CN101868849B - 为增强湿法边缘清洁而进行斜面等离子体加工 - Google Patents

为增强湿法边缘清洁而进行斜面等离子体加工 Download PDF

Info

Publication number
CN101868849B
CN101868849B CN2008801176494A CN200880117649A CN101868849B CN 101868849 B CN101868849 B CN 101868849B CN 2008801176494 A CN2008801176494 A CN 2008801176494A CN 200880117649 A CN200880117649 A CN 200880117649A CN 101868849 B CN101868849 B CN 101868849B
Authority
CN
China
Prior art keywords
copper
substrate
edge
bevel edge
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2008801176494A
Other languages
English (en)
Chinese (zh)
Other versions
CN101868849A (zh
Inventor
安德鲁·D·贝利三世
金允尚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN101868849A publication Critical patent/CN101868849A/zh
Application granted granted Critical
Publication of CN101868849B publication Critical patent/CN101868849B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2008801176494A 2007-11-21 2008-11-13 为增强湿法边缘清洁而进行斜面等离子体加工 Active CN101868849B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US98950507P 2007-11-21 2007-11-21
US60/989,505 2007-11-21
PCT/US2008/012842 WO2009070216A1 (en) 2007-11-21 2008-11-13 Bevel plasma treatment to enhance wet edge clean

Publications (2)

Publication Number Publication Date
CN101868849A CN101868849A (zh) 2010-10-20
CN101868849B true CN101868849B (zh) 2012-03-07

Family

ID=40678889

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008801176494A Active CN101868849B (zh) 2007-11-21 2008-11-13 为增强湿法边缘清洁而进行斜面等离子体加工

Country Status (6)

Country Link
JP (1) JP5184644B2 (https=)
KR (1) KR101532456B1 (https=)
CN (1) CN101868849B (https=)
SG (1) SG186015A1 (https=)
TW (1) TWI398914B (https=)
WO (1) WO2009070216A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101764087B (zh) * 2010-01-21 2013-04-10 复旦大学 一种铜与低介电常数材料集成的方法
KR101458799B1 (ko) * 2013-10-11 2014-11-07 조인셋 주식회사 연성 금속 적층필름 및 그 제조방법
US9748140B1 (en) * 2016-05-13 2017-08-29 Infineon Technologies Ag Method of manufacturing semiconductor devices
CN113950732A (zh) * 2019-05-15 2022-01-18 应用材料公司 用于基板处理的斜面剥离及缺陷解决方案

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6333275B1 (en) * 1999-10-01 2001-12-25 Novellus Systems, Inc. Etchant mixing system for edge bevel removal of copper from silicon wafers

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6537416B1 (en) * 1999-10-01 2003-03-25 Novellus Systems, Inc. Wafer chuck for use in edge bevel removal of copper from silicon wafers
JP3953265B2 (ja) * 1999-10-06 2007-08-08 株式会社荏原製作所 基板洗浄方法及びその装置
US6589882B2 (en) * 2001-10-24 2003-07-08 Micron Technology, Inc. Copper post-etch cleaning process
US7540935B2 (en) * 2003-03-14 2009-06-02 Lam Research Corporation Plasma oxidation and removal of oxidized material
JP4122004B2 (ja) * 2003-05-12 2008-07-23 株式会社ソスル プラズマエッチングチャンバーと、これを用いたプラズマエッチングシステ厶
US7323080B2 (en) * 2004-05-04 2008-01-29 Semes Co., Ltd. Apparatus for treating substrate
US20060172538A1 (en) * 2004-12-03 2006-08-03 Herman Itzkowitz Wet etching the edge and bevel of a silicon wafer
US7256148B2 (en) * 2005-05-12 2007-08-14 International Business Machines Corporation Method for treating a wafer edge
US7909960B2 (en) * 2005-09-27 2011-03-22 Lam Research Corporation Apparatus and methods to remove films on bevel edge and backside of wafer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6333275B1 (en) * 1999-10-01 2001-12-25 Novellus Systems, Inc. Etchant mixing system for edge bevel removal of copper from silicon wafers

Also Published As

Publication number Publication date
KR101532456B1 (ko) 2015-06-29
WO2009070216A1 (en) 2009-06-04
JP2011504299A (ja) 2011-02-03
JP5184644B2 (ja) 2013-04-17
CN101868849A (zh) 2010-10-20
KR20100108345A (ko) 2010-10-06
SG186015A1 (en) 2012-12-28
TW200943404A (en) 2009-10-16
TWI398914B (zh) 2013-06-11

Similar Documents

Publication Publication Date Title
US10049891B1 (en) Selective in situ cobalt residue removal
US10770346B2 (en) Selective cobalt removal for bottom up gapfill
KR100661194B1 (ko) 플라즈마 처리에 의한 기판으로부터의 산화물 또는 다른 환원가능한 오염물의 제거 방법
US6946401B2 (en) Plasma treatment for copper oxide reduction
US9564338B1 (en) Silicon-selective removal
US6949450B2 (en) Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber
TW511135B (en) Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber
TWI416622B (zh) Etching method and memory media
KR102752442B1 (ko) 선택적 금속 화합물 제거를 위한 시스템들 및 방법들
TW201618210A (zh) 半導體處理用大氣電漿設備
KR102713852B1 (ko) 텅스텐 함유 막 제거를 위한 시스템들 및 방법들
KR100597155B1 (ko) 반도체 장치의 제조 방법
CN101868849B (zh) 为增强湿法边缘清洁而进行斜面等离子体加工
US8414790B2 (en) Bevel plasma treatment to enhance wet edge clean
EP2863416B1 (en) Method for etching copper layer
CN117894748A (zh) 一种半导体结构及半导体工艺方法
JP3780204B2 (ja) バリアメタル膜又は密着層形成方法及び配線形成方法
CN120660179A (zh) 用于含钛膜去除的系统和方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant