JPS6325513B2 - - Google Patents
Info
- Publication number
- JPS6325513B2 JPS6325513B2 JP54137628A JP13762879A JPS6325513B2 JP S6325513 B2 JPS6325513 B2 JP S6325513B2 JP 54137628 A JP54137628 A JP 54137628A JP 13762879 A JP13762879 A JP 13762879A JP S6325513 B2 JPS6325513 B2 JP S6325513B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- semiconductor region
- semiconductor
- junction
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/20—Breakdown diodes, e.g. avalanche diodes
- H10D8/25—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13762879A JPS5678172A (en) | 1979-10-26 | 1979-10-26 | Manufacture of zener diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13762879A JPS5678172A (en) | 1979-10-26 | 1979-10-26 | Manufacture of zener diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5678172A JPS5678172A (en) | 1981-06-26 |
| JPS6325513B2 true JPS6325513B2 (enExample) | 1988-05-25 |
Family
ID=15203097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13762879A Granted JPS5678172A (en) | 1979-10-26 | 1979-10-26 | Manufacture of zener diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5678172A (enExample) |
-
1979
- 1979-10-26 JP JP13762879A patent/JPS5678172A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5678172A (en) | 1981-06-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4126359B2 (ja) | 炭化けい素ショットキーダイオードおよびその製造方法 | |
| US5432360A (en) | Semiconductor device including an anode layer having low density regions by selective diffusion | |
| US3397450A (en) | Method of forming a metal rectifying contact to semiconductor material by displacement plating | |
| JPH0441500B2 (enExample) | ||
| GB2082836A (en) | Corrugated semiconductor devices | |
| DK157468B (da) | Diode til monolitisk integreret kreds | |
| JP3468571B2 (ja) | 半導体装置 | |
| JP2002043561A (ja) | 逆導通サイリスタ | |
| JP3072753B2 (ja) | 半導体装置及び製造方法 | |
| US5248622A (en) | Finely controlled semiconductor device and method of manufacturing the same | |
| JPS6325513B2 (enExample) | ||
| JP2802459B2 (ja) | フォト・トライアック | |
| JPS6364060B2 (enExample) | ||
| JPS6325514B2 (enExample) | ||
| JPH11121768A (ja) | 半導体集積回路 | |
| JPS584815B2 (ja) | 半導体装置の製造方法 | |
| JP3255698B2 (ja) | 高安定ツェナーダイオード | |
| JPS61129867A (ja) | 半導体装置 | |
| JPH0344412B2 (enExample) | ||
| JPS60218878A (ja) | 半導体集積回路 | |
| JPS6128224B2 (enExample) | ||
| JPS6155259B2 (enExample) | ||
| KR900008818B1 (ko) | 쌍극성 집적회로소자 제조방법 | |
| JPH0567624A (ja) | 半導体装置 | |
| JPS59145567A (ja) | 半導体装置 |