CN109449153B - 一种功率器件防护芯片及其制造方法 - Google Patents
一种功率器件防护芯片及其制造方法 Download PDFInfo
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- CN109449153B CN109449153B CN201811287424.5A CN201811287424A CN109449153B CN 109449153 B CN109449153 B CN 109449153B CN 201811287424 A CN201811287424 A CN 201811287424A CN 109449153 B CN109449153 B CN 109449153B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 20
- 238000009792 diffusion process Methods 0.000 claims description 23
- 150000002500 ions Chemical class 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
- 238000002513 implantation Methods 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 3
- 230000004913 activation Effects 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 abstract description 17
- 230000010354 integration Effects 0.000 abstract description 9
- 238000002347 injection Methods 0.000 abstract description 8
- 239000007924 injection Substances 0.000 abstract description 8
- 230000002457 bidirectional effect Effects 0.000 abstract description 7
- 230000003071 parasitic effect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
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CN201811287424.5A CN109449153B (zh) | 2018-10-31 | 2018-10-31 | 一种功率器件防护芯片及其制造方法 |
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CN201811287424.5A CN109449153B (zh) | 2018-10-31 | 2018-10-31 | 一种功率器件防护芯片及其制造方法 |
Publications (2)
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CN109449153A CN109449153A (zh) | 2019-03-08 |
CN109449153B true CN109449153B (zh) | 2021-06-11 |
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CN201811287424.5A Active CN109449153B (zh) | 2018-10-31 | 2018-10-31 | 一种功率器件防护芯片及其制造方法 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111584480B (zh) * | 2020-04-17 | 2023-10-31 | 深圳方正微电子有限公司 | 半导体器件及其制造方法 |
CN114023737B (zh) * | 2021-11-05 | 2023-07-21 | 深圳市鑫飞宏电子有限公司 | 一种基于电源管理的静电防护芯片及其制备方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US8217462B2 (en) * | 2010-09-22 | 2012-07-10 | Amazing Microelectronic Corp. | Transient voltage suppressors |
CN104851919B (zh) * | 2015-04-10 | 2017-12-19 | 矽力杰半导体技术(杭州)有限公司 | 双向穿通半导体器件及其制造方法 |
CN105789332B (zh) * | 2016-04-25 | 2019-02-26 | 矽力杰半导体技术(杭州)有限公司 | 整流器件、整流器件的制造方法及esd保护器件 |
CN108091649A (zh) * | 2017-12-14 | 2018-05-29 | 深圳市晶特智造科技有限公司 | 瞬态电压抑制器及其制作方法 |
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- 2018-10-31 CN CN201811287424.5A patent/CN109449153B/zh active Active
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Effective date of registration: 20210527 Address after: 518000 15th floor, tefa information technology building, 2 Qiongyu Road, Science Park community, Yuehai street, Nanshan District, Shenzhen City, Guangdong Province Applicant after: Shenzhen Wuxin Intelligent Technology Co.,Ltd. Address before: Room 3409, Hongchang Plaza, 2001 Shennan East Road, Nanhu street, Luohu District, Shenzhen, Guangdong 518000 Applicant before: SHENZHEN FUYUTAI TRADE Co.,Ltd. |
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Effective date of registration: 20211115 Address after: 518000 15 / F, tefa information technology building, No. 2 Qiongyu Road, Science Park community, Yuehai street, Nanshan District, Shenzhen, Guangdong Province Patentee after: Shenzhen Wuxin Technology Holding Group Co., Ltd Address before: 518000 15 / F, tefa information technology building, No. 2 Qiongyu Road, Science Park community, Yuehai street, Nanshan District, Shenzhen, Guangdong Province Patentee before: Shenzhen Wuxin Intelligent Technology Co., Ltd |
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