JP2011244459A5 - - Google Patents

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Publication number
JP2011244459A5
JP2011244459A5 JP2011113609A JP2011113609A JP2011244459A5 JP 2011244459 A5 JP2011244459 A5 JP 2011244459A5 JP 2011113609 A JP2011113609 A JP 2011113609A JP 2011113609 A JP2011113609 A JP 2011113609A JP 2011244459 A5 JP2011244459 A5 JP 2011244459A5
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JP
Japan
Prior art keywords
noise amplifier
low noise
transistor
iii
integrated circuit
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JP2011113609A
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English (en)
Japanese (ja)
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JP2011244459A (ja
JP5325930B2 (ja
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Priority claimed from US13/110,584 external-priority patent/US8829999B2/en
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Publication of JP2011244459A publication Critical patent/JP2011244459A/ja
Publication of JP2011244459A5 publication Critical patent/JP2011244459A5/ja
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Publication of JP5325930B2 publication Critical patent/JP5325930B2/ja
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JP2011113609A 2010-05-20 2011-05-20 Ｉｉｉ族窒化物系高電子移動度トランジスタを含む低雑音増幅器 Active JP5325930B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US34675710P 2010-05-20 2010-05-20
US61/346,757 2010-05-20
US13/110,584 US8829999B2 (en) 2010-05-20 2011-05-18 Low noise amplifiers including group III nitride based high electron mobility transistors
US13/110,584 2011-05-18

Publications (3)

Publication Number Publication Date
JP2011244459A JP2011244459A (ja) 2011-12-01
JP2011244459A5 true JP2011244459A5 (enExample) 2012-07-05
JP5325930B2 JP5325930B2 (ja) 2013-10-23

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JP2011113609A Active JP5325930B2 (ja) 2010-05-20 2011-05-20 Ｉｉｉ族窒化物系高電子移動度トランジスタを含む低雑音増幅器

Country Status (3)

Country Link
US (1) US8829999B2 (enExample)
EP (1) EP2388819B1 (enExample)
JP (1) JP5325930B2 (enExample)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0710172B2 (ja) 1986-10-30 1995-02-01 株式会社東芝 高周波リンク変換器の起動方法
US20130056753A1 (en) * 2011-09-06 2013-03-07 Grigory Simin Semiconductor Device with Low-Conducting Field-controlling Element
US10002957B2 (en) * 2011-12-21 2018-06-19 Power Integrations, Inc. Shield wrap for a heterostructure field effect transistor
US9590674B2 (en) * 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9093394B1 (en) * 2013-12-16 2015-07-28 Hrl Laboratories, Llc Method and structure for encapsulation and interconnection of transistors
US9219450B1 (en) 2014-01-07 2015-12-22 Lockheed Martin Corporation High linearity low noise amplifier
JP6265415B2 (ja) * 2014-01-24 2018-01-24 住友電工デバイス・イノベーション株式会社 増幅装置
US9565642B2 (en) 2014-04-11 2017-02-07 Cree, Inc. GaN amplifier for WiFi applications
KR102282920B1 (ko) * 2015-08-20 2021-07-29 한국전자통신연구원 증폭기 집적 회로 및 그 설계 방법
DE102015117394B4 (de) * 2015-10-13 2020-06-18 Infineon Technologies Austria Ag Halbleiterbauelement
JP6222402B1 (ja) * 2016-10-24 2017-11-01 三菱電機株式会社 化合物半導体デバイス
WO2018078893A1 (ja) * 2016-10-24 2018-05-03 三菱電機株式会社 化合物半導体デバイス
US11101380B2 (en) 2017-02-02 2021-08-24 Intel Corporation Group III-nitride integrated front-end circuit
US10069464B1 (en) * 2017-02-21 2018-09-04 The Boeing Company 3D low flux, high-powered MMIC amplifiers
US10069462B1 (en) 2017-02-27 2018-09-04 Nxp Usa, Inc. Multiple-stage RF amplifier devices
US9960737B1 (en) 2017-03-06 2018-05-01 Psemi Corporation Stacked PA power control
US10778156B2 (en) * 2017-06-20 2020-09-15 Infineon Technologies Ag Interstage matching network
EP3480945A1 (en) 2017-11-06 2019-05-08 NXP USA, Inc. Multiple-stage power amplifiers implemented with multiple semiconductor technologies
US10250197B1 (en) * 2017-11-06 2019-04-02 Nxp Usa, Inc. Multiple-stage power amplifiers implemented with multiple semiconductor technologies
US10855235B2 (en) * 2017-12-27 2020-12-01 Murata Manufacturing Co., Ltd. Power amplifier circuit
US10404313B1 (en) 2018-02-21 2019-09-03 Analog Devices, Inc. Low noise amplifiers with output limiting
US10510694B2 (en) 2018-04-18 2019-12-17 Analog Devices, Inc. Radio frequency communication systems
US11257940B2 (en) * 2020-01-14 2022-02-22 Cree, Inc. Group III HEMT and capacitor that share structural features
US11522506B2 (en) * 2020-01-31 2022-12-06 Nxp B.V. Compact RFIC with stacked inductor and capacitor
WO2021181751A1 (ja) * 2020-03-12 2021-09-16 株式会社村田製作所 電力増幅回路、高周波回路、及び通信装置
US11658234B2 (en) 2020-10-27 2023-05-23 Wolfspeed, Inc. Field effect transistor with enhanced reliability
US12408403B2 (en) 2020-10-27 2025-09-02 Macom Technology Solutions Holdings, Inc. Field effect transistor with stacked unit subcell structure
US12266721B2 (en) 2020-10-27 2025-04-01 Wolfspeed, Inc. Field effect transistor with multiple stepped field plate
US11749726B2 (en) 2020-10-27 2023-09-05 Wolfspeed, Inc. Field effect transistor with source-connected field plate
US11502178B2 (en) 2020-10-27 2022-11-15 Wolfspeed, Inc. Field effect transistor with at least partially recessed field plate
US11923424B2 (en) * 2020-12-31 2024-03-05 Nxp B.V. Semiconductor device with conductive elements formed over dielectric layers and method of fabrication therefor
US11869964B2 (en) 2021-05-20 2024-01-09 Wolfspeed, Inc. Field effect transistors with modified access regions
US12402348B2 (en) 2021-05-20 2025-08-26 Wolfspeed, Inc. Field effect transistor with selective channel layer doping
JP7770424B2 (ja) 2021-05-20 2025-11-14 ウルフスピード インコーポレイテッド 修正アクセス領域を備える電界効果トランジスタ
US11621672B2 (en) 2021-08-05 2023-04-04 Wolfspeed, Inc. Compensation of trapping in field effect transistors
US12113114B2 (en) 2021-10-22 2024-10-08 Wolfspeed, Inc. Transistor with ohmic contacts
EP4226425A4 (en) * 2021-12-31 2024-01-10 Innoscience (Suzhou) Semiconductor Co., Ltd. Nitride-based bidirectional switching device and method for manufacturing the same
US12438103B2 (en) 2022-04-29 2025-10-07 Wolfspeed, Inc. Transistor including a discontinuous barrier layer
US20240282827A1 (en) * 2023-02-22 2024-08-22 Gan Systems Inc. Field plate biasing of high electron mobility transistor

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20092A (en) 1858-04-27 Bedstead-bail
US5290393A (en) 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
WO1992016966A1 (en) 1991-03-18 1992-10-01 Boston University A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films
US5393993A (en) 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5739554A (en) 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
US6316793B1 (en) 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
US6586781B2 (en) 2000-02-04 2003-07-01 Cree Lighting Company Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
JP2002111400A (ja) * 2000-10-03 2002-04-12 Nec Corp 電力増幅器
US6548333B2 (en) 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
US6849882B2 (en) 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
EP2267783B1 (en) 2001-07-24 2017-06-21 Cree, Inc. Insulating gate algan/gan hemt
JP4130323B2 (ja) 2002-03-28 2008-08-06 株式会社東芝 高周波フィルタ及び高周波集積回路
US6801088B2 (en) 2003-02-12 2004-10-05 Northrop Grumman Corporation Dual gate low noise amplifier
US7126426B2 (en) 2003-09-09 2006-10-24 Cree, Inc. Cascode amplifier structures including wide bandgap field effect transistor with field plates
EP1665358B1 (en) 2003-09-09 2020-07-01 The Regents of The University of California Fabrication of single or multiple gate field plates
US7501669B2 (en) 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
US7550783B2 (en) 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US7573078B2 (en) 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
JP2006114795A (ja) 2004-10-18 2006-04-27 Matsushita Electric Ind Co Ltd 半導体装置
WO2006050403A2 (en) 2004-10-28 2006-05-11 Nitronex Corporation Gallium nitride/silicon based monolithic microwave integrated circuit
US11791385B2 (en) 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
US7548112B2 (en) 2005-07-21 2009-06-16 Cree, Inc. Switch mode power amplifier using MIS-HEMT with field plate extension
US7477102B1 (en) * 2006-03-17 2009-01-13 Hrl Laboratories, Llc High efficiency linear microwave power amplifier
US7795672B2 (en) * 2006-12-26 2010-09-14 Sensor Electronic Technology, Inc. Profiled gate field effect transistor with enhanced high harmonic gain
US7609115B2 (en) 2007-09-07 2009-10-27 Raytheon Company Input circuitry for transistor power amplifier and method for designing such circuitry
JP2010057025A (ja) 2008-08-29 2010-03-11 Toshiba Corp 高周波低雑音増幅器

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