JP2011205077A - 微結晶半導体膜の作製方法、及び半導体装置の作製方法 - Google Patents
微結晶半導体膜の作製方法、及び半導体装置の作製方法 Download PDFInfo
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- JP2011205077A JP2011205077A JP2011040297A JP2011040297A JP2011205077A JP 2011205077 A JP2011205077 A JP 2011205077A JP 2011040297 A JP2011040297 A JP 2011040297A JP 2011040297 A JP2011040297 A JP 2011040297A JP 2011205077 A JP2011205077 A JP 2011205077A
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- semiconductor film
- microcrystalline semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 695
- 238000000034 method Methods 0.000 title claims abstract description 82
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 239000007789 gas Substances 0.000 claims description 100
- 238000006243 chemical reaction Methods 0.000 claims description 54
- 239000001257 hydrogen Substances 0.000 claims description 54
- 229910052739 hydrogen Inorganic materials 0.000 claims description 54
- 239000012535 impurity Substances 0.000 claims description 52
- 239000012298 atmosphere Substances 0.000 claims description 49
- 230000008021 deposition Effects 0.000 claims description 46
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 44
- 229910052710 silicon Inorganic materials 0.000 claims description 42
- 239000010703 silicon Substances 0.000 claims description 42
- 238000012545 processing Methods 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 15
- 150000002431 hydrogen Chemical class 0.000 claims description 10
- 239000002344 surface layer Substances 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 6
- 230000001747 exhibiting effect Effects 0.000 claims description 5
- 238000007667 floating Methods 0.000 claims description 2
- 230000002349 favourable effect Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 533
- 239000013078 crystal Substances 0.000 description 98
- 239000010409 thin film Substances 0.000 description 58
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 54
- 238000000151 deposition Methods 0.000 description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 32
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 30
- 229910052757 nitrogen Inorganic materials 0.000 description 27
- 239000010410 layer Substances 0.000 description 23
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 22
- 239000000463 material Substances 0.000 description 19
- 229910052732 germanium Inorganic materials 0.000 description 18
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 16
- 229910052786 argon Inorganic materials 0.000 description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- 239000001307 helium Substances 0.000 description 16
- 229910052734 helium Inorganic materials 0.000 description 16
- 229910052743 krypton Inorganic materials 0.000 description 16
- 229910052754 neon Inorganic materials 0.000 description 16
- 229910052760 oxygen Inorganic materials 0.000 description 16
- 239000001301 oxygen Substances 0.000 description 16
- 238000009832 plasma treatment Methods 0.000 description 16
- 230000005669 field effect Effects 0.000 description 14
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 14
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 14
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 14
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- -1 helium ions Chemical class 0.000 description 10
- 239000011574 phosphorus Substances 0.000 description 10
- 229910052698 phosphorus Inorganic materials 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 8
- 230000001590 oxidative effect Effects 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 238000000851 scanning transmission electron micrograph Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 239000011733 molybdenum Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000012300 argon atmosphere Substances 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 229920001940 conductive polymer Polymers 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 238000001678 elastic recoil detection analysis Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 3
- 238000000628 photoluminescence spectroscopy Methods 0.000 description 3
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000004611 spectroscopical analysis Methods 0.000 description 3
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- QDHHCQZDFGDHMP-UHFFFAOYSA-N Chloramine Chemical compound ClN QDHHCQZDFGDHMP-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 229910000914 Mn alloy Inorganic materials 0.000 description 2
- 229910000583 Nd alloy Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- MDQRDWAGHRLBPA-UHFFFAOYSA-N fluoroamine Chemical compound FN MDQRDWAGHRLBPA-UHFFFAOYSA-N 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- QEHKBHWEUPXBCW-UHFFFAOYSA-N nitrogen trichloride Chemical compound ClN(Cl)Cl QEHKBHWEUPXBCW-UHFFFAOYSA-N 0.000 description 2
- 229960001730 nitrous oxide Drugs 0.000 description 2
- 235000013842 nitrous oxide Nutrition 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- 229910018507 Al—Ni Inorganic materials 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229910002668 Pd-Cu Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- OWXLRKWPEIAGAT-UHFFFAOYSA-N [Mg].[Cu] Chemical compound [Mg].[Cu] OWXLRKWPEIAGAT-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- HPDFFVBPXCTEDN-UHFFFAOYSA-N copper manganese Chemical compound [Mn].[Cu] HPDFFVBPXCTEDN-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
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Abstract
【解決手段】基板上に第1の微結晶半導体膜を形成した後、当該第1の微結晶半導体膜の表面を平坦化する処理を行い、次に、平坦化された第1の微結晶半導体膜の表面側の非晶質半導体領域を除去する処理を行って、結晶性が高く、且つ平坦性を有する第2の微結晶半導体膜を形成する。次に、第2の微結晶半導体膜上に第3の微結晶半導体膜を形成する。
【選択図】図2
Description
本実施の形態では、結晶粒の間の隙間の占める面積が小さく、結晶性の高く、平坦性の高い微結晶半導体膜の作製方法について、図1及び図2を用いて説明する。
本実施の形態では、本発明の一形態である半導体装置に形成される薄膜トランジスタの作製方法について、図3乃至図6を参照して説明する。なお、薄膜トランジスタは、p型よりもn型の方がキャリアの移動度が高い。また、同一の基板上に形成する薄膜トランジスタを全て同じ極性に統一すると、工程数を抑えることができて好ましい。そのため、本実施の形態では、n型の薄膜トランジスタの作製方法について説明する。
本実施の形態では、実施の形態2と比較して、オフ電流の低い薄膜トランジスタの作製方法について、図3及び図7を用いて説明する。
本実施の形態では、実施の形態2及び実施の形態3と比較して、オフ電流をさらに低減できる薄膜トランジスタの作製方法について、図3、図5、及び図8を用いて説明する。ここでは、実施の形態2を用いて説明するが、適宜実施の形態3を適用することができる。
薄膜トランジスタを作製し、該薄膜トランジスタを画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、薄膜トランジスタを用いた駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
本実施の形態では、半導体装置の一形態である光電変換装置について説明する。本実施の形態に示す光電変換装置では、実施の形態1に示すような、結晶粒の間の隙間の占める面積が小さく、結晶性が高く、且つ平坦性の高い微結晶半導体膜を半導体膜に採用する。結晶粒の間の隙間の占める面積が小さく、結晶性が高く、且つ平坦性の高い微結晶半導体膜は、光電変換を奏する半導体膜や導電型を示す半導体膜として採用することができるが、特に、光電変換を奏する半導体膜に採用することが好適である。または、光電変換を奏する半導体膜や導電型を示す半導体膜と、他の膜との界面に、結晶粒の間の隙間の占める面積が小さく、結晶性が高く、且つ平坦性の高い微結晶半導体膜を形成することもできる。
本明細書に開示する半導体装置は、電子ペーパーとして適用することができる。電子ペーパーは、情報を表示するものであればあらゆる分野の電子機器に用いることが可能である。例えば、電子ペーパーを用いて、電子書籍(電子ブック)、ポスター、デジタルサイネージ、PID(Public Information Display)、電車などの乗り物の車内広告、クレジットカード等の各種カードにおける表示等に適用することができる。電子機器の一例を図11に示す。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
55 絶縁膜
57 第1の微結晶半導体膜
57a 結晶粒
57b 隙間
58 第2の微結晶半導体膜
58a 結晶粒
58b 非晶質半導体領域
58c 第2の微結晶半導体膜
58d 第2の微結晶半導体膜
59 第3の微結晶半導体膜
60 第4の微結晶半導体膜
60a 第4の微結晶半導体膜
60b 第4の微結晶半導体膜
61a プラズマ
61b プラズマ
101 基板
103 ゲート電極
105 ゲート絶縁膜
107 第1の微結晶半導体膜
108 第2の微結晶半導体膜
109 第3の微結晶半導体膜
110 第4の微結晶半導体膜
111 半導体膜
111a 微結晶半導体領域
111b 非晶質半導体領域
111c 半導体結晶粒
113 不純物半導体膜
115 マスク
115a マスク
117 半導体積層体
117a 微結晶半導体領域
117b 非晶質半導体領域
121 不純物半導体膜
123 プラズマ
125a 絶縁領域
127 導電膜
129a 配線
129b 配線
131a 不純物半導体膜
131b 不純物半導体膜
133 半導体積層体
133a 微結晶半導体領域
133b 非晶質半導体領域
137 絶縁膜
139 バックゲート電極
143 半導体積層体
143a 微結晶半導体領域
143b 非晶質半導体領域
150 開口部
161 隙間
163 隙間
165 非晶質半導体領域
200 基板
202 第1の電極
204 半導体膜
206 半導体膜
208 半導体膜
210 ユニットセル
212 封止樹脂層
214 開口部
216 開口部
2700 電子書籍
2701 筐体
2703 筐体
2705 表示部
2706 光電変換装置
2707 表示部
2708 光電変換装置
2711 軸部
2721 電源
2723 操作キー
2725 スピーカ
9301 上部筐体
9302 下部筐体
9303 表示部
9304 キーボード
9305 外部接続端子
9306 ポインティングデバイス
9307 表示部
9600 テレビジョン装置
9601 筐体
9603 表示部
9605 スタンド
9607 表示部
9609 操作キー
9610 リモコン操作機
9700 デジタルフォトフレーム
9701 筐体
9703 表示部
Claims (12)
- シリコンを含む堆積性気体及び水素を混合し、高周波電力を印加して、基板上に第1の微結晶半導体膜を形成し、
前記第1の微結晶半導体膜を平坦化する処理をし、
前記平坦化された第1の微結晶半導体膜の表層を除去する処理をし、
シリコンを含む堆積性気体及び水素を混合し、高周波電力を印加して、前記表層が除去された第1の微結晶半導体膜上に第2の微結晶半導体膜を形成することを特徴とする微結晶半導体膜の作製方法。 - シリコンを含む堆積性気体及び水素を混合し、高周波電力を印加して、基板上に第1の微結晶半導体膜を形成し、
前記第1の微結晶半導体膜を、希ガス雰囲気で高周波電力を印加して発生させたプラズマに曝し、
前記希ガス雰囲気で高周波電力を印加して発生させたプラズマに曝された前記第1の微結晶半導体膜を、水素を含む雰囲気で高周波電力を印加して発生させたプラズマに曝した後、
シリコンを含む堆積性気体及び水素を混合し、高周波電力を印加して、前記第1の微結晶半導体膜上に第2の微結晶半導体膜を形成することを特徴とする微結晶半導体膜の作製方法 - シリコンを含む堆積性気体及び水素を混合し、高周波電力を印加して、基板上に第1の微結晶半導体膜を形成し、
希ガス雰囲気で高周波電力を印加して発生させたプラズマに前記第1の微結晶半導体膜を曝して、表面側に非晶質半導体領域を有する第2の微結晶半導体膜を形成し、
水素を含む雰囲気で高周波電力を印加して発生させたプラズマに前記第2の微結晶半導体膜を曝して、前記第2の微結晶半導体膜の前記非晶質半導体領域を除去して、第3の微結晶半導体膜を形成し、
シリコンを含む堆積性気体及び水素を混合し、高周波電力を印加して、前記第3の微結晶半導体膜上に第4の微結晶半導体膜を形成することを特徴とする微結晶半導体膜の作製方法。 - 基板上に、ゲート電極を形成し、
前記基板及び前記ゲート電極上にゲート絶縁膜を形成し、
シリコンを含む堆積性気体及び水素を混合し、高周波電力を印加して、前記ゲート絶縁膜上に第1の微結晶半導体膜を形成し、
前記第1の微結晶半導体膜を平坦化する処理をし、
前記平坦化された第1の微結晶半導体膜の表層を除去する処理をし、
シリコンを含む堆積性気体及び水素を混合し、高周波電力を印加して、前記表層が除去された第1の微結晶半導体膜上に第2の微結晶半導体膜を形成し、
前記第2の微結晶半導体膜上に、微結晶半導体領域及び非晶質半導体領域を有する半導体膜を形成し、
前記半導体膜上に第1の不純物半導体膜を形成し、
前記第1の不純物半導体膜の一部をエッチングして、第2の不純物半導体膜を形成し、
前記第1の微結晶半導体膜、前記第2の微結晶半導体膜、及び前記半導体膜の一部をエッチングして、第1の半導体積層体を形成し、
前記第2の不純物半導体膜上に、ソース電極及びドレイン電極として機能する配線を形成し、
前記第2の不純物半導体膜をエッチングして、ソース領域及びドレイン領域として機能する一対の不純物半導体膜を形成することを特徴とする半導体装置の作製方法。 - 請求項4において、前記第1の半導体積層体を形成した後、前記第1の半導体積層体上に、ソース電極及びドレイン電極として機能する配線を形成する前において、
前記第1の半導体積層体の側面にプラズマを曝して、前記第1の半導体積層体の側壁に絶縁領域を形成することを特徴とする半導体装置の作製方法。 - 請求項4または請求項5において、前記第1の微結晶半導体膜を平坦化する処理は、希ガス雰囲気で高周波電力を印加して発生させたプラズマに前記第1の微結晶半導体膜を曝す処理であり、
前記平坦化された第1の微結晶半導体膜の表層を除去する処理は、水素を含む雰囲気で高周波電力を印加して発生させたプラズマに第1の微結晶半導体膜の表面を曝す処理であることを特徴とする半導体装置の作製方法。 - 請求項4乃至請求項6において、前記第1の半導体積層体の一部をエッチングして、微結晶半導体領域及び一対の非晶質半導体領域が積層される第2の半導体積層体を形成し、
前記配線、前記一対の不純物半導体膜、前記第2の半導体積層体、及び前記ゲート絶縁膜上に絶縁膜を形成し、
前記絶縁膜上に、バックゲート電極を形成することを特徴とする半導体装置の作製方法。 - 請求項7において、前記ゲート電極と前記バックゲート電極の上面形状が長手方向に平行であることを特徴とする半導体装置の作製方法。
- 請求項7において、前記ゲート電極と前記バックゲート電極が接続していることを特徴とする半導体装置の作製方法。
- 請求項7において、前記バックゲート電極は電気的にフローティングであることを特徴とする半導体装置の作製方法。
- 基板上に、第1の電極を形成し、
前記第1の電極上に、第1の導電型を示す半導体膜を形成し、
前記第1の導電型を示す半導体膜上に、光電変換を奏する半導体膜を形成し、
前記光電変換を奏する半導体膜上に、第2の導電型を示す半導体膜を形成し、
前記第2の導電型を示す半導体膜上に第2の電極を形成し、
前記第1の導電型を示す半導体膜、前記光電変換を奏する半導体膜、及び前記第2の導電型を示す半導体膜のいずれか一以上において、
シリコンを含む堆積性気体及び水素を混合し、高周波電力を印加して第1の微結晶半導体膜を形成し、
前記第1の微結晶半導体膜を平坦化する処理をし、
前記平坦化された第1の微結晶半導体膜の表層を除去する処理をし、
シリコンを含む堆積性気体及び水素を混合し、高周波電力を印加して、前記表層が除去された第1の微結晶半導体膜上に第2の微結晶半導体膜を形成することを特徴とする光電変換装置の作製方法。 - 請求項11において、前記第1の微結晶半導体膜を平坦化する処理は、希ガス雰囲気で高周波電力を印加して発生させたプラズマに前記第1の微結晶半導体膜を曝す処理であり、
前記平坦化された第1の微結晶半導体膜の表層を除去する処理は、水素を含む雰囲気で高周波電力を印加して発生させたプラズマに微結晶半導体膜の表面を曝す処理であることを特徴とする半導体装置の作製方法。
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