2009070216A1 (en) 2009-06-04
CN101868849B (zh) 2012-03-07
JP2011504299A (ja) 2011-02-03
JP5184644B2 (ja) 2013-04-17
CN101868849A (zh) 2010-10-20
KR20100108345A (ko) 2010-10-06
SG186015A1 (en) 2012-12-28
TW200943404A (en) 2009-10-16
TWI398914B (zh) 2013-06-11

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