TWI398914B - 傾斜電漿處理以強化潮濕緣部之清理 - Google Patents

傾斜電漿處理以強化潮濕緣部之清理 Download PDF

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Publication number
TWI398914B
TWI398914B TW097145168A TW97145168A TWI398914B TW I398914 B TWI398914 B TW I398914B TW 097145168 A TW097145168 A TW 097145168A TW 97145168 A TW97145168 A TW 97145168A TW I398914 B TWI398914 B TW I398914B
Authority
TW
Taiwan
Prior art keywords
substrate
copper
plasma
edge portion
inclined edge
Prior art date
Application number
TW097145168A
Other languages
English (en)
Chinese (zh)
Other versions
TW200943404A (en
Inventor
安祖Ｄ 貝利三世
金允聖
Original Assignee
蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 蘭姆研究公司 filed Critical 蘭姆研究公司
Publication of TW200943404A publication Critical patent/TW200943404A/zh
Application granted granted Critical
Publication of TWI398914B publication Critical patent/TWI398914B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
TW097145168A 2007-11-21 2008-11-21 傾斜電漿處理以強化潮濕緣部之清理 TWI398914B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US98950507P 2007-11-21 2007-11-21

Publications (2)

Publication Number Publication Date
TW200943404A TW200943404A (en) 2009-10-16
TWI398914B true TWI398914B (zh) 2013-06-11

Family

ID=40678889

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097145168A TWI398914B (zh) 2007-11-21 2008-11-21 傾斜電漿處理以強化潮濕緣部之清理

Country Status (6)

Country Link
JP (1) JP5184644B2 (https=)
KR (1) KR101532456B1 (https=)
CN (1) CN101868849B (https=)
SG (1) SG186015A1 (https=)
TW (1) TWI398914B (https=)
WO (1) WO2009070216A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101764087B (zh) * 2010-01-21 2013-04-10 复旦大学 一种铜与低介电常数材料集成的方法
KR101458799B1 (ko) * 2013-10-11 2014-11-07 조인셋 주식회사 연성 금속 적층필름 및 그 제조방법
US9748140B1 (en) * 2016-05-13 2017-08-29 Infineon Technologies Ag Method of manufacturing semiconductor devices
CN113950732A (zh) * 2019-05-15 2022-01-18 应用材料公司 用于基板处理的斜面剥离及缺陷解决方案

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6589882B2 (en) * 2001-10-24 2003-07-08 Micron Technology, Inc. Copper post-etch cleaning process
US6967174B1 (en) * 1999-10-01 2005-11-22 Novellus Systems, Inc. Wafer chuck for use in edge bevel removal of copper from silicon wafers
US20060128152A1 (en) * 2003-03-14 2006-06-15 Lam Research Corporation Plasma oxidation and removal of oxidized material
US20070068900A1 (en) * 2005-09-27 2007-03-29 Lam Research Corporation Apparatus and methods to remove films on bevel edge and backside of wafer
US7256148B2 (en) * 2005-05-12 2007-08-14 International Business Machines Corporation Method for treating a wafer edge

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6333275B1 (en) * 1999-10-01 2001-12-25 Novellus Systems, Inc. Etchant mixing system for edge bevel removal of copper from silicon wafers
JP3953265B2 (ja) * 1999-10-06 2007-08-08 株式会社荏原製作所 基板洗浄方法及びその装置
JP4122004B2 (ja) * 2003-05-12 2008-07-23 株式会社ソスル プラズマエッチングチャンバーと、これを用いたプラズマエッチングシステ厶
US7323080B2 (en) * 2004-05-04 2008-01-29 Semes Co., Ltd. Apparatus for treating substrate
US20060172538A1 (en) * 2004-12-03 2006-08-03 Herman Itzkowitz Wet etching the edge and bevel of a silicon wafer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6967174B1 (en) * 1999-10-01 2005-11-22 Novellus Systems, Inc. Wafer chuck for use in edge bevel removal of copper from silicon wafers
US6589882B2 (en) * 2001-10-24 2003-07-08 Micron Technology, Inc. Copper post-etch cleaning process
US20060128152A1 (en) * 2003-03-14 2006-06-15 Lam Research Corporation Plasma oxidation and removal of oxidized material
US7256148B2 (en) * 2005-05-12 2007-08-14 International Business Machines Corporation Method for treating a wafer edge
US20070068900A1 (en) * 2005-09-27 2007-03-29 Lam Research Corporation Apparatus and methods to remove films on bevel edge and backside of wafer

Also Published As

Publication number Publication date
KR101532456B1 (ko) 2015-06-29
WO2009070216A1 (en) 2009-06-04
CN101868849B (zh) 2012-03-07
JP2011504299A (ja) 2011-02-03
JP5184644B2 (ja) 2013-04-17
CN101868849A (zh) 2010-10-20
KR20100108345A (ko) 2010-10-06
SG186015A1 (en) 2012-12-28
TW200943404A (en) 2009-10-16

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