JP2011225828A - 樹脂組成物及び発光半導体素子用リフレクター、及び発光半導体装置 - Google Patents
樹脂組成物及び発光半導体素子用リフレクター、及び発光半導体装置 Download PDFInfo
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- JP2011225828A JP2011225828A JP2011060329A JP2011060329A JP2011225828A JP 2011225828 A JP2011225828 A JP 2011225828A JP 2011060329 A JP2011060329 A JP 2011060329A JP 2011060329 A JP2011060329 A JP 2011060329A JP 2011225828 A JP2011225828 A JP 2011225828A
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- Prior art keywords
- emitting semiconductor
- reflector
- light emitting
- resin
- semiconductor element
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 78
- 239000011342 resin composition Substances 0.000 title claims abstract description 40
- 229920005989 resin Polymers 0.000 claims abstract description 40
- 239000011347 resin Substances 0.000 claims abstract description 40
- 239000011256 inorganic filler Substances 0.000 claims abstract description 27
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 27
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 19
- 229920002050 silicone resin Polymers 0.000 claims description 34
- 239000003822 epoxy resin Substances 0.000 claims description 26
- 229920000647 polyepoxide Polymers 0.000 claims description 26
- 239000002245 particle Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 11
- 238000007789 sealing Methods 0.000 claims description 10
- 239000004954 Polyphthalamide Substances 0.000 claims description 9
- 229920006375 polyphtalamide Polymers 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 4
- 229910052693 Europium Inorganic materials 0.000 claims description 4
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 4
- 229910052779 Neodymium Inorganic materials 0.000 claims description 4
- 229910052772 Samarium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims description 4
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 4
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 4
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 4
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 238000000465 moulding Methods 0.000 abstract description 14
- 238000004383 yellowing Methods 0.000 abstract description 2
- 230000006866 deterioration Effects 0.000 abstract 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 229920001187 thermosetting polymer Polymers 0.000 description 12
- 239000000203 mixture Substances 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 9
- 239000003054 catalyst Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000004408 titanium dioxide Substances 0.000 description 8
- 150000008065 acid anhydrides Chemical class 0.000 description 7
- 238000013329 compounding Methods 0.000 description 7
- 229920001296 polysiloxane Polymers 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- 238000001579 optical reflectometry Methods 0.000 description 6
- 239000012463 white pigment Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- -1 amine compounds Chemical class 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 description 4
- 125000003342 alkenyl group Chemical group 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000009833 condensation Methods 0.000 description 4
- 230000005494 condensation Effects 0.000 description 4
- 239000007822 coupling agent Substances 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 4
- 125000000962 organic group Chemical group 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 4
- 239000000049 pigment Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229920005992 thermoplastic resin Polymers 0.000 description 4
- HVLLSGMXQDNUAL-UHFFFAOYSA-N triphenyl phosphite Chemical compound C=1C=CC=CC=1OP(OC=1C=CC=CC=1)OC1=CC=CC=C1 HVLLSGMXQDNUAL-UHFFFAOYSA-N 0.000 description 4
- JDLYKQWJXAQNNS-UHFFFAOYSA-L zinc;dibenzoate Chemical compound [Zn+2].[O-]C(=O)C1=CC=CC=C1.[O-]C(=O)C1=CC=CC=C1 JDLYKQWJXAQNNS-UHFFFAOYSA-L 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 3
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 239000005350 fused silica glass Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 238000004382 potting Methods 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 150000003918 triazines Chemical class 0.000 description 3
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 3
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 2
- WADSJYLPJPTMLN-UHFFFAOYSA-N 3-(cycloundecen-1-yl)-1,2-diazacycloundec-2-ene Chemical compound C1CCCCCCCCC=C1C1=NNCCCCCCCC1 WADSJYLPJPTMLN-UHFFFAOYSA-N 0.000 description 2
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- ILRRQNADMUWWFW-UHFFFAOYSA-K aluminium phosphate Chemical compound O1[Al]2OP1(=O)O2 ILRRQNADMUWWFW-UHFFFAOYSA-K 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- 125000003710 aryl alkyl group Chemical group 0.000 description 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 239000013522 chelant Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 2
- 229940075613 gadolinium oxide Drugs 0.000 description 2
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 239000005055 methyl trichlorosilane Substances 0.000 description 2
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000006082 mold release agent Substances 0.000 description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000011417 postcuring Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- LYSLZRDZOBAUFL-UHFFFAOYSA-L zinc;4-tert-butylbenzoate Chemical compound [Zn+2].CC(C)(C)C1=CC=C(C([O-])=O)C=C1.CC(C)(C)C1=CC=C(C([O-])=O)C=C1 LYSLZRDZOBAUFL-UHFFFAOYSA-L 0.000 description 2
- CHJMFFKHPHCQIJ-UHFFFAOYSA-L zinc;octanoate Chemical compound [Zn+2].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O CHJMFFKHPHCQIJ-UHFFFAOYSA-L 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- RYSXWUYLAWPLES-MTOQALJVSA-N (Z)-4-hydroxypent-3-en-2-one titanium Chemical compound [Ti].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O RYSXWUYLAWPLES-MTOQALJVSA-N 0.000 description 1
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical compound CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- ZDZYGYFHTPFREM-UHFFFAOYSA-N 3-[3-aminopropyl(dimethoxy)silyl]oxypropan-1-amine Chemical compound NCCC[Si](OC)(OC)OCCCN ZDZYGYFHTPFREM-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 235000010893 Bischofia javanica Nutrition 0.000 description 1
- 240000005220 Bischofia javanica Species 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RBNPOMFGQQGHHO-UWTATZPHSA-N D-glyceric acid Chemical class OC[C@@H](O)C(O)=O RBNPOMFGQQGHHO-UWTATZPHSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- CWXQHPWXJHEEGO-UHFFFAOYSA-L [SiH4].C(CCCCCCCCCCCCCCCCC)(=O)[O-].[Ca+2].C(CCCCCCCCCCCCCCCCC)(=O)[O-] Chemical compound [SiH4].C(CCCCCCCCCCCCCCCCC)(=O)[O-].[Ca+2].C(CCCCCCCCCCCCCCCCC)(=O)[O-] CWXQHPWXJHEEGO-UHFFFAOYSA-L 0.000 description 1
- GSCOPSVHEGTJRH-UHFFFAOYSA-J [Ti+4].CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O Chemical compound [Ti+4].CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O GSCOPSVHEGTJRH-UHFFFAOYSA-J 0.000 description 1
- UKLDJPRMSDWDSL-UHFFFAOYSA-L [dibutyl(dodecanoyloxy)stannyl] dodecanoate Chemical compound CCCCCCCCCCCC(=O)O[Sn](CCCC)(CCCC)OC(=O)CCCCCCCCCCC UKLDJPRMSDWDSL-UHFFFAOYSA-L 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
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- 125000001931 aliphatic group Chemical group 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- KEBBHXFLBGHGMA-UHFFFAOYSA-K aluminum;4-ethyl-3-oxohexanoate Chemical compound [Al+3].CCC(CC)C(=O)CC([O-])=O.CCC(CC)C(=O)CC([O-])=O.CCC(CC)C(=O)CC([O-])=O KEBBHXFLBGHGMA-UHFFFAOYSA-K 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 150000007514 bases Chemical class 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 description 1
- HSVPRYWNEODRGU-UHFFFAOYSA-J butanoate;zirconium(4+) Chemical compound [Zr+4].CCCC([O-])=O.CCCC([O-])=O.CCCC([O-])=O.CCCC([O-])=O HSVPRYWNEODRGU-UHFFFAOYSA-J 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- CJZGTCYPCWQAJB-UHFFFAOYSA-L calcium stearate Chemical compound [Ca+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O CJZGTCYPCWQAJB-UHFFFAOYSA-L 0.000 description 1
- 235000013539 calcium stearate Nutrition 0.000 description 1
- 239000008116 calcium stearate Substances 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
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Images
Classifications
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Abstract
【効果】本発明の樹脂組成物を用いることにより、光反射率が高く、輝度の低下も少ない発光半導体素子用リフレクター及び発光半導体装置を提供できる。
【選択図】なし
Description
通常発光ダイオード等に使用されるリフレクター(反射材)は、PPA(ポリフタルアミド)等の熱可塑性樹脂に酸化チタン等の白色顔料が配合されたものである。現在、ほぼ全ての発光ダイオードはこの材料で成形されたリフレクターを使用している。
従って、本発明は、下記の樹脂組成物、発光半導体素子用リフレクター、及び発光半導体装置を提供する。
請求項1:
有機樹脂100質量部と無機質充填剤50〜1000質量部とを含有してなり、上記無機質充填剤の10〜100質量%が希土類元素酸化物であることを特徴とする樹脂組成物。
請求項2:
有機樹脂が、ポリフタルアミド、エポキシ樹脂、又はシリコーン樹脂である請求項1記載の樹脂組成物。
請求項3:
有機樹脂の5〜100質量%がシリコーン樹脂である請求項1記載の樹脂組成物。
請求項4:
希土類元素が、イットリウム、ネオジム、インジウム、ランタン、セリウム、サマリウム、ユウロピウム、ガドリニウム及びジスプロシウムから選ばれるものである請求項1乃至3のいずれか1項記載の樹脂組成物。
請求項5:
希土類元素酸化物が、平均粒径0.5〜60μmの粉末である請求項1乃至4のいずれか1項記載の樹脂組成物。
請求項6:
希土類元素酸化物以外の無機質充填剤として、ケイ素、マグネシウム、チタン、亜鉛及びアルミニウムから選ばれる元素の酸化物を含む請求項1乃至5のいずれか1項記載の樹脂組成物。
請求項7:
発光半導体素子のリフレクター形成用である請求項1乃至6のいずれか1項記載の樹脂組成物。
請求項8:
請求項1乃至6のいずれか1項記載の樹脂組成物の硬化物からなる発光半導体素子用リフレクター。
請求項9:
リフレクターが、発光半導体素子を実装するダイパッドと、発光半導体素子電極と外部電極とを接続するリードとの間を充満する状態に形成された平面状である請求項8記載のリフレクター。
請求項10:
リフレクターが、発光半導体素子電極と外部電極とを接続するリード上、又は該リード及び発光半導体素子電極を実装するダイパッド上に設けられて、内部に発光半導体素子を収容可能なリング壁体状に形成された凹形状である請求項8記載のリフレクター。
請求項11:
上記リング壁体と連続して上記リード間又はリードとダイパッドとの間を充満した状態に形成された請求項10記載のリフレクター。
請求項12:
発光半導体素子と、発光半導体素子電極と外部電極とを接続するリードと、請求項8乃至11のいずれか1項に記載の発光半導体素子用リフレクターとを備え、上記発光半導体素子を透明樹脂又は蛍光体含有透明樹脂で封止してなる発光半導体装置。
請求項13:
発光半導体素子の発光波長が500nm以下である請求項12記載の発光半導体装置。
本発明に使用する有機樹脂としては、熱可塑性樹脂、熱硬化性樹脂のいずれも使用することができる。これらの樹脂の中でも熱可塑性樹脂としては、従来からよく使用されているポリフタルアミド(PPA)が代表的なものである。
中でも、エポキシ樹脂としてトリグリシジルイソシアヌレート等のトリアジン誘導体エポキシ樹脂を用い、硬化剤として酸無水物を用いると共に、リン系硬化促進剤等の硬化促進剤を配合した熱硬化性樹脂組成物が、耐熱性や耐光性が優れていることから特に望ましいものである。
縮合型の熱硬化性シリコーン樹脂としては、
R1 aSi(OR2)b(OH)cO(4-a-b-c)/2 (1)
(式中、R1は同一又は異種の炭素数1〜20の有機基、R2は同一又は異種の炭素数1〜4の有機基を示し、0.8≦a≦1.5、0≦b≦0.3、0.001≦c≦0.5、0.801≦a+b+c<2を満たす数である。)
で示されるようなシリコーン樹脂が挙げられ、これに縮合触媒を配合したシリコーン樹脂組成物が好ましい。
これらの中では、イットリウム、ネオジム、インジウム、ランタン、セリウム、サマリウム、ユウロピウム、ガドリニウム、ジスプロシウムの酸化物が好ましい。
これらの中では、ケイ素、マグネシウム、チタン、亜鉛及びアルミニウムから選ばれる元素の酸化物が好ましい。特に、溶融シリカ、溶融球状シリカが成形性、流動性等の点で好適に用いられる。
無機質充填剤配合量が少なすぎると、リフレクターの光反射率が低下し、発光半導体装置が十分な輝度を発揮できない場合がある。一方、無機質充填剤配合量が多すぎると、樹脂組成物の溶融粘度が増大により流動性が悪化し、リフレクターを成形する際に未充填等の不具合が発生する場合がある。
ここで、リフレクターとしては、発光半導体素子の発光をリフレクトし得るものであればいずれのものでもよく、発光半導体装置の態様に応じてその形状等を選定し得る。例えば、発光半導体素子を実装するダイパッドと、発光半導体素子電極と外部電極とを接続するリードとの間の空隙部を充満する状態に形成された平面状であるリフレクター、あるいは発光半導体素子電極と外部電極とを接続するリード上、又は該リード及び発光半導体素子電極を実装するダイパッド上に設けられて、内部に発光半導体素子を収容可能なリング壁体状に形成された凹形状であるリフレクターが挙げられ、後者の場合、上記リング壁体と連続して上記リード間又はリードとダイパッドとの間を充満した状態に形成されていてもよい。
従って、本発明は、発光半導体素子と、発光半導体素子電極と外部電極とを接続するリードと、本発明の樹脂組成物の硬化物からなる発光半導体素子用リフレクターとを備え、上記発光半導体素子を透明樹脂又は蛍光体含有透明樹脂で封止してなる発光半導体装置をも提供する。
その後、ダイシング、レーザー加工、ウォータージェット加工等でマトリックス状に配列した成形基板を切断し、リフレクターを個片、単体化する。
実施例及び比較例で使用した原料を以下に示す。
[合成例1]
メチルトリクロロシラン100質量部、トルエン200質量部を1Lのフラスコに入れ、氷冷下で水8質量部、メチルアルコ−ル60質量部の混合液を液中滴下した。内温は−5〜0℃で5〜20時間かけて滴下し、その後、加熱して還流温度で20分間撹拌した。それから室温まで冷却し、水12質量部を30℃以下、30分間で滴下し、20分間撹拌した。更に水25質量部を滴下後、40〜45℃で60分間撹拌した。その後、水200質量部を入れて有機層を分離した。この有機層を中性になるまで洗浄し、その後、共沸脱水、濾過、減圧ストリップをすることにより、下記式(2)で示される無色透明の固体(融点76℃)36.0質量部の白色熱硬化性シリコーン樹脂(A−1)を得た。
(CH3)1.0Si(OCH3)0.06(OH)0.11O1.42 (2)
メチルトリクロロシラン50質量部、フェニルトリクロルシラン70.6質量部、トルエン200質量部を1Lのフラスコに入れ、氷冷下で水8質量部、メチルアルコ−ル60質量部の混合液を液中滴下した。内温は−5〜0℃で5〜20時間かけて滴下し、その後、加熱して還流温度で20分間撹拌した。それから室温まで冷却し、水12質量部を30℃以下、30分間で滴下し、20分間撹拌した。更に水25質量部を滴下後、40〜45℃で60分間撹拌した。その後、水200質量部を入れて有機層を分離した。この有機層を中性になるまで洗浄し、その後、共沸脱水、濾過、減圧ストリップをすることにより、下記式(3)で示される無色透明の固体(融点82℃)45.0質量部の白色熱硬化性シリコーン樹脂(A−2)を得た。
(CH3)0.5(C6H5)0.5Si(OCH3)0.05(OH)0.13O1.41 (3)
トリアジン誘導体エポキシ樹脂
トリス(2,3−エポキシプロピル)イソシアヌレート(TEPIC−S:日産化学工業(株)製商品名、エポキシ当量100)
酸無水物
メチルヘキサヒドロ無水フタル酸(リカシッドMH:新日本理化(株)製商品名)
Bステージ化エポキシ樹脂
トリス(2,3−エポキシプロピル)イソシアヌレート(TEPIC−S:日産化学工業(株)製商品名)45質量部、メチルヘキサヒドロ無水フタル酸(リカシッドMH:新日本理化(株)製商品名)55質量部、亜リン酸トリフェニル3質量部を反応釜に入れ、80℃で10時間反応させた。反応後、プレポリマーを取り出し、冷却することでBステージ化エポキシ樹脂(A−3)を固形化した。
リン系酸化防止剤:亜リン酸トリフェニル(和光純薬(株)製)
エポキシ樹脂用硬化触媒
リン系硬化触媒:メチル−トリブチルホスホニウム−ジメチルホスフェイト
(PX−4MP:日本化学(株)製商品名)
シリコーン樹脂用硬化触媒:安息香酸亜鉛
溶融球状シリカ((株)龍森製商品名、平均粒径15μm)
球状アルミナ((株)アドマテックス製商品名、平均粒径20μm)
二酸化チタン:ルチル型(R−45M:堺化学工業(株)製商品名、平均粒径0.28μm)
酸化イットリウム(A)(信越化学工業(株)製、平均粒径10μm)
酸化イットリウム(B)(信越化学工業(株)製、平均粒径5μm)
酸化ランタン(信越化学工業(株)製、平均粒径13μm)
酸化セリウム(信越化学工業(株)製、平均粒径15μm)
酸化ガドリニウム(信越化学工業(株)製、平均粒径12μm)
離型剤:ステアリン酸カルシウム
シランカップリング剤:3−メルカプトプロピルトリメトキシシラン(KBM−803:信越化学工業(株)製)
表1に示す割合で各種成分を配合し、均一に混合した後、熱二本ロールで混練することで白色のエポキシ樹脂組成物を得た。
得られたそれぞれの組成物を用い、下記に記された測定方法により各種物性を測定した結果を記載する。
《スパイラルフロー値》
EMMI規格に準じた金型を使用して、175℃、6.9N/mm2、成形時間2分の条件で測定した。
175℃の熱板上にてゲル化するまでの時間を測定した。
高化式フローテスターを用い、10kgfの加圧下、直径1mmのノズルを用い、温度175℃で粘度を測定した。
175℃、6.9N/mm2、成形時間2分の条件で直径50×3mmの円盤を成形した円盤を用い、エス・デイ・ジー株式会社製 X−rite8200を使用して、波長360nmから740nm範囲で測定した。
175℃、6.9N/mm2、成形時間2分の条件で直径50×3mmの円盤を成形した円盤を120℃の温度雰囲気下で24時間、405nmの紫外線を照射した後、光反射率を測定した。
150℃の雰囲気下で、実施例8で作製した発光装置に電流100mAを流し、試験の開始時と100時間後に大塚電子製(LP−3400)により発光強度を測定し、輝度の低下を調べた。
実施例1〜8及び比較例1〜3で製造した熱硬化性樹脂組成物により、全面銀メッキした銅リードフレームを用い、図4のマトリックスタイプの凹型リフレクター、及び図3の個片型リフレクターを下記の成形条件で成形した。
成形条件は下記の通り。
成形温度:170℃、成形圧力:6.9N/mm2、成形時間:3分
更にポストキュアを170℃で2時間行った。
成形したパッケージはリードと樹脂の密着性も良好であった。
2 リードフレーム
3 発光半導体素子
4 ダイボンド材
5 金線
6 透明封止樹脂
Claims (13)
- 有機樹脂100質量部と無機質充填剤50〜1000質量部とを含有してなり、上記無機質充填剤の10〜100質量%が希土類元素酸化物であることを特徴とする樹脂組成物。
- 有機樹脂が、ポリフタルアミド、エポキシ樹脂、又はシリコーン樹脂である請求項1記載の樹脂組成物。
- 有機樹脂の5〜100質量%がシリコーン樹脂である請求項1記載の樹脂組成物。
- 希土類元素が、イットリウム、ネオジム、インジウム、ランタン、セリウム、サマリウム、ユウロピウム、ガドリニウム及びジスプロシウムから選ばれるものである請求項1乃至3のいずれか1項記載の樹脂組成物。
- 希土類元素酸化物が、平均粒径0.5〜60μmの粉末である請求項1乃至4のいずれか1項記載の樹脂組成物。
- 希土類元素酸化物以外の無機質充填剤として、ケイ素、マグネシウム、チタン、亜鉛及びアルミニウムから選ばれる元素の酸化物を含む請求項1乃至5のいずれか1項記載の樹脂組成物。
- 発光半導体素子のリフレクター形成用である請求項1乃至6のいずれか1項記載の樹脂組成物。
- 請求項1乃至6のいずれか1項記載の樹脂組成物の硬化物からなる発光半導体素子用リフレクター。
- リフレクターが、発光半導体素子を実装するダイパッドと、発光半導体素子電極と外部電極とを接続するリードとの間を充満する状態に形成された平面状である請求項8記載のリフレクター。
- リフレクターが、発光半導体素子電極と外部電極とを接続するリード上、又は該リード及び発光半導体素子電極を実装するダイパッド上に設けられて、内部に発光半導体素子を収容可能なリング壁体状に形成された凹形状である請求項8記載のリフレクター。
- 上記リング壁体と連続して上記リード間又はリードとダイパッドとの間を充満した状態に形成された請求項10記載のリフレクター。
- 発光半導体素子と、発光半導体素子電極と外部電極とを接続するリードと、請求項8乃至11のいずれか1項に記載の発光半導体素子用リフレクターとを備え、上記発光半導体素子を透明樹脂又は蛍光体含有透明樹脂で封止してなる発光半導体装置。
- 発光半導体素子の発光波長が500nm以下である請求項12記載の発光半導体装置。
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JP2012149113A (ja) * | 2011-01-17 | 2012-08-09 | Shin-Etsu Chemical Co Ltd | 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物及び光半導体ケース |
JP2013115310A (ja) * | 2011-11-30 | 2013-06-10 | Nitto Denko Corp | 素子接続用基板、その製造方法および発光ダイオード装置 |
JP2013168409A (ja) * | 2012-02-14 | 2013-08-29 | Shin Etsu Chem Co Ltd | 光学半導体装置用パッケージとその製造方法、並びに光学半導体装置 |
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Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5844252B2 (ja) * | 2010-04-02 | 2016-01-13 | 株式会社カネカ | 硬化性樹脂組成物、硬化性樹脂組成物タブレット、成形体、半導体のパッケージ、半導体部品及び発光ダイオード |
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US10113111B2 (en) | 2015-02-06 | 2018-10-30 | Dow Silicones Corporation | Treated fillers and uses thereof |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006199752A (ja) * | 2005-01-18 | 2006-08-03 | Shin Etsu Chem Co Ltd | 電極保護用シリコーンゴム組成物 |
JP2008070685A (ja) * | 2006-09-15 | 2008-03-27 | Mitsui Chemicals Inc | 反射シート及びそれを用いたリフレクター |
JP2009221393A (ja) * | 2008-03-18 | 2009-10-01 | Shin Etsu Chem Co Ltd | 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物並びに光半導体ケース |
JP2009256670A (ja) * | 2008-03-28 | 2009-11-05 | Mitsubishi Chemicals Corp | 硬化性ポリシロキサン組成物、並びに、それを用いたポリシロキサン硬化物、光学部材、航空宇宙産業用部材、半導体発光装置、照明装置、及び画像表示装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002261333A (ja) * | 2001-03-05 | 2002-09-13 | Toyoda Gosei Co Ltd | 発光装置 |
ATE348125T1 (de) * | 2001-07-26 | 2007-01-15 | Dow Corning Toray Co Ltd | Bei umgebungstemparatur härtbare polysiloxanzusammensetzung |
US7737461B2 (en) * | 2004-08-03 | 2010-06-15 | Tokuyama Corporation | Package for storing light emitting element and method for producing package for storing light emitting element |
JP5060707B2 (ja) | 2004-11-10 | 2012-10-31 | 日立化成工業株式会社 | 光反射用熱硬化性樹脂組成物 |
US20060241215A1 (en) * | 2005-04-25 | 2006-10-26 | Shin-Etsu Chemical Co., Ltd. | Semiconductor encapsulating epoxy resin composition and semiconductor device |
US20070029682A1 (en) * | 2005-08-05 | 2007-02-08 | Shin-Etsu Chemical Co., Ltd. | Epoxy resin composition and semiconductor device |
JP2007297601A (ja) | 2006-04-06 | 2007-11-15 | Hitachi Chem Co Ltd | 光反射用熱硬化性樹脂組成物、これを用いた光半導体素子搭載用基板とその製造方法および光半導体装置 |
TW200809050A (en) * | 2006-08-14 | 2008-02-16 | Chih-Chun Hsu | Road marking line |
EP2074655B1 (en) * | 2006-10-12 | 2016-04-13 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting apparatus |
CN101583670B (zh) * | 2006-10-31 | 2012-04-11 | 大科能树脂有限公司 | 散热性树脂组合物、led实装用基板、反射器以及具有反射器部的led实装用基板 |
CN101538367B (zh) * | 2008-01-28 | 2013-09-04 | 信越化学工业株式会社 | 二缩水甘油基异氰尿酸基改性有机聚硅氧烷以及含有该有机聚硅氧烷的组成物 |
JP2010018786A (ja) * | 2008-06-09 | 2010-01-28 | Shin-Etsu Chemical Co Ltd | 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物及び光半導体ケース |
JP5182512B2 (ja) * | 2008-12-15 | 2013-04-17 | 日亜化学工業株式会社 | 熱硬化性エポキシ樹脂組成物及び半導体装置 |
JP5108825B2 (ja) * | 2009-04-24 | 2012-12-26 | 信越化学工業株式会社 | 光半導体装置用シリコーン樹脂組成物及び光半導体装置 |
-
2011
- 2011-03-18 JP JP2011060329A patent/JP5545246B2/ja active Active
- 2011-03-25 KR KR1020110026841A patent/KR101831974B1/ko active IP Right Grant
- 2011-03-28 EP EP11002552.5A patent/EP2371888B1/en active Active
- 2011-03-28 TW TW100110603A patent/TWI504651B/zh active
- 2011-03-29 US US13/074,317 patent/US8455899B2/en active Active
- 2011-03-30 CN CN201110180856.8A patent/CN102329501B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006199752A (ja) * | 2005-01-18 | 2006-08-03 | Shin Etsu Chem Co Ltd | 電極保護用シリコーンゴム組成物 |
JP2008070685A (ja) * | 2006-09-15 | 2008-03-27 | Mitsui Chemicals Inc | 反射シート及びそれを用いたリフレクター |
JP2009221393A (ja) * | 2008-03-18 | 2009-10-01 | Shin Etsu Chem Co Ltd | 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物並びに光半導体ケース |
JP2009256670A (ja) * | 2008-03-28 | 2009-11-05 | Mitsubishi Chemicals Corp | 硬化性ポリシロキサン組成物、並びに、それを用いたポリシロキサン硬化物、光学部材、航空宇宙産業用部材、半導体発光装置、照明装置、及び画像表示装置 |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012149110A (ja) * | 2011-01-17 | 2012-08-09 | Shin-Etsu Chemical Co Ltd | 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物及び光半導体ケース |
JP2012149113A (ja) * | 2011-01-17 | 2012-08-09 | Shin-Etsu Chemical Co Ltd | 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物及び光半導体ケース |
JP2013115310A (ja) * | 2011-11-30 | 2013-06-10 | Nitto Denko Corp | 素子接続用基板、その製造方法および発光ダイオード装置 |
JP2013168409A (ja) * | 2012-02-14 | 2013-08-29 | Shin Etsu Chem Co Ltd | 光学半導体装置用パッケージとその製造方法、並びに光学半導体装置 |
JP2015038180A (ja) * | 2013-05-28 | 2015-02-26 | 積水化学工業株式会社 | 光半導体装置用成形体の製造方法及び光半導体装置 |
JPWO2015041342A1 (ja) * | 2013-09-20 | 2017-03-02 | リンテック株式会社 | 硬化性組成物、硬化物および硬化性組成物の使用方法 |
KR20160058789A (ko) * | 2013-09-20 | 2016-05-25 | 린텍 가부시키가이샤 | 경화성 조성물, 경화물 및 경화성 조성물의 사용 방법 |
KR102272540B1 (ko) * | 2013-09-20 | 2021-07-02 | 린텍 가부시키가이샤 | 경화성 조성물, 경화물 및 경화성 조성물의 사용 방법 |
WO2018074637A1 (ko) * | 2016-10-21 | 2018-04-26 | 주식회사 지유디이에스 | 애완동물을 위한 펫브러시용 반도체 제작을 위한 혼합조성물 |
EP3831868A1 (en) | 2019-12-05 | 2021-06-09 | DuPont Toray Specialty Materials Kabushiki Kaisha | Curable white silicone formulation, a reflective material for optical semiconductor module and optical semiconductor device |
KR20210070919A (ko) | 2019-12-05 | 2021-06-15 | 듀폰 도레이 스페셜티 머티리얼즈 가부시키가이샤 | 경화성 백색 실리콘 조성물, 광 반도체 장치용 반사재, 및 광 반도체 장치 |
US11634582B2 (en) | 2019-12-05 | 2023-04-25 | Dupont Toray Specialty Materials Kabushiki Kaisha | Curable white silicone formulation, a reflective material for optical semiconductor module and optical semiconductor device |
CN113611673A (zh) * | 2021-10-11 | 2021-11-05 | 山东汉芯科技有限公司 | 集成布线转接板的新型芯片封装结构 |
CN113611673B (zh) * | 2021-10-11 | 2021-12-21 | 山东汉芯科技有限公司 | 集成布线转接板的新型芯片封装结构 |
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CN102329501B (zh) | 2015-02-18 |
KR101831974B1 (ko) | 2018-02-23 |
US20110241048A1 (en) | 2011-10-06 |
EP2371888A3 (en) | 2012-01-18 |
CN102329501A (zh) | 2012-01-25 |
KR20110109918A (ko) | 2011-10-06 |
EP2371888B1 (en) | 2016-05-11 |
TWI504651B (zh) | 2015-10-21 |
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US8455899B2 (en) | 2013-06-04 |
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