JP2011176322A - ＧａＮ基板およびその製造方法、ＧａＮ層接合基板の製造方法、ならびに半導体デバイスの製造方法 - Google Patents
ＧａＮ基板およびその製造方法、ＧａＮ層接合基板の製造方法、ならびに半導体デバイスの製造方法 Download PDFInfo
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- JP2011176322A JP2011176322A JP2011054514A JP2011054514A JP2011176322A JP 2011176322 A JP2011176322 A JP 2011176322A JP 2011054514 A JP2011054514 A JP 2011054514A JP 2011054514 A JP2011054514 A JP 2011054514A JP 2011176322 A JP2011176322 A JP 2011176322A
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 152
- 239000000758 substrate Substances 0.000 title claims abstract description 112
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 239000000203 mixture Substances 0.000 claims abstract description 188
- 238000000034 method Methods 0.000 claims description 51
- 150000002500 ions Chemical class 0.000 claims description 48
- 238000002513 implantation Methods 0.000 claims description 19
- 150000004767 nitrides Chemical class 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 238000012545 processing Methods 0.000 abstract description 12
- 238000005468 ion implantation Methods 0.000 description 37
- 238000005498 polishing Methods 0.000 description 19
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 15
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 238000000926 separation method Methods 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 3
- 238000007373 indentation Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- 230000014616 translation Effects 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011054514A JP2011176322A (ja) | 2011-03-11 | 2011-03-11 | ＧａＮ基板およびその製造方法、ＧａＮ層接合基板の製造方法、ならびに半導体デバイスの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011054514A JP2011176322A (ja) | 2011-03-11 | 2011-03-11 | ＧａＮ基板およびその製造方法、ＧａＮ層接合基板の製造方法、ならびに半導体デバイスの製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| JP2009023775A Division JP2010180081A (ja) | 2009-02-04 | 2009-02-04 | ＧａＮ基板およびその製造方法、ＧａＮ層接合基板の製造方法、ならびに半導体デバイスの製造方法 |
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| Publication Number | Publication Date |
|---|---|
| JP2011176322A true JP2011176322A (ja) | 2011-09-08 |
| JP2011176322A5 JP2011176322A5 (enExample) | 2012-03-01 |
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| JP2011054514A Withdrawn JP2011176322A (ja) | 2011-03-11 | 2011-03-11 | ＧａＮ基板およびその製造方法、ＧａＮ層接合基板の製造方法、ならびに半導体デバイスの製造方法 |
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| JP (1) | JP2011176322A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018123052A (ja) * | 2013-08-08 | 2018-08-09 | 三菱ケミカル株式会社 | 自立ＧａＮ基板、ＧａＮ結晶、ＧａＮ単結晶の製造方法および半導体デバイスの製造方法 |
| US10655244B2 (en) | 2014-01-17 | 2020-05-19 | Mitsubishi Chemical Corporation | GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device |
| JP2021006501A (ja) * | 2015-01-16 | 2021-01-21 | 住友電気工業株式会社 | 半導体基板、複合半導体基板、および半導体接合基板 |
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2011
- 2011-03-11 JP JP2011054514A patent/JP2011176322A/ja not_active Withdrawn
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018123052A (ja) * | 2013-08-08 | 2018-08-09 | 三菱ケミカル株式会社 | 自立ＧａＮ基板、ＧａＮ結晶、ＧａＮ単結晶の製造方法および半導体デバイスの製造方法 |
| US10475887B2 (en) | 2013-08-08 | 2019-11-12 | Mitsubishi Chemical Corporation | Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device |
| US11031475B2 (en) | 2013-08-08 | 2021-06-08 | Mitsubishi Chemical Corporation | Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device |
| US11038024B2 (en) | 2013-08-08 | 2021-06-15 | Mitsubishi Chemical Corporation | Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device |
| US11664428B2 (en) | 2013-08-08 | 2023-05-30 | Mitsubishi Chemical Corporation | Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device |
| US12107129B2 (en) | 2013-08-08 | 2024-10-01 | Mitsubishi Chemical Corporation | Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device |
| US10655244B2 (en) | 2014-01-17 | 2020-05-19 | Mitsubishi Chemical Corporation | GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device |
| JP2021006501A (ja) * | 2015-01-16 | 2021-01-21 | 住友電気工業株式会社 | 半導体基板、複合半導体基板、および半導体接合基板 |
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