JP2006528435A5 - - Google Patents
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- Publication number
- JP2006528435A5 JP2006528435A5 JP2006532792A JP2006532792A JP2006528435A5 JP 2006528435 A5 JP2006528435 A5 JP 2006528435A5 JP 2006532792 A JP2006532792 A JP 2006532792A JP 2006532792 A JP2006532792 A JP 2006532792A JP 2006528435 A5 JP2006528435 A5 JP 2006528435A5
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial
- layer
- light emitting
- emitting diode
- epitaxial region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 23
- 150000002500 ions Chemical class 0.000 claims 12
- 239000004065 semiconductor Substances 0.000 claims 11
- 239000000758 substrate Substances 0.000 claims 11
- 229910052751 metal Inorganic materials 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 8
- 238000000151 deposition Methods 0.000 claims 5
- 238000002955 isolation Methods 0.000 claims 5
- 229920002120 photoresistant polymer Polymers 0.000 claims 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 230000002093 peripheral effect Effects 0.000 claims 4
- 229910002601 GaN Inorganic materials 0.000 claims 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 3
- 230000000873 masking effect Effects 0.000 claims 3
- 150000004767 nitrides Chemical class 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 239000007943 implant Substances 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 238000002161 passivation Methods 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- 229920000642 polymer Polymers 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 1
- 239000000395 magnesium oxide Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 239000002243 precursor Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 229910052596 spinel Inorganic materials 0.000 claims 1
- 239000011029 spinel Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US32018203P | 2003-05-09 | 2003-05-09 | |
| US60/320,182 | 2003-05-09 | ||
| PCT/US2004/014023 WO2004102686A1 (en) | 2003-05-09 | 2004-05-06 | Led fabrication via ion implant isolation |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011056687A Division JP5491439B2 (ja) | 2003-05-09 | 2011-03-15 | イオン・インプラント・アイソレーションによるｌｅｄ製作 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006528435A JP2006528435A (ja) | 2006-12-14 |
| JP2006528435A5 true JP2006528435A5 (enExample) | 2007-06-14 |
| JP5122817B2 JP5122817B2 (ja) | 2013-01-16 |
Family
ID=33449503
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006532792A Expired - Lifetime JP5122817B2 (ja) | 2003-05-09 | 2004-05-06 | イオン・インプラント・アイソレーションによるｌｅｄ製作 |
| JP2011056687A Expired - Lifetime JP5491439B2 (ja) | 2003-05-09 | 2011-03-15 | イオン・インプラント・アイソレーションによるｌｅｄ製作 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011056687A Expired - Lifetime JP5491439B2 (ja) | 2003-05-09 | 2011-03-15 | イオン・インプラント・アイソレーションによるｌｅｄ製作 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7338822B2 (enExample) |
| EP (1) | EP1623467B1 (enExample) |
| JP (2) | JP5122817B2 (enExample) |
| CN (2) | CN1802755B (enExample) |
| TW (1) | TWI347683B (enExample) |
| WO (1) | WO2004102686A1 (enExample) |
Families Citing this family (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5122817B2 (ja) * | 2003-05-09 | 2013-01-16 | クリー インコーポレイテッド | イオン・インプラント・アイソレーションによるｌｅｄ製作 |
| JP4766845B2 (ja) * | 2003-07-25 | 2011-09-07 | シャープ株式会社 | 窒化物系化合物半導体発光素子およびその製造方法 |
| CN101373807B (zh) * | 2003-09-19 | 2010-06-09 | 霆激技术有限公司 | 半导体器件上导电金属层的制作 |
| EP1668688A4 (en) | 2003-09-19 | 2011-03-02 | Tinggi Technologies Private Ltd | Fabrication of semiconductor devices |
| US20050194584A1 (en) * | 2003-11-12 | 2005-09-08 | Slater David B.Jr. | LED fabrication via ion implant isolation |
| ATE533187T1 (de) * | 2004-03-15 | 2011-11-15 | Tinggi Technologies Private Ltd | Fabrikation von halbleiterbauelementen |
| KR20070028364A (ko) * | 2004-04-07 | 2007-03-12 | 팅기 테크놀러지스 프라이빗 리미티드 | 반도체 발광 다이오드상의 반사층 제조 |
| US7592634B2 (en) * | 2004-05-06 | 2009-09-22 | Cree, Inc. | LED fabrication via ion implant isolation |
| US8174037B2 (en) | 2004-09-22 | 2012-05-08 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
| SG130975A1 (en) * | 2005-09-29 | 2007-04-26 | Tinggi Tech Private Ltd | Fabrication of semiconductor devices for light emission |
| SG131803A1 (en) | 2005-10-19 | 2007-05-28 | Tinggi Tech Private Ltd | Fabrication of transistors |
| SG133432A1 (en) | 2005-12-20 | 2007-07-30 | Tinggi Tech Private Ltd | Localized annealing during semiconductor device fabrication |
| CN101385145B (zh) | 2006-01-05 | 2011-06-08 | 伊鲁米特克斯公司 | 用于引导来自led的光的分立光学装置 |
| JP2008041811A (ja) * | 2006-08-03 | 2008-02-21 | Ngk Spark Plug Co Ltd | 配線基板および多数個取り配線基板ならびにその製造方法 |
| SG140473A1 (en) | 2006-08-16 | 2008-03-28 | Tinggi Tech Private Ltd | Improvements in external light efficiency of light emitting diodes |
| US7646024B2 (en) * | 2006-08-18 | 2010-01-12 | Cree, Inc. | Structure and method for reducing forward voltage across a silicon carbide-group III nitride interface |
| SG140512A1 (en) | 2006-09-04 | 2008-03-28 | Tinggi Tech Private Ltd | Electrical current distribution in light emitting devices |
| JP2010506402A (ja) | 2006-10-02 | 2010-02-25 | イルミテックス， インコーポレイテッド | Ｌｅｄのシステムおよび方法 |
| US8674593B2 (en) * | 2007-05-31 | 2014-03-18 | Nthdegree Technologies Worldwide Inc | Diode for a printable composition |
| CN101939849A (zh) | 2008-02-08 | 2011-01-05 | 伊鲁米特克有限公司 | 用于发射器层成形的系统和方法 |
| US20090261346A1 (en) * | 2008-04-16 | 2009-10-22 | Ding-Yuan Chen | Integrating CMOS and Optical Devices on a Same Chip |
| TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
| JP2010199558A (ja) * | 2009-01-27 | 2010-09-09 | Panasonic Corp | 半導体装置およびその製造方法 |
| US8096671B1 (en) | 2009-04-06 | 2012-01-17 | Nmera, Llc | Light emitting diode illumination system |
| US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
| US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
| US8263422B2 (en) * | 2010-04-26 | 2012-09-11 | Varian Semiconductor Equipment Associates, Inc. | Bond pad isolation and current confinement in an LED using ion implantation |
| DE102010026518B4 (de) | 2010-07-08 | 2025-02-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Leuchtdiodenchip und Verfahren zur Herstellung einer Mehrzahl von Leuchtdiodenchips |
| KR101782081B1 (ko) * | 2010-08-30 | 2017-09-26 | 엘지이노텍 주식회사 | 발광 소자 |
| US20120097918A1 (en) * | 2010-10-20 | 2012-04-26 | Varian Semiconductor Equipment Associates, Inc. | Implanted current confinement structure to improve current spreading |
| US8664027B2 (en) | 2011-02-11 | 2014-03-04 | Varian Semiconductor Associates, Inc. | LED mesa sidewall isolation by ion implantation |
| US8927999B2 (en) * | 2011-11-21 | 2015-01-06 | Avogy, Inc. | Edge termination by ion implantation in GaN |
| DE102012108883A1 (de) * | 2012-09-20 | 2014-03-20 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips |
| TWI495154B (zh) * | 2012-12-06 | 2015-08-01 | Genesis Photonics Inc | 半導體結構 |
| US9985190B2 (en) * | 2016-05-18 | 2018-05-29 | eLux Inc. | Formation and structure of post enhanced diodes for orientation control |
| CN106711301B (zh) * | 2015-11-12 | 2020-10-27 | 美科米尚技术有限公司 | 发光二极管与其制作方法 |
| CN106024623B (zh) * | 2016-06-29 | 2019-03-01 | 江苏能华微电子科技发展有限公司 | 一种氮化镓肖特基二极管及其制作方法 |
| TWI703726B (zh) | 2016-09-19 | 2020-09-01 | 新世紀光電股份有限公司 | 含氮半導體元件 |
| US10892137B2 (en) * | 2018-09-12 | 2021-01-12 | Entegris, Inc. | Ion implantation processes and apparatus using gallium |
| DE102019129619A1 (de) * | 2019-11-04 | 2021-05-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches halbleiterbauteil |
| GB2590450B (en) * | 2019-12-18 | 2022-01-05 | Plessey Semiconductors Ltd | Light emitting diode precursor |
| CN111653565B (zh) * | 2020-03-11 | 2023-03-17 | 厦门市三安集成电路有限公司 | 一种高阻抗半导体电阻器结构及其制备方法 |
| US11227801B2 (en) | 2020-03-19 | 2022-01-18 | International Business Machines Corporation | Formation of contacts for semiconductor devices |
| EP3971981A1 (en) | 2020-09-22 | 2022-03-23 | Samsung Electronics Co., Ltd. | Light-emitting diode display device and manufacturing method thereof |
| CN114864760B (zh) * | 2021-02-03 | 2024-12-13 | 厦门三安光电有限公司 | 微型发光二极管和显示面板 |
| CN114141916B (zh) * | 2021-11-24 | 2023-08-01 | 福州大学 | 纳米尺寸led芯片阵列及其制备方法 |
| CN114628432B (zh) * | 2022-02-28 | 2023-03-10 | 诺视科技(苏州)有限公司 | 一种半导体装置的制作方法及半导体装置 |
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| JP5122817B2 (ja) * | 2003-05-09 | 2013-01-16 | クリー インコーポレイテッド | イオン・インプラント・アイソレーションによるｌｅｄ製作 |
-
2004
- 2004-05-06 JP JP2006532792A patent/JP5122817B2/ja not_active Expired - Lifetime
- 2004-05-06 CN CN2004800125618A patent/CN1802755B/zh not_active Expired - Lifetime
- 2004-05-06 CN CN2009102088552A patent/CN101697366B/zh not_active Expired - Lifetime
- 2004-05-06 EP EP04751419.5A patent/EP1623467B1/en not_active Expired - Lifetime
- 2004-05-06 WO PCT/US2004/014023 patent/WO2004102686A1/en not_active Ceased
- 2004-05-06 US US10/840,463 patent/US7338822B2/en not_active Expired - Lifetime
- 2004-05-07 TW TW093112923A patent/TWI347683B/zh not_active IP Right Cessation
-
2011
- 2011-03-15 JP JP2011056687A patent/JP5491439B2/ja not_active Expired - Lifetime
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