JP2011228688A5 - - Google Patents

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Publication number
JP2011228688A5
JP2011228688A5 JP2011077613A JP2011077613A JP2011228688A5 JP 2011228688 A5 JP2011228688 A5 JP 2011228688A5 JP 2011077613 A JP2011077613 A JP 2011077613A JP 2011077613 A JP2011077613 A JP 2011077613A JP 2011228688 A5 JP2011228688 A5 JP 2011228688A5
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Japan
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chamber
film
substrate
gas
sputtering
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JP2011077613A
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Japanese (ja)
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JP2011228688A (ja
JP5791934B2 (ja
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Publication of JP5791934B2 publication Critical patent/JP5791934B2/ja
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JP2011077613A 2010-04-02 2011-03-31 半導体装置の作製方法 Expired - Fee Related JP5791934B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011077613A JP5791934B2 (ja) 2010-04-02 2011-03-31 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010085714 2010-04-02
JP2010085714 2010-04-02
JP2011077613A JP5791934B2 (ja) 2010-04-02 2011-03-31 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2011228688A JP2011228688A (ja) 2011-11-10
JP2011228688A5 true JP2011228688A5 (enExample) 2014-05-01
JP5791934B2 JP5791934B2 (ja) 2015-10-07

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JP2011077613A Expired - Fee Related JP5791934B2 (ja) 2010-04-02 2011-03-31 半導体装置の作製方法

Country Status (2)

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US (1) US20110240462A1 (enExample)
JP (1) JP5791934B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5897910B2 (ja) * 2011-01-20 2016-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6257900B2 (ja) * 2012-02-23 2018-01-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR20230004930A (ko) 2012-04-13 2023-01-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6505769B2 (ja) * 2012-04-13 2019-04-24 株式会社半導体エネルギー研究所 半導体装置
WO2017170125A1 (ja) * 2016-03-29 2017-10-05 株式会社アルバック 透明導電膜付き基板の製造方法、透明導電膜付き基板の製造装置、透明導電膜付き基板、及び太陽電池
CN107488832B (zh) * 2016-06-12 2019-11-29 北京北方华创微电子装备有限公司 沉积设备以及物理气相沉积腔室
CN113140483A (zh) * 2021-03-03 2021-07-20 上海璞芯科技有限公司 一种晶圆的传片方法和传片平台

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064222A (en) * 1976-02-20 1977-12-20 Koppers Company, Inc. Nitrogen fixation and molecular magneto hydrodynamic generation using a coal gasification gas stream
GB2204066A (en) * 1987-04-06 1988-11-02 Philips Electronic Associated A method for manufacturing a semiconductor device having a layered structure
JPH06104178A (ja) * 1992-09-18 1994-04-15 Hitachi Ltd 真空処理方法及び真空処理装置
JPH09181046A (ja) * 1995-12-21 1997-07-11 Hitachi Ltd 半導体製造方法および装置
JPH09316642A (ja) * 1996-05-23 1997-12-09 Hitachi Cable Ltd マルチチャンバー型プロセス装置及び光部品の製造方法
US7141489B2 (en) * 2003-05-20 2006-11-28 Burgener Ii Robert H Fabrication of p-type group II-VI semiconductors
JP4560502B2 (ja) * 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
JP2007311404A (ja) * 2006-05-16 2007-11-29 Fuji Electric Holdings Co Ltd 薄膜トランジスタの製造方法
JP4845786B2 (ja) * 2007-03-26 2011-12-28 公益財団法人国際科学振興財団 真空排気装置、半導体製造装置及び真空処理方法
US7947544B2 (en) * 2007-11-27 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device, film deposition method, and film deposition apparatus
TWI642113B (zh) * 2008-08-08 2018-11-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP5537787B2 (ja) * 2008-09-01 2014-07-02 株式会社半導体エネルギー研究所 半導体装置の作製方法

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