JP2011176322A5 - - Google Patents
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- JP2011176322A5 JP2011176322A5 JP2011054514A JP2011054514A JP2011176322A5 JP 2011176322 A5 JP2011176322 A5 JP 2011176322A5 JP 2011054514 A JP2011054514 A JP 2011054514A JP 2011054514 A JP2011054514 A JP 2011054514A JP 2011176322 A5 JP2011176322 A5 JP 2011176322A5
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- JP
- Japan
- Prior art keywords
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- gan substrate
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000002513 implantation Methods 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 3
- 101100116570 Caenorhabditis elegans cup-2 gene Proteins 0.000 claims description 2
- 101100116572 Drosophila melanogaster Der-1 gene Proteins 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims 7
- 239000013078 crystal Substances 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011054514A JP2011176322A (ja) | 2011-03-11 | 2011-03-11 | ＧａＮ基板およびその製造方法、ＧａＮ層接合基板の製造方法、ならびに半導体デバイスの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011054514A JP2011176322A (ja) | 2011-03-11 | 2011-03-11 | ＧａＮ基板およびその製造方法、ＧａＮ層接合基板の製造方法、ならびに半導体デバイスの製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009023775A Division JP2010180081A (ja) | 2009-02-04 | 2009-02-04 | ＧａＮ基板およびその製造方法、ＧａＮ層接合基板の製造方法、ならびに半導体デバイスの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011176322A JP2011176322A (ja) | 2011-09-08 |
| JP2011176322A5 true JP2011176322A5 (enExample) | 2012-03-01 |
Family
ID=44688843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011054514A Withdrawn JP2011176322A (ja) | 2011-03-11 | 2011-03-11 | ＧａＮ基板およびその製造方法、ＧａＮ層接合基板の製造方法、ならびに半導体デバイスの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2011176322A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102320083B1 (ko) | 2013-08-08 | 2021-11-02 | 미쯔비시 케미컬 주식회사 | 자립 ＧａＮ 기판, ＧａＮ 결정, ＧａＮ 단결정의 제조 방법 및 반도체 디바이스의 제조 방법 |
| CN105917035B (zh) | 2014-01-17 | 2019-06-18 | 三菱化学株式会社 | GaN基板、GaN基板的制造方法、GaN结晶的制造方法和半导体器件的制造方法 |
| US10304739B2 (en) * | 2015-01-16 | 2019-05-28 | Sumitomo Electric Industries, Ltd. | Method for manufacturing semiconductor substrate, semiconductor substrate, method for manufacturing combined semiconductor substrate, combined semiconductor substrate, and semiconductor-joined substrate |
-
2011
- 2011-03-11 JP JP2011054514A patent/JP2011176322A/ja not_active Withdrawn
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