JP2011187966A5 - - Google Patents

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Publication number
JP2011187966A5
JP2011187966A5 JP2011056687A JP2011056687A JP2011187966A5 JP 2011187966 A5 JP2011187966 A5 JP 2011187966A5 JP 2011056687 A JP2011056687 A JP 2011056687A JP 2011056687 A JP2011056687 A JP 2011056687A JP 2011187966 A5 JP2011187966 A5 JP 2011187966A5
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JP
Japan
Prior art keywords
epitaxial region
peripheral portion
metal stack
ohmic metal
implanting ions
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Application number
JP2011056687A
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English (en)
Japanese (ja)
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JP5491439B2 (ja
JP2011187966A (ja
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Publication of JP2011187966A publication Critical patent/JP2011187966A/ja
Publication of JP2011187966A5 publication Critical patent/JP2011187966A5/ja
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Publication of JP5491439B2 publication Critical patent/JP5491439B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2011056687A 2003-05-09 2011-03-15 イオン・インプラント・アイソレーションによるｌｅｄ製作 Expired - Lifetime JP5491439B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US32018203P 2003-05-09 2003-05-09
US60/320,182 2003-05-09

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2006532792A Division JP5122817B2 (ja) 2003-05-09 2004-05-06 イオン・インプラント・アイソレーションによるｌｅｄ製作

Publications (3)

Publication Number Publication Date
JP2011187966A JP2011187966A (ja) 2011-09-22
JP2011187966A5 true JP2011187966A5 (enExample) 2012-02-16
JP5491439B2 JP5491439B2 (ja) 2014-05-14

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Family Applications (2)

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JP2006532792A Expired - Lifetime JP5122817B2 (ja) 2003-05-09 2004-05-06 イオン・インプラント・アイソレーションによるｌｅｄ製作
JP2011056687A Expired - Lifetime JP5491439B2 (ja) 2003-05-09 2011-03-15 イオン・インプラント・アイソレーションによるｌｅｄ製作

Family Applications Before (1)

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JP2006532792A Expired - Lifetime JP5122817B2 (ja) 2003-05-09 2004-05-06 イオン・インプラント・アイソレーションによるｌｅｄ製作

Country Status (6)

Country Link
US (1) US7338822B2 (enExample)
EP (1) EP1623467B1 (enExample)
JP (2) JP5122817B2 (enExample)
CN (2) CN101697366B (enExample)
TW (1) TWI347683B (enExample)
WO (1) WO2004102686A1 (enExample)

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CN106024623B (zh) * 2016-06-29 2019-03-01 江苏能华微电子科技发展有限公司 一种氮化镓肖特基二极管及其制作方法
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