JP5122817B2 - イオン・インプラント・アイソレーションによるｌｅｄ製作 - Google Patents

イオン・インプラント・アイソレーションによるｌｅｄ製作 Download PDF

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Publication number
JP5122817B2
JP5122817B2 JP2006532792A JP2006532792A JP5122817B2 JP 5122817 B2 JP5122817 B2 JP 5122817B2 JP 2006532792 A JP2006532792 A JP 2006532792A JP 2006532792 A JP2006532792 A JP 2006532792A JP 5122817 B2 JP5122817 B2 JP 5122817B2
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Japan
Prior art keywords
light emitting
emitting diode
substrate
epitaxial
type
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Expired - Lifetime
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JP2006532792A
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English (en)
Japanese (ja)
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JP2006528435A5 (enExample
JP2006528435A (ja
Inventor
ウー，イーフェン
ネグリー，ジェラルド・エイチ
スレイター，デーヴィッド・ビー，ジュニアー
ツヴェトコフ，ヴァレリ・エフ
スヴォロフ，アレクサンダー
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Wolfspeed Inc
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Cree Inc
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Publication of JP2006528435A5 publication Critical patent/JP2006528435A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities
JP2006532792A 2003-05-09 2004-05-06 イオン・インプラント・アイソレーションによるｌｅｄ製作 Expired - Lifetime JP5122817B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32018203P 2003-05-09 2003-05-09
US60/320,182 2003-05-09
PCT/US2004/014023 WO2004102686A1 (en) 2003-05-09 2004-05-06 Led fabrication via ion implant isolation

Related Child Applications (1)

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JP2011056687A Division JP5491439B2 (ja) 2003-05-09 2011-03-15 イオン・インプラント・アイソレーションによるｌｅｄ製作

Publications (3)

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JP2006528435A JP2006528435A (ja) 2006-12-14
JP2006528435A5 JP2006528435A5 (enExample) 2007-06-14
JP5122817B2 true JP5122817B2 (ja) 2013-01-16

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JP2006532792A Expired - Lifetime JP5122817B2 (ja) 2003-05-09 2004-05-06 イオン・インプラント・アイソレーションによるｌｅｄ製作
JP2011056687A Expired - Lifetime JP5491439B2 (ja) 2003-05-09 2011-03-15 イオン・インプラント・アイソレーションによるｌｅｄ製作

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Country Link
US (1) US7338822B2 (enExample)
EP (1) EP1623467B1 (enExample)
JP (2) JP5122817B2 (enExample)
CN (2) CN101697366B (enExample)
TW (1) TWI347683B (enExample)
WO (1) WO2004102686A1 (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7338822B2 (en) * 2003-05-09 2008-03-04 Cree, Inc. LED fabrication via ion implant isolation
JP4766845B2 (ja) * 2003-07-25 2011-09-07 シャープ株式会社 窒化物系化合物半導体発光素子およびその製造方法
EP1668687A4 (en) * 2003-09-19 2007-11-07 Tinggi Tech Private Ltd FABRICATION OF A CONDUCTIVE METAL LAYER ON SEMICONDUCTOR COMPONENTS
CN101335320B (zh) 2003-09-19 2012-06-06 霆激科技股份有限公司 用于制作发光器件的方法
US20050194584A1 (en) * 2003-11-12 2005-09-08 Slater David B.Jr. LED fabrication via ion implant isolation
EP1730790B1 (en) * 2004-03-15 2011-11-09 Tinggi Technologies Private Limited Fabrication of semiconductor devices
US8309377B2 (en) 2004-04-07 2012-11-13 Tinggi Technologies Private Limited Fabrication of reflective layer on semiconductor light emitting devices
US7592634B2 (en) * 2004-05-06 2009-09-22 Cree, Inc. LED fabrication via ion implant isolation
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
SG130975A1 (en) * 2005-09-29 2007-04-26 Tinggi Tech Private Ltd Fabrication of semiconductor devices for light emission
SG131803A1 (en) 2005-10-19 2007-05-28 Tinggi Tech Private Ltd Fabrication of transistors
SG133432A1 (en) 2005-12-20 2007-07-30 Tinggi Tech Private Ltd Localized annealing during semiconductor device fabrication
US7772604B2 (en) * 2006-01-05 2010-08-10 Illumitex Separate optical device for directing light from an LED
JP2008041811A (ja) * 2006-08-03 2008-02-21 Ngk Spark Plug Co Ltd 配線基板および多数個取り配線基板ならびにその製造方法
SG140473A1 (en) 2006-08-16 2008-03-28 Tinggi Tech Private Ltd Improvements in external light efficiency of light emitting diodes
US7646024B2 (en) * 2006-08-18 2010-01-12 Cree, Inc. Structure and method for reducing forward voltage across a silicon carbide-group III nitride interface
SG140512A1 (en) 2006-09-04 2008-03-28 Tinggi Tech Private Ltd Electrical current distribution in light emitting devices
US8087960B2 (en) 2006-10-02 2012-01-03 Illumitex, Inc. LED system and method
US8674593B2 (en) * 2007-05-31 2014-03-18 Nthdegree Technologies Worldwide Inc Diode for a printable composition
KR20100122485A (ko) 2008-02-08 2010-11-22 일루미텍스, 인크. 발광체층 쉐이핑을 위한 시스템 및 방법
US20090261346A1 (en) * 2008-04-16 2009-10-22 Ding-Yuan Chen Integrating CMOS and Optical Devices on a Same Chip
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
JP2010199558A (ja) * 2009-01-27 2010-09-09 Panasonic Corp 半導体装置およびその製造方法
US8096671B1 (en) 2009-04-06 2012-01-17 Nmera, Llc Light emitting diode illumination system
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8263422B2 (en) * 2010-04-26 2012-09-11 Varian Semiconductor Equipment Associates, Inc. Bond pad isolation and current confinement in an LED using ion implantation
DE102010026518B4 (de) 2010-07-08 2025-02-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip und Verfahren zur Herstellung einer Mehrzahl von Leuchtdiodenchips
KR101782081B1 (ko) * 2010-08-30 2017-09-26 엘지이노텍 주식회사 발광 소자
US20120097918A1 (en) * 2010-10-20 2012-04-26 Varian Semiconductor Equipment Associates, Inc. Implanted current confinement structure to improve current spreading
US8664027B2 (en) 2011-02-11 2014-03-04 Varian Semiconductor Associates, Inc. LED mesa sidewall isolation by ion implantation
US8927999B2 (en) * 2011-11-21 2015-01-06 Avogy, Inc. Edge termination by ion implantation in GaN
DE102012108883A1 (de) * 2012-09-20 2014-03-20 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips
TWI495154B (zh) * 2012-12-06 2015-08-01 Genesis Photonics Inc 半導體結構
US9985190B2 (en) * 2016-05-18 2018-05-29 eLux Inc. Formation and structure of post enhanced diodes for orientation control
CN106711301B (zh) * 2015-11-12 2020-10-27 美科米尚技术有限公司 发光二极管与其制作方法
CN106024623B (zh) * 2016-06-29 2019-03-01 江苏能华微电子科技发展有限公司 一种氮化镓肖特基二极管及其制作方法
TWI703726B (zh) 2016-09-19 2020-09-01 新世紀光電股份有限公司 含氮半導體元件
US10892137B2 (en) * 2018-09-12 2021-01-12 Entegris, Inc. Ion implantation processes and apparatus using gallium
DE102019129619A1 (de) * 2019-11-04 2021-05-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauteil
GB2590450B (en) * 2019-12-18 2022-01-05 Plessey Semiconductors Ltd Light emitting diode precursor
CN111653565B (zh) * 2020-03-11 2023-03-17 厦门市三安集成电路有限公司 一种高阻抗半导体电阻器结构及其制备方法
US11227801B2 (en) 2020-03-19 2022-01-18 International Business Machines Corporation Formation of contacts for semiconductor devices
EP3971981A1 (en) 2020-09-22 2022-03-23 Samsung Electronics Co., Ltd. Light-emitting diode display device and manufacturing method thereof
CN119545988A (zh) * 2021-02-03 2025-02-28 厦门三安光电有限公司 微型发光二极管和显示面板
CN114141916B (zh) * 2021-11-24 2023-08-01 福州大学 纳米尺寸led芯片阵列及其制备方法
CN114628432B (zh) * 2022-02-28 2023-03-10 诺视科技(苏州)有限公司 一种半导体装置的制作方法及半导体装置

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE791929A (fr) 1971-12-02 1973-03-16 Western Electric Co Procede de fabrication de regions isolantes dans un corps de semi-conducteur
US5114827A (en) * 1988-06-28 1992-05-19 Microelectronics Center Of N.C. Photoresists resistant to oxygen plasmas
US4968582A (en) * 1988-06-28 1990-11-06 Mcnc And University Of Nc At Charlotte Photoresists resistant to oxygen plasmas
US5119540A (en) * 1990-07-24 1992-06-09 Cree Research, Inc. Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product
JPH0394481A (ja) * 1989-09-07 1991-04-19 Ricoh Co Ltd アレイ状半導体発光装置
US5210051A (en) * 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
US5248760A (en) * 1991-01-25 1993-09-28 Unc At Charlotte Chemically cured low temperature polyimides
JPH0546052U (ja) * 1991-11-19 1993-06-18 三洋電機株式会社 発光ダイオード装置
JPH0697498A (ja) * 1992-09-17 1994-04-08 Toshiba Corp 半導体発光素子
US5393642A (en) * 1992-12-31 1995-02-28 The University Of North Carolina At Charlotte Ionic modification of organic resins and photoresists to produce photoactive etch resistant compositions
US5416342A (en) * 1993-06-23 1995-05-16 Cree Research, Inc. Blue light-emitting diode with high external quantum efficiency
US5393993A (en) * 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5449925A (en) * 1994-05-04 1995-09-12 North Carolina State University Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
US5592501A (en) * 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
US5631190A (en) * 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
US5679153A (en) * 1994-11-30 1997-10-21 Cree Research, Inc. Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures
SE9500146D0 (sv) 1995-01-18 1995-01-18 Abb Research Ltd Halvledarkomponent i kiselkarbid
US5718760A (en) * 1996-02-05 1998-02-17 Cree Research, Inc. Growth of colorless silicon carbide crystals
JP3688843B2 (ja) 1996-09-06 2005-08-31 株式会社東芝 窒化物系半導体素子の製造方法
US5866925A (en) * 1997-01-09 1999-02-02 Sandia Corporation Gallium nitride junction field-effect transistor
US6217662B1 (en) * 1997-03-24 2001-04-17 Cree, Inc. Susceptor designs for silicon carbide thin films
JPH10294491A (ja) * 1997-04-22 1998-11-04 Toshiba Corp 半導体発光素子およびその製造方法ならびに発光装置
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
US6063186A (en) * 1997-12-17 2000-05-16 Cree, Inc. Growth of very uniform silicon carbide epitaxial layers
JP3516433B2 (ja) * 1997-12-19 2004-04-05 昭和電工株式会社 化合物半導体発光素子
US5998232A (en) * 1998-01-16 1999-12-07 Implant Sciences Corporation Planar technology for producing light-emitting devices
JPH11214800A (ja) * 1998-01-28 1999-08-06 Sony Corp 半導体装置およびその製造方法
US6090300A (en) * 1998-05-26 2000-07-18 Xerox Corporation Ion-implantation assisted wet chemical etching of III-V nitrides and alloys
JP2000077713A (ja) * 1998-08-27 2000-03-14 Sanyo Electric Co Ltd 半導体発光素子
US6459100B1 (en) * 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED
US6331450B1 (en) 1998-12-22 2001-12-18 Toyoda Gosei Co., Ltd. Method of manufacturing semiconductor device using group III nitride compound
US6432788B1 (en) * 1999-07-22 2002-08-13 Implant Sciences Corporation Method for fabricating an emitter-base junction for a gallium nitride bipolar transistor
US6812053B1 (en) * 1999-10-14 2004-11-02 Cree, Inc. Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
JP3424634B2 (ja) * 2000-01-27 2003-07-07 日亜化学工業株式会社 窒化物半導体レーザ素子
JP2001237499A (ja) * 2000-02-22 2001-08-31 Sony Corp 半導体発光素子の製造方法
TW493284B (en) * 2000-09-06 2002-07-01 Highlink Technology Corp LED device and the manufacturing method thereof
US6255129B1 (en) * 2000-09-07 2001-07-03 Highlink Technology Corporation Light-emitting diode device and method of manufacturing the same
US20020096496A1 (en) * 2000-11-29 2002-07-25 Bela Molnar Patterning of GaN crystal films with ion beams and subsequent wet etching
US6800876B2 (en) * 2001-01-16 2004-10-05 Cree, Inc. Group III nitride LED with undoped cladding layer (5000.137)
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6547249B2 (en) * 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
JP3765246B2 (ja) 2001-06-06 2006-04-12 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
US6740906B2 (en) * 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
US7338822B2 (en) * 2003-05-09 2008-03-04 Cree, Inc. LED fabrication via ion implant isolation

Also Published As

Publication number Publication date
CN101697366B (zh) 2012-12-19
JP2006528435A (ja) 2006-12-14
JP5491439B2 (ja) 2014-05-14
US20060108595A9 (en) 2006-05-25
CN1802755B (zh) 2012-05-16
EP1623467B1 (en) 2016-12-07
US20050029533A1 (en) 2005-02-10
WO2004102686A1 (en) 2004-11-25
TWI347683B (en) 2011-08-21
CN1802755A (zh) 2006-07-12
JP2011187966A (ja) 2011-09-22
EP1623467A1 (en) 2006-02-08
TW200501459A (en) 2005-01-01
CN101697366A (zh) 2010-04-21
US7338822B2 (en) 2008-03-04

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